• Title/Summary/Keyword: charge density

Search Result 1,131, Processing Time 0.038 seconds

SnO2 Mixed Banana Peel Derived Biochar Composite for Supercapacitor Application

  • Kaushal, Indu;Maken, Sanjeev;Kumar Sharma, Ashok
    • Korean Chemical Engineering Research
    • /
    • v.56 no.5
    • /
    • pp.694-704
    • /
    • 2018
  • Novel $SnO_2$ mixed biochar composite was prepared from banana peel developed as electrode material for supercapacitor using simple chemical co-precipitation method. The physiochemical and morphological properties of activated composite $SnO_2$ mixed biochar were investigated with XRD, FTIR, UV-vis, FESEM and HRTEM. The composite accounts for outstanding electrochemical behavior such as high specific capacitance, significant rate capability and leading to good cycle retention up to 3500 cycles when used as electrode material for supercapacitors. Highly permeable $SnO_2$ mixed biochar derived from banana peel exhibited maximum specific capacitance of $465F\;g^{-1}$ at a scan rate of $10mV\;s^{-1}$ by cyclic voltammetry (CV) and $476Fg^{-1}$ at current density of $0.15Ag^{-1}$ by charge discharge studies significantly higher about 47% than previously reported identical work on banana peel biochar.

Studies on The Optical and Electrical Properties if Europium Complexes with Monolayer and Multilayer (Europium complexes 단층과 다층 구조 박막의 전기적ㆍ광학적 특성에 관한 연구)

  • 이명호;표상우;이한성;김영관;김정수
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
    • /
    • v.11 no.10
    • /
    • pp.871-877
    • /
    • 1998
  • Electroluminescent(EL) devices based on organic materials have been of great interest due to their possible applications for large-area flat-panel displays, where they are attractive because of their capability of multicolor emission, and low operation voltage. In this study, glass substrate/ITO/Eu(TTA)$_3$(phen)/Al, glass substrate/ITO/Eu(TTA)$_3$(phen)/Al and glass substrate/ITO/Eu(TTA)$_3$(phen)/AlQ$_3$/Al structures were fabricated by vacuum evaporation method, where aromatic diamine(TPD) was used as a hole transporting material, Eu(TTA)$_3$(phen) as an emitting material, and Tris(8-hydroxyquinoline) aluminu-m(AlQ$_3$) as an electron transporting layer. Electrolumescent(EL) and I-V characteristics of Eu(TTA)$_3$-(-phen) were investigated. These structures show the red EL spectra, which are almost the same at the PL spectrum of Eu(TTA)$_3$(phen). I-V characteristics of this structure show that turn-on voltage was 9V and current density was 0.01A/㎤ at a operation voltage of 9V. Electrical transporting phenomena of these structures were explained using the trapped-charge-limited current model with I-V characteristics.

  • PDF

Studies on The Optical and Electrical Properties of Europium Complex (Europium compound박막의 전기적 광학적 특성에 관한 연구)

  • 이명호;표상우;김영관;김정수;이한성
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
    • /
    • 1998.06a
    • /
    • pp.317-320
    • /
    • 1998
  • Electroluminescent(EL) devices based on organic materials have been of great interest due to their possible applications for large-area flat-panel displays, where they are attractive because of their capability of multicolor emission, and low operation voltage. In this study, glass substrate/ITO/Eu(TTA)$_3$(Phen)/Al(A), glass substrate/ITO/TPD/Eu(TTA)$_3$(phen)/Al(B) aNd glass substrate/ITO/TPD/Eu(TTA)$_3$(Phen)/A1Q$_3$/Al (C) structures were fabricated by vacuum evaporation method, where aromatic diamine(TPD) was used as a hole transporting material, Eu(TTA)$_3$(phen) as an emitting material, and tris(8-hydroxyquinoline) Aluminum (AlQ$_3$) as an electron transporting layer. Etectroluminescent(EL) and I-V characteristics of Eu(TTA)$_3$(phen) with a various thickness were investigated. This structure shows the red EL spectrum, which is almost the same as the PL spectrum of Eu(TTA)$_3$(phen). I-V characteristics of this structure show that turn-on voltage was 9V and current density was 0.01A/㎤ at a dc operation voltage of 9V. Electrical transporting phenomena of these structures was explained using the trapped-charge-limited current model with I-V characteristics.

  • PDF

Scaled SONOSFET NOR Type Flash EEPROM (Scaled SONOSFET NOR형 Flash EEPROM)

  • 김주연;권준오;김병철;서황열
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
    • /
    • 1998.06a
    • /
    • pp.75-78
    • /
    • 1998
  • The SONOSFET Shows low operation voltage, high cell density, anti good endurance due to modified Fowler-Nordheim tunneling as memory charge injection method. In this paper, therefore, the NOR-type Flash EEPROM composed of SONOSFET, which has fast lead operation speed and Random Access characteristics, is proposed. An 8${\times}$8 bit NOR-type SONOSFET Flash EEPROM had been designed and its electrical characteristics were verified. Read/Write/Erase operations of it were verified with the spice parameters of SONOSFETs which had Oxide-Nitride-Oxide thickness of 65${\AA}$-165${\AA}$-35${\AA}$ and that of scaled down as 33${\AA}$-53${\AA}$-22${\AA}$, respectively. When the memory window of the scaled-down SONOSFET with 8V operation was similar to that of the SONOSFET with 13V operation, the Read operation delay times of the scaled-down SONOSFET were 25.4ns at erase state and 32.6ns at program state, respectively, and those of the SONOSFET were 23.5ns at erase state and 28.2ns at program state, respectively.

  • PDF

Forward Current Transport Mechanism of Cu Schottky Barrier Formed on n-type Ge Wafer

  • Kim, Se Hyun;Jung, Chan Yeong;Kim, Hogyoung;Cho, Yunae;Kim, Dong-Wook
    • Transactions on Electrical and Electronic Materials
    • /
    • v.16 no.3
    • /
    • pp.151-155
    • /
    • 2015
  • We fabricated the Cu Schottky contact on an n-type Ge wafer and investigated the forward bias current-voltage (I-V) characteristics in the temperature range of 100~300 K. The zero bias barrier height and ideality factor were determined based on the thermionic emission (TE) model. The barrier height increased and the ideality factor decreased with increasing temperature. Such temperature dependence of the barrier height and the ideality factor was associated with spatially inhomogeneous Schottky barriers. A notable deviation from the theoretical Richardson constant (140.0 Acm-2K-2 for n-Ge) on the conventional Richardson plot was alleviated by using the modified Richardson plot, which yielded the Richardson constant of 392.5 Acm-2K-2. Finally, we applied the theory of space-charge-limitedcurrent (SCLC) transport to the high forward bias region to find the density of localized defect states (Nt), which was determined to be 1.46 × 1012 eV-1cm-3.

Apoptosis Induced by Polyethylenimine/DNA Complex in Polymer Mediated Gene Delivery

  • Lee, Min-Hyung
    • Bulletin of the Korean Chemical Society
    • /
    • v.28 no.1
    • /
    • pp.95-98
    • /
    • 2007
  • Polyethylenimine (PEI) has been widely investigated for delivery of DNA into cells. It was previously reported that there were at least two types of cytotoxicity in PEI-mediated gene delivery, immediate and delayed toxicities. PEI-mediated gene delivery protocols use net cationic complexes with an excess of PEI to maintain equilibrium between the complexed and dissociated forms in solution. In this study, toxicity of free PEI or PEI/ DNA complex was investigated. Human embryonic kidney 293 cells were incubated with free PEI or PEI/DNA complex for 4 hrs. Then, the cells were analyzed at 6, 24, 48, and 96 hrs after the incubation. In MTT assay, the viability of the cells incubated with PEI/DNA complex was continuously decreased with time, while that of the cells incubated with free PEI was not. On the contrary, the expression level of the luciferase gene increased gradually along with time. Release of DNAs from the complexes for transcription produces free PEIs in the cells. This process may proceed slowly due to high charge density of PEI and may be related to delayed toxicity. In addition, apoptotic cells were observed only in the cells incubated with the PEI/DNA complex from 24 hrs after the incubation. The results suggest that PEI/DNA complex contributes to the delayed toxicity by inducing apoptosis and that the delayed toxicity may be related to decomplexation of the complexes in the cells.

Evaluation of Corrosion Resistance Properties by Applying Galvanostatic Nanoscale Current Density on Passive Metals

  • Na, Seung-Chan;Lee, Jeong-Ja;Yang, Won-Seog;Hwang, Woon-Suk
    • Corrosion Science and Technology
    • /
    • v.6 no.1
    • /
    • pp.7-11
    • /
    • 2007
  • In this study, new evaluation method for the stability and corrosion resistance properties of passive films has been suggested by means of observation of self-activation process in open-circuit state and galvanostatic nanoscale reduction test. The experiments were performed for air-formed oxide film in case of plain carbon steel, and for anodically passivated films formed in aqueous sulfuric acid solutions in case of titanium and 304 stainless steel. From these experimental results, we derived two parameters, $i_{0}$ and $q_{0}$, which characterize the self-activation process and the properties of passive film on a stainless steel surface. The parameter $i_{0}$ was defined as the rate of self-activation, and $q_{0}$, the reduced amount of charge during the self-activation process. In conclusion, it is considered that the stability and corrosion resistance of passive metals and alloys can be evaluated quantitatively by three parameters of $\tau_{0}$, $q_{0}$, and $i_{0}$, which easily obtain by means of observing the self-activation process and galvanostatic nanoscale reduction test.

A Study on ALD $Al_2O_3$ Films for Rear Surface Passivation of Crystalline Silicon Solar Cells (결정질 태양전지의 후면 패시베이션을 위한 ALD $Al_2O_3$ 막 연구)

  • Roh, Si-Cheol;Seo, Hwa-Il
    • Journal of the Semiconductor & Display Technology
    • /
    • v.10 no.1
    • /
    • pp.57-61
    • /
    • 2011
  • To develop high efficiency crystalline solar cells, the rear surface passivation is very important. In this paper, $Al_2O_3$ films deposited by thermal ALD(atomic layer deposition) method were studied for rear surface passivation of crystalline solar cells and their passivation properties were evaluated. After the deposition of $Al_2O_3$ films on p-type Si wafers, the lifetime was increased very much due to the reduction of interface state density and the field effects of the negative fixed charge in the films. Also, optimum annealing condition and effects of SiNx capping layer were investigated. The best lifetime was obtained when the films were annealed at $400^{\circ}C$ for 15min. And the lifetime degradation of the $Al_2O_3$ films with SiNx capping layers was improved compared to those without the capping layers.

Electroluminescence Characteristics of a New Green-Emitting Phenylphenothiazine Derivative with Phenylbenzimidazole Substituent

  • Ahn, Yeonseon;Jang, Da Eun;Cha, Yong-Bum;Kim, Mansu;Ahn, Kwang-Hyun;Kim, Young Chul
    • Bulletin of the Korean Chemical Society
    • /
    • v.34 no.1
    • /
    • pp.107-111
    • /
    • 2013
  • A new green-emitting material with donor-acceptor architecture, 3,7-bis(1'-phenylbenzimidazole-2'-yl)-10-phenylphenothiazine (BBPP) was synthesized and its thermal, optical, and electroluminescent characteristics were investigated. Organic light-emitting diodes (OLEDs) with four different multilayer structures were prepared using BBPP as an emitting layer. The optimized device with the structure of [ITO/2-TNATA (40 nm)/BBPP (30 nm)/TPBi (30 nm)/Alq3 (10 nm)/LiF (1 nm)/Al (100 nm)] exhibited efficient green emission. Enhanced charge carrier balance and electron mobility in the organic layers enabled the device to demonstrate a maximum luminance of 31,300 cd/$m^2$, a luminous efficiency of 6.83 cd/A, and an external quantum efficiency of 1.62% with the CIE 1931 chromaticity coordinates of (0.21, 0.53) at a current density of 100 mA/$cm^2$.

저궤도 위성용 리튬-이온 배터리의 성능 확보를 위한 Balancing기법에 관한 고찰

  • Lee, Sang-Rok;Im, Seong-Bin;Jeon, Hyeon-Jin
    • The Bulletin of The Korean Astronomical Society
    • /
    • v.37 no.2
    • /
    • pp.188.1-188.1
    • /
    • 2012
  • 인공위성에 사용되는 배터리 기술은 1960년대 최초로 사용된 니켈 카드뮴(NiCd)을 시작으로 발전하기 시작해서 현재는 리튬-이온(Li-Ion)에 이르렀다. 리튬-이온 배터리는 높은 Energy Density(작은 크기와 무게), 낮은 자가 방전율을 가짐과 동시에 메모리 효과가 거의 없다는 장점이 있다. 하지만 리튬-이온 배터리 팩의 성능(Voltage, Capacity, Lifetime)은 사용된 Cell간 특성차이(State of Charge, Total Capacity Difference, Internal Impedance)에 의해 제한된다. 일반적으로 배터리는 원하는 전압과 용량을 확보하기 위해 직렬-병렬 혹은 병렬-직렬 구조를 가지는 팩 형태로 제작 된다. Cell간 특성차이가 존재하는 상태에서 배터리 팩을 사용할 경우 특정 Cell의 과충전 및 과방전이 발생하며 이로 인해 수명이 단축될 수 있고 심한 경우 폭발이 발생할 수 도 있다. 또한 Cell간 특성차이는 배터리팩의 사용가능 용량을 제한하는 효과를 가져 온다. 본 논문에서는 Battery 팩을 구성하는 Cell들에 특성 차이가 존재할 경우 발생할 수 있는 Battery 팩의 수명 단축 및 용량 감소 Mechanism에 대해서 고찰한다. 또한 Cell간 특성차이를 극복하기 위해 실제 위성 운용에 적용될 수 있는 배터리팩의 Balancing 방안과 함께 위성에 장착을 위해 보관중인 4p12s Battery의 Balancing 방안에 대해 고찰하고 Balancing 전후의 Cell간 특성(Voltage Dispersion) 차이 측정결과를 보인다. 이렇게 본 논문에서 소개한 리튬-이온 배터리의 전반적인 Balancing 방안은 추후 인공위성에 적용되는 리튬-이온 배터리의 운용 및 보관에 Guide Line을 제시할 것이라고 판단한다.

  • PDF