• 대한전자공학회:학술대회논문집
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• 대한전자공학회 2004년도 학술대회지
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• pp.717-722
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• 2004

A design was done, and all characteristic of photodetectr of the web pattern type which a standard process of the Bipolar which Si PIN structure was used in this paper, and was used for the current amplifier design was used, and high-speed, was used as receiving optcal area of high altitude, and the module which had a low dark current characteristic was implemented with one chip with a base. Important area decreases an area of Ie at the time of this in order to consider an electrical characteristic and economy than the existing receiving IC, and performance of a product and confidence are got done in incense. First of all, the receiving IC which a spec, pattern of a wafer to he satisfied with the following electrical optical characteristic that produced receiving IC of 5V and structure are determined, and did one-chip is made. On the other hand, the time when AR layer of double is $Si_{3}N_{4}/SiO_{2}=1500/1800$ has an optical reflectivity of less than $10{\%}$ on an incidence optical wavelength of 660 ,and, in case of photo detector which reverse voltage made with 1.8V runs in 1.65V, an error about a change of thickness is very the thickness that can be improved surely. And, as for the optical current characteristic, about 5 times increases had the optical current with 274nA in 55nA when Pc was -27dBm. A BJT process is used, and receiving IC running electricity suitable for low voltage and an optical characteristic in minimum 1.8V with a base with two phases is made with one chip. IC of low voltage operates in 1.8V and 3.0V at the same time, and optical link receiving IC is going to be implemented

• 대한전기학회논문지:전기물성ㆍ응용부문C
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• 제55권5호
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• pp.272-277
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• 2006

The present study is devoted to investigate numerically the optical characteristics of multi-layer thin film structures such as $Si/SiO_2\;and\;Ge/Si/SiO_2$ by using the characteristics transmission matrix method. The reflectivity and the absorptivity rate for thin film structures are estimated for different incident angles of rays and various film thicknesses. In addition, the influence of wavelength on optical characteristics related to complex refractive index is examined. It is found that such wave-like characteristics are observed in predicting reflectivities and depends mainly on film thickness. Moreover, the present study predicts the film thickness for ignoring wave interference effects, and it also discusses the fundamental physics behind optical and energy absorption characteristics appearing in multi-layer thin film structures.

• 한국광학회:학술대회논문집
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• 한국광학회 2000년도 제11회 정기총회 및 00년 동계학술발표회 논문집
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• pp.14-15
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• 2000

We study the microwave characteristics of traveling-wave photodetector using the finite-difference time-domain method. We present two parameters for design, the width of PIN region and the thickness of i-layer, and analyze TWPD's property in frequency domain.

• 한국자기학회지
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• 제4권3호
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• pp.249-255
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• 1994

광자기 기록매체의 구조를 유전체층과 반사층을 이용하여 다층화 함으로써 자기광학 효과를 증대할 수 있다는 것은 알려진 사실이다. 본 연구에서는 희토-천이금속 합금박막의 대표적인 재질인 TbFeCo 를 기록층으로 한 다층구조에서 Kerr 회전각, 타원율, 반사도 및 Figure of merit을 Characteristic Matrix 를 사용하여 컴퓨터 프로그램으로 작성하고 이론적 계산을 하였다. Photodiode의 Shot Noise만 고려하였을 때 SNR과 비례관계에 있는 Figure of Merit과 반사도를 기준으로 하여 Bilayer, Trilayer 및 Quadrilayer 구 조에서 최적의 두께조합을 결정하였다.

• 한국전기전자재료학회논문지
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• 제13권12호
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• pp.1051-1057
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• 2000

A traveling-wave CPW(coplanar waveguide) electrode with abruptly broken input/output-taper for LiNbO$_3$optical modulator was designed and fabricated. The electrical characteristics of traveling-wave electrode on z-cut LiNbO$_3$crystal with SiO$_2$buffer layers were measured by network analyzer. To confirm the possibility of the electro-optic modulator electrode, detailed calculations of the impedance, microwave effective index and attenuation constants are presented as a function of the microwave electrode thickness, but the buffer layer thickness is fixed as 1${\mu}{\textrm}{m}$. These characteristics are discussed from the viewpoint of the device optimization and are expected to be design guides for the LiNbO$_3$modulator’s electrodes.

• 한국전기전자재료학회논문지
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• 제30권11호
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• pp.740-744
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• 2017

Herein we studied the electrical and optical properties of indium tin oxide ITO/Ag/ITO multilayer thin films for application in transparent conducting electrodes. The ITO and Ag thin films were deposited onto soda lime glass (SLG) using radiofrequency and DC-sputtering methods, respectively. The as-synthesized ITO/Ag/ITO multilayer thin films were analyzed using 4-point probe, UV-Visible spectroscopy, and Hall measurement. We observed a rapid increase in electron concentration with increasing Ag thickness. However, electron mobility decreased with increasing Ag thickness. Finally, ITO/Ag/ITO multilayer thin films showed a characteristic low sheet resistance of $18{\Omega}/sq$ and high optical transmittance value (80%) with variation of Ag thickness (5~10 nm).

• 대한기계학회논문집
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• 제17권10호
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• pp.2582-2589
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• 1993

Transient heat transfer characteristics of cooling of a spherical body were investigated in the radiatively active spherical medium. Initially the spherical body and the medium were maintained at their constant temperatures. Then heat transfer begins from spherical body t medium. The heat transfer mode inside the spherical body is just conduction. But heat is transferred by both conduction and radiation inside the medium. All thermodynamic properties were held constant in time. Spherical symmetry is assumed. DOM was adopted to solve RTE. The effect of characteries-tic optical thickness, conduction to radiation parameters, and solid surface emissivity has been studied.

• 전기학회논문지
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• 제56권12호
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• pp.2202-2207
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• 2007

The present article investigates experimentally and theoretically thermal and optical characteristics of thin film structures through measurement of thermal conductivity of Pyrex 7740 and reflectance in silicon thin film. The $3{\omega}$ method is used to measure thermal conductivity of very thin film with high accuracy and the optical characteristics in thin films are studied to examine the influence of incidence angle of light on reflectance by using the CTM(Characteristics Transmission Method) and the 633 nm He-Ne laser reflectance measurement system. It is found that the estimated reflectance of silicon show good agreement with experimental data. In particular, the present study solves the EPRT(Equation of Phonon Radiative Transport) which is based on Boltzmann transport equation for predicting thermal conductivity of nanoscale film structures. From the results, the measured thermal conductivity is in good agreement with the previous published data. Moreover, thermal conductivities are estimated for different film thickness. It indicates that as film thickness decreases, thermal conductivity decreases substantially due to internal scattering.

• 한국기계가공학회지
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• 제15권6호
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• pp.95-100
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• 2016

We suggest and simulate an optical filter that a red wavelength range cannot transmit to protect the psychological stress that originates from the cognition of red color in emergency medical technicians. When a nanohole hexagonal array is fabricated on gold film using Anodic Aluminum Oxide (AAO), the blocked wavelength can be tuned by the hole diameter and film thickness. The characteristic of the transmittance for normal incident white light is simulated with Finite Element Method (FEM) in the MATLAB platform. Although the transmittance of the overall wavelength is reduced by 50% by the gold film, the transmittance of the red wavelength range is decreased by over 87%.

• 한국전기전자재료학회논문지
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• 제24권9호
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• pp.750-754
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• 2011

In this research, the electric characteristic of organic light-emitting diodes(OLEDs) was studied depending on thickness of amorphous fluoropolymer(Teflon-AF) which is the material of hole injection layer to improve electric characteristic of OLEDs. Sample composition was fabricated in double layer. The basic structure was fabricated by ITO/tris(8-hydroxyquinoline) aluminum (Alq3)/Al and the 2 layer was fabricated by ITO/2,2-Bistrifluoromethyl-4,5-Difluoro-1,3-Dioxole(Teflon-AF)/tris(8-hydro xyquinoline) aluminum (Alq3)/Al. The experiment was carried with variation of thickness of Teflon-AF at 1.0, 2.0, 2.5, 3.0 nm. The result showed when Teflon-AF thickness was 2.5 nm, the electric and optical characteristic were well performed. Moreover, when it was compared with Teflon-AF without materials, it was improved 15.1 times more on luminance, 12.7 times more on luminous efficiency and 12.1 times more on external quantum efficiency. Therefore, OLEDs element with optimum hole injection layer reduced energy barrier and driving voltage, and confirmed that it improved efficiency widely.