• Korean Chemical Engineering Research
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• v.50 no.5
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• pp.885-889
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• 2012

In this study, amine and metal oxide additives were investigated to improve $CO_2$ adsorption capacity of activated carbons (ACs). The characteristics of surface modified ACs were studied by X-ray photoelectron spectroscopy (XPS), $N_2$ adsorption, X-ray diffraction (XRD), and BET. Amine surface treatment decreased specific surface area and pore volume of ACs, but increased alkalinity by the incorporated nitrogen functional groups. Adsorption capacities of amine functionalized ACs was larger than original ACs, because basic group which can react with $CO_2$ was grafted on the ACs surface. Presence of copper oxides on ACs also enhances the carbon dioxide adsorption. The copper oxides could increase the adsorption rate of carbon dioxides due to the acid-base interaction (or electron acceptor-donor interaction). It was found that copper oxide loading was a promising method to improve the $CO_2$ adsorption capacity of ACs.

• Toxicological Research
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• v.34 no.4
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• pp.343-354
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• 2018

Aluminum oxide nanoparticles ($Al_2O_3$ NPs) are among the most widely used nanomaterials; however, relatively little information about their risk identification and assessment is available. In the present study, we aimed to investigate the potential toxicity of $Al_2O_3$ NPs following repeated inhalation exposure in male Sprague-Dawley rats. Rats were exposed to $Al_2O_3$ NPs for 28 days (5 days/week) at doses of 0, 0.2, 1, and $5mg/m^3$ using a nose-only inhalation system. During the experimental period, we evaluated the clinical signs, body weight change, hematological and serum biochemical parameters, necropsy findings, organ weight, and histopathology findings. Additionally, we analyzed the bronchoalveolar lavage fluid (BALF), including differential leukocyte counts, and aluminum contents in the major organs and blood. Aluminum contents were the highest in lung tissues and showed a dose-dependent relationship in the exposure group. Histopathology showed alveolar macrophage accumulation in the lungs of rats in the $5mg/m^3$ group during exposure and recovery. These changes tended to increase at the end of the recovery period. In the BALF analysis, total cell and neutrophil counts and lactate dehydrogenase, tumor necrosis factor-${\alpha}$, and interleukin-6 levels significantly increased in the 1 and $5mg/m^3$ groups during exposure. Under the present experimental conditions, we suggested that the no-observed-adverse-effect level of $Al_2O_3$ NPs in male rats was $1mg/m^3$, and the target organ was the lung.

• Journal of Electrochemical Science and Technology
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• v.13 no.2
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• pp.269-278
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• 2022

Utilization of high-voltage electrolyte additive(s) at a small fraction is a cost-effective strategy for a good solid electrolyte interphase (SEI) formation and performance improvement of a lithium-rich layered oxide-based high-energy lithium-ion cell by avoiding the occurrence of metal-dissolution that is one of the failure modes. To mitigate metal-dissolution, we explored fluorinated dual-additives of fluoroethylene carbonate (FEC) and di(2,2,2-trifluoroethyl)carbonate (DFDEC) for building-up of a good SEI in a 4.7 V full-cell that consists of high-capacity silicon-graphite composite (15 wt% Si/C/CF/C-graphite) anode and Li_1.13Mn_0.463Ni_0.203Co_0.203O₂ (LMNC) cathode. The full-cell including optimum fractions of dual-additives shows increased capacity to 228 mAhg^-1 at 0.2C and improved performance from the one in the base electrolyte. Surface analysis results find that the SEI stabilization of LMNC cathode induced by dual-additives leads to a suppression of soluble Mn²⁺-O formation at cathode surface, mitigating metal-dissolution event and crack formation as well as structural degradation. The SEI and structure of Si/C/CF/C-graphite anode is also stabilized by the effects of dual-additives, contributing to performance improvement. The data give insight into a basic understanding of cathode-electrolyte and anode-electrolyte interfacial processes and cathode-anode interaction that are critical factors affecting full-cell performance.

• Journal of Sensor Science and Technology
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• v.33 no.5
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• pp.274-287
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• 2024

Chemiresistors play a crucial role in numerous research fields, including environmental monitoring, healthcare, and industrial safety, owing to their ability to detect and quantify gases with high sensitivity and specificity. This review provides a comprehensive overview of the recent advancements in photoactivated chemiresistors and emphasizes their potential for the development of highly sensitive, selective, and low-power gas sensors. This study explores a range of structural configurations of sensing materials, from zero-dimensional quantum dots to three-dimensional, porous nanostructures and examines the impact of these designs on the photoactivity, gas interactions, and overall sensor performance-including gas responses and recovery rates. Particular focus is placed on metal-oxide semiconductors and the integration of ultraviolet micro-light emitting diodes, which have gained attention as key components for next-generation sensing technologies owing to their superior photoactivity and energy efficiency. By addressing existing technical challenges, such as limited sensitivity, particularly at room temperature (~22℃), this paper outlines future research directions, highlighting the potential of photoactivated chemiresistors in developing high-performance, ultralow-power gas sensors for the Internet of Things and other advanced applications.

• Clean Technology
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• v.16 no.3
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• pp.162-171
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• 2010

The objective of this study is to develop cleaning agents for the indoor water supply pipe which is environmentally friendly and suitable for removing scale by using various organic acids, inorganic acids, and some additives. Among various organic acids, oxalic acid, citric acid, and malic acid showed good cleaning efficiency of iron oxides which were main components of the indoor water supply pipe scale. Several cleaning agents were formulated by adding chemical additives into these organic acids and evaluated for removal of iron oxides. In this study, it was found that nonionic surfactants were excellent for the removal of iron oxide scale among various additives. Two types of cleaning agents($F_1$, $F_2$) with comparatively high solvent power for iron oxides were formulated in this study. The cleaning agents $F_1$ made by organic acids and some additives were formulated to be safe and environmentally friendly, but seemed to have disadvantage due to their comparatively low cleaning efficiency of iron oxide than $F_2$. But, the cleaning agents $F_2$ prepared by adding inorganic acid a little to $F_1$ showed comparatively good cleaning efficiency of iron oxide and could be recommended for removing hard scale of iron oxides in the indoor water supply pipe. Thus, it is considered that the formulated cleaning agents should be selected based on the extent of scale in the indoor water supply pipe.

• Bulletin of the Korean Chemical Society
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• v.33 no.7
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• pp.2207-2212
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• 2012

Dimethylaluminum isopropoxide (DMAI, $(CH_3)_2AlO^iPr$) as a single precursor, which contains one aluminum and one oxygen atom, has been adopted to deposit non-stoichiometric aluminum oxide ($AlO_x$) films by low pressure metal organic chemical vapor deposition without an additional oxygen source. The atomic concentration of Al and O in the deposited $AlO_x$ film was measured to be Al:O = ~1:1.1 and any serious interfacial oxide layer between the film and Si substrate was not observed. Gaseous by-products monitored by quadruple mass spectrometry show that ${\beta}$-hydrogen elimination mechanism is mainly contributed to the $AlO_x$ CVD process of DMAI precursor. The current-voltage characteristics of the $AlO_x$ film in Au/$AlO_x$/Ir metalinsulator-metal (MIM) capacitor structure show high ON/OFF ratio larger than ${\sim}10^6$ with SET and RESET voltages of 2.7 and 0.8 V, respectively. Impedance spectra indicate that the switching and memory phenomena are based on the bulk-based origins, presumably the formation and rupture of filaments.

• Proceedings of the Korean Vacuum Society Conference
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• 2016.02a
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• pp.308-309
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• 2016

Reducing surface recombination is a critical factor for high efficiency silicon solar cells. The passivation process is for reducing dangling bonds which are carrier. Tunnel oxide layer is one of main issues to achieve a good passivation between silicon wafer and emitter layer. Many research use wet-chemical oxidation or thermally grown which the highest conversion efficiencies have been reported so far. In this study, we deposit ultra-thin tunnel oxide layer by PECVD (Plasma Enhanced Chemical Vapor Deposition) using $N_2O$ plasma. Both side deposit tunnel oxide layer in different RF-power and phosphorus doped a-Si:H layer. After deposit, samples are annealed at $850^{\circ}C$ for 1 hour in $N_2$ gas atmosphere. After annealing, samples are measured lifetime and implied Voc (iVoc) by QSSPC (Quasi-Steady-State Photo Conductance). After measure, samples are annealed at $400^{\circ}C$ for 30 minute in $Ar/H_2$ gas atmosphere and then measure again lifetime and implied VOC. The lifetime is increase after all process also implied VOC. The highest results are lifetime $762{\mu}s$, implied Voc 733 mV at RF-power 200 W. The results of C-V measurement shows that Dit is increase when RF-power increase. Using this optimized tunnel oxide layer is attributed to increase iVoc. As a consequence, the cell efficiency is increased such as tunnel mechanism based solar cell application.

• Polymer(Korea)
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• v.31 no.1
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• pp.74-79
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• 2007

Polypyrrole (PPy) was made by an emulsion polymerization using iron (III) chloride ($FeCl_3$) as an initiator and dodecyl benzene sulfuric acid (DBSA) as an emulsifier and dopant. Poly (2,6-dimethyl-1,4-phenylene oxide) (PPO) was sulfonated by chlorosulfonic acid (CSA). The cathode was composed of $PPy^+DBS^-$ complex, conductor powder, and PPO or sulfonated poly (2,6-dimethyl-1,4-phenylene oxide) (SPPO) as a binder or dopant. The charge-discharge performance of $PPy^+DBS^-/SPPO$ cathode was increased as the extent of about 50%, than $PPy^+DBS^-/PPO$. This is because SPPO played a role as a binder as well as a dopant. In addition, sulfonation brings out the increase of miscibility between PPy and SPPO, and the increase of contact area between cathode and electrolyte.

• Journal of the Institute of Electronics and Information Engineers
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• v.51 no.3
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• pp.177-184
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• 2014

In chemical vapor deposition(CVD) tungsten silicide(WSix) dual poly gate(DPG) scheme, we observed the fluorine effects on gate oxide using the electrical and physical measurements. It is found that in fluorine-rich WSix NMOS transistors, the gate thickness decreases as gate length is reduced, and it intensifies the roll-off properties of transistor. This is because the fluorine diffuses laterally from WSix to the gate sidewall oxide in addition to its vertical diffusion to the gate oxide during gate re-oxidation process. When the channel length is very small, the gate oxide thickness is further reduced due to a relative increase of the lateral diffusion than the vertical diffusion. In PMOS transistors, it is observed that boron of background dopoing in $p^+$ poly retards fluorine diffusion into the gate oxide. Thus, it is suppressed the fluorine effects on gate oxide thickness with the channel length dependency.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.02a
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• pp.562-562
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• 2012

Recently, graphene and graphene-based materials such as graphene oxide (GO) or reduced graphene oxide (R-GO) draws a great attention for electronic devices due to their structures of one atomic layer of carbon hexagon that have excellent mechanical, electrical, thermal, optical properties and very high specific surface area that can be high potential for chemical functionalization. R-GO is a promising candidate because it can be prepared with low-cost from solution process by chemical oxidation and exfoliation using strong acids and oxidants to produce graphene oxide (GO) and its subsequent reduction. R-GO has been used as semiconductor or conductor materials as well as sensing layer for bio-molecules or ions. In this work, reduced graphene oxide field-effect transistor (R-GO FET) has been fabricated with ITO extended gate structure that has sensing area on ITO extended gate part. R-GO FET device was encapsulated by tetratetracontane (TTC) layer using thermal evaporation. A thermal annealing process was carried out at $140^{\circ}C$ for 4 hours in the same thermal vacuum chamber to remove defects in R-GO film before deposition of TTC at $50^{\circ}C$ with thickness of 200 nm. As a result of this process, R-GO FET device has a very high stability and durability for months to serve as a transducer for sensing applications.