• Bulletin of the Korean Chemical Society
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• v.34 no.10
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• pp.2995-3004
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• 2013

The structural, electronic, and optical properties of poly(3-hexylthiophene) (P3HT) have been comprehensively studied by density functional theory (DFT) to rationalize the experimentally observed properties. Rather, we employed periodic boundary conditions (PBC) method to simulate the polymer block, and calculated effective charge mass from the band structure calculation for describing charge transport properties. The simulated results of P3HT are consistent with the experimental results in band gaps, absorption spectra, and effective charge mass. Based on the same calculated methods as P3HT, a series of polymers have been designed on the basis of the two types of building blocks, furofurans and furofurans substituted with cyano (CN) groups, to investigate suitable polymers toward polymer solar cell (PSC) materials. The calculated results reveal that the polymers substituted with CN groups have good structural stability, low-lying FMO energy levels, wide absorption spectra, and smaller effective masses, which are due to their good rigidity and conjugation in comparison with P3HT. Besides, the insertion of CN groups improves the performance of PSC. Synthetically, the designed polymers PFF1 and PFF2 are the champion candidates toward PSC relative to P3HT.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.22 no.9
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• pp.728-731
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• 2009

We report numerical simulations to investigate of the dependendce of the on/off current ratio and channel charge distributions in silicon nanowire (SiNW) field-effect transistors (FETs) on the channel width and thicknesses. In order to investigate the transport behavior in devices with different channel geometries, we have performed detailed two-dimensional simulations of SiNWFETs and control FETs with a fixed channel length L of $10\;{\mu}m$, but varying the channel width W from 5 nm to $5\;{\mu}m$, and thickness t from 10 nm to 30 nm. We have show that $Q_{ON}/Q_{OFF}$ drastically decreases (from $^{\sim}2.9{\times}10^4$ to $^{\sim}9.8{\times}10^3$) as the channel thickness increases (from 10 nm to 30 nm). As a result of the simulation using a quantum model, even higher charge density in the bottom of SiNW channel was observed then in the bottom of control channel.

• Korean Journal of Materials Research
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• v.7 no.5
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• pp.403-410
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• 1997

본 연구는기존의 보고에서 보다 감광화효율을 더욱 향상시키기 위하여 결정형이 다른 전하발생물질 (CGM:Charge Generation Material)과 전하수송물질(CTM:Charge Transport Material)을 사용하여 감광체를 만들었고, 이들의 정전특성을 비교검토하였다. 전하발생물질로서 결정형이 다른 $\alpha$-, $\beta$-, x-형 무금속 프탈로시아닌 (H$_{2}$Pc)을 사용한 결과, x-H$_{2}$Pc를 사용한 감광체의 감도는 E$_{1}$2/의 값이 2.62 $\mu$J/$\textrm{cm}^2$로 가장 두수하게 나타났다. 전하발생층(CGL:Charge Generation Layer)에 첨가되는 CGM-CTM, CGM-CTM-ZnO로 구성된 감광체보다 전하발생층에 전하발생계만으로 구성된 감광체의 경우의 전하유지율 (80%) 및 감도(E$_{1}$2/=2.83$\mu$J/$\textrm{cm}^2$)면에서 우수함을 보여주었다. 한편 binder로서 PVB-co-PVA-co-PVA$_{c}$[poly(viny1 butyral-co-viny1 alcohol-co-viny1 acetate)]를 사용했을 때는, CGM-CTM으로 구성된 감광체보다 CGL에 CGM-CTM으로 구성된 감광체의 경우의 전하유지율(71%) 및 감도(E$_{1}$2/=2.62$\mu$J/$\textrm{cm}^2$)면에서 우수함을 보여주었다.

• Korea-Australia Rheology Journal
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• v.15 no.2
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• pp.83-90
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• 2003

In cases of the microfluidic channel, the electrokinetic influence on the transport behavior can be found. The externally applied body force originated from the electrostatic interaction between the nonlinear Poisson-Boltzmann field and the flow-induced electrical field is applied in the equation of motion. The electrostatic potential profile is computed a priori by applying the finite difference scheme, and an analytical solution to the Navier-Stokes equation of motion for slit-like microchannel is obtained via the Green's function. An explicit analytical expression for the induced electrokinetic potential is derived as functions of relevant physicochemical parameters. The effects of the electric double layer, the zeta potential of the solid surface, and the charge condition of the channel wall on the velocity profile as well as the electroviscous behavior are examined. With increases in either electric double layer or zeta potential, the average fluid velocity in the channel of same charge is entirely reduced, whereas the electroviscous effect becomes stronger. We observed an opposite behavior in the channel of opposite charge, where the attractive electrostatic interactions are presented.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.02a
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• pp.379-379
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• 2010

Recent technical advances in OLEDs (organic light emitting devices) requires more and more the improvement in low operation voltage, long lifetime, and high luminance efficiency. Inverted top emission OLEDs (ITOLED) appeared to overcome these problems. This evolved to operate better luminance efficiency from conventional OLEDs. First, it has large open area so to be brighter than conventional OLEDs. Also easy integration is possible with Si-based driving circuits for active matrix OLED. But, a proper buffer layer for carrier injection is needed in order to get a good performance. The buffer layer protects underlying organic materials against destructive particles during the electrode deposition and improves their charge transport efficiency by reducing the charge injection barrier. Hexaazatriphenylene-hexacarbonitrile (HAT-CN), a discoid organic molecule, has been used successfully in tandem OLEDs due to its high workfunction more than 6.1 eV. And it has the lowest unoccupied molecular orbital (LUMO) level near to Fermi level. So it plays like a strong electron acceptor. In this experiment, we measured energy level alignment and hole current density on inverted OLED structures for hole injection. The normal film structure of Al/NPB/ITO showed bad characteristics while the HAT-CN insertion between Al and NPB greatly improved hole current density. The behavior can be explained by charge generation at the HAT-CN/NPB interface and gap state formation at Al/HAT-CN interface, respectively. This result indicates that a proper organic buffer layer can be successfully utilized to enhance hole injection efficiency even with low work function Al anode.

• Korean Journal of Metals and Materials
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• v.56 no.11
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• pp.822-828
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• 2018

P-type Ce/Yb-filled skutterudites were synthesized, and their charge transport and thermoelectric properties were investigated with partial double filling and charge compensation. In the case of $(Ce_{1-z}Yb_z)_{0.8}Fe_4Sb_{12}$ without Co substitution, the marcasite ($FeSb_2$) phase formed alongside the skutterudite phase, but the generation of the marcasite phase was inhibited by increasing Co concentration. The electrical conductivity decreased with increasing temperature, exhibiting degenerate semiconductor behavior. The Hall and Seebeck coefficients were positive, which confirmed that the specimens were p-type semiconductors with holes as the major carriers. The carrier concentration decreased as the concentration of Ce and Co increased, which led to decreased electrical conductivity and increased Seebeck coefficient. The thermal conductivity decreased due to a reduction in electronic thermal conductivity via Co substitution, and due to decreased lattice thermal conductivity via double filling of Ce and Yb. $(Ce_{0.25}Yb_{0.75})_{0.8}Fe_{3.5}Co_{0.5}Sb_{12}$ exhibited the greatest dimensionless figure of merit (ZT = 0.66 at 823 K).

• Bulletin of the Korean Chemical Society
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• v.22 no.7
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• pp.709-715
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• 2001

We have been studied photosensitization mechanism's additive effect, of perylene 3,4,9,10-tetracarboxyl-diimide and X-phthalocyanine (charge generation materials), using the photochemical and photoelectrochemical approach. It was found that the photoreceptor on the excited state reacts with metal oxide, which creates the charge transfer on the interface of SnO2/electrolyte. In the electrode (X5P1) made of five X-phthalocyanine and single perylene 3,4,9,10-tetracarboxyldiimide layers, the cathodic photocurrent of X-phthalocyanine in the 400-600 nm region was increased by the addition of perylene 3,4,9,10-tetracarboxyldiimide. The maximum wavelength of fluorescence of perylene 3,4,9,10-tetracarboxyldiimide showed no dependence on the temperature. The addition of 4-dibenzylamino-2-methylbenzaldehyde diphenylhydrazone known as charge transport material was represented as decreasing photocurrent for X-phthalocyanine and perylene 3,4,9,10-tetracarboxyldiimide, respectively. In the electrode (X1P1) made of single X-phthalocyanine and single perylene 3,4,9,10-tetracarboxyldiimide layers, an anodic photocurrent of about 10.5 nA was generated by addition of hydroquinone at 550 nm. And the characteristic of photoinduced discharge was shown to decrease by a factor of 5 and the speed of dark decay was increased by a factor of 1.2.

• Proceedings of the Korean Vacuum Society Conference
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• 2016.02a
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• pp.417-417
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• 2016

Global environmental deterioration has become more serious year by year and thus scientific interests in the renewable energy as environmental technology and replacement of fossil fuels have grown exponentially. Photoelectrochemical (PEC) cell consisting of semiconductor photoelectrodes that can harvest light and use this energy directly to split water, also known as photoelectrolysis or solar water splitting, is a promising renewable energy technology to produce hydrogen for uses in the future hydrogen economy. A major advantage of PEC systems is that they involve relatively simple processes steps as compared to many other H2 production systems. Until now, a number of materials including TiO2, WO3, Fe2O3, and BiVO4 were exploited as the photoelectrode. However, the PEC performance of these single absorber materials is limited due to their large charge recombinations in bulk, interface and surface, leading low charge separation/transport efficiencies. Recently, coupling of two materials, e.g., BiVO4/WO3, Fe2O3/WO3 and CuWO4/WO3, to form a type II heterojunction has been demonstrated to be a viable means to improve the PEC performance by enhancing the charge separation and transport efficiencies. In this study, we have prepared a triple-layer heterojunction BiVO4/WO3/SnO2 photoelectrode that shows a comparable PEC performance with previously reported best-performing nanostructured BiVO4/WO3 heterojunction photoelectrode via a facile solution method. Interestingly, we found that the incorporation of SnO2 nanoparticles layer in between WO3 and FTO largely promotes electron transport and thus minimizes interfacial recombination. The impact of the SnO2 interfacial layer was investigated in detail by TEM, hall measurement and electrochemical impedance spectroscopy (EIS) techniques. In addition, our planar-structured triple-layer photoelectrode shows a relatively high transmittance due to its low thickness (~300 nm), which benefits to couple with a solar cell to form a tandem PEC device. The overall PEC performance, especially the photocurrent onset potential (Vonset), were further improved by a reactive-ion etching (RIE) surface etching and electrocatalyst (CoOx) deposition.

• The Transactions of the Korean Institute of Electrical Engineers
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• v.32 no.7
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• pp.234-238
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• 1983

This paper presents a steady-state computer solution of one-dimensional transport equations, describing a double(metal-semiconductor-metal) contact device, involving only one type of charge carrier. Most of the assumptions and approximations which are ordinarily introduced in order to make the transport equations analytically soluble are avoided here. The results are presented mainly in the form of(a) energy contours (b) concentration contours and (c) I-V characteristics. A computation of differential system capacitance as a function of applied voltage is also presented and schematic corrections are introduced for image force effects.

• Journal of the Korean Ceramic Society
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• v.43 no.2 s.285
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• pp.131-135
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• 2006

In this study, the dielectric, magnetic and transport properties of $Gd_{0.33}Sr_{0.67}FeO_3$ have been analyzed. The dielectric loss anomaly was found to be around 170 K. The activation energy corresponding to relaxation process of this dielectric anomaly was 0.17 eV. From the temperature dependence of the characteristic frequency, we concluded that the elementary process of the dielectric relaxation peak observed is correlated with polaron hopping between $Fe^{3+}\;and\;Fe^{4+}$ ions. The electrical resistivity displayed thermally activated temperature dependence above 200 K with an activation energy of 0.16 eV. In addition, the temperature dependence of thermoelectric power and resistivity suggests that the charge carrier responsible for conduction is strongly localized.