• Proceedings of the Korean Society for Noise and Vibration Engineering Conference
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• 1991.04a
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• pp.75-79
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• 1991

고도로 산업화가 진행됨에 따라 회전기계는 더욱 중요시되고 있으며 이의 성능 향상에 부단한 노력이 경주되고 있다. 특히 우주 시대의 개막과 더불어 우주선 및 인공위성에 사용하기 위해 초소형이며 초고속의 고성능회전모타 를 개발하기에 이르렀다. 한 예로서 미국립항공우주국(NASA)의 스페이스셔 틀에 사용되는 주엔진 터보펌프를 들 수 있는데 이 터보펌프는 접시만한 크 기로써 71000마력을 생성해 낸다. 이러한 가공할 만한 에너지 밀도와 유량을 감당해 내려면 종래의 회전기계보다는 훨씬 더 높은 회전속도를 가져야 한 다. 이러한 회전체는 큰 관성부하와 진 동 및 동안정성의 문제등을 내포하고 있다. 고성능 회전기계의 또다른 예로서 초정밀 가공용 공작기계를 들 수 있 다. 선반 혹은 밀링머신으로 초정밀가공을 행하기 위해서는 회전축의 진동이 극히 작아야 한다. 이와 같이 오늘날 갈수록 초고성능 초정밀도를 추구함에 있어서 회전축의 진동을 현장에서 모니터링하고 이 진동데이터를 분석하여 회전축을 제어하는 것이 강력히 요구되어진다. 따라서 in-situ 측정이 중요성 을 띠게 되었는데 이는 제어기술의 바탕이 되는 자료를 현장에서 제공할 수 있기 때문이다. 회전축 진동측정의 대상이 되는 것들은 모타, 발전기, 엔진 및 터빈등을 대표적으로 들 수가 있다. 여기서 소형회전기계의 축표면과 같 이 비교적 곡면을 이루고 있는 부분의 진동변위 측정에 신중한 고려가 요구 되어 진다. 이는 축의 곡면도에 따라 감도가 변화하기 때문이다. 따라서 평 판에 대한 calibration 챠트를 회전기계축진동 변위환상에 이용하면 곡률에 따라서 오차가 생기게 된다. 본 연구에서는 비접촉 축진동측정시 발생되는 오차에 대하여 검토하고자 한다. from the studies, the origin of ${\alpha}$$_1$peak was attributed to the detrapping process form trap with 2.88[eV] deep of injected space charge from the chathode in the crystaline regions. The origin of ${\alpha}$$_2$ peak was regarded as the detrapping process of ions trapped with 0.9[eV] deep originated from impurity-ion remained in the specimen during production process of the material, in the crystalline regions. The origin of ${\beta}$ peak was concluded to be due to the depolarization process of "C=0"dipole with the activation energy of 0.75[eV] in the amorphous regions. The origin of ${\gamma}$ peak was responsible to the process combined with the depolarization of "CH$_3$", chain segment, with the activation energy of carriers from the shallow trap with 0.

• Proceedings of the Korean Society for Noise and Vibration Engineering Conference
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• 1991.04a
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• pp.147-152
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• 1991

양단이 고정된 보가 변형할 때에는 중간 평면의 신장을 수반하게 된다. 운동 의 진폭이 증가함에 따라 이 신장이 보의 동적 응답에 미치는 영향은 심각 하게 된다. 이러한 현상은 응력과 변형도와의 관계가 선형적이라 하더라도 변형도와 변위와의 관계식은 비선형이 되며 결국은 보의 비선형 운동방정식 을 낳게된다. 보는 연속계이긴하지만 근사를 위하여 다자유도계로 간주할 수 있다. 비선형 다자유도계에 있어서는 선형화된 계의 고유진동수끼리 적절한 관계를 가질 때 내부공진이 발생할 수 있다. 양단이 고정된 곧은 보의 비선 형 동적응답이 그동안 많이 연구되어 오고 있으며, 집중질량을 가지고 직각 으로 굽은 보의 해석을 위하여 내부공진을 고려한 해석적 혹은 실험적 연구 가 이루어져 왔다. 그중에서도 Nayfeh등은 조화가진 하의 핀과 꺾쇠로 고정 된(hinged-clamped) 보의 정상상태응답을 해석하기 위해 두 모우드 사이의 내부공진을 고려하였다. 이 연구에서는 세 모우드 사이의 내부공진을 고려하 여 강제진행 중인 보의 비선형 해석을 다루고자 한다. 이 문제에 관심을 갖 게 된 동기는 "연속계의 비선형 해석에서 더 많은 모우드를 포함시키면 어 떤 결과를 낳게 될 것인가\ulcorner"라는 질문에서 생겨난 것이다. 갤러킨 법을 이용 하여 비선형 편미분 방정식과 경계 조건으로 표현되는 이 문제를 연립 비선 형 상미분 방정식으로 변환한다. 다중시간법(the method of multiple scales) 을 이용하여 이 상미분 방정식을 정상상태에서의 세 모우드의 진폭과 위상 에 대한 연립비선형 대수방정식으로 변환한다. 이 대수방정식을 수치적으로 풀어서 정상상태 응답을 구하고 Nayfeh등의 결과와 비교한다. 결과와 비교한다. studies, the origin of ${\alpha}$$_1$peak was attributed to the detrapping process form trap with 2.88[eV] deep of injected space charge from the chathode in the crystaline regions. The origin of ${\alpha}$$_2$ peak was regarded as the detrapping process of ions trapped with 0.9[eV] deep originated from impurity-ion remained in the specimen during production process of the material, in the crystalline regions. The origin of ${\beta}$ peak was concluded to be due to the depolarization process of "C=0"dipole with the activation energy of 0.75[eV] in the amorphous regions. The origin of ${\gamma}$ peak was responsible to the process combined with the depolarization of "CH$_3$", chain segment, with the activation energy of carriers from the shallow trap with 0.4[eV], in he amorp

• Analytical Science and Technology
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• v.6 no.5
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• pp.479-487
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• 1993

Potassium-Graphite Fiber Intercalation Compounds(K-GFIC) have been prepared from well oriented pitch-based Graphite fiber by the transformed two-bulbs method with variation of reaction temperatures of graphite($T_g$ : $450^{\circ}C$, $400^{\circ}C$, $350^{\circ}C$, $300^{\circ}C$, $250^{\circ}C$). The stage transition process of K-GFICs was studied by X-ray diffraction methods, and we have observed peaks with d-values of (001) diffraction of $5.40{\AA}$ and $8.78({\pm}0.01){\AA}$, which are charecteristic for the stage 1 and stage 2, respectively. The stage stability and energy states of K-GFICs were studied by UV/VIS spectrophotometer. As a results, We found that the minimum values of reflactance of K-GFICs with pure stage was moved to higher energy pristine Graphite fiber's. But because of mixtured stage, we could not observe minimum reflectance in the visible region at high reaction temperatures($400^{\circ}C$, $450^{\circ}C$). From X-ray diffraction and UV/VIS sepctrophotometry data, we can suggest that K-GFICs with lower stage has many charge carriers existed between C atoms of graphite Layers. And then, these results also provides information on the electrical and other physical properties of K-GFICs.

• Journal of the Korean Vacuum Society
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• v.21 no.1
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• pp.62-68
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• 2012

The conversion efficiency of solar cells depending on incident angle of light is important for building-integrated photovoltaics (BIPV) applications. The quantum efficiency is the ratio of the number of charge carriers collected by the solar cell to the number of photons of a given energy shining on the solar cell. The analysis of angle dependence of quantum efficiencies give more information upon the variation of power output of a solar cell by the incident angle of light. The variations in power output of solar cells with increasing angle of incidence is different for the type of cell structures. In this study we present the results of the quantum efficiency measurement of single-crystalline silicon solar cells and a-Si:H thin-film solar cells with the angle of incidence of light. As a result, as the angle of incidence increases in single-crystalline silicon solar cells, quantum efficiency at all wavelength (300~1,100 nm) of light were reduced. But in case of a-Si:H thin-film solar cells, quantum efficiency was increased or maintained at the angle of incidence from 0 degree to about 40 degrees and dramatically decrease at more than 40 degrees in the range of visible light. This results of quantum efficiency with increasing incident angle were caused by haze and interference effects in thin-film structure. Thus, the structural optimization considering incident angle dependence of solar cells is expected to benefit BIPV.

• Journal of the Korean Magnetics Society
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• v.20 no.5
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• pp.173-177
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• 2010

The electronic structure of charge-density-wave (CDW) system $CeTe_2$ has been investigated by using angle-resolved photoemission spectroscopy (ARPES). The clearly dispersive band structures are observed in the measured ARPES spectra, indicating the good quality of the single-crystalline sample employed in this study. The four-fold symmetric patterns are observed in the constant energy (CE) mappings, indicating the $2{\times}2$ lattice deformation in the Te(1) sheets. The observed CE images are similar to those of $LaTe_2$, suggesting that Ce 4f states have the minor contribution to the CDW formation in $CeTe_2$. This study reveals that the carriers near the Fermi level should have mainly the Te(1) 5p and Ce 5d character, that the Te(1) 5p bands contribute to the CDW formation, and that the Ce 5d bands cross the Fermi level even in the CDW state.

• Proceedings of the Korean Society for Noise and Vibration Engineering Conference
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• 1992.10a
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• pp.113-116
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• 1992

소음의 발생 원인은 공기역학적 측면과 구조적 측면으로 나누어지는데, 실제 로는 유동장에서 발생되는 음원과 구조물에서 발생되는 진동과의 상호 간섭 에 의해 보다 복잡한 형태로 발생된다. 음장 문제를 두가지 범주로 구분하면 첫째는 음원과 구조물과의 상호교란에 의한 산란문제(Scattering)와 둘째로 구조물의 자체 진동에 의한 음의 전파현상과 구조물내부에 회전체와 같은 음원이 존재하는 경우에 음의 전파를 관측하는 방사문제(Radiation)가 있다. 실제로 산업용 터빈이나 비행기 엔진 흡입구에서 발생되는 소음, 또는 자동 차의 배기구를 통해 발생되는 소음 그리고 엔진의 진동에 의한 구조적 소음, 기타 가전제품의 회전체(Fan & Motor)에 의한 소음은 방사(Radiation)의 문 제로서 중요 관심 과제이다 수치적 기법으로 근래에 많이 사용하는 방법으 로 BEM(경계요소법), FEM(유한요소법), FDM(유한차분법)이 있는데 본 연 구에서는 유한요소법을 이용하기로 한다. 지금까지는 주로 BEM을 통해서 Far-Field의 음향장을 해석하였지만 복잡한 형상을 갖는 구조물내부에서의 음향장 변화나 구조물 내부에 음원이 존재하는 경우 또는 구조물 자체가 갖 는 물리적 특성치 변화 즉 물체표면에서의 부분 진동문제의 음향장 해석에 있어서 가장 잘 대체해 나갈 수 있는 방법이 유한 요소법이라고 여겨진다. 본 연구에서는 2차원 또는 기하학적으로 축대칭인 3차원 Duct내부에 음원이 존재하는 경우 음원전파에 따른 Near-field와 far-field에서 음의 방향성을 예측하기 위해 먼저 기본적인 유한요소법에 의한 Robin 경계조건을 사용하 여 계산된 결과와 Infinite Element를 도입하여 계산할 결과를 비교하여, Infinite Element가 보다 효율적이며 타당한 결과를 얻음을 확인해 보기로 한다.다 복합적인 측면에서 치료에 임하여야 할 것으로 사료된다. with such configuration.trap with 2.88[eV] deep of injected space charge from the chathode in the crystaline regions. The origin of ${\alpha}$$_2$ peak was regarded as the detrapping process of ions trapped with 0.9[eV] deep originated from impurity-ion remained in the specimen during production process of the material, in the crystalline regions. The origin of ${\beta}$ peak was concluded to be due to the depolarization process of "C=0"dipole with the activation energy of 0.75[eV] in the amorphous regions. The origin of ${\gamma}$ peak was responsible to the process combined with the depolarization of "CH$_3$", chain segment, with the activation energy of carriers from the shallow trap with 0.4[eV], in he amorphous regions.의 증발산율은 우기의 기상자료를 이용하여 구한 결과 0.05 - 0.10 mm/hr 의 범위로서 이로 인한 강우손실량은 큰 의미가 없음을 알았다.재발이 나타난 3례의 환자

• Journal of the Korea Academia-Industrial cooperation Society
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• v.19 no.6
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• pp.709-714
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• 2018

This study researched the reasons for changing polarity in accordance with junction properties in an interface of semiconductors. The contact properties of semiconductors are related to the effect of the semiconductor's device. Therefore, it is an important factor for understanding the junction characteristics in the semiconductor to increase the efficiency of devices. For generation of various junction properties, carbon-doped silicon oxide (SiOC) was deposited with various argon (Ar) gas flow rates, and the characteristics of the SiOC was varied based on the polarity in accordance with the Ar gas flows. Tin-doped zinc oxide (ZTO) as the conductor was deposited on the SiOC as an insulator to research the conductivity. The properties of the SiOC were determined from the formation of a depletion layer by the ionization reaction with various Ar gas flow rates due to the plasma energy. Schottky contact was good in the condition of the depletion layer, with a high potential barrier between the silicon (Si) wafer and the SiOC. The rate of ionization reactions increased when increasing the Ar gas flow rate, and then the potential barrier of the depletion layer was also increased owing to deficient ions from electron-hole recombination at the junction. The dielectric properties of the depletion layer changed to the properties of an insulator, which is favorable for Schottky contact. When the ZTO was deposited on the SiOC with Schottky contact, the stability of the ZTO was improved by the ionic recombination at the interface between the SiOC and the ZTO. The conductivity of ZTO/SiOC was also increased on SiOC film with ideal Schottky contact, in spite of the decreasing charge carriers. It increases the demand on the Schottky contact to improve the thin semiconductor device, and this study confirmed a high-performance device owing to Schottky contact in a low current system. Finally, the amount of current increased in the device owing to ideal Schottky contact.

• THE INTERNATIONAL COMMERCE & LAW REVIEW
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• v.78
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• pp.1-29
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• 2018

This article demonstrates that both the Warsaw Convention Systemand the Montreal Convention are not designed for multimodal transport, let alone for "Door to Door" transport. The polemic directed against the "Door to Door" application of the Warsaw Convention systemand the Montreal Convention is predominantly driven by the text and the drafting philosophy of the said Contentions that since 1929 support unimodalism-with the rule that "the period of the carriage by air does not expend to any carriage by land, by sea or by inland waterway performed outside an airport" playing a profound role in restricting their multimodal aspirations. The drafters of the Montreal Convention were more adventurous than their predecessors with respect to the boundaries of the Montreal Convention. They amended Art. 18(3) by removing the phrase "whether in an aerodrome or on board an aircraft, or, in the case of landing outside an aerodrome, in any place whatsoever", however, they retained the first sentence of Art. 18(4). The deletion of the airport limitation fromArt. 18(3) creates its own paradox. The carrier can be held liable under the Montreal Convention for the loss or damage to cargo while it is in its charge in a warehouse outside an airport. Yet, damage or loss of the same cargo that occurs during its surface transportation to the aforementioned warehouse and vice versa is not covered by the Montreal Convention fromthe moment the cargo crosses the airport's perimeter. Surely, this result could not have been the intention of its drafters: it certainly does not make any commercial sense. I think that a better solution to the paradox is to apply the "functional interpretation" of the term"airport". This would retain the integrity of the text of the Montreal Convention, make sense of the change in the wording of Art. 18(3), and nevertheless retain the Convention's unimodal philosophy. English courts so far remain loyal to the judgment of the Court of Appeal in Quantum, which constitutes bad news for the supporters of the multimodal scope of the Montreal Convention. According the US cases, any losses occurring during Door to Door transportation under an air waybill which involves a dominant air segment are subject to the international air law conventions. Any domestic rules that might be applicable to the road segment are blatantly overlooked. Undoubtedly, the approach of the US makes commercial. But this policy decision by arguing that the intention of the drafters of the Warsaw Convention was to cover Door to Door transportation is mistaken. Any expansion to multimodal transport would require an amendment to the Montreal Convention, Arts 18 and 38, one that is not in the plans for the foreseeable future. Yet there is no doubt that air carriers and freight forwarders will continue to push hard for such expansion, especially in the USA, where courts are more accommodating.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.3 no.1
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• pp.66-74
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• 1993

Potassium-Graphite Intercalation Compounds(K-GICs) have been prepared from purified natural graphite by transformed two-bulb method with variations of reaction temperature ($T_g:450^{\circ}C$, $400^{\circ}C$, $350^{\circ}C$, $300^{\circ}C$, $250^{\circ}C$).Prepared K-GICs were identified to stage transition process by X-ray diffraction data. At these results, d values of (00l) diffraction at 1 stage and 2 stage were corresponded to $5.35\AA$ and $8.73\AA$ respectively. The stage stability and energy states of K-GlCs were obtained by UV /VIS Spectrophotometric data. We found that the minimum value of reflectance was 2.67 eV(465nm) at $250^{\circ}C$and it's moved to higher energy than original graphite's. And X-ray diffraction and UV /VIS spectrophotometric datas suggest that K-GICs were formed lower stage and many charge carriers exist between C atoms of graphite. And then, these results also provide informations on the electrical and other physical properities of K-GICs.Especially, according to studied reports, d values differ from them of each author, but accurate values were established through this study.

• Solar Energy
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• v.17 no.4
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• pp.3-11
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• 1997

Because grain boundaries in polycrystalline silicon act as potential barriers and recombination centers for the photo-generated charge carriers, these defects degrade conversion effiency of solar cell. To reduce these effects of grain boundaries, we investigated various influencing factors such as thermal treatment, various grid pattern, selective wet etching for grain boundaries, buried contact metallization along grain boundaries, grid on metallic thin film. Pretreatment above $900^{\circ}C$ in $N_2$ atmosphere, gettering by $POCl_3$ and Al treatment for back surface field contributed to obtain a high quality poly-Si. To prevent carrier losses at the grain boundaries, we carried out surface treatment using Schimmel etchant. This etchant delineated grain boundaries of $10{\mu}m$ depth as well as surface texturing effect. A metal AI diffusion into grain boundaries on rear side reduced back surface recombination effects at grain boundaries. A combination of fine grid with finger spacing of 0.4mm and buried electrode along grain boundaries improved short circuit current density of solar cell. A ultra-thin Chromium layer of 20nm with transmittance of 80% reduced series resistance. This paper focused on the grain boundary effect for terrestrial applications of solar cells with low cost, large area, and high efficiency.