• 제목/요약/키워드: channeling

검색결과 126건 처리시간 0.023초

Health as spiritual and virtuous harmony with compassion and vital energy

  • Pang, Keum-Young
    • Advances in Traditional Medicine
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    • 제4권3호
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    • pp.137-156
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    • 2004
  • Altruistic virtuous caring, possibly originated from religion and/or spirituality, is indispensable for holistic health through channeling vital energy with diet, exercise and meditation. This is a participant-observed medical anthropological research of a first generation Korean elderly immigrant health professional woman living in a four generational family. She had hypertension and was concerned about possible attack of stroke. Multi-religious, spiritual, and cosmological vital energy based on holistic Nature-oriented health beliefs and practices influenced by psychosocial, cultural and economic background, education, self- discipline and self-cultivation of individual, and group or family may create health. Self-care beliefs based on confidence in self-control of one's life style for oneself and others influence individual and group health practice. The holistic alternative health beliefs and practices were proved to be efficacious and beneficial by her self-evaluation, evaluation of significant others, biomedical professionals, and laboratory tests. That may have potential application for global health.

증착된 비정질 실리콘층을 통한 As-Preamorphization 방법으로 형성된 소오스/드레인을 갖는 deep submicron PMOSFET의 제작 (Fabrication of deep submicron PMOSFET with the source/drain formed by the mothod of As-Preamorphization though the predeposited amorphous Si layer)

  • 권상직;김여환;신영화;김종준;이종덕
    • 전자공학회논문지A
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    • 제32A권6호
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    • pp.51-58
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    • 1995
  • Major limiting factors in the linear scaling down of the shallow source/drain junction are the boron channeling effect and the Si cosumption phenomenon during silicidation. We can solve these problems by As preamorphization of the predeposited amorphous Si layer. The predeposited amorphous Si layer made the junction depth decrease to nearly the thickness value of the layer and was effectively utilized as the cosumed Si source during Ti silicidation. This method was applied to the actual fabrication of PMOSFET through SES (selectricely etched Si) techology.

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Remedation of petroleum impacted filled land using of various in situ technology

  • 안훈기;김재형;고경연;서형기;임은진
    • 한국지하수토양환경학회:학술대회논문집
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    • 한국지하수토양환경학회 2004년도 임시총회 및 추계학술발표회
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    • pp.286-289
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    • 2004
  • On site, In situ soil remediation technologies are very important among the remediation technologies and in general efficiency of these technologies are turned to site characterization and environmental condition. specially using of only one technology has so many limitation factors. for example, existing state of tailing and channeling and so on. actually, filled land have high concentration cation exchange capacity because of existence in abundance soil organic matter. Therefore we used various on site in Situ technologies by phase for overcome the limitation factors. Target site is petroleum (diesel) impacted filled land and using technologies are SVE(Soil Vapor Extraction), BV(Bioventing), Bioremediation, Soil flushing, Chemical oxidation.

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사무자동화(OA) 추진전략과 성과의 관계에 대한 실증적연구 (An Empirical Study on OA Propulsion Strategy and Performance)

  • 전용진
    • 한국경영과학회지
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    • 제17권1호
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    • pp.85-106
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    • 1992
  • Much attention currently is being aimed to OA (office automation). OA has a potential for improving management decision making as well as increasing productivity of secretarial and clerical workers. This study construct a model that may be useful to the OA manager, in channeling OA efforts in the right direction. The purpose of this study is to analyze the improtance of critical success strategy for OA implementation, to test 5 hypotheses and 11 subsidiary hypothese of organizational characteristics and OA propulsion characteristics, and to suggest and evaluate a cussess strategy for OA implementation. The population consists of the Korean business in Seoul, 292 response of the 1000 questionaires were available and analyzed. The analytical methods are adopted on the frequency analysis to analyze the general characteristics, the one-way ANOVA, the Pearson's correlation analysis, the regression analysis for the test of the hypotheses.

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Efficient Multicast Tree Construction in Wireless Mesh Networks

  • Nargesi, Amir-Abbas;Bag-Mohammadi, Mozafar
    • Journal of Communications and Networks
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    • 제16권6호
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    • pp.613-619
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    • 2014
  • Multicast routing algorithms designed for wireline networks are not suitable for wireless environments since they cannot efficiently exploit the inherent characteristics of wireless networks such as the broadcast advantage. There are many routing protocols trying to use these advantages to decrease the number of required transmissions or increase the reception probability of data (e.g., opportunistic routing).Reducing the number of transmissions in a multicast tree directly decreases the bandwidth consumption and interference and increases the overall throughput of the network. In this paper, we introduce a distributed multicast routing protocol for wireless mesh networks called NCast which take into account the data delivery delay and path length when constructing the tree. Furthermore, it effectively uses wireless broadcast advantage to decrease the number of forwarding nodes dynamically when a new receiver joins the tree.Our simulation results show that NCast improves network throughput, data delivery ratio and data delivery delay in comparison with on demand multicast routing protocol. It is also comparable with multichannel multicast even though it does not use channeling technique which eliminates the interference inherently.

실리콘에 MaV로 이온주입된 인의 결함분포와 profile에 관한 연구 (A Study of defect distribution and profiles of MeV implanted phosphorus in silicon)

  • 정원채
    • E2M - 전기 전자와 첨단 소재
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    • 제10권9호
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    • pp.881-888
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    • 1997
  • This study demonstrats the profiles of phosphorus ions in silicon by MeV implantation(1∼3 MeV). Implanted profiles could be measured by SIMS(Cameca 4f) and compared with simulation results(TRIM program and analytical description method only using on Pearson function). The experimental result in the peak concentration region has a little bit deviation from simulation data. By RBS and Channeling measurements the defect distribution of implanted samples could be measured and spectrum are calibrated depth with RUMP simulation By XTEM measurement the thickness of defect zone also could be measured. Finally thermal annealing for the electrical activation of implanted ions carried out by RTA(rapid thermal annealing). The concentration-depth profiles after heat treatment was measured by SR(spreading resistance)-method.

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Phenomenological monte carlo simulation model for predicting B, $BF_2$, As, P and Si implant profiles in silicon-based semiconductor device

  • Kwon, Oh-Kuen;Son, Myung-Sik;Hwang, Ho-Jung
    • Journal of Korean Vacuum Science & Technology
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    • 제3권1호
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    • pp.1-9
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    • 1999
  • This paper presents a newly enhanced damage model in Monte Carlo (MC) simulation for the accurate prediction of 3-Dimensional (3D) as-implanted impurity and point defect profiles induced by ion implantation in (100) crystal silicon. An empirical electronic energy loss model for B, BF2, As, P and Si self implant over the wide energy range has been proposed for the ULSI device technology and development. Our model shows very good agreement with the SIMS data over the wide energy range. In the damage accumulation, we considered the self-annealing effects by introducing our proposed non-linear recomvination probability function of each point defect for the computational efficiency. For the damage profiles, we compared the published RBS/channeling data with our results of phosphorus implants. Our damage model shows very reasonable agreement with the experiments for phosphorus implants.

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고에너지 이온선을 이용한 분석 기술

  • 김효배;송종한;김희중
    • 한국자기학회지
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    • 제6권2호
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    • pp.122-129
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    • 1996
  • Fig. 1에서 보는 바와 같이 수 MeV의 에너지를 가진 입사이온이 고체 시료표면과 충돌했을 때 여러 가지의 상호작용과 과정들이 일어난다. 입사 아온이 표적원자의 원자가전자나 내각전자와 상호작용을 하였을 때 원자를 여기시키거나 이온화시키게 되며 입사 이온이 표적 핵과 매우 가까이 접근했을 때 입사이온과 표적 핵사이에 쿨롱상호작용이나 핵 상호작용이 일어나게 된다. 이러한 여러가지 상호작용의 결과들로부터 분석하고자 하는 시료의 성분, 구조, 상호작용 과정에 대한 정보를 얻을 수 있다. 이러한 고에너지 이온선을 이용한 분석기술로는 Fig. 1에서 보는 바와 같이 후방산란법(BS : Backscattering Spectrometry), 전방산란법(FRS : Forward Recoil Spectrometry), 핵반응법(NRA : Nuclear Reaction Analysis), 양성자여기X선검출법(PIXE : Proton Induced X-ray Emission)등과 이러한 방법들과 같이 조합하여 사용하는 이온 채널링(ion channeling)등이 있다. 본 해설에서는 이러한 분석법중에서도 널리 사용되고 있는 후방산란법과 이온 채널링에 대하여 주로 기술하고자 한다.

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산란 및 투과된 수소 이온의 분자 전산 연구 III. 니켈 (100) 표면 층의 운동에너지 (Molecular Simulation Studies of Scattered and Penetrated Hydrogen Ions III. Kinetic Energies in Ni (100) layers)

  • 서승혁;민웅기
    • 한국수소및신에너지학회논문집
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    • 제12권3호
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    • pp.191-199
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    • 2001
  • In this paper molecular dynamics simulations have been carried out to investigate energy and momentum transfer of hydrogen ions impacted on the Ni (100) surface with $45^{\circ}$ and $90^{\circ}$ incident angles. The initial kinetic energies of the hydrogen ion were ranged from 100 eV to 1,600 eV to study the layer-by-layer energy variation as a dependence of incident energies and angles. At low incident energies, the scattering energy transfer is dominated by the normal motion of surface layers due to thermal vibrations and multiple collision effects. For higher incident energies, the scattering energy transfer in a normal direction is greater than that in a parallel direction. In the case of penetration, the amount of transferred energies do not affect much on Ni layers at low incident energy. It was found channeling effects through Ni layers with increasing incident energies.

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산란 및 투과된 수소 이온의 분자 전산 연구 II. 니켈 (100) 표면의 45° 입사 (Molecular Simulation Studies of Scattered and Penetrated Hydrogen Ions II. 45° Incident Angle to Ni (100) Surface)

  • 서승혁;민웅기
    • 한국수소및신에너지학회논문집
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    • 제12권1호
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    • pp.51-63
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    • 2001
  • In this paper molecular dynamics simulations were employed to investigate the structural and dynamic properties of hydrogen ions impacted on the Ni (100) surface with the $45^{\circ}$ incident angle. The initial kinetic energies of the hydrogen ion range from 100 to 1,600 eV. Together with the trajectory visualization of hydrogen ions, we computed scattering and penetration yields, mean energies and angles, and probability and energy distributions as a function of longitudinal and azimuthal directions. In the case of lower energy scattering ions, the multiple collision effects were found to be important to the third layers or lower. For higher energy penetrating ions, compared with the normal incident angle, it was significant the effective channeling effects through the Ni layers and the angle dependencies were indicated both in the longitudinal and the azimuthal angle directions.

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