• 한국진공학회:학술대회논문집
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• 한국진공학회 2012년도 제42회 동계 정기 학술대회 초록집
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• pp.339-339
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• 2012

현재 MOS 소자에 사용되고 있는 $SiO_2$ 산화막은 그 두께가 얇아짐에 따라 Gate Leakage current와 여러 가지 신뢰성 문제가 대두되고 있고, 이를 극복하고자 High-k물질을 사용하여 기존에 발생했던 Gate Leakage current와 신뢰성 문제를 해결하고자 하고 있다. 본 실험에서는 High-k(hafnium) Gate Material에 온도 변화를 주었을 때 여러 가지 전기적인 특성 변화를 보는 방향으로 연구를 진행하였다. 기본적인 P-Type Si기판을 가지고, 그 위에 있는 자연적으로 형성된 산화막을 제거한 후 Hafnium Gate Oxide를 Atomic Layer Deposition (ALD)를 이용하여 증착하고, Aluminium을 전극으로 하는 MOS-Cap 구조를 제작한 후 FGA 공정을 진행하였다. 마지막으로 $300^{\circ}C$, $450^{\circ}C$로 30분정도씩 Annealing을 하여, 온도 조건이 다른 3가지 종류의 샘플을 준비하였다. 3가지 샘플에 대해서 각각 I-V (Gate Leakage Current), C-V (Mobile Charge), Interface State Density를 분석하였다. 그 결과 Annealing 온도가 올라가면 Leakage Current와 Dit(Interface State Density)는 감소하고, Mobile Charge가 증가하는 것을 확인할 수가 있었다. 본 연구는 향후 High-k 물질에 대한 공정 과정에서의 다양한 열처리에 따른 전기적 특성의 변화 대한 정보를 제시하여, 향후 공정 과정의 열처리에 대한 방향을 잡는데 도움이 될 것이라 판단된다.

• Journal of Electrochemical Science and Technology
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• 제9권1호
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• pp.20-27
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• 2018

We describe a redox-enhanced electric double-layer capacitor (EDLC) that turns the electrolyte in a conventional EDLC into an integral, active component for charge storage-charge is stored both through faradaic reactions with soluble redox-active molecules in the electrolyte, and through the double-layer capacitance in a porous carbon electrode. The mixed-redox electrolyte, composed of vanadium and iodides, was employed to achieve high power density. The electrochemical reaction in a supercapacitor with vanadium and iodide was studied to estimate the charge capacity and energy density of the redox supercapacitor. A redox supercapacitor with a mixed electrolyte composed of 0.75 M NaI and 0.5 M $VOSO_4$ was fabricated and studied. When charged to a potential of 1 V, faradaic charging processes were observed, in addition to the capacitive processes that increased the energy storage capabilities of the supercapacitor. The redox supercapacitor achieved a specific capacity of 13.44 mAh/g and an energy density of 3.81 Wh/kg in a simple Swagelok cell. A control EDLC with 1 M $H_2SO_4$ yielded 7.43 mAh/g and 2.85 Wh/kg. However, the relatively fast self-discharge in the redox-EDLC may be due to the shuttling of the redox couple between the polarized carbon electrodes.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2009년도 제36회 동계학술대회 초록집
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• pp.185.1-185.1
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• 2009

• 한국재료학회:학술대회논문집
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• 한국재료학회 1996년도 재료학회 추계학술발표회
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• pp.69-69
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• 1996

• 한국세라믹학회지
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• 제22권4호
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• pp.3-8
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• 1985

The layer charge densities and interlayer C. E. C(cation exchange capacity) of ten mica-type aluminosilicates from Yong-il Pohang-prefacture were determined by n-alkylammonium method which is based on the mo-nolayer-doubelelayer structural transition of ni-alkylammonium ion in interlayer space of the layered silcates. The upper and lower limits of layer charge and interlyer C, E, C estimated were about 0.25~0.36 eq/(Si, $Al)_4$ O10 and 69~99meq/100g, respectively.

• EDISON SW 활용 경진대회 논문집
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• 제4회(2015년)
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• pp.338-342
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• 2015

Ripples and charge impurity effect of graphene are considered as the origin of charge puddles in graphene sheet on SiO2. However, this topic is very controversial among researchers in graphene community. In this study, by using density functional theory, we calculate the band structure of the rippled graphene model and charged impurity model that is located close to the (0001) ${\alpha}$-quartz surface. We expect that this study will provide great insight on this matter.

• EDISON SW 활용 경진대회 논문집
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• 제5회(2016년)
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• pp.362-364
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• 2016

본 논문에서는 MOS(Metal Oxide Semiconductor) Capacitor의 산화막내에 다양한 원인에 의해 존재하는 비이상적인 전하들 중 Fixed Oxide Charge가 소자의 문턱전압에 어떤 영향을 주는지 분석했다. 분석한 결과 n+ polysilicon Gate를 가지고, 산화막인 $SiO_2$의 두께가 3nm이고, 도핑농도가 $10^{18}cm^{-2}$인 P형 실리콘 기판으로 이루어진 MOS Capacitor에서 Fixed Oxide Charge Density가 $C/cm^2$ 이상일 때 문턱전압을 0.01V 이상 감소시키고 $C/cm^2$ 이하일 때 문턱전압을 0.01V 이상 증가시켰다.

• 대한기계학회:학술대회논문집
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• 대한기계학회 2004년도 춘계학술대회
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• pp.1322-1327
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• 2004

In the present work, a series of experiments have been performed on electro-hydrodynamic atomization of non-conducting liquid using a charge injection type nozzle. Effects of liquid flow rate, input voltage, and distance between the needle and the ground electrode (nozzle-embedded metal plate) have been examined. For fixed electrode distances, total and spray currents increase with increase of liquid flow rate and input voltage. When the distance between the needle and the ground electrode becomes closer, total, leakage and spray current increase, but the onset voltage for dielectric breakdown decreases. When the electric field strength of the liquid jet exceeds that for the air breakdown, a portion of the electric charges in the liquid jet is dissipated into the ambient air, and the charge density shows a limiting value. Atomization quality can be improved by increasing the flow rate because the higher charge density is achieved with the larger liquid velocity in addition to the enhanced aerodynamic effect.

• Bulletin of the Korean Chemical Society
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• 제25권1호
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• pp.85-89
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• 2004

Geometrical structures of [Pd(L)$Cl_2$] with oxathia macrocycles have been calculated using ab initio secondorder Moller-Plesset (MP2) and Density Functional Theory (DFT) methods with triple zeta plus polarization (TZP) basis set level. In optimized Pd(L)$Cl_2$ complexes, Pd(II) locates at the center surrounded by a square planar array of two sulfurs on an oxathia macrocycle and two chlorides. The endo-Pd(II) complexes with an axial (Pd${\cdots}$O) interaction are more stable than the exo-Pd(II) complexes without the interaction. In the endo-Pd(II) complexes, the atomic charge of the oxygen atom moves to Pd(II) via the axial ($Pd{\cdots}$O) interaction and then, the charge transfer from Pd(II) to the S-atoms occurs stepwise via ${\pi}$-acceptors of the empty d-orbitals.

• 대한전기학회논문지
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• 제44권4호
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• pp.483-489
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• 1995

To investigate the mechanism generated by irradiation in the insulator layer irradiated MIS (Metal - Insulator - Semiconductor) device, the various types of MIS capacitors depending on insulator thickness, insulator types and implanted impurities are fabricated on the P-type wafer. MIS capacitors exposed by 1Mrad Co$^{60}$ .gamma.-ray are measured for flat band voltage and charge density shifts pre- and post-irradiation. The measuring results of post-irradiation show the flat band voltage shifting toward negative direction and charge density increasing regardless of parameters. This results have a good agreement with calculated data by computer simulation. Si$_{3}$N$_{4}$ layers have a good radiation-hardness than SiO$_{2}$ layers compared to the results of post-irradiation. Also, radiation-induced negative trap is discovered in the implanted insulator layer. Using numerical analysis, four continuty equations (conduction-band electrons continuity equation, valence-band holes continuity equation, trapped electrons continuity equation, trapped holes continuity equation) are solved and charge distributions according to the distance and Si-Insulator interface states are investigated.