• Korean Journal of Materials Research
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• v.27 no.3
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• pp.166-171
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• 2017

Removal of phosphate from environmental water has become more important to prevent eutrophication. In the present study, sorption behavior of phosphate onto magnesite was investigated under different conditions. The optimum pH of phosphate adsorption was determined to be 6.0. The adsorption capacity was found to decrease with increasing temperature, which indicates that a low temperature was beneficial for phosphate adsorption. The sorption capacity for phosphate was found to be 10.2 mg/g at an initial concentration of 100 mg/L and a dose of 2 g/L. The first order kinetic equation and Freundlich isotherm model fit the data well. Phosphate adsorption on magnesite was explained by electrostatic attraction and weak physical interactions.

• Bulletin of the Korean Chemical Society
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• v.23 no.2
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• pp.225-228
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• 2002

Amorphous $Ga_2O_3$ films have been grown on Si(100) substrates by metal organic chemical vapor deposition (MOCVD) using gallium isopropoxide, $Ga(O^iPr)_3$, as single precursor. Deposition was carried out in the substrate temperature range 400-800 $^{\circ}C$. X-ray photoelectron spectroscopy (XPS) analysis revealed deposition of stoichiometric $Ga_2O_3$ thin films at 500-600 $^{\circ}C$. XPS depth profiling by $Ar^+$ ion sputtering indicated that carbon contamination exists mostly in the surface region with less than 3.5% content in the film. Microscopic images of the films by scanning electron microscopy (SEM) and atomic force microscopy (AFM) showed formation of grains of approximately 20-40 nm in size on the film surfaces. The root-mean-square surface roughness from an AFM image was ${\sim}10{\AA}$. The interfacial layer of the $Ga_2O_3$/Si was measured to be ${\sim}35{\AA}$ thick by cross-sectional transmission electron microscopy (TEM). From the analysis of gaseous products of the CVD reaction by gas chromatography-mass spectrometry (GC-MS), an effort was made to explain the CVD mechanism.

• Proceedings of the Korean Society of Dyers and Finishers Conference
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• 2009.03a
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• pp.138-139
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• 2009

• Proceedings of the Korean Society For Composite Materials Conference
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• 1999.04a
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• pp.114-118
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• 1999

• Proceedings of the Materials Research Society of Korea Conference
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• 1999.05a
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• pp.59-59
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• 1999

• Proceedings of the Materials Research Society of Korea Conference
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• 1998.08a
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• pp.123.3-123
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• 1998

• Proceedings of the Korean Vacuum Society Conference
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• 2013.08a
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• pp.144.2-144.2
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• 2013

With the synthesis of graphene sheets as large-scale and high quality, it is essentially important to develop suitable graphene patterning process for future industrial applications. Especially, transfer or patterning method of CVD-grown graphene has been studied. We report simple soft lithographic process to develop easily applicable patterning method of large-scale graphene sheets by using chemically functionalized polymer stamp. Also important applications, the prototype capacitors with graphene electrode and commercial polymer dielectrics for the electrostatic-type touch panel are fabricated using the developed soft lithographic patterning and transfer process.

• Proceedings of the Korean Powder Metallurgy Institute Conference
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• 2003.10a
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• pp.109-109
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• 2003

• Journal of Powder Materials
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• v.25 no.1
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• pp.7-11
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• 2018

In this study, we synthesize tungsten oxide thin films by electrodeposition and characterize their electrochromic properties. Depending on the deposition modes, compact and porous tungsten oxide films are fabricated on a transparent indium tin oxide (ITO) substrate. The morphology and crystal structure of the electrodeposited tungsten oxide thin films are investigated by scanning electron microscopy (SEM) and X-ray diffraction (XRD). X-ray photoelectron spectroscopy is employed to verify the chemical composition and the oxidation state of the films. Compared to the compact tungsten oxides, the porous films show superior electrochemical activities with higher reversibility during electrochemical reactions. Furthermore, they exhibit very high color contrast (97.0%) and switching speed (3.1 and 3.2 s). The outstanding electrochromic performances of the porous tungsten oxide thin films are mainly attributed to the porous structure, which facilitates ion intercalation/deintercalation during electrochemical reactions.

• 한국정보디스플레이학회:학술대회논문집
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• 2007.08b
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• pp.1526-1528
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• 2007

In this report, Manganese doped magnesium germanate ($Mg_4GeO_2:Mn$) phosphor has been synthesized by the solid state method. Also, this phosphor was prepared by simple process under an air atmosphere for oxidation of Mn. The prepared phosphor shows a main luminescent peak at 661nm. Therefore, this phosphor is possible to be applicable to white LED lamp by GaN or InGaN chips.