• Proceedings of the Korean Vacuum Society Conference
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• 2013.02a
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• pp.642-642
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• 2013

Graphene, two dimensional single layer of carbon atoms, has tremendous attention due to its superior property such as high electron mobility, high thermal conductivity and optical transparency. Especially, chemical vapor deposition (CVD) grown graphene has been used as a promising material for high quality and large-scale graphene film. Unfortunately, although CVD-grown graphene has strong advantages, application of the CVD-grown graphene is limited due to ineffective transfer process that delivers the graphene onto a desired substrate by using polymer support layer such as PMMA(polymethyl methacrylate). The transferred CVD-grown graphene has serious drawback due to remaining polymeric residues generated during transfer process, which induces the poor physical and electrical characteristics by a p-doping effect and impurity scattering. To solve such issue incurred during polymer transfer process of CVD-grown graphene, various approaches including thermal annealing, chemical cleaning, mechanical cleaning have been tried but were not successful in getting rid of polymeric residues. On the other hand, lithographical patterning of graphene is an essential step in any form of microelectronic processing and most of conventional lithographic techniques employ photoresist for the definition of graphene patterns on substrates. But, application of photoresist is undesirable because of the presence of residual polymers that contaminate the graphene surface consistent with the effects generated during transfer process. Therefore, in order to fully utilize the excellent properties of CVD-grown graphene, new approach of transfer and patterning techniques which can avoid polymeric residue problem needs to be developed. In this work, we carried out transfer and patterning process simultaneously with no polymeric residue by using a metal etch mask. The patterned thin gold layer was deposited on CVD-grown graphene instead of photoresists in order to make much cleaner and smoother surface and then transferred onto a desired substrate with PMMA, which does not directly contact with graphene surface. We compare the surface properties and patterning morphology of graphene by scanning electron microscopy (SEM), atomic force microscopy(AFM) and Raman spectroscopy. Comparison with the effect of residual polymer and metal on performance of graphene FET will be discussed.

• Journal of the Korean Chemical Society
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• v.21 no.5
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• pp.320-329
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• 1977

p-Phenylenediamine dihydroperchlorate, $C_6H_4N_2H_4{\cdot}2HC1O_4$, crystallizes in space group $P\={1}$ with $a=4.79{\pm}0.02,\;b=9.03{\pm}0.02,\;c=7.12{\pm}0.03{\AA},\;{\alpha}=109.4{\pm}0.2,\;{\beta}=79.6{\pm}0.2,\;r=104.6{\pm}0.2^{\circ},\;Z=1$. The structure has been solved by the Patterson and Fourier methods. The refinement by block-diagonal least-squares cycles gives R = 0.13 for 387 observed reflexions collected on equi-inclination Weissenberg photographs with CuK${\alpha}$ radiation. There are two different types of five hydrogen bonds. The first type consists of one trifurcated N${\cdot}{\cdot}{\cdot}$O hydrogen bond and the second of two normal N${\cdot}{\cdot}{\cdot}$O hydrogen bonds, both of which exist between the amino group and the perchlorate, groups. A p-phenylenediamine group is approximately planar within an experimental error and bonded to twelve perchlorates: ten perchlorates forming hydrogen bonds and two being contacted with the van der Waals forces. A perchlorate group is surrounded by six p-phenylenediamines and four perchlorates; among the six p-phenylenediamines, five of them are hydrogen-bonded, and the rest contacted with the van der Waals force.ce anaysis of our samples and investigated the variarions in the values of parameters obtained through fitting the theoretical impedance to the experimental impedance. The characters of the dielectric constant and the impedance showed abnormal variations for the 0.2 at K-doped NSBN ceramics, which we were able to interpret in terms of the variations in the number A-site vacancies with the K doping ratio. From these results, A-site vacancies are thought to be space charges that influence the ferroelectric properties of NSBN ceramics.

• Journal of the Korean Chemical Society
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• v.54 no.6
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• pp.766-770
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• 2010

This is the study of magnetic properties of transition metal doped diluted magnetic semiconductors(DMSs). The wurtzite structure samples were synthesized by the sol-gel method. The thermodynamic characteristics and magnetic properties of $Zn_{1-x}Co_xO$ single phase was investigated for different doping concentration (x = 0%, 1%, 2%, 3%, 4%, 5%, 10%, 15%). The property of diluted magnetic semiconductors has been comfirmed by X-ray diffraction (XRD), Scanning Electronic Microscope (SEM) and Vibrating sample magnetometer (VSM). The magnetic properties of pure $Zn_{1-x}Co_xO$ is found to be dominated by the ferromagnetic interaction between doped transition metal ions, where by the ferromagnetic coupling strength is simply increased with the concentration(>5%) of the doped transition metal.

• Journal of the Korean Chemical Society
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• v.27 no.3
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• pp.183-188
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• 1983

The catalytic oxidation of $SO_2$ has been investigated in the presence of vacuum-activated 10 mol % Ni-doped ${\alpha}-Fe_2O_3$ under various partial pressures of $SO_2\;and\;O_2$ at temperatures from 320 to $440{\circ}C$. Over the temperature range $320{\sim}440{\circ}C$, the activation energy is 13.8 $kcal{\cdot}mol^{-1}$. The oxidation rates have been correlated with 1.5 order kinetics; first order with respect to $SO_2$ and 0.5 order with respect to $O_2$. From the kinetic data and conductivity measurements, the adsorption, oxidation mechanism of $SO_2$ and the defect structure of vacuum-activated 10 mol % Ni-doped {\alpha}-Fe_2O_3$ are suggested. $O_2\;and\;SO_2$ appear to be adsorbed essentially as ionic species. Two surface sites, probably an $O^{2-}$ lattice and an oxygen vacancy which is induced by Ni-doping, might be required to adsorb $SO_2\;and\;O_2$. The conductivity measurements and kinetic data indicate that the adsorption process of $SO_2\;{(SO_2+O^{2-}}_{(latt)}{\rightleftharpoons}{{SO_3}^-}_{(ads)}+e')$ is the rate-determining step.

• Bulletin of the Korean Chemical Society
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• v.24 no.5
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• pp.559-565
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• 2003

An analytical method the determination of benzo(a)pyrene (BaP) and its hydroxylated metabolites, 1-hydroxybenzo(a)pyrene (1-OHBaP), 3-hydroxybenzo(a)pyrene (3-OHBaP), benzo(a)pyrene-4,5-dihydrodiol (4,5-diolBaP) and benzo(a)pyrene-7,8-dihydrodiol (7,8-diolBaP), in rat urine and plasma has been developed by HPLC/FLD and GC/MS. The derivatization with alkyl iodide was employed to improve the resolution and the detection of two mono hydroxylated metabolites, 1-OHBaP and 3-OHBaP, in LC and GC. BaP and its four metabolites in spiked urine were successfully separated by gradient elution on reverse phase ODS $C_{18}$ column (4.6 mm I.D., 100 mm length, particle size 5 ㎛) using a binary mixture of MeOH/H₂O (85/15, v/v) as mobile phase after ethylation at 90 ℃ for 10 min. The extraction recoveries of BaP and its metabolites in spiked samples with liquid-liquid extraction, which was better than solid phase extraction, were in the range of 90.3- 101.6% in n-hexane for urine and 95.7-106.3% in acetone for plasma, respectively. The calibration curves has shown good linearity with the correlation coefficients (R²) varying from 0.992 to 1.000 for urine and from 0.996 to 1.000 for plasma, respectively. The detection limits of all analytes were obtained in the range of 0.01-0.1 ng/mL for urine and 0.1-0.4 ng/mL for plasma, respectively. The metabolites of BaP were excreted as mono hydroxy and dihydrodiol forms after intraperitoneal injection of 20 mg/kg of BaP to rats. The total amounts of BaP and four metabolites excreted in dosed rat urine were 3.79 ng over the 0-96 hr period from adminstration and the excretional recovery was less than 0.065% of the injection amounts of BaP. The proposed method was successfully applied to the determination of BaP and its hydroxylated metabolites in rat urine and plasma for the pharmacokinetic studies.

• KEPCO Journal on Electric Power and Energy
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• v.1 no.1
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• pp.169-174
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• 2015

In this research, pristine graphene was synthesized using methane ($CH_4$) gas, and N-doped graphene was synthesized using pyridine ($C_5H_5N$) liquid source by chemical vapor deposition (CVD) method. Basic optical properties of both pristine and N-doped graphene were investigated by Raman spectroscopy and XPS (X-ray photoemission spectroscopy), and electrical transport characteristics were estimated by current-voltage response of graphene channel as a function of gate voltages. Results for CVD grown pristine graphene from methane gas show that G-peak, 2D-peak and C1s-peak in Raman spectra and XPS. Charge neutral point (CNP; Dirac-point) appeared at about +4 V gate bias in electrical characterization. In the case of pyridine based CVD grown N-doped graphene, D-peak, G-peak, weak 2D-peak were observed in Raman spectra and C1s-peak and slight N1s-peak in XPS. CNP appeared at -96 V gate bias in electrical characterization. These result show successful control of the property of graphene artificially synthesized by CVD method.

• Applied Chemistry for Engineering
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• v.25 no.3
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• pp.274-280
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• 2014

Polysulfone (PSf) hollow fiber membranes were prepared via the nonsolvent induced phase separation technique. The cosolvent of ${\gamma}$-butyrolactone (GBL) was added to the polymer solution containing a mixture of PSf and N,N-dimethylacetamide (DMAc). Water was utilized as a precipitation nonsolvent. The morphology of prepared membranes was investigated using a field emission scanning electron microscopy. The fabricated membrane showed a typical asymmetric structure such as the dense layer on the porous support layer by the addition of GBL to the polymer solution. As the concentration of GBL increased, the asymmetric porous structure was shown to be more intensified. It was thought that the added GBL played a role of enhancing the liquid-liquid phase separation of the polymer solution, since the cosolvent of GBL might change the thermodynamic solubility parameter of the doping solution. Permeation properties through the prepared hollow fiber membranes were characterized by measuring the pure water flux and the solute rejection using $0.05{\mu}m$ polystyrene latex (PSL) beads. Experimental results revealed that the use of PEG as the internal coagulant enhanced the pure water flux up to 130 times compared to the use of EG while the rejection of the PSL beads decreased only 5%.

• Bulletin of the Korean Chemical Society
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• v.21 no.10
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• pp.1041-1043
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• 2000

We present the effects of temperature (between 10 K and 298 K) and of hole concentration on the frequency and intensity of characteristic phonons in polycrystalline $La_2CuO_4-related$ compounds using FT-IR spectros-copy. The influences of the concentration of carrier doped on the phonon modes are prominent in the IR spectra of $La_2CuO_4-related$ compounds. For $La_2-xSrxCuO_4({\chi}=$ 0.00, 0.03, 0.07, 0.10, and 0.15) and electrochemically (or chemically) oxidized $La_2CuO_4$, the intensities of the transverse oxygen mode around 680cm $-^1$ which cor-responds mainly to Cu-O(1) stretching vibration in the basal plane of CuO6 octahedron, are decreased and dis-appeared depending on the Sr-substitution rate and the amount of excess oxygen, while the longitudinal oxygen mode around 510 cm $-^1$ corresponding to the Cu-O(2) stretching in the basal plane of CuO6 octahedron are near-ly invariable. In particular, after two cycles of cooling-heating between 10 K and 298 K for these sample, the phonons around 680 cm $-^1$ are blue shif 13-15 cm $-^1$, while the phonons around 510 cm $-^1$ are nearly constant. The introduction of the charge carrier by doping would give rise to the small contraction of CuO6 oc-tahedron as Cu $^3+$ requires a smaller site than Cu $^2+$, which results in the shortening of the Cu-O(1) bond length and Cu-O(2) bond length with the increased La-O(2) bond length. These results in the frequency shift of the characteristic phonons. The IR spectra of $La_2Li0.5Cu0.5O_4$ which exhibits an insulator behavior despite the $Cu^3+$ of nearly 100%, corroborate our IR interpretations. The mode around 710 cm $-^1$ corresponding to Cu-O(1) stretching vibration is still strongly remained even at low temperature (10 K). Thus, we conclude that the con-duction electrons formed within $CuO_2$ planes of $La_2CuO_4-related$ superconductors screen more effectively the transverse oxygen breathing mode around 680 $cm-^1$ depending on the concentration of the doped charge carrier in $La_2CuO_4-related$ compounds, which might use as a superconductivity probe.

• Proceedings of the Korea Association of Crystal Growth Conference
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• 1996.06a
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• pp.75-87
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• 1996

This review is presented under the following headings: 1.Introduction 1.1 Brief review of the properties of AlN 1.2 Historical survey of work on ceramic and single crystal AlN 2.Thermochemical background 3.Crystal growth 4.Doping 5.Potential applications and future work The known properties of AlN which make it of interest for various are discussed briefly. The properties include chemical stability, crystal structure and lattice constants, refractive indices and other optical properties, dielectric constant, surface acoustic wave velocity and thermal conductivity. The history of work in single crystals, thin films and ceramics are outlined and the thermochemistry of AlN reviewed together with some of the relevant properties of aluminium and nitrogen; the problems encountered in growing crystals of AlN are shown to arise directly from these thermochemical relationships. Methods have been reported in the literature for growing AlN crystals from melts, solution and vapour and these methods are compared critically. It is proposed that the only practicable approach to the growth of AlN is by vapour phase methods. All vapour based procedures share the share the same problems: $.$the difficulty of preventing contamination by oxygen & carbon $.$the high bond energy of molecular nitrogen $.$the refractory nature of AlN (melting point~3073K at 100ats.) $.$the high reactivity of Al at high temperatures It is shown that the growth of epitactic layers and polycrystalline layers present additional problems: $.$chemical incompatibility of substrates $.$crystallographic mismatch of substrates $.$thermal mismatch of substrates The result of all these problems is that there is no good substrate material for the growth of AlN layers. Organometallic precursors which contain an Al-N bond have been used recently to deposit AlN layers but organometallic precursors gave the disadvantage of giving significant carbon contamination. Organometallic precursors which contain an Al-N bound have been used recently to deposit AlN layers but organometallic precursors have the disadvantage of giving significant carbon contamination. It is conclude that progress in the application of AlN to optical and electronic devices will be made only if considerable effort is devoted to the growth of larges, pure (and particularly, oxygen-free) crystals. Progress in applications of epi-layers and ceramic AlN would almost certainly be assisted also by the availability of more reliable data on the pure material. The essential features of any stategy for the growth of AlN from the vapour are outlined and discussed.

• Journal of the Korean Electrochemical Society
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• v.1 no.1
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• pp.1-7
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• 1998

For the purpose of finding new cathode materials for medium-temperature $(700\~800^{\circ}C)$ solid oxide fuel cells, $Gd_{0.8}Ca_{0.2}Co_{1-x}Fe_xO_3,\;(x=0.0\~0.5)$ are prepared, and their thermal stability and conductivity characteristics are investigated. Also, the cathodic activities are measured after the cathode layer being attached on CGO (cerium-gadolinium oxide) electrolyte disk. The X-ray analyses indicate that the materials prepared by calcining the citrate-gels at $800^{\circ}C$ have the orthorhombic perovskite structure without discernible impurities. The thermal stability of the undoped Co perovskite is so poor that it is decomposed to the individual binary oxide even at $1300^{\circ}C$. But the partially Fe-doped cobaltates exhibit a better thermal stability to retain their structural integrity up to $1400^{\circ}C$. The observation whereby both the undoped and Fe-doped cobaltates melt at ca. $1300^{\circ}C$ leads us to perform the electrode adhesion at <$1300^{\circ}C$. The cathodic activity of $Gd_{0.8}Ca_{0.2}Co_{1-x}Fe_xO_3,\;(x=0.0\~0.5)$, electrodes is superior to $La_{0.9}Sr_{0.1}MnO_3$, among the samples of $x=0.0\~0.5$, the x=0.2 cathode shows the best activity for the oxygen reduction reaction. It is likely that the Fe-doping provides a better thermal stability to the materials but in turn imparts an inferior cathodic activity, such that the optimum trade-off is made at x=0.2 between the two factors. The total electrical conductivity and ion conductivity of $Gd_{0.8}Ca_{0.2}Co_{1-x}Fe_xO_3$, are measured to be 51 S/cm and $6.0\times10^{-4}S/cm\;at\;800^{\circ}C$, respectively. The conductivity values illustrate that the materials are a mixed conductor and the reaction sites can be expanded to the overall electrode surface, thereby providing a better cathodic activity than $La_{0.9}Sr_{0.1}MnO_3$.