• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.34 no.2
• /
• pp.99-104
• /
• 2021

Ion-beam sputtering (IBS) was used to deposit semiconducting IZTO (indium zinc tin oxide) thin films onto heavily-doped Si substrates using a sintered ceramic target with the nominal composition In0.4Zn0.5Sn0.1O1.5, which could work as a channel layer for oxide TFT (oxide thin film transistor) devices. The crystallization behavior and electrical properties were examined for the films in terms of deposition parameters, i.e. target tilt angle and substrate temperature during deposition. The thickness uniformity of the films were examined using a stylus profilometer. The observed difference in electrical properties was not related to the degree of crystallization but to the deposition temperature which affected charge carrier concentration (n), electrical resistivity (ρ), sheet resistance (Rs), and Hall mobility (μH) values of the films.

• Journal of Sensor Science and Technology
• /
• v.31 no.6
• /
• pp.383-388
• /
• 2022

Currently, photodetectors are being extensively studied and developed for next-generation applications, such as in autonomous vehicles and image sensors. In this regard, all-inorganic metal halide perovskite (CsPbX₃; X = Cl, Br, and I) nanocrystals (NCs) have emerged as promising building blocks for various applications owing to their high absorption coefficients, tunable bandgaps, high defect tolerances, and solution processability. These features, which are typically required for the development of advanced optoelectronics, can be engineered by modifying the chemical compositions and surface chemistry of the NCs. Herein, we briefly review various strategies adopted for the application of CsPbX₃ perovskite NCs in photodetectors and for improving device performance. First, modifications of the chemical compositions of CsPbX₃ NCs to tune their optical bandgaps and improve the charge-transport mechanism are discussed. Second, the application of surface chemistry to improve oxidation resistance and carrier mobility is described. In the future, perovskite NCs with prospective features, such as non-toxicity and high resistance to external stimuli, are expected to be developed for practical applications.

• Korean Chemical Engineering Research
• /
• v.47 no.4
• /
• pp.418-423
• /
• 2009

MWCNT(multi-wall carbon nanotube)-doped PEDOT:PSS(poly(3,4-ethylenedioxythiophene):poly(styrene sulfonate)), used as a HIL(hole injection layer) material in OLEDs(organic light emitting diodes), was spin-coated on to the ITO glass to form PEDOT:PSS-MWCNT nano composite thin film. Morphology and transparency characteristics of nano composite thin films with respect to the loading percent of MWCNT have been investigated using FT-IR, UV-Vis and SEM. Furthermore, ITO/PEDOT:PSS-MWCNT/NPD/$Alq_3$/Al devices were fabricated, and then J-V and L-V characteristics were investigated. Functional group-incorporated MWCNT was prepared by acid treatment and showed good dispersion property in PEDOT:PSS solution. PEDOT:PSS-MWCNT thin films possessed good transparency property. For multi-layered devices, it was shown that as the loading percent of MWCNT increased, the current density increased but the luminance dramatically decreased. It might be conclusively suggested that the enhanced charge mobility by MWCNT could increase the current density but the hole trapping property of MWCNT could dramatically decrease the hole mobility in the current devices.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2014.02a
• /
• pp.344-344
• /
• 2014

Transparent amorphous oxide semiconductors such as a In-Ga-Zn-O (a-IGZO) have advantages for large area electronic devices; e.g., uniform deposition at a large area, optical transparency, a smooth surface, and large electron mobility >10 cm2/Vs, which is more than an order of magnitude larger than that of hydrogen amorphous silicon (a-Si;H).1) Thin film transistors (TFTs) that employ amorphous oxide semiconductors such as ZnO, In-Ga-Zn-O, or Hf-In-Zn-O (HIZO) are currently subject of intensive study owing to their high potential for application in flat panel displays. The device fabrication process involves a series of thin film deposition and photolithographic patterning steps. In order to minimize contamination, the substrates usually undergo a cleaning procedure using deionized water, before and after the growth of thin films by sputtering methods. The devices structure were fabricated top-contact gate TFTs using the a-IGZO films on the plastic substrates. The channel width and length were 80 and 20 um, respectively. The source and drain electrode regions were defined by photolithography and wet etching process. The electrodes consisting of Ti(15 nm)/Al(120 nm)/Ti(15nm) trilayers were deposited by direct current sputtering. The 30 nm thickness active IGZO layer deposited by rf magnetron sputtering at room temperature. The deposition condition is as follows: a rf power 200 W, a pressure of 5 mtorr, 10% of oxygen [O2/(O2+Ar)=0.1], and room temperature. A 9-nm-thick Al2O3 layer was formed as a first, third gate insulator by ALD deposition. A 290-nm-thick SS6908 organic dielectrics formed as second gate insulator by spin-coating. The schematic structure of the IGZO TFT is top gate contact geometry device structure for typical TFTs fabricated in this study. Drain current (IDS) versus drain-source voltage (VDS) output characteristics curve of a IGZO TFTs fabricated using the 3-layer gate insulator on a plastic substrate and log(IDS)-gate voltage (VG) characteristics for typical IGZO TFTs. The TFTs device has a channel width (W) of $80{\mu}m$ and a channel length (L) of $20{\mu}m$. The IDS-VDS curves showed well-defined transistor characteristics with saturation effects at VG>-10 V and VDS>-20 V for the inkjet printing IGZO device. The carrier charge mobility was determined to be 15.18 cm^2 V-1s-1 with FET threshold voltage of -3 V and on/off current ratio 10^9.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2009.11a
• /
• pp.55-55
• /
• 2009

Silicon Carbide (SiC) is a material with a wide bandgap (3.26eV), a high critical electric field (~2.3MV/cm), a and a high bulk electron mobility (${\sim}900cm^2/Vs$). These electronic properties allow high breakdown voltage, high frequency, and high temperature operation compared to Silicon devices. Although various SiC DMOSFET structures have been reported so far for optimizing performances. the effect of channel dimension on the switching performance of SiC DMOSFETs has not been extensively examined. In this paper, we report the effect of the interface states ($Q_s$) on the transient characteristics of SiC DMOSFETs. The key design parameters for SiC DMOSFETs have been optimized and a physics-based two-dimensional (2-D) mixed device and circuit simulator by Silvaco Inc. has been used to understand the relationship with the switching characteristics. To investigate transient characteristic of the device, mixed-mode simulation has been performed, where the solution of the basic transport equations for the 2-D device structures is directly embedded into the solution procedure for the circuit equations. The result is a low-loss transient characteristic at low $Q_s$. Based on the simulation results, the DMOSFETs exhibit the turn-on time of 10ns at short channel and 9ns at without the interface charges. By reducing $SiO_2/SiC$ interface charge, power losses and switching time also decreases, primarily due to the lowered channel mobilities. As high density interface states can result in increased carrier trapping, or recombination centers or scattering sites. Therefore, the quality of $SiO_2/SiC$ interfaces is important for both static and transient properties of SiC MOSFET devices.

• Journal of radiological science and technology
• /
• v.37 no.4
• /
• pp.253-259
• /
• 2014

Large volume of $6{\times}6{\times}12mm^3$ CdZnTe ${\gamma}$-ray detector was fabricated with CdZnTe single crystals grown by Traveling Heater Method (THM) to evaluate the energy resolution of 662 keV in $^{137}Cs$. Hole tailing effect which originated from the large mobility difference in electron and hole degrade energy resolution of radiation detector and its effects become more severe for a large volume detectors. Generally, single carrier collection technique is very useful method to remove/minimize hole tailing effect and thereby improvement in energy resolution. Virtual Frisch-grid technique is also one of single charge collection method through weighting potential engineering and it is very simple and easily applicable one. In this paper, we characterized CZT detector grown by THM and evaluated the effectiveness of virtual Frisch-grid technique for a high energy gamma-ray detector. The proper position and width of virtual Frisch-grid was determined from electric field simulation using ANSYS Maxwell ver. 14.0. Energy resolution of 2.2% was achieved for the 662 keV ${\gamma}$-peak of $^{137}Cs$ with virtual Frisch-grid CdZnTe detector.

• Korean Journal of Soil Science and Fertilizer
• /
• v.31 no.4
• /
• pp.407-413
• /
• 1998

The influence of the anion composition of simulated acid rain on cation leaching of two soils with different surface charge properties was examined. Four mixtures of mole ratio of $SO_4:NO_3$(1:0, 2:1, 1:1, 0:1) with pH 2.0 simulated acid rain were applied to an Inceptisols(Gyuam series) and Andisols(Pyeongdae series). The Andisols had higher $SO_4{^{2-}}$ adsorption capacity than the Inceptisols because of its higher point of zero charge(PZC, pH 6.5) than Inceptisols(PZC pH 3.1). Cation leaching in Andisols varied directly with the $NO_3$ content of the leaching input due to higher mobility of $NO_3$ compared with $SO_4$ that was absorbed. The pH of the Andisols was higher with the addition of $Na_2SO_4$ than the addition of $NaNO_3$ indicating that this soil behaves as a base and has a high $SO_4$ adsorption capacity. The relative $NO_3{^-}/SO_4{^{2-}}$ content input had no effect on cation leaching of the Inceptisols. Amounts of leaching on the Andisols by simulated acid rain were higher than Inceptisols. This experiment explained that anion composition of acid rain plays a significant role in the cation leaching of soils which are able to adsorb $SO_4$.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2010.02a
• /
• pp.59-59
• /
• 2010

Graphene is a 2-D sheet of $sp^2$-bonded carbon arranged in a honeycomb lattice. This material has attracted major interest, and there are many ongoing efforts in developing graphene devices because of its high charge mobility and crystal quality. Therefore clear understanding of the substrate effect and mechanism of synthesis of graphene is important for potential applications and device fabrication of graphene. In a published paper in J. Phys. Chem. C (2008), the effect of substrate on the atomic/electronic structures of graphene is negligible for graphene made by mechanical cleavage. However, nobody shows the interaction between Ni substrate and graphene. Therefore, we have studied this interaction. In order to studying these effect between graphene and Ni substrate, We have observed graphene synthesized on Ni substrate and graphene transferred on $SiO_2$/Si substrate through Raman spectroscopy. Because Raman spectroscopy has historically been used to probe structural and electronic characteristics of graphite materials, providing useful information on the defects (D-band), in-plane vibration of sp2 carbon atoms (G-band), as well as the stacking orders (2D-band), we selected this as analysis tool. In our study, we could not observe the doping effect between graphene and Ni substrate or between graphene and $SiO_2$/Si substrate because the shift of G band in Raman spectrum was not occurred by charge transfer. We could noticed that the bonding force between graphene and Ni substrate is more strong than Van de Waals force which is the interaction between graphene and $SiO_2$/Si. Furthermore, the synthesized graphene on Ni substrate was in compressive strain. This phenomenon was observed by 2D band blue-shift in Raman spectrum. And, we consider that the graphene is incommensurate growth with Ni polycrystalline substrate.

• Composites Research
• /
• v.36 no.5
• /
• pp.349-354
• /
• 2023

Poly(3-hexylthiophene) (P3HT) is a conjugated polymer that is highly soluble in organic solvents and is readily available. However, its electrical properties as an active channel in electronic devices are not enough for practical applications, necessitating further improvement in the properties. In this study, we demonstrate that the blending of two P3HT polymers (i.e., regio-regular (RR) P3HT and regio-random (RRa) P3HT) with different regioregularities can significantly improve charge transport characteristics of the blend films. The morphological and electrical properties of the blend films were systematically investigated by varying the ratio between two P3HT polymers. Atomic force microscopy (AFM), X-ray diffraction (XRD), and UV-visible absorption spectroscopy (UV-vis) were employed to evaluate the morphological and optoelectronic properties of the blend films. The crystallinity of the blend films increased with increasing the content of RRa-P3HT to 20 wt% and gradually decreased as the content increased to 80%. Consistently, the highest charge carrier mobility was obtained from the blend films containing 20 wt% RRa-P3HT, which value was measured to be 0.029 cm²/V·s. The values gradually decreased to 0.0007 cm²/V·s with increasing the content of RRa-P3HT to 80 wt%.

• Journal of the Korea Institute of Information and Communication Engineering
• /
• v.14 no.3
• /
• pp.669-677
• /
• 2010

In this paper, we propose a novel project schedule notification and issue tracking system based on a social networking service for project management on a smartphone. The proposed system has a server subsystem and a client subsystem. The server is in charge of enabling a deadline notification and an issue tracking of the project to project participants by exploiting a legacy social networking service. The client running on a smartphone displays timelines of the project schedule using Gantt chart and let the project participant edit their schedule. The proposed system combines the mobility of smartphones and the connectivity of social networking services and apply them to schedule notification and issue tracking, which demonstrates a novel usage of social networking services.