• Journal of Radiation Protection and Research
• /
• v.41 no.2
• /
• pp.81-86
• /
• 2016

Background: For positron emission tomography (PET) application, cadmium zinc telluride (CZT) has been investigated by several institutes to replace detectors from a conventional system using photomultipliers or Silicon-photomultipliers (SiPMs). The spatial and energy resolution in using CZT can be superior to current scintillator-based state-of-the-art PET detectors. CZT has been under development for several years at the Korea Atomic Energy Research Institute (KAERI) to provide a high performance gamma ray detection, which needs a single crystallinity, a good uniformity, a high stopping power, and a wide band gap. Materials and Methods: Before applying our own grown CZT detectors in the prototype PET system, we investigated preliminary research with a developed discrete type data acquisition (DAQ) system for coincident events at 128 anode pixels and two common cathodes of two CZT detectors from Redlen. Each detector has a $19.4{\times}19.4{\times}6mm^3$ volume size with a 2.2 mm anode pixel pitch. Discrete amplifiers consist of a preamplifier with a gain of $8mV{\cdot}fC^{-1}$ and noise of 55 equivalent noise charge (ENC), a $CR-RC^4$ shaping amplifier with a $5{\mu}s$ peak time, and an analog-to-digital converter (ADC) driver. The DAQ system has 65 mega-sample per second flash ADC, a self and external trigger, and a USB 3.0 interface. Results and Discussion: Characteristics such as the current-to-voltage curve, energy resolution, and electron mobility life-time products for CZT detectors are investigated. In addition, preliminary results of gamma ray imaging using 511 keV of a $^{22}Na$ gamma ray source were obtained. Conclusion: In this study, the DAQ system with a CZT radiation sensor was successfully developed and a PET image was acquired by two sets of the developed DAQ system.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2004.11a
• /
• pp.456-459
• /
• 2004

Analog film/screen systems have been being changed to a digital x-ray imaging device using direct conversion materials. Photocoductors for a direct detection flat-panel imager require high x-ray absorption, ionization and charge collection, low leakage current and large area deposition. In this work, $HgI_2$ films with excellent properties for x-ray detector were deposited by screen printing method. The thickness of $HgI_2$ film was about $150\;{\mu}m$. The passivation layer is fabricated using a-Se and parlyene, the both fabrication $HgI_2$ film were compared for analyzing the leakage current reduction. We measured electrical properties-leakage current, photosensitivity, SNR though I-V measurement, As the result, $HgI_2$ film using a-Se passivation layer had the greater

• Journal of Sensor Science and Technology
• /
• v.13 no.2
• /
• pp.128-132
• /
• 2004

Short wave infrared (SWIR) photovoltaic devices have been fabricated from metal organic vapour phase epitaxy (MOVPE) grown n- on p- HgCdTe films on GaAs substrates. The MOVPE grown films were processed into mesa type discrete devices with wet chemical etching employed for meas delineation and ZnS surface passivatlon. ZnS was thermally evaporated from effusion cell in an ultra high vacuum (UHV) chamber. The main features of the ZnS deposited from effusion cell in UHV chamber are low fixed surface charge density, and small hysteresis. It was found that a negative flat band voltage with -0.6 V has been obtained for Metal Insulator Semiconductor (MIS) capacitor which was evaporated at $910^{\circ}C$ for 90 min. Current-Voltage (I-V) and temperature dependence of the I-V characteristics were measured in the temperature range 80 - 300 K. The Zero bias dynamic resistance-area product ($R_{0}A$) was about $7500{\Omega}-cm^{2}$ at room temperature. The physical mechanisms that dominate dark current properties in the HgCdTe photodiodes are examined by the dependence of the $R_{0}A$ product upon reciprocal temperature. From theoretical considerations and known current expressions for thermal and tunnelling process, the device is shown to be diffusion limited up to 180 K and g-r limited at temperature below this.

• Journal of the Korea Academia-Industrial cooperation Society
• /
• v.10 no.9
• /
• pp.2227-2235
• /
• 2009

This paper describes the system configuration and measured performances of a wireless power transmission system which utilizes microwave. The technically final target of this system is to provide DC power to various mobile terminals within limited spaces such as buildings, conference rooms, and so on. The prototype system is built using in-house designed and fabricated circuits such as microwave oscillator, high power amplifier, microstrip patch antenna, low pass filter, and detector/rectifier. The fixed RF power of 29.3dBm at 2.4GHz is produced from the high power amplifier and transmitted through the transmitting antenna, while the received RF power at the receiving antenna is transformed into DC power through the detector/rectifier. The measured change of DC voltage according to the distance between transmitting and receiving antenna is described.

• Nuclear Engineering and Technology
• /
• v.51 no.3
• /
• pp.731-737
• /
• 2019

In this study, a new measurement method based on voltage transients in CdZnTe detectors response to low energy photon irradiations is applied to measure the electron mobility (${\mu}_e$) and electron mobility-lifetime product $({\mu}{\tau})_e$ in a CdZnTe detector. In the proposed method, the pulse rise times are derived from low energy photon response to 59.5 keV($^{241}Am$), 88 keV($^{109}Cd$) and 122 keV($^{57}Co$) ${\gamma}-rays$ for the irradiation of the cathode surface at each detector for different bias voltages. The electron $({\mu}{\tau})_e$ product was then determined by measuring the variation in the photopeak amplitude as a function of bias voltage at a given photon energy using a pulse-height analyzer. The $({\mu}{\tau})_e$ values were found to be $(9.6{\pm}1.4){\times}10^{-3}cm^2V^{-1}$ for $1000mm^3$, $(8.4{\pm}1.6){\times}10^{-3}cm^2V^{-1}$ for $1687.5mm^3$ and $(7.6{\pm}1.1){\times}10^{-3}cm^2V^{-1}$ for $2250mm^3$ CdZnTe detectors. Those results were then compared with the literature $({\mu}{\tau})_e$ values for CdZnTe detectors. The present results indicate that, the electron mobility ${\mu}_e$ and electron $({\mu}{\tau})_e$ values in CdZnTe detectors can be measured easily by applying voltage transients response to low energy photons, utilizing a fast signal acquisition and data reduction and evaluation.

• Nuclear Engineering and Technology
• /
• v.54 no.6
• /
• pp.2023-2030
• /
• 2022

A novel pulse fitting analysis (PFA) method is presented for the acquisition of nuclear spectra. The charging process of the feedback capacitor in the resistive feedback charge-sensitive preamplifier is equivalent to the impulsive pulse, and its impulse response function (IRF) can be obtained by non-linear fitting of the falling edge of the nuclear pulse. The integral of the IRF excluding the baseline represents the energy deposition of the particles in the detector. In addition, since the non-linear fitting process in PFA method is difficult to achieve in the conventional architecture of spectroscopy system, a new multi-channel analyzer (MCA) based on Zynq SoC is proposed, which transmits all the data of nuclear pulses from the programmable logic (PL) to the processing system (PS) by high-speed AXI-Stream in order to implement PFA method with precision. The linearity of new MCA has been tested. The spectrum of ¹³⁷Cs was obtained using LaBr₃(Ce) scintillator detector, and was compared with commercial MCA by ORTEC. The results of tests indicate that the MCA based on PFA method has the same performance as the commercial MCA based on pulse height analysis (PHA) method and excellent linearity for γ-rays with different energies, which infers that PFA method is an effective and promising method for the acquisition of spectra. Furthermore, it provides a new solution for nuclear pulse processing algorithms involving regression and iterative processes.

• Nuclear Engineering and Technology
• /
• v.56 no.2
• /
• pp.745-752
• /
• 2024

A method for gamma/neutron event classification based on frequency-domain analysis for mixed radiation environments is proposed. In contrast to the traditional charge comparison method for pulse-shape discrimination, which requires baseline removal and pulse alignment, our method does not need any preprocessing of the digitized data, apart from removing saturated traces in sporadic pile-up scenarios. It also features the identification of neutron events in the detector's full energy range with a single device, from thermal neutrons to fast neutrons, including low-energy pulses, and still provides a superior figure-of-merit for classification. The proposed frequency-domain analysis consists of computing the fast Fourier transform of a triggered trace and integrating it through a simplified version of the transform magnitude components that distinguish the neutron features from those of the gamma photons. Owing to this simplification, the proposed method may be easily ported to a real-time embedded deployment based on Field-Programmable Gate Arrays or Digital Signal Processors. We target an off-the-shelf detector based on a small CLYC (Cs2LiYCl6:Ce) crystal coupled to a silicon photomultiplier with an integrated bias and preamplifier, aiming at lightweight embedded mixed radiation monitors and dosimeter applications.

• Journal of the Institute of Electronics Engineers of Korea TC
• /
• v.42 no.7 s.337
• /
• pp.35-40
• /
• 2005

This paper proposes a fractional-N phase-locked loop (PLL) frequency synthesizer using the 3rd order ${\Delta}{\sum}$ modulator for 900MHz medium speed wireless link. The LC voltage-controlled oscillator (VCO) is used for the good phase noise property. To reduce the lock-in time, a charge pump has been developed to control the pumping current according to the frequency steps and the reference frequency is increased up to 3MHz. A 36/37 fractional-N divider is used to increase the reference frequency of the phase frequency detector (PFD) and to reduce the minimum frequency step simultaneously. A 3rd order ${\Delta}{\sum}$ modulator has been developed to reduce the fractional spur VCO, Divider by 8 Prescaler, PFD and Charge pump have been developed with 0.25um CMOS, and the fractional-N divider and the third order ${\Delta}{\sum}$ modulator have been designed with the VHDL code, and they are implemented through the FPGA board of the Xilinx Spartan2E. The measured results show that the output power of the PLL is about -lldBm and the phase noise is -77.75dBc/Hz at 100kHz offset frequency. The minimum frequency step and the maximum lock-in time are 10kHz and around 800us for the maximum frequency change of 10MHz, respectively.

• Journal of Radiation Protection and Research
• /
• v.30 no.2
• /
• pp.69-75
• /
• 2005

Gas avalanche microdetectors, such as micro-strip gas chamber (MSGC), micro-gap chamber (MGC), micro-dot chamber (MDOT), etc., are operated under high voltage to induce large electron avalanche signal around micro-size anodes. Therefore, the anodes are highly exposed to electrical damage, for example, sparking because of the interaction between high electric field strength and charge multiplication around the anodes. Gas electron multiplier (GEM) is a charge preamplifying device in which charge multiplication can be confined, so that it makes that the charge multiplication region can be separate from the readout micro-anodes in 9as avalanche microdetectors possible. Primary electron collection efficiency is an important measure for the GEM performance. We have defined that the primary electron collection efficiency is the fractional number of electron trajectories reaching to the collection plane from the drift plane through the GEM holes. The electron trajectories were estimated based on 3-dimensional (3D) finite element method (FEM). In this paper, we present the primary electron collection efficiency with respect to various GEM operation parameters. This simulation work will be very useful for the better design of the GEM.

• Journal of the Institute of Electronics Engineers of Korea SC
• /
• v.41 no.1
• /
• pp.25-32
• /
• 2004

Nowadays image processing is very useful for some field of traffic applications. The one reason is we can construct the system in a low price, the other is the improvement of hardware processing power, it can be more fast to processing the data. In traffic field, the development of image using system is interesting issue. Because it has the advantage of price of installation and it does not obstruct traffic during the installation. In this study, 1 propose the traffic monitoring system that implement on the embedded system environment. The whole system consists of two main part, one is host controller board, the other is image processing board. The part of host controller board take charge of control the total system interface of external environment, and OSD(On screen display). The part of image processing board takes charge of image input and output using video encoder and decoder, Image classification and memory control of using FPGA, control of mouse signal. And finally, for stable operation of host controller board, uC/OS-II operating system is ported on the board.