• Journal of the Semiconductor & Display Technology
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• v.4 no.2 s.11
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• pp.1-5
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• 2005

Electon spin resonance measurements have been performed on the Mg-doped wurtzite GaN thin films grown on sapphire substrates by low-pressure metal-organic chemical vapor deposition. The sample set included films as-grown with the regular Mg doped and Mg delta doped samples and the corresponding annealed ones. The resonance signal has been observed from the annealed Mg delta-doped sample with the Lande g value of 2.029. This indicates that the singlet resonance signal originates from the neutral Mg acceptor located at 0.24 eV above the valence band edge and 0.13 eV above the Fermi level because of the nuclear hyperfine spin 1=0 of Mg and the larger value than the free electron g=2.0023.

• KIEE International Transactions on Electrophysics and Applications
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• v.11C no.3
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• pp.53-57
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• 2001

The organic light-emitting devices (OLEDs) based on fluorescence have low efficiency due to the requirement of spin-symmetry conservation. By using the phosphorescent material, internal quantum efficiency can reach 100%, compared with 25% in the case of the fluorescent material. Thus, phosphorescent OLEDs have recently been extensively studied and shown higher internal quantum efficiency than the conventional OLEDs. In this study, we investigated the characteristics of the phosphorescent OLEDs with the green emitting phosphor, $Ir(ppy)_3$ (tris(2-phenylpyridine)iridium). The device with a structure of ITO/TPD$Ir(ppy)_3$ doped in BCP/BCP/$Alq_3$/Li:Al/Al was fabricated, and its electrical and optical characteristics were studied. By changing the doping concentration of $Ir(ppy)_3$, we fabricated several devices and investigated their characteristics.

• Journal of the Korean Ceramic Society
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• v.37 no.8
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• pp.774-780
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• 2000

In order to improve luminescence prperty of phosphors, we have synthesized Zn2SiO4:Mn phosphors by a new chemical synthetic route, i.e., the homogeneous precipitation method. This method has featured that the formation of phosphoris completed at relatively low temperature of 105$0^{\circ}C$ and the particle morphology exhibits spherical shape to be well-dispersed and uniform size. At all the Mn concentration explored, phosphors prepared by this method have exhibited the improved emission intensities. In particular, the emission intensities of phosphors with Mn doping contents between 1 at% and 3.5 at% were higher about 40% than that of commercial phosphor. On the other hand, the decay time has been decreased from 23 ms to 11 ms with increasing Mn concentration. In addition, the phosphor composition containing 3 at% Mn has displayed the most saturated color.

• Proceedings of the KIEE Conference
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• 1987.07a
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• pp.513-516
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• 1987

Hydrogenated amorphous silicon (a-Si:H) films have been deposited, for thye first time, by a remote plasma chemical vapor deposition. The hydrogen radical play a important role to control the deposition rate, The bonded hydrogen content to silicon is independent of hydrogen partial pressure in the plasma. Optical gap of deposited a-Si:H lies between 1.7eV and 1.8eV and all samples have sharp absorption edge. B-doped a-Si:H films by a RPECVD has a high doping efficiency compared with plasma CVD. The Fermi level of 100ppm B-doped film lies at 0.5eV above valence band edge.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2008.11a
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• pp.9-10
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• 2008

Triple layers structure of $SiO_2$/ZnS:Mn/ZnS was synthesized by using ion substitution and chemical precipitation method. Each layer thickness was controlled by adjusting the concentration of manganese (II) acetate ($Mn(CH_3COO)_2$) and tetraethyl orthosilicate (TEOS). The structure and morphology of prepared phosphors were investigated by X-ray diffraction (XRD), scanning electron microscopy (SEM) and electron probe microscopic analyzer (EPMA). Photoluminescence (PL) properties of ZnS with different layer thickness and amount of Mn activator were analyzed by PL spectrometer. PL emission intensity and PL stability were analyzed for evaluating effects of Mn activator.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.02a
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• pp.178-178
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• 2010

We have deposited aluminum-doped ZnO thin films on borosilicate glass by atomic layer deposition. Diethylzinc (DEZ) and dimethylaluminum isopropoxide (DMAIP) were used as the metal precursor and the Al-dopant, respectively. Water was used as an oxygen source. DMAIP was successfully used as an aluminum precursor for chemical vapor deposition and ALD. All deposited films showed n-type conduction. The resistivity decreased to a minimum and then increased with increasing the aluminum content. The carrier concentration increased and the carrier mobility decreased with increasing the DMAIP to DEZ pulse ratio. The average optical transmittance was nearly 80 % in the visible part of the spectrum. The absorption edge moved to the shorter wavelength region with increasing the DMAIP to DEZ pulse ratio. Our results indicate that DMAIP is suitable for Al doping of ZnO films.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2012.05a
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• pp.295-295
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• 2012

The $TiO_2$ films were prepared in the $H_2SO_4$ solution containing $NH_4F$ at different anodic voltages, to compare the photocatalytic performances of titania for purification of waste water. The microstructure was characterized by a Field-emission scanning electron microscopy (FE-SEM) and X-ray diffractometry (XRD). Chemical bonding states and co-doped elements of F and N were analyzed using surface X-ray photoelectron spectroscopy (XPS). The photocatalytic activity of the co-doped $TiO_2$ films was analyzed by the degradation of aniline blue solution. From the result of diffuse reflectance absorption spectroscopy(DRS), it is indicated that the absorption edge of the F-N-codoped $TiO_2$ films shifted toward visible light area, and the photocatalytic reaction of $TiO_2$ was improved by doping an appropriate contents of F and N.

• Mass Spectrometry Letters
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• v.12 no.1
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• pp.26-30
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• 2021

The impurity concentration is a crucial parameter for semiconductor thin films. Evaluating the impurity distribution in silicon thin film is another challenge. In this study, we have investigated the doping concentration of boron in silicon thin film using time of flight secondary ion mass spectrometry in dynamic mode of operation. Boron doped silicon film was grown on i) p-type silicon wafer and ii) borosilicate glass using hot wire chemical vapor deposition technique for possible applications in optoelectronic devices. Using well-tuned SIMS measurement recipe, we have detected the boron counts 101~104 along with the silicon matrix element. The secondary ion beam sputtering area, sputtering duration and mass analyser analysing duration were used as key variables for the tuning of the recipe. The quantitative analysis of counts to concentration conversion was done following standard relative sensitivity factor. The concentration of boron in silicon was determined 1017~1021 atoms/㎤. The technique will be useful for evaluating distributions of various dopants (arsenic, phosphorous, bismuth etc.) in silicon thin film efficiently.

• Proceedings of the Korean Powder Metallurgy Institute Conference
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• 2006.09a
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• pp.668-669
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• 2006

The influence of $Eu^{3+}$ doping on the structural and morphological properties of the $Gd_2O_3:Eu^{3+}$ phosphor system, obtained ultrasonically via Spray Pyrolysis from common gadolinium and europium nitrate solutions, was studied. The particle morphology, crystalline and chemical structure were studied by XRD, SEM and EDS. TEM was applied in order to identify the structure and growth of "primary nanoparticles" and determine the presence of domains locally affected by "Moires Frames" and "Crystallite Size". The SADP allows determining the presence of a polycrystalline material with two phases in the "as-prepared" samples, and only an Ia3 phase along the thermal treatment.

• Advances in nano research
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• v.14 no.5
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• pp.451-461
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• 2023

Two-dimensional (2D) materials have been attracting attention since graphene monolayer was firstly separated. However, after an explosive boom, there is always quandary and stagnancy following and soon will come the refractory period of capital market. To avoid that undesired future, a paradigm of quasi 2D monolayer has been contemplated and devised in this article, with examples studied theoretically. The results show the general dynamic nonlinearity, and the expected tunability of bandgap without extra doping or substitution. These together suggest its intriguing both electronical and mechanical properties, which will enrich the arsenal of potential 2D materials.