• 제목/요약/키워드: characteristics degradation

검색결과 2,230건 처리시간 0.036초

투명 백 시트와 봉지재 물질 조합에 따른 소형 슁글드 실리콘 태양전지 모듈의 열화 특성 분석 (Degradation Characteristics according to Encapsulant Materials Combining with Transparent Backsheet on the Mini Shingled Si Photovoltaic Modules)

  • 손형진;김성현
    • Current Photovoltaic Research
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    • 제8권1호
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    • pp.12-16
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    • 2020
  • This study investigates the degradation characteristics of different material types of ethyl vinyl acetate (EVA) and polyolefin (POE) with combining transparent backsheet. To this end, we fabricated samples with structure of glass/encapsulant/transparent backsheet for each type of encapsulants, and shingled Si modules with the same structure. The samples were then subjected to accelerated test by storing under damp heat condition of 85℃ and 85% RH. As a result, encaplsulant discoloration was observed, which the transmittance of the samples with EVA decreased in a rapid rate than the samples with POE. The discoloration also affected a power degradation of the shingled modules with a reduction of current density, resulting that the module with EVA showed more drop on the efficiency than the modules with POE. Furthermore, corrosion of the soldered ribbon caused by acetic acid produced from the degraded EVA also contributed in fill factor reduction.

Hot-carrier 효과로 인한 MOSFET의 성능저하 및 동작수명 측정 (Hot-carrier Induced MOSFET Degradation and its Lifetime Measurement)

  • 김천수;김광수;김여환;김보우;이진효
    • 대한전자공학회논문지
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    • 제25권2호
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    • pp.182-187
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    • 1988
  • Hot carrier induced device degradation characteristics under DC bias stress have been investigated in n-MOSFETs with channel length of 1.2,1.8 um, and compared with those of LDD structure device with same channel length. Based on these results, the device lifetime in normal operating bias(Vgs=Vds=5V) is evaluated. The lifetimes of conventional and LDD n-MOSFET with channel length of 1.2 um are estimated about for 17 days and for 12 years, respectively. The degradation rate of LDD n-MOSFET under the same stress is the lowest at n-region implnatation dose of 2.5E15 cm-\ulcorner while the substrate current is the lowest at the dose of 1E13cm-\ulcorner Thses results show that the device degradation characteristics are basic measurement parameter to find optimum process conditions in LDD devices and evaluate a reliability of sub-micron device.

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MgO 첨가에 따른 ZnO 세라믹 바리스터의 안정성 향상에 관한 연구 (A Study on the Improvement of the Electrical Stability Versus MgO Additive for ZnO Ceramic Varistors)

  • 소순진;김영진;박춘배
    • 한국전기전자재료학회논문지
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    • 제15권5호
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    • pp.398-405
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    • 2002
  • The degradation characteristics of MgO additive for the ZnO ceramic devices fabricated by the standard ceramic techniques are investigated in this study. These devices were made from basic Matsuoka's composition. Especially, MgO was added to analyze the degradation characteristics and devices were sintered in air at $1200^{\circ}C$. The conditions of DC degradation test were $115\pm2^{\circ}C$ for 12h. Using XRD and SEM, the phase and microstructure of samples were analyzed, respectively. The elemental analysis in the microstructures was performed by EDS, E-J analysis was used to determine $\alpha$. Frequency analysis was accomplished to understand the relationship between $R_G$ and $R_B$ with the electric stress at the equivalent circuit.

NO기반 게이트절연막 NMOS의 AC Hot Carrier 특성 (Characteristics of AC Hot-carrier-induced Degradation in nMOS with NO-based Gate Dielectrics)

  • 장성근;김윤장
    • 한국전기전자재료학회논문지
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    • 제17권6호
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    • pp.586-591
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    • 2004
  • We studied the dependence of hot-tarrier-induced degradation characteristics on nitrogen concentration in NO(Nitrided-Oxide) gate of nMOS, under ac and dc stresses. The $\Delta$V$_{t}$ and $\Delta$G$_{m}$ dependence of nitrogen concentration were observed, We observed that device degradation was suppressed significantly when the nitrogen concentration in the gate was increased. Compared to $N_2$O oxynitride, NO oxynitride gate devices show a smaller sensitivity to ac stress frequency. Results suggest that the improved at-hot carrier immunity of the device with NO gate may be due to the significantly suppressed interface state generation and neutral trap generation during stress.ess.

Nondestructive Characterization and In-situ Monitoring of Corrosion Degradation by Backward Radiated Ultrasound

  • Song, Sung-Jin;Kim, Young H.;Bae, Dong-Ho;Kwon, Sung D.
    • Corrosion Science and Technology
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    • 제4권3호
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    • pp.114-119
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    • 2005
  • Since the degradation caused by corrosion is restricted to the surface of materials, conventional ultrasonic nondestructive evaluation methods based on ultrasonic bulk waves are not applicable to characterization of the corrosion degradation. To take care of this difficulty, a new nondestructive evaluation method that uses ultrasonic backward radiation has been proposed recently. This paper explores the potential of this newly developed method for nondestructive characterization and in-situ monitoring of corrosion degradation. Specifically, backward radiated ultrasounds from aged thermo-mechanically controlled process (TMCP) steel specimens by corrosion fatigue were measured and their characteristics were correlated to those of the aged specimens. The excellent correlation observed in the present study demonstrates the high potential of the backward radiated ultrasound as an effective tool for nondestructive characterization of corrosion degradation. In addition, the potential of the backward radiated ultrasound to in-situ monitoring of corrosion degradation is under current investigation.

열화 메커니즘 규명을 위한 옥외용 실리콘고무의 산성비 성분 열화특성 연구 (A Consideration of Degradation Mechanism of a Effect of the Nitric Solution on the Aging Characteristics of the Outdoor Silicone Rubber)

  • 이정헌
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2002년도 춘계학술대회 논문집 센서 박막재료 반도체재료 기술교육
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    • pp.132-136
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    • 2002
  • In this paper, aging characteristics of outdoor silicone rubber insulator resulting from the acid rain have been investigated with regards to nitrate ion $({NO_{3}}^{-1})$. For this purpose, silicone rubber was aged by immersing into the nitric solutions with different level pH during 1500 hours and various tests (tracking, $tan{\delta}$, breakdown voltage, SEM, EDS, contact angle) were performed. It was observed that the degradation was increased to pH 2.5 slightly and at pH 1.5 highly. And thus, it could be expected that there is certain critical point between pH 1.5 and 2.5, which leads to throught degradation.

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Hot electron 효과로 노쇠화된 NMOSFET의 드레인 출력저항 특성 (The Characteristics of Degraded Drain Output Resistance of NMOSFET due to Hot Electron Effects)

  • 김미란;박종태
    • 전자공학회논문지A
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    • 제30A권9호
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    • pp.38-45
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    • 1993
  • In this study, the degradation characteristics of drain output resis-tance was described due to hot electron effects. An semi-empirical model for the degraded drain output resistance was derived from the measured device characteristics. The suggested model was verified from the measured data and the device parameter dependence was also analyzed. The degradation of drain output resistance was increased with stress time and had linear relationship with the degradation of drain current. The device lifetime which was defined by failure criteria of drain output resistance (such as $\Delta$ro/roo=5%) was equivalent to that of failure criteria of drain current (such as $\Delta$ID/ID=5%)

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핫 캐리어에 의한 피-모스 트랜지스터의 채널에서 이동도의 열화 특성 (Degradation Characteristics of Mobility in Channel of P-MOSFET's by Hot Carriers)

  • 이용재
    • 한국전기전자재료학회논문지
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    • 제11권1호
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    • pp.26-32
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    • 1998
  • We have studied how the characteristics degradation between effective mobility and field effect mobility of gate channel in p-MOSFET's affects the gate channel length being follow by increased stress time and increased drain-source voltage stress. The experimental results between effective and field-effect mobility were analyzed that the measurement data are identical at the point of minimum slope in threshold voltage, the other part is different, that is, the effective mobility it the faster than the field-effect mobility. Also, It was found that the effective and field-effect mobility. Also, It was found that the effective and field-effect mobility of p-MOSFET's with short channel are increased by decreased channel length, increased stress time and increased drain-source voltage stress.

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가속열화에 따른 페놀수지 절연재료의 트래킹 특성에 관한 연구 (A Study on the Tracking Characteristics of Phenolic Resin Insulation Material Due to Accelerated Degradation)

  • 김시국;최수길;이춘하
    • 한국화재소방학회논문지
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    • 제31권1호
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    • pp.42-49
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    • 2017
  • 본 논문은 가속열화에 따른 페놀수지 절연재료의 트래킹 특성에 관한 연구이다. 페놀수지 절연재료의 절연열화를 위해 가속수명 시험방법 중 아레니우스 방정식을 이용한 가속열화 실험을 진행하여 등가연수 0년, 10년, 20년, 30년, 40년 된 실험시료를 제작하였다. 그 후 가속열화된 실험시료를 대상으로 KS C IEC 60112 기준에 의한 트래킹 실험을 진행하였다. 가속열화에 따른 페놀수지의 트래킹 특성 측정결과 염화암모늄 0.1% 적하 시 등가수명 0년을 기준으로 위험성이 등가수명 10년 1.38배, 20년 1.45배, 30년 1.62배, 40년 1.94배 증가하는 것으로 나타났다. 염화암모늄 0.01% 적하 시 등가수명 년을 기준으로 위험성이 등가수명 10년 1.39배, 20년 1.52배, 30년 1.99배, 40년 5.30배 증가하는 것으로 나타났다. 실험 결과 노후화에 따른 절연열화가 오래될수록 트래킹 위험성이 커지는 것으로 나타났으며, 특히 등가수명 40년의 경우 그 위험성이 크게 증가하는 것으로 관측되었다. 따라서 노후화에 따른 절연열화 등의 위험성을 고려하여 제도적으로 권장 교체주기를 마련해 주는 것이 전기화재 발생 가능성 및 위험성을 최소화할 수 있을 것으로 생각된다.

절연유(絶緣油) 열화(劣化)센서 특성(特性) 연구(硏究) (A Study on the characteristics of degradation sensor for insulation oil)

  • 전영갑;선종호;강동식;주병수;윤진열;정상진
    • 대한전기학회:학술대회논문집
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    • 대한전기학회 1995년도 하계학술대회 논문집 C
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    • pp.1371-1374
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    • 1995
  • It is well known that the degradation of transformer oil conseqently lead to the failure of transformer. This paper discussed the characteristics of the degradation sensor checking transformer oil condition in live line. The degadation sensor is composed of base ring, electrodes and porous ceramic, passed through the transformer oil and checks the transformer oil condition through sensor's leakage current. So it is important to minimize the leakage current of base ring and connection parts. To investigate the leakage current of base ring and connection parts the characteristics of V-T-I and DC 2 KV and other examinations were performed. It is verified that ionized transformer oil caused by the expansion of temperature increases in the leakage current of porous ceramic sensor. It is certification that the leakage current of other parts of porous ceramic is very small(about 2%) compared with the porous ceramic body and it is confirmed that the leakage current in porous ceramic is changed sensitively according to the new oil(NO) and and the degradation oil(DO).

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