• 전기화학회지
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• 제11권2호
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• pp.100-104
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• 2008

Titanium sheet metal substrates used in thin film batteries were wet etched and their surface area was increased in order to increase the discharge capacity and power density of the batteries. To obtain a homogeneous etching pattern, we used a conventional photolithographic process. Homogeneous hemisphere-shaped wells with a diameter of approximately $40\;{\mu}m$ were formed on the surface of the Ti substrate using a photo-etching process with a $20\;{\mu}m{\times}20\;{\mu}m$ square patterned photo mask. All-solid-state thin film cells composed of a Li/Lithium phosphorous oxynitride (Lipon)/$LiCoO_2$ system were fabricated onto the wet etched substrate using a physical vapor deposition method and their performances were compared with those of the cells on a bare substrate. It was found that the discharge capacity of the cells fabricated on wet etched Ti substrate increased by ca. 25% compared to that of the cell fabricated on bare one. High discharge rate was also able to be obtained through the reduction in the internal resistance. However, the cells fabricated on the wet etched substrate exhibited a higher degradation rate with charge-discharge cycling due to the nonuniform step coverage of the thin films, while the cells on the bare substrate demonstrated a good cycling performance.

• 대한화학회지
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• 제30권5호
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• pp.488-492
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• 1986

경북 원성군 감포 78에서 산출되는 벤토나이 중 몬모리노나이트를 분리하여 Ca, Mg-형을 NaCl용액으로 처리하여 Na-형 몬모리노나이트를 만들었다. 이때 가장 적당한 조건은 0.05M NaCl용액으로 80${\circ}C$에서 24시간 반응시켜 치환되는 $Ca^{2+}$, $Mg^{2+}$량을 EDTA로 적정하여 양이온 교환 용량을 구하였다. Na-형에 $Ln^{3+}$이온용액과 같은 조건하에서 반응시켜 $Ln^{3+}$-형 몬모리노나이트를 만들었다. 치환되는 량은 $Ln^{3+}$이온들의 이온 크기에는 무관함을 알 수 있었고, X-선 회절 실험결과 순수한 몬모리노나이트를 얻을 수 있음을 밝혔고, 또한 $Ln^{3+}$형은 새로운 결정모양이 되는 것을 알 수 있었다. 이는 단순한 틈새끼우기 반응이 아니 새로운 결정형이 생성됨을 알 수 있다.

• 대한화학회지
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• 제54권1호
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• pp.93-98
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• 2010

본 연구에서는 Urea와 산 처리로 질소 및 산소 관능기가 도입된 다중벽 탄소나노튜브를 각각 제조하였으며, 표면처리에 따른 전기이중층 커패시터 (EDLCs) 특성을 관찰하였다. XPS, zeta-potential, 및 BET 분석방법을 이용하여 구조특성을 확인하였으며, 전기화학적 특성은 1 M 황산용액의 전해질에서 각각 50 $mVs^{-1}$과 100 $mVs^{-1}$의 주사속도로 순환전류 전압곡선 특성 실험을 통해 고찰하였다. 실험 결과로부터 MWNTs의 질소 원소구성비가 늘어날수록 축전용량이 증가하는 것을 확인하였으며, Urea 처리된 MWNTs의 축전용량이 가장 높은 수치를 나타내었다. 이는 전극 표면과 전하 활성종 간의 젖음성이 증가하고, 표면 관능기의 밀도가 증가하기 때문인 것으로 사료된다.

• 한국전기전자재료학회논문지
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• 제24권12호
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• pp.944-948
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• 2011

In this paper, flicker noise characteristic and channel hot carrier degradation of NMOSFETs with plasma nitrided oixde (PNO) and thermally nitrided oxide (TNO) are analyzed in depth. Compared with NMOSFET with TNO, flicker noise characteristic of NMOSFET with PNO is improved significantly because nitrogen density in PNO near the Si/$SiO_2$ interface is less than that in TNO. However, device degradation of NMOSFET with PNO by channel hot carrier stress is greater than that with TNO although PMOSFET with PNO showed greater immunity to NBTI degradation than that with TNO in previous study. Therefore, concurrent investigation of the reliability as well as low frequency noise characteristics of NMOSFET and PMOSFET is required for the development of high performance analog MOSFET technology.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2012년도 제43회 하계 정기 학술대회 초록집
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• pp.86-86
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• 2012

The new approaches for silicon solar cell of new concept have been actively conducted. Especially, solar cells with wire array structured radial p-n junctions has attracted considerable attention due to the unique advantages of orthogonalizing the direction of light absorption and charge separation while allowing for improved light scattering and trapping. One-dimenstional semiconductor nano/micro structures should be fabricated for radial p-n junction solar cell. Most of silicon wire and/or pillar arrays have been fabricated by vapour-liquid-solid (VLS) growth because of its simple and cheap process. In the case of the VLS method has some weak points, that is, the incorporation of heavy metal catalysts into the growing silicon wire, the high temperature procedure. We have tried new approaches; one is electrochemical etching, the other is noble metal catalytic etching method to overcome those problems. In this talk, the silicon pillar formation will be characterized by investigating the parameters of the electrochemical etching process such as HF concentration ratio of electrolyte, current density, back contact material, temperature of the solution, and large pre-pattern size and pitch. In the noble metal catalytic etching processes, the effect of solution composition and thickness of metal catalyst on the etching rate and morphologies of silicon was investigated. Finally, radial p-n junction wire arrays were fabricated by spin on doping (phosphor), starting from chemical etched p-Si wire arrays. In/Ga eutectic metal was used for contact metal. The energy conversion efficiency of radial p-n junction solar cell is discussed.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2012년도 제43회 하계 정기 학술대회 초록집
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• pp.139-139
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• 2012

With angle resolved photoemission spectroscopy (ARPES), the surface electronic band structures of Pt3Co (111) and Pt3Ni (111) single crystals are investigated, which allow to study the bonding interaction between chemically absorbed atomic oxygen and its surfaces. The d-band electrons of subsurface TM are separated from the direct chemical bonding with atomic oxygen. That is, the TM does not contribute to direct chemical bonding with oxygen. From the density functional theory (DFT) calculations, it is identified that the main origin of improved oxygen absorption property, i.e. softening of Pt-O bonding, is due to the suppression of Pt surface-states which is generated from change of interlayer potential, i.e. charge polarization, between Pt-top and TM-subsurface. Our results point out the critical roles of subsurface TM in modifying surface electronic structures, which in turn can be utilized to tune surface chemical properties.

• Bulletin of the Korean Chemical Society
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• 제33권10호
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• pp.3407-3412
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• 2012

The Ti incorporation at Fe-site in the double perovskite lattice of $Sr_2FeNbO_6$ (SFNO) system is studied. The Ti concentration optimization yielded an efficient photocatalyst. At an optimum composition of Ti as x = 0.07 in $Sr_2Fe_{1-x}Ti_xNbO_6$, the photocatalyst exhibited 2 times the quantum yield for photolysis of $H_2O$ in presence of $CH_3OH$, than its undoped counterpart under visible light (${\lambda}{\geq}420nm$). Heavily Ti-doped $Sr_2Fe_{1-x}Ti_xNbO_6$ lattice exhibited poor photochemical properties due to the existence of constituent impurity phases as observed in the structural characterization, as well as deteriorated optical absorption. The higher electron-density acquired by n-type doping seem to be responsible for the more efficient charge separation in $Sr_2Fe_{1-x}Ti_xNbO_6$ (0.05 < x < 0.4) and thus consequently displays higher photocatalytic activity. The Ti incorporated structure also found to yield stable photocatalyst.

• 대한전자공학회논문지SD
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• 제38권12호
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• pp.56-65
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• 2001

본 논문은 이상적인 균일한 무손실 유전체를 갖는 일반적인 3차원 연결선 구조에서의 커패시턴스 추출 시, 널리 사용되는 일차 대조법(First-order collocation) 외에 고차 구적법을 결합하여 사용함으로써 정확성을 제고하고, 반복적 행렬-벡터의 곱을 효율적으로 수행하기 위한 알고리즘을 제안한다. 제안된 기법은 연결선에서 전기적 성질이 집중되어 있는 코너나 비아를 포함한 경우에 일차 대조법 대신에 구적법을 이용하여 고차로 근사함으로써 정확성을 보장한다. 또한, 이 기법은 경계 요소 기법에서 행렬의 대부분이 수치적으로 저차 계수(low rank)를 이룬다는 회로상의 전자기적 성질을 이용하여 모형차수를 축소함으로써 효율성을 증진한다. 이 기법은 SVD(Singular Value Decomposition)에 기반한 저차 계수 행렬 축소 기법과 신속한 행렬의 곱셈 연산을 위한 Krylov-subspace 차수 축소 기법인 Gram-Schmidt 알고리즘을 도입함으로써 효율적인 연산을 수행할 수 있다. 제안된 방법은 허용 오차 범위 내에서 효율적으로 행렬-벡터의 곱셈을 수행하며, 이를 기존의 연구에서 제시된 기법과의 성능 평가를 통하여 보인다.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2016년도 제50회 동계 정기학술대회 초록집
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• pp.392.1-392.1
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• 2016

Nowadays, research interest in developing the wearable devices are growing remarkably. Portable consumer electronic systems are becoming lightweight, flexible and even wearable. In fact, wearable electronics require energy storage device with thin, foldable, stretchable and conformable properties. Accordingly, developing the flexible energy storage devices with desirable abilities has become the main focus of research area. Among various energy storage devices, supercapacitors have been considered as an attractive next generation energy storage device owing to their advantageous properties of high power density, rapid charge-discharge rate, long-cycle life and high safety. The energy being stored in pseudocapacitors is relatively higher compared to the electrochemical double-layer capacitors, which is due to the continuous redox reactions generated in the electrode materials of pseudocapacitors. Generally, transition metal oxides/hydroxide (such as $Co_3O_4$, $Ni(OH)_2$, $NiFe_2O_4$, $MnO_2$, $CoWO_4$, $NiWO_4$, etc.) with controlled nanostructures (NSs) are used as electrode materials to improve energy storage properties in pseudocapacitors. Therefore, different growth methods have been used to synthesize these NSs. Of various growth methods, electrochemical deposition is considered to be a simple and low-cost method to facilely integrate the various NSs on conductive electrodes. Herein, we synthesized amorphous $NiWO_4$ NSs on cost-effective conductive textiles by a facile electrochemical deposition. The as-grown amorphous $NiWO_4$ NSs served as a flexible and efficient electrode for energy storage applications.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2016년도 제50회 동계 정기학술대회 초록집
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• pp.246-246
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• 2016

Tungsten-nitrogen (W-N) co-doping has been known to enhance the photocatalytic activity of anatase titania nanoparticles by utilizing visible light. The doping effects are, however, largely dependent on calcination or annealing conditions, and thus, the massive production of quality-controlled photocatalysts still remains a challenge. Using density functional theory (DFT) thermodynamics and time-dependent DFT (TDDFT) computations, we investigate the atomic structures of N doping and W-N co-doping in anatase titania, as well as the effect of the thermal processing conditions. We find that W and N dopants predominantly constitute two complex structures: an N interstitial site near a Ti vacancy in the triple charge state and the simultaneous substitutions of Ti by W and the nearest O by N. The latter case induces highly localized shallow in-gap levels near the conduction band minimum (CBM) and the valence band maximum (VBM), whereas the defect complex yielded deep levels (1.9 eV above the VBM). Electronic structures suggest that substitutions of Ti by W and the nearest O by N improves the photocatalytic activity of anatase by band gap narrowing, while defective structure degrades the activity by an in-gap state-assisted electron-hole recombination, which explains the experimentally observed deep level-related photon absorption. Through the real-time propagation of TDDFT (rtp-TDDFT), we demonstrate that the presence of defective structure attracts excited electrons from the conduction band to a localized in-gap state within a much shorter time than the flat band lifetime of titania. Based on these results, we suggest that calcination under N-rich and O-poor conditions is desirable to eliminate the deep-level states to improve photocatalysis.