• Bulletin of the Korean Chemical Society
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• v.14 no.3
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• pp.352-356
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• 1993

• Journal of the Korea Academia-Industrial cooperation Society
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• v.7 no.3
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• pp.344-349
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• 2006

The low-temperature processing is very important for fabrication of the very large scale ($60{\sim}70nm$) semiconductor devices since the submicron transistors are sensitive to the thermal budget. Hence, in this work, we propose a noble low-temperature LPCVD (Low-Pressure Chemical Vapor Deposition) process for the $SiO_2$ film and evaluate the electrical reliability of the LTO (Low-Temperature Oxide) by making the capacitors with ONO (Oxide/Nitride/Oxide) structure. The leak current of the LTO was similar to that of the high-temperature wet oxide until the electric field was lower than 5 MV/cm. However, when the electric field was higher, the LTO showed much better characteristics.

• Restorative Dentistry and Endodontics
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• v.25 no.2
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• pp.272-288
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• 2000

Calcium hydroxide is used as a root canal medicament with its several pharmacological effects. However, it has been known that the usage of calcium hydroxide in the root canal system before canal filling with gutta-percha and zinc oxide eugenol-based cement induced change in the properties of root canal cement which might adversely affect sealing ability of the canal filling. The purpose of this study was to identify the reactivity of calcium hydroxide-eugenol compound made from chemical interaction of between calcium hydroxide and zinc oxide eugenol. Chemical properties of calcium hydroxide, eugenol, zinc oxide eugenol, calcium hydroxide-eugenol and calcium hydroxide-zinc oxide eugenol compound were analyzed using XRD. FT-IR Spectrophotometer and FT-NMR Spectrometer. The results were as follows: 1. The compound made from interaction between calcium hydroxide and zinc oxide eugenol was as follows : 2. Calcium hydroxide was shown to make chemical bond (ionic bond) with eugenol. 3. Since bonding between $Ca^{2+}$ and eugenol is simple ionic nature, under water existence, calcium hydroxide-eugenol compound may be ionized easily and its physical property be deteriorated.

• Proceedings of the PSK Conference
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• 2001.10a
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• pp.146.2-146.2
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• 2001

• Bulletin of the Korean Chemical Society
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• v.32 no.6
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• pp.2051-2057
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• 2011

Several studies have demonstrated that nanoparticles (NPs) have toxic effects on cultured cell lines, yet there are no clear data describing the overall molecular changes induced by NPs currently in use for human applications. In this study, the in vitro cytotoxicity of three oxide NPs of around 100 nm size, namely, mesoporous silica (MCM-41), iron oxide ($Fe_2O_3$-NPs), and zinc oxide (ZnO-NPs), was evaluated in the human embryonic kidney cell line HEK293. Cell viability assays demonstrated that 100 ${\mu}g/mL$ MCM-41, 100 ${\mu}g/mL$ $Fe_2O_3$, and 12.5 ${\mu}g/mL$ ZnO exhibited 20% reductions in HEK293 cell viability in 24 hrs. DNA microarray analysis was performed on cells treated with these oxide NPs and further validated by real time PCR to understand cytotoxic changes occurring at the molecular level. Microarray analysis of NP-treated cells identified a number of up- and down-regulated genes that were found to be associated with inflammation, stress, and the cell death and defense response. At both the cellular and molecular levels, the toxicity was observed in the following order: ZnO-NPs > $Fe_2O_3$-NPs > MCM-41. In conclusion, our study provides important information regarding the toxicity of these three commonly used oxide NPs, which should be useful in future biomedical applications of these nanoparticles.

• Proceedings of the Korean Vacuum Society Conference
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• 2016.02a
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• pp.379.2-379.2
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• 2016

The Ni oxide/PVP nanofibers were synthesized by sol-gel and electrospinning technique. The obtained Ni oxide/PVP (polyvinylpyrrolidone) nanofibers were calcined to remove the PVP compound at 873 and 1173 K. The Ni oxide/PVP nanofibers were analyzed by scanning electron microscopy (SEM), transmission electron microscopy (TEM), X-ray diffraction (XRD), and X-ray photoelectron spectroscopy (XPS). The SEM images showed that the mat form was prepared by calcination of Ni oxide/PVP nanofibers at 873 K. And the crystal structure of Ni oxide at 1173 K was also confirmed by SEM images. XRD results shows the crystallinity of metallic Ni and NiO. TEM images also verified the crystal phase of Ni and Ni oxide. XP spectra revealed that the oxidation state of Ni to conclude the chemical composition of Cu oxide nanofibers.

• Applied Chemistry for Engineering
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• v.20 no.6
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• pp.617-621
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• 2009

Zinc oxide (ZnO) nanorods were grown on the pre-oxidized silicon substrate with the assistance of Au and the fluorine-doped tin oxide (FTO) based on the catalysts by vapor-liquid-solid (VLS) synthesis. Two types of ZnO powder particle size, 20nm, $20{\mu}m$, were used as a source material, respectively The properties of the nanorods such as morphological characteristics, chemical composition and crystalline properties were examined by X-ray diffraction (XRD), energy-dispersive X-ray spectroscopy (EDX) and field-emission scanning electron microscope (FE-SEM). The particle size of ZnO source strongly affected the growth of ZnO nanostructures as well as the crystallographic structure. All the ZnO nanostructures are hexagonal and single crystal in nature. It is found that $1030^{\circ}C$ is a suitable optimum growth temperature and 20 nm is a optimum ZnO powder particle size. Nanorods were fabricated on the FTO deposition with large electronegativity and we found that the electric potential of nanorods rises as the ratio of current rises, there is direct relationship with the catalysts, Therefore, it was considered that Sn can be the alternative material of Au in the formation of ZnO nanostructures.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.02a
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• pp.217-217
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• 2012

Solution-processed tungsten oxide thin film with thickness of about 30 nm is prepared from ammonium tungstate. This layer is introduced into the interface between the poly(3-hexylthiophene):[6,6]-phenyl-C61-butyric acid methyl ester (P3HT:PCBM) layer and the ITO electrode to be used as an electron blocking layer. The annealed tungsten oxide thin films at $150^{\circ}C$ and $300^{\circ}C$ show amorphous phase, while the $400^{\circ}C$ -annealed tungsten oxide film shows crystalline phase. At $150^{\circ}C$ annealing temperature, the conversion efficiency is significantly improved from 0.71% to 1.42% as the condition is changed from vacuum to air atmosphere, which is related to oxidation state of tungsten in amorphous phase. For the air annealing condition, the conversion efficiency is further increased from 1.42% to 2.01% as the temperature is increased from $150^{\circ}C$ to $300^{\circ}C$, which is mainly due to the removal of the chemisorbed water. However, a slight deterioration in photovoltaic performance is observed when the temperature is increased to $400^{\circ}C$, which is ascribed to poor electron blocking ability due to the formation of crystalline phase. It is concluded that $W^{6+}$ oxidation state and amorphous nature in tungsten oxide interlayer is essential for blocking electron effectively from the active layer to the ITO electrode.

• Bulletin of the Korean Chemical Society
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• v.23 no.2
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• pp.179-183
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• 2002

Resonance-enhanced multiphoton ionization with time-of-flight product imaging of the $N(^2D)$ atoms has been used to study the $N_2O$ photodissociation at 118.2 nm and the two-photon dissociation at 268.9 nm. These imaging experiments allowed the determination of the total kinetic energy distribution of the $NO(X^2{\prod})$ and $N(^2D_{5/2})$ products. The $NO(X^2{\prod})$ fragments resulting from the photodissociation processes are produced in highly vibrationally excited states. The two-photon photodissociation process yields a broad $NO(X^2{\prod})$ vibrational energy distribution, while the 118.2 nm dissociation appears to produce a vibrational distribution sharply peaked at $NO(X^2{\prod},\;{\nu}=14)$.

• Bulletin of the Korean Chemical Society
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• v.33 no.1
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• pp.83-89
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• 2012

Due to the potential importance and usefulness, usage of highly ordered nanoporous anodized aluminum oxide can be broadened in industry, when highly ordered anodized aluminum oxide can be placed on a substrate with controlled thickness. Here we report a facile route to highly ordered nanoporous alumina with the thickness of hundreds-of-nanometer on a silicon wafer substrate. Hexagonally or tetragonally ordered nanoporous alumina could be prepared by way of thermal imprinting, dry etching, and anodization. Adoption of reusable polymer soft molds enabled the control of the thickness of the highly ordered porous alumina. It also increased reproducibility of imprinting process and reduced the expense for mold production and pattern generation. As nanoporous alumina templates are mechanically and thermally stable, we expect that the simple and costeffective fabrication through our method would be highly applicable in electronics industry.