• Title/Summary/Keyword: characteristics degradation

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Degradation Characteristics according to Encapsulant Materials Combining with Transparent Backsheet on the Mini Shingled Si Photovoltaic Modules (투명 백 시트와 봉지재 물질 조합에 따른 소형 슁글드 실리콘 태양전지 모듈의 열화 특성 분석)

  • Son, Hyung Jin;Kim, Sung Hyun
    • Current Photovoltaic Research
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    • v.8 no.1
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    • pp.12-16
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    • 2020
  • This study investigates the degradation characteristics of different material types of ethyl vinyl acetate (EVA) and polyolefin (POE) with combining transparent backsheet. To this end, we fabricated samples with structure of glass/encapsulant/transparent backsheet for each type of encapsulants, and shingled Si modules with the same structure. The samples were then subjected to accelerated test by storing under damp heat condition of 85℃ and 85% RH. As a result, encaplsulant discoloration was observed, which the transmittance of the samples with EVA decreased in a rapid rate than the samples with POE. The discoloration also affected a power degradation of the shingled modules with a reduction of current density, resulting that the module with EVA showed more drop on the efficiency than the modules with POE. Furthermore, corrosion of the soldered ribbon caused by acetic acid produced from the degraded EVA also contributed in fill factor reduction.

Hot-carrier Induced MOSFET Degradation and its Lifetime Measurement (Hot-carrier 효과로 인한 MOSFET의 성능저하 및 동작수명 측정)

  • 김천수;김광수;김여환;김보우;이진효
    • Journal of the Korean Institute of Telematics and Electronics
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    • v.25 no.2
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    • pp.182-187
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    • 1988
  • Hot carrier induced device degradation characteristics under DC bias stress have been investigated in n-MOSFETs with channel length of 1.2,1.8 um, and compared with those of LDD structure device with same channel length. Based on these results, the device lifetime in normal operating bias(Vgs=Vds=5V) is evaluated. The lifetimes of conventional and LDD n-MOSFET with channel length of 1.2 um are estimated about for 17 days and for 12 years, respectively. The degradation rate of LDD n-MOSFET under the same stress is the lowest at n-region implnatation dose of 2.5E15 cm-\ulcorner while the substrate current is the lowest at the dose of 1E13cm-\ulcorner Thses results show that the device degradation characteristics are basic measurement parameter to find optimum process conditions in LDD devices and evaluate a reliability of sub-micron device.

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A Study on the Improvement of the Electrical Stability Versus MgO Additive for ZnO Ceramic Varistors (MgO 첨가에 따른 ZnO 세라믹 바리스터의 안정성 향상에 관한 연구)

  • 소순진;김영진;박춘배
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.15 no.5
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    • pp.398-405
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    • 2002
  • The degradation characteristics of MgO additive for the ZnO ceramic devices fabricated by the standard ceramic techniques are investigated in this study. These devices were made from basic Matsuoka's composition. Especially, MgO was added to analyze the degradation characteristics and devices were sintered in air at $1200^{\circ}C$. The conditions of DC degradation test were $115\pm2^{\circ}C$ for 12h. Using XRD and SEM, the phase and microstructure of samples were analyzed, respectively. The elemental analysis in the microstructures was performed by EDS, E-J analysis was used to determine $\alpha$. Frequency analysis was accomplished to understand the relationship between $R_G$ and $R_B$ with the electric stress at the equivalent circuit.

Characteristics of AC Hot-carrier-induced Degradation in nMOS with NO-based Gate Dielectrics (NO기반 게이트절연막 NMOS의 AC Hot Carrier 특성)

  • Chang, Sung-Keun;Kim, Youn-Jang
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.17 no.6
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    • pp.586-591
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    • 2004
  • We studied the dependence of hot-tarrier-induced degradation characteristics on nitrogen concentration in NO(Nitrided-Oxide) gate of nMOS, under ac and dc stresses. The $\Delta$V$_{t}$ and $\Delta$G$_{m}$ dependence of nitrogen concentration were observed, We observed that device degradation was suppressed significantly when the nitrogen concentration in the gate was increased. Compared to $N_2$O oxynitride, NO oxynitride gate devices show a smaller sensitivity to ac stress frequency. Results suggest that the improved at-hot carrier immunity of the device with NO gate may be due to the significantly suppressed interface state generation and neutral trap generation during stress.ess.

Nondestructive Characterization and In-situ Monitoring of Corrosion Degradation by Backward Radiated Ultrasound

  • Song, Sung-Jin;Kim, Young H.;Bae, Dong-Ho;Kwon, Sung D.
    • Corrosion Science and Technology
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    • v.4 no.3
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    • pp.114-119
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    • 2005
  • Since the degradation caused by corrosion is restricted to the surface of materials, conventional ultrasonic nondestructive evaluation methods based on ultrasonic bulk waves are not applicable to characterization of the corrosion degradation. To take care of this difficulty, a new nondestructive evaluation method that uses ultrasonic backward radiation has been proposed recently. This paper explores the potential of this newly developed method for nondestructive characterization and in-situ monitoring of corrosion degradation. Specifically, backward radiated ultrasounds from aged thermo-mechanically controlled process (TMCP) steel specimens by corrosion fatigue were measured and their characteristics were correlated to those of the aged specimens. The excellent correlation observed in the present study demonstrates the high potential of the backward radiated ultrasound as an effective tool for nondestructive characterization of corrosion degradation. In addition, the potential of the backward radiated ultrasound to in-situ monitoring of corrosion degradation is under current investigation.

A Consideration of Degradation Mechanism of a Effect of the Nitric Solution on the Aging Characteristics of the Outdoor Silicone Rubber (열화 메커니즘 규명을 위한 옥외용 실리콘고무의 산성비 성분 열화특성 연구)

  • Lee, J.H.
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2002.05b
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    • pp.132-136
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    • 2002
  • In this paper, aging characteristics of outdoor silicone rubber insulator resulting from the acid rain have been investigated with regards to nitrate ion $({NO_{3}}^{-1})$. For this purpose, silicone rubber was aged by immersing into the nitric solutions with different level pH during 1500 hours and various tests (tracking, $tan{\delta}$, breakdown voltage, SEM, EDS, contact angle) were performed. It was observed that the degradation was increased to pH 2.5 slightly and at pH 1.5 highly. And thus, it could be expected that there is certain critical point between pH 1.5 and 2.5, which leads to throught degradation.

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The Characteristics of Degraded Drain Output Resistance of NMOSFET due to Hot Electron Effects (Hot electron 효과로 노쇠화된 NMOSFET의 드레인 출력저항 특성)

  • 김미란;박종태
    • Journal of the Korean Institute of Telematics and Electronics A
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    • v.30A no.9
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    • pp.38-45
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    • 1993
  • In this study, the degradation characteristics of drain output resis-tance was described due to hot electron effects. An semi-empirical model for the degraded drain output resistance was derived from the measured device characteristics. The suggested model was verified from the measured data and the device parameter dependence was also analyzed. The degradation of drain output resistance was increased with stress time and had linear relationship with the degradation of drain current. The device lifetime which was defined by failure criteria of drain output resistance (such as $\Delta$ro/roo=5%) was equivalent to that of failure criteria of drain current (such as $\Delta$ID/ID=5%)

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Degradation Characteristics of Mobility in Channel of P-MOSFET's by Hot Carriers (핫 캐리어에 의한 피-모스 트랜지스터의 채널에서 이동도의 열화 특성)

  • 이용재
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.11 no.1
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    • pp.26-32
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    • 1998
  • We have studied how the characteristics degradation between effective mobility and field effect mobility of gate channel in p-MOSFET's affects the gate channel length being follow by increased stress time and increased drain-source voltage stress. The experimental results between effective and field-effect mobility were analyzed that the measurement data are identical at the point of minimum slope in threshold voltage, the other part is different, that is, the effective mobility it the faster than the field-effect mobility. Also, It was found that the effective and field-effect mobility. Also, It was found that the effective and field-effect mobility of p-MOSFET's with short channel are increased by decreased channel length, increased stress time and increased drain-source voltage stress.

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A Study on the Tracking Characteristics of Phenolic Resin Insulation Material Due to Accelerated Degradation (가속열화에 따른 페놀수지 절연재료의 트래킹 특성에 관한 연구)

  • Kim, Si-Kuk;Choi, Su-Gil;Lee, Chun-Ha
    • Fire Science and Engineering
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    • v.31 no.1
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    • pp.42-49
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    • 2017
  • The present article reports the tracking characteristics of phenolic resin insulation material due to accelerated degradation. For assessing insulation degradation of the phenolic resin insulation material, experiment samples with equivalent years of 0, 10, 20, 30, and 40 years were produced by conducting accelerated degradation experiments using Arrhenius equation. Subsequently, tracking experiments according to KS C IEC 60112 standard were conducted for the experiment samples that were previously subjected to accelerated degradation. According to the measured results for tracking characteristics of phenolic resin subjected to accelerated degradation, upon dropping of 0.1% ammonium chloride, the risks were shown to increase by 1.38 times for the equivalent life of 10 years; 1.45 times for 20 years; 1.62 times for 30 years; and 1.94 times for 40 years based on the equivalent life of 0 year. Upon dropping of 0.01% ammonium chloride, the risks were shown to increase by 1.39 times for the equivalent life of 10 years; 1.52 times for 20 years; 1.99 times for 30 years; and 5.30 times for 40 years. According to the experimental results, the tracking risk was shown to be higher for longer-duration insulation degradation due to aging. In particular, the risk was observed to be greatly increased in the case of the equivalent life of 40 years. Therefore, it is proposed that the occurrence possibility and the risk of electric fires could be minimized through institutional preparation of recommended replacement period by considering risks such as insulation degradation, etc. due to aging.

A Study on the characteristics of degradation sensor for insulation oil (절연유(絶緣油) 열화(劣化)센서 특성(特性) 연구(硏究))

  • Chon, Y.K.;Sun, J.H.;Kang, D.S.;Joo, B.S.;Yoon, J.Y.;Chung, S.J.
    • Proceedings of the KIEE Conference
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    • 1995.07c
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    • pp.1371-1374
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    • 1995
  • It is well known that the degradation of transformer oil conseqently lead to the failure of transformer. This paper discussed the characteristics of the degradation sensor checking transformer oil condition in live line. The degadation sensor is composed of base ring, electrodes and porous ceramic, passed through the transformer oil and checks the transformer oil condition through sensor's leakage current. So it is important to minimize the leakage current of base ring and connection parts. To investigate the leakage current of base ring and connection parts the characteristics of V-T-I and DC 2 KV and other examinations were performed. It is verified that ionized transformer oil caused by the expansion of temperature increases in the leakage current of porous ceramic sensor. It is certification that the leakage current of other parts of porous ceramic is very small(about 2%) compared with the porous ceramic body and it is confirmed that the leakage current in porous ceramic is changed sensitively according to the new oil(NO) and and the degradation oil(DO).

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