• 폴리머
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• 제25권5호
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• pp.719-727
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• 2001

유기광도전체에 있어서의 액정은 종래의 분자 배향성을 가지지 않는 비정성 고체계와는 달리 분자 배향성을 가지기 때문에 분자 사이의 질서도가 높아지게 되고, charge-carrier의 hopping을 방해하는 hopping site의 공간적인 틈이 작아져 고 이동도의 특성을 가질수 있다. 본 연구에서는 유기광도전체의 전하 수송층에 액정5CT를 혼합하여, charge-carrier수송특성에 있어서의 액정5CT의 영향을 관찰하였다. 액정5CT를 함유한 유기광도전체는 액정의 혼합비가 증가함에 따가 초기전위는 증가하였으며, 암감쇄는 감소하는 경향을 나타내었다. 감도는 5CT를 TNF와 OXD 각자에 대하여 40 wt%로 혼합한 시료의 경우에 가장 우수하게 나타났다. 형광거동을 관찰한 결과, 이는 전하수송재료와 액정5CT의 전하 수송착체에 의한 것으로, 액정5CT를 TNF와 OXD 각각에 대하여 40 wt%로 혼합한 시료의 경우가 다른 시료에 비해 전하 수송착체가 가장 잘 형성되어, 성공을 잘 수송하기 때문으로 나타났다.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2001년도 추계학술대회 논문집
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• pp.497-500
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• 2001

Due to their better photosensitivity in X-ray, the amorphous selenium based photoreceptor is widely used on the X-ray conversion materials. It was possible to control the charge carrier transport of amorphous selenium by suitably alloying a-Se with other elements(e,g. As, Cl). The charge transport properties of amorphous Selenium is decided on hole which is induced from metal to selenium in metal-selenium junction and which is transferred in a-Se bulk. This phenomenon is resulted of changing electric field owing to increasing of space charge by deep trap of a-Se bulk. In this paper, We dopped the chlorine to compensate deep hole trap and deposited blocking layer using dielectric material to prevent from increasing space charge for injection charge between metal electrode and a-Se layer. We compared space charge and the decreasing of trap density through measuring dark and photo current.

• Transactions on Electrical and Electronic Materials
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• 제16권3호
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• pp.107-111
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• 2015

Our work is based on the development of a numerical model to develop a methodology for predicting the aging and breakdown in insulation due to the dynamics of space charge packets. The model of bipolar charge transports is proposed to simulate space charge dynamic for high DC voltage in law-density polyethylene (LDPE), taking into account the trapping and detrapping of recombination phenomena, this model has been developed and experimentally validation. Theoretical formulation of the physical problem is based on the Poisson, the continuity and the transport equations as well as on the appropriate models for injection. Numerical results provide temporal and local distributions of the electric field, the space charge density for the different kinds of charges, conduction and displacement current densities, and the external current.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2008년도 추계학술대회 논문집 전기설비전문위원
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• pp.229-230
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• 2008

The investigations included the measurements of volume currents and also internal space charges on epoxy samples of mm thicknesses. The current versus time relations were shown to correspond well with classical forms of dielectric response such as the Curie-von Schweidler model. After the time transient, near steady currents were extremely small and exhibited a significant temperature dependence, similar in relation to the Poole-Frenkel hoping transport model. Equivalent resistances were on the order of $10^{19}$ ohms and represent very weak charge transport. Electrically stimulated acoustic waves were used to quantify the small internal charges that would accumulate within the epoxy. There was a notable homocharge near both anode and cathode. The dielectric response and the internal charge were related to show a consistent model for charge transport within unfilled epoxy.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2008년도 제39회 하계학술대회
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• pp.2311-2312
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• 2008

The investigations included the measurements of volume currents and also internal space charges on epoxy samples of mm thicknesses. The current versus time relations were shown to correspond well with classical forms of dielectric response such as the Curie-von Schweidler model. After the time transient, near steady currents were extremely small and exhibited a significant temperature dependence, similar in relation to the Poole-Frenkel hoping transport model. Equivalent resistances were on the order of 1019 ohms and represent very weak charge transport. Electrically stimulated acoustic waves were used to quantify the small internal charges that would accumulate within the epoxy. There was a notable homocharge near both anode and cathode. The dielectric response and the internal charge were related to show a consistent model for charge transport within unfilled epoxy.

• 대한전기학회논문지:전기물성ㆍ응용부문C
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• 제53권6호
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• pp.305-311
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• 2004

Charge transport phenomena of polyaniline-DBSA/High Impact Polystyrene (PAM-DBSA/HIPS) blends have been studied through an examination of electrical conduction. HIPS used host polymer in the blends and PANI-DBSA obey a space charge limited conduction mechanism and a ohmic conduction mechanism respectively. However, PANI-DBSA/HIPS blends do not obey any classical conduction mechanism. Analysis of conduction mechanism revealed that the charging current of PANI-DBSA/HIPS blends increased with the increase of PANI-DBSA content. This result migrlt be explained by the reduction in the distance between PANI-DBSA particles enabling the charge carriers to migrate from a chain to a neighboring chain via hopping or micro tunneling. It was also found that the charging current of PANI-DBSA/HIPS blends decreased as the temperature was elevated, which is of typical phenomena in metals. It is speculated that the charge transport in PANI-DBSA particle was somewhat constrained due to strong phonon scattering.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2001년도 추계학술대회 논문집 Vol.14 No.1
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• pp.497-500
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• 2001

Due to their better photosensitivity in X-ray, the amorphous selenium based photoreceptor is widely used on the X-ray conversion materials. It was possible to control the charge carrier transport of amorphous selenium by suitably alloying a-Se with other elements(e.g. As, Cl). The charge transport properties of amorphous Selenium is decided on hole which is induced from metal to selenium in metal-selenium junction and which is transferred in a-Se bulk. This phenomenon is resulted of changing electric field owing to increasing of space charge by deep trap of a-Se bulk. In this paper, We dopped the chlorine to compensate deep hole trap and deposited blocking layer using dielectric material to prevent from increasing space charge for injection charge between metal electrode and a-Se layer. We compared space charge and the decreasing of trap density through measuring dark and photo current. 缀Ѐ㘰〻ሀ䝥湥牡氠瑥捨湯汯杹

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2001년도 추계학술대회 논문집 Vol.14 No.1
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• pp.501-504
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• 2001

We used time-of-flight method to analyze transport properties of charge carrier which is produced by X-ray exposure. It is the research of charge transport and specific property of trap that is performed in direct digital x-ray image receptor. But the results shows us different measurement value of electron and charge drift mobility and it is difficult to precise analysis about charge transport properties and trap mechanism. We measured transit time and drift mobility of charge carriers using time-of-flight method to evaluate the correlation of a-Se thickness change and electric field. We made a testing glass with a-Se of 400 ${\mu}m$ thickness on coming glass using thermoevaporation method and built Au electrode with 300nm, $2{\varphi}$ on both sides of a-Se, As a result of this experiment, electron and hole transit time was each $229.17{\mu}s$ and $8.73{\mu}s$ at $10V/{\mu}m$ electric field and Drift mobility was each $0.00174 cm^{2}/V{\cdot}s$, $0.04584cm^{2}/V{\cdot}s$.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2001년도 추계학술대회 논문집
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• pp.501-504
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• 2001

We used time-of-flight method to analyse transport properties of charge carrier which is produced by X-ray exposure. It is the research of charge transport and specific property of trap that is performed in direct digital x-ray image receptor. But the results shows us different measurement value of electron and charge drift mobility and it is difficult to precise analysis about charge transport properties and trap mechanism. We measured transit time and drift mobility of charge carriers using time-of-fight method to evaluate the correlation of a-Se thickness change and electric field. We made a testing glass with a-Se of 470 ${\mu}{\textrm}{m}$ thickness on corning glass using thermoevaporation method and built Au electrode with 300nm, 2$\phi$ on both sides of a-Se. As a result of this experiment, electron and hole transit time was each 229.17 $\mu$s and 8.737 $\mu$s at 10V/${\mu}{\textrm}{m}$ electric field and Drift mobility was each 0.00174 $\textrm{cm}^2$/V.s, 0.04584 $\textrm{cm}^2$/V.s.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2006년도 제37회 하계학술대회 논문집 C
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• pp.1494-1495
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• 2006

A complete finite element analysis method for discharge onset process, which is governed and coupled by charge transport equation and electric field equation, was presented. The charge transport equation of first order was transformed into a second-order one by utilizing the artificial diffusion scheme. The two second-order equations were analyzed by the finite element formulation which is well-developed for second-order ones. The Fowler-Nordheim injection boundary condition was adopted for charge transport equation. After verifying the numerical results by comparing to the analytic solutions using parallel plane electrodes with one carrier system, we extended the result to blade-plane electrodes in 2D xy geometry with three carriers system. Radius of the sharp tip was taken to be 50 ${\mu}m$. When this sharp geometry was solved by utilizing the space discretizing methods, the very sharp tip was found to cause a singularity in electric field and space charge distribution around the tip. To avoid these numerical difficulties in the FEM, finer meshes, a higher order shape function, and artificial diffusion scheme were employed.