• 제목/요약/키워드: charge storage

검색결과 551건 처리시간 0.037초

산업용 센서에 사용하는 Teflon계 박막 일렉트렛의 내열성 향상에 관한 연구 (A Study on the Way to Increase Heat Resistance of Teflon Type Thin Film Electret Applied for Industrial Sensor)

  • 김병수;이덕출
    • 한국안전학회지
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    • 제18권3호
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    • pp.60-63
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    • 2003
  • For the increase the charge stability of teflon electrets for used at uncomfortable industrial circumstances with high temperature or humidity, We made an investigation into double layer effect of teflon electrets. Teflon AF film was spincoated on FEP film and then the charge storage property of AF/FEP dual film was investigated to be compared with FEP film. It was found that the AF/FEP dual film has higher surface potential than FEP film on the repeated charging and annealing process. It seems that AF/FEP dual film has higher thermal stability than FEP film through TSC measurement. If the investigations of the double layer effect of Teflon film carried out more closely with it's molecular structures and surface conditions, it may be effectively improved the stability of charge storage.

$Teflon^{(R)}FEP$ film을 사용한 전하보존특성 향상에 관한 연구 (A study on Improvement of Electric charge storage characteristics using $Teflon^{(R)}FEP$ film)

  • 김성준;이현석;권정열;김지균;이헌용
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2006년도 하계학술대회 논문집 Vol.7
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    • pp.539-540
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    • 2006
  • In this paper, We examine that characteristics of formative electret with polymer film and electric charge storage using grid corona discharge. compound polymer of fluorine resin used for material in electret because of high electric charge accumulation, excellent electrical and physical characteristic. All experiments were carried out with circular samples of $Teflon^(R)FEP$ film, 12.5[${\mu}m$] thick. As experiment variables, we used voltage, electrode thickness, discharge electrode gap, and discharge time. According to this variables, we studied on characteristics of formative electret and electric charge storage. Additionally we make a comparative study of the result between the grid corona discharge and needle electrode discharge.

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에너지저장시스템의 충, 방전 Auto Level-Tuning 알고리즘에 관한 연구 (Study for Charge-Discharge Auto Level-Tuning Algorithm of Energy storage system)

  • 백승길;임지영;차준일;김길동;권경민
    • 한국철도학회:학술대회논문집
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    • 한국철도학회 2010년도 춘계학술대회 논문집
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    • pp.514-520
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    • 2010
  • This paper is about control algorithms that bi-direction DC-DC Converter using Super Capacitor and regenerative power from DC feeding system in train. In order to take advantage of regenerative energy efficient, charge and discharge level value of energy storage system serve as an important factor. Respect to output fluctuations of the substation and catenary voltage changing, we offers Charge-Discharge Auto Level Tuning Algorithms to improve system following of Energy Storage System.

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Increasing P/E Speed and Memory Window by Using Si-rich SiOx for Charge Storage Layer to Apply for Non-volatile Memory Devices

  • 김태용;;김지웅;이준신
    • 한국진공학회:학술대회논문집
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    • 한국진공학회 2014년도 제46회 동계 정기학술대회 초록집
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    • pp.254.2-254.2
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    • 2014
  • The Transmission Fourier Transform Infrared spectroscopy (FTIR) of SiOx charge storage layer with the richest silicon content showed an assignment at peaks around 2000~2300 cm-1. It indicated that the existence of many silicon phases and defect sources in the matrix of the SiOx films. The total hysteresis width is the sum of the flat band voltage shift (${\Delta}VFB$) due to electron and hole charging. At the range voltage sweep of ${\pm}15V$, the ${\Delta}VFB$ values increase of 0.57 V, 1.71 V, and 13.56 V with 1/2, 2/1, and 6/1 samples, respectively. When we increase the gas ratio of SiH4/N2O, a lot of defects appeared in charge storage layer, more electrons and holes are charged and the memory window also increases. The best retention are obtained at sample with the ratio SiH4/N2O=6/1 with 82.31% (3.49V) after 103s and 70.75% after 10 years. The high charge storage in 6/1 device could arise from the large amount of silicon phases and defect sources in the storage material with SiOx material. Therefore, in the programming/erasing (P/E) process, the Si-rich SiOx charge-trapping layer with SiH4/N2O gas flow ratio=6/1 easily grasps electrons and holds them, and hence, increases the P/E speed and the memory window. This is very useful for a trapping layer, especially in the low-voltage operation of non-volatile memory devices.

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Optimal Energy Shift Scheduling Algorithm for Energy Storage Considering Efficiency Model

  • Cho, Sung-Min
    • Journal of Electrical Engineering and Technology
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    • 제13권5호
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    • pp.1864-1873
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    • 2018
  • Energy shifting is an innovative method used to obtain the highest profit from the operation of energy storage systems (ESS) by controlling the charge and discharge schedules according to the electricity prices in a given period. Therefore, in this study, we propose an optimal charge and discharge scheduling method that performs energy shift operations derived from an ESS efficiency model. The efficiency model reflects the construction of power conversion systems (PCSs) and lithium battery systems (LBSs) according to the rated discharge time of a MWh-scale ESS. The PCS model was based on measurement data from a real system, whereas for the LBS, we used a circuit model that is appropriate for the MWh scale. In addition, this paper presents the application of a genetic algorithm to obtain the optimal charge and discharge schedules. This development represents a novel evolutionary computation method and aims to find an optimal solution that does not modify the total energy volume for the scheduling process. This optimal charge and discharge scheduling method was verified by various case studies, while the model was used to realize a higher profit than that realized using other scheduling methods.

THE OPEN-CIRCUIT VOLTAGE STATE ESTIMATION OF THE BATTERY

  • LEE, SHINWON
    • Journal of applied mathematics & informatics
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    • 제39권5_6호
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    • pp.805-811
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    • 2021
  • Currently, batteries use commonly as energy sources for mobile electric devices. Due to the high density of energy, the energy storage state of a battery is very important information. To know the battery's energy storage state, it is necessary to find out the open state voltage of the battery. The open state voltage calculates with a mathematical model, but the computation of the real time state is complicated and requires many calculations. Therefore, the state observer designs to estimate in real time the battery open-circuit voltage as disturbance including model error. Using the estimated open voltage and applying it to the state estimation algorithm, we can estimate the charge. In this study, we first estimate the open-circuit voltage and design an estimation algorithm for estimating the state of battery charge. This includes errors in the system model and has a robust characteristic to noise. It is possible to increase the precision of the charge state estimation.

단일캡슐 축방냉성능을 이용한 캡슐형 빙축열조 모델 (Model of Encapsulated Ice 510 Storage Tanks Using Charge and Discharge Performance of Single Ice Capsule)

  • 이경호;주용진;최병윤;김상준
    • 설비공학논문집
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    • 제12권4호
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    • pp.337-344
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    • 2000
  • The present study describes a one-dimensional modeling of encapsulated ice storage tanks. The thermal transmittance of capsules in this model uses the results from the Arnold's experimental $study^{(2-3)}$.In this model, ice storage tank is partitioned by several control volumes for the analysis, each having same number of capsules. The model is validated by the comparison of the measured data from an ice storage tank installed at a building with the capacity of 1200 ton-hrs and the simulated results with the same inlet brine temperature conditions into the tank.

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A New Sustain Driving Method for AC PDP : Charge-Controlled Driving Method

  • Kim, Joon-Yub
    • KIEE International Transactions on Electrophysics and Applications
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    • 제2C권6호
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    • pp.292-296
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    • 2002
  • A new sustain driving method for the AC PDP is presented. In this driving method, the voltage source is connected to a storage capacitor, this storage capacitor charges an intermediate capacitor through LC resonance, and the panel is charged from the intermediate capacitor indirectly. In this way, the current flowing into the AC PDP when the sustain discharge occurs is reduced because the current is indirectly supplied from a capacitor, a limited source of charge. Thus, the input power to the output luminance efficiency is improved. Since the voltage supplied to the storage capacitor is doubled through LC resonance, this method call drive an AC PDP with a voltage source of about half of the voltage necessary in the conventional driving methods. The experiments showed that this charge-controlled driving method could drive ail AC PDP with a voltage source of as low as 107V. Using a panel of the conventional structure, luminous efficiency of 1.28 lm/W was achieved.

Charge Spreading Effect of Stored Charge on Retention Characteristics in SONOS NAND Flash Memory Devices

  • Kim, Seong-Hyeon;Yang, Seung-Dong;Kim, Jin-Seop;Jeong, Jun-Kyo;Lee, Hi-Deok;Lee, Ga-Won
    • Transactions on Electrical and Electronic Materials
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    • 제16권4호
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    • pp.183-186
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    • 2015
  • This research investigates the impact of charge spreading on the data retention of three-dimensional (3D) silicon-oxide-nitride-oxide-silicon (SONOS) flash memory where the charge trapping layer is shared along the cell string. In order to do so, this study conducts an electrical analysis of the planar SONOS test pattern where the silicon nitride charge storage layer is not isolated but extends beyond the gate electrode. Experimental results from the test pattern show larger retention loss in the devices with extended storage layers compared to isolated devices. This retention degradation is thought to be the result of an additional charge spreading through the extended silicon nitride layer along the width of the memory cell, which should be improved for the successful 3-D application of SONOS flash devices.