• 제목/요약/키워드: channel properties

검색결과 959건 처리시간 0.031초

LED-ID용 간섭채널환경하에서의 단극형 ZCD확산코드 적용 기법에 관한 연구 (A Study of applying Method of Unipolar-ZCD Spreading Code for LED-ID in Interference Environment)

  • 차재상;김진영;장영민;김종태;이경근;문경환
    • 한국인터넷방송통신학회논문지
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    • 제10권6호
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    • pp.275-280
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    • 2010
  • 최근 본 논문의 저자들은 국내에 LED 조명에 ID(Identification)를 부여하여 위치인식 기능을 수행하는 LED-ID 기술을 처음 제안하고 이에 대한 연구를 본격적으로 개시하였다. LED-ID가 적용될 수 있는 통신채널은 표면의 반사파로 인한 다중경로 간섭 성분이 존재하며 ID를 위하여 직교코드를 부여할 경우, 코드들의 상호상관에 의한 간섭성분이 존재하므로 이에 대한 해결방안이 요구되어 진다. 본 논문에서는 직교코드기반의 LED-ID 방식을 가정하였을 경우, 실내(Indoor)채널 환경에서 전송채널의 시간지연으로 인한 다중경로 간섭성분을 확산코드의 상관특성만으로 해결하여 높은 QoS(Quality of Service)를 확보할 수 있는 Unipolar ZCD(Zero Correlation Duration)확산코드 기반의 OOK(On-Off Keying)-CDMA(Code Division Multiple Access)기법을 저간섭 LED-ID기법으로 제안하고, 실내채널 환경에서의 모의실험을 통한 성능평가를 통해 제안한 시스템의 유용성을 입증하였다.

게이트 절연특성에 의존하는 양방향성 박막 트랜지스터의 동작특성 (Electrical Characteristics of Ambipolar Thin Film Transistor Depending on Gate Insulators)

  • 오데레사
    • 한국정보통신학회논문지
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    • 제18권5호
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    • pp.1149-1154
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    • 2014
  • 본 연구는 산화물반도체트랜지스터의 터널링 현상을 살펴보기 위해서 게이트 절연막으로서 SiOC 박막을 사용하고 채널층으로 IGZO를 이용하여 트랜지스터를 제작 하였다. SiOC 박막은 분극이 작아질수록 비정질특성이 우수해지면서 절연특성이 좋아진다. SiOC 게이트 절연막과 채널 층 사이의 계면에 존재하는 접합특성은 SiOC의 분극특성에 따라서 달려졌다. 드레인소스 전류($I_{DS}$)와 게이트소스 전압($V_{GS}$)의 전달특성은 분극이 낮은 SiOC를 사용할 경우 양방향성 전달특성이 나타나고 분극이 높은 SiOC 게이트 절연막을 사용할 경우 단방향성 전달 특성이 나타났다. 터널링에 의한 양방향성 트랜지스터의 경우 바이어스 인가 전압이 낮은 ${\pm}1V$의 영역에서 쇼키접합을 나타냈었지만 트래핑효과에 의한 단방향성 트랜지스터의 경우 오믹접합 특성을 나타내었다. 특히 양방향성 트랜지스터의 경우 터널링 현상에 의하여 on/off 스위칭 특성이 개선되었다.

Investigation of Stereo-dynamic Properties for the Reaction H+HLi by Quasi-classical Trajectory Approach

  • Wang, Yuliang;Zhang, Jinchun;Jiang, Yanlan;Wang, Kun;Zhou, Mingyu;Liang, Xiaorui
    • Bulletin of the Korean Chemical Society
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    • 제33권9호
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    • pp.2873-2877
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    • 2012
  • Quasi-classical trajectory (QCT) calculations of H+HLi reaction have been carried out on a new potential energy surface of the ground state reported by Prudente et al. [Chem. Phys. Lett. 2009, 474, 18]. The four polarization-dependent differential cross sections have been carried out in the center of mass (CM) frame at various collision energies. The reaction probability for the depletion channel has been studied over a wide collision energy range. It has been found that the collision energy decreases remarkably reaction probability, which shows the expected behavior of the title reaction belonging to an exothermic barrierless reaction. The results are in good agreement with previous RMP results. The P(${\theta}_r$), P(${\phi}_r$) and P(${\theta}_r,\;{\phi}_r$) distributions, the k-k'-j' correlation and the angular distribution of product rotational vectors are presented in the form of polar plots. The average rotational alignment factor <$P_2(j{\prime}{\cdot}k)$> as a function of collision energy is also calculated. The results indicate that the collision energy has a great influence on the polarization of the product rotational angular momentum vector j'.

동질 영역의 기울기를 고려한 상보 쿼드트리 (A Complementary Quadtree in Consideration for Gradient of Homogeneous Regions)

  • 김신진;이종엽;김영모;고광식
    • 대한전자공학회논문지SP
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    • 제39권3호
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    • pp.36-41
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    • 2002
  • 만화 영상은 비교적 간단하고, 사용 색상의 수가 적으며 동일 색상이나 기울기를 가지는 동질 영역(homogeneous region)이 많이 존재한다. 본 논문에서는 이런 특징을 이용하여 만화 이미지에 효과적인 상보 쿼드트리 압축 방법을 제안하였다. 그리고 영상의 점진전송이 가능하게 하여, 데이터의 전송이 진행되는 동안 수신측에서는 낮은 해상도의 영상에서부터 점진적으로 더 높은 해상도의 영상으로 해상도를 향상시켜 나가게 한다. 이것은 데이터 전송의 초기에 영상의 가치를 판단하여 나머지 부분의 전송을 진행하거나 취소할 수 있어 제한된 전송 대역을 효과적으로 이용할 수 있다. 제안된 방법이 비손실의 점진전송이 가능한 방법이므로 이와 같은 기능을 가진 progressive PNG, progressive GIF와 압축 성능을 비교 하였다.

Improved Flyweight RFID Authentication Protocol

  • Vallent, Thokozani Felix;Yoon, Eun-Jun;Kim, Hyunsung
    • IEIE Transactions on Smart Processing and Computing
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    • 제1권2호
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    • pp.95-105
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    • 2012
  • The widespread implementation of RFID in ubiquitous computing is constrained considerably by privacy and security unreliability of the wireless communication channel. This failure to satisfy the basic, security needs of the technology has a direct impact of the limited computational capability of the tags, which are essential for the implementation of RFID. Because the universal application of RFID means the use of low cost tags, their security is limited to lightweight cryptographic primitives. Therefore, EPCGen2, which is a class of low cost tags, has the enabling properties to support their communication protocols. This means that satisfying the security needs of EPCGen2 could ensure low cost security because EPCGen2 is a class of low cost, passive tags. In that way, a solution to the hindrance of low cost tags lies in the security of EPCGen2. To this effect, many lightweight authentication protocols have been proposed to improve the privacy and security of communication protocols suitable for low cost tags. Although many EPCgen2 compliant protocols have been proposed to ensure the security of low cost tags, the optimum security has not been guaranteed because many protocols are prone to well-known attacks or fall short of acceptable computational load. This paper proposes a remedy protocol to the flyweight RFID authentication protocol proposed by Burmester and Munilla against a desynchronization attack. Based on shared pseudorandom number generator, this protocol provides mutual authentication, anonymity, session unlinkability and forward security in addition to security against a desynchronization attack. The desirable features of this protocol are efficiency and security.

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Investigating InSnZnO as an Active Layer for Non-volatile Memory Devices and Increasing Memory Window by Utilizing Silicon-rich SiOx for Charge Storage Layer

  • Park, Heejun;Nguyen, Cam Phu Thi;Raja, Jayapal;Jang, Kyungsoo;Jung, Junhee;Yi, Junsin
    • 한국진공학회:학술대회논문집
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    • 한국진공학회 2016년도 제50회 동계 정기학술대회 초록집
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    • pp.324-326
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    • 2016
  • In this study, we have investigated indium tin zinc oxide (ITZO) as an active channel for non-volatile memory (NVM) devices. The electrical and memory characteristics of NVM devices using multi-stack gate insulator SiO2/SiOx/SiOxNy (OOxOy) with Si-rich SiOx for charge storage layer were also reported. The transmittance of ITZO films reached over 85%. Besides, ITZO-based NVM devices showed good electrical properties such as high field effect mobility of 25.8 cm2/V.s, low threshold voltage of 0.75 V, low subthreshold slope of 0.23 V/dec and high on-off current ratio of $1.25{\times}107$. The transmission Fourier Transform Infrared spectroscopy of SiOx charge storage layer with the richest silicon content showed an assignment at peaks around 2000-2300 cm-1. It indicates that many silicon phases and defect sources exist in the matrix of the SiOx films. In addition, the characteristics of NVM device showed a retention exceeding 97% of threshold voltage shift after 104 s and greater than 94% after 10 years with low operating voltage of +11 V at only 1 ms programming duration time. Therefore, the NVM fabricated by high transparent ITZO active layer and OOxOy memory stack has been applied for the flexible memory system.

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Ka-밴드 구름레이더 자료품질 및 구름통계 기초연구 (Preliminary Analysis of Data Quality and Cloud Statistics from Ka-Band Cloud Radar)

  • 예보영;이규원;권수현;이호우;하종철;김연희
    • 대기
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    • 제25권1호
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    • pp.19-30
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    • 2015
  • The Ka-band cloud radar (KCR) has been operated by the National Institute of Meteorological Research (NIMR) of Korea Meteorological Administration (KMA) at Boseong National Center for Intensive Observation of severe weather since 2013. Evaluation of data quality is an essential process to further analyze cloud information. In this study, we estimate the measurement error and the sampling uncertainty to evaluate data quality. By using vertically pointing data, the statistical uncertainty is obtained by calculating the standard deviation of each radar parameter. The statistical uncertainties decrease as functions of sampling number. The statistical uncertainties of horizontal and vertical reflectivities are identical (0.28 dB). On the other hand, the statistical uncertainties of Doppler velocity (spectrum width) are 2.2 times (1.6 times) larger at the vertical channel. The reflectivity calibration of KCR is also performed using X-band vertically pointing radar (VertiX) and 2-dimensional video disdrometer (2DVD). Since the monitoring of calibration values is useful to evaluate radar condition, the variation of calibration is monitored for five rain events. The average of calibration bias is 10.77 dBZ and standard deviation is 3.69 dB. Finally, the statistical characteristics of cloud properties have been investigated during two months in autumn using calibrated reflectivity. The percentage of clouds is about 26% and 16% on September to October. However, further analyses are required to derive general characteristics of autumn cloud in Korea.

Surface Preparation of III-V Semiconductors

  • 임상우
    • 한국진공학회:학술대회논문집
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    • 한국진공학회 2015년도 제49회 하계 정기학술대회 초록집
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    • pp.86.1-86.1
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    • 2015
  • As the feature size of Si-based semiconductor shrinks to nanometer scale, we are facing to the problems such as short channel effect and leakage current. One of the solutions to cope with those issues is to bring III-V compound semiconductors to the semiconductor structures, because III-V compound semiconductors have much higher carrier mobility than Si. However, introduction of III-V semiconductors to the current Si-based manufacturing process requires great challenge in the development of process integration, since they exhibit totally different physical and chemical properties from Si. For example, epitaxial growth, surface preparation and wet etching of III-V semiconductors have to be optimized for production. In addition, oxidation mechanisms of III-V semiconductors should be elucidated and re-growth of native oxide should be controlled. In this study, surface preparation methods of various III-V compound semiconductors such as GaAs, InAs, and GaSb are introduced in terms of i) how their surfaces are modified after different chemical treatments, ii) how they will be re-oxidized after chemical treatments, and iii) is there any effect of surface orientation on the surface preparation and re-growth of oxide. Surface termination and behaviors on those semiconductors were observed by MIR-FTIR, XPS, ellipsometer, and contact angle measurements. In addition, photoresist stripping process on III-V semiconductor is also studied, because there is a chance that a conventional photoresist stripping process can attack III-V semiconductor surfaces. Based on the Hansen theory various organic solvents such as 1-methyl-2-pyrrolydone, dimethyl sulfoxide, benzyl alcohol, and propylene carbonate, were selected to remove photoresists with and without ion implantation. Although SPM and DIO3 caused etching and/or surface roughening of III-V semiconductor surface, organic solvents could remove I-line photoresist without attack of III-V semiconductor surface. The behavior of photoresist removal depends on the solvent temperature and ion implantation dose.

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Scattering characteristics of metal and dielectric optical nano-antennas

  • Ee, Ho-Seok;Lee, Eun-Khwang;Song, Jung-Hwan;Kim, Jinhyung;Seo, Min-Kyo
    • 한국진공학회:학술대회논문집
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    • 한국진공학회 2015년도 제49회 하계 정기학술대회 초록집
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    • pp.76.1-76.1
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    • 2015
  • Optical resonances of metallic or dielectric nanoantennas enable to effectively convert free-propagating electromagnetic waves to localized electromagnetic fields and vice versa. Plasmonic resonances of metal nanoantennas extremely modify the local density of optical states beyond the optical diffraction limit and thus facilitate highly-efficient light-emitting, nonlinear signal conversion, photovoltaics, and optical trapping. The leaky-mode resonances, or termed Mie resonances, allow dielectric nanoantennas to have a compact size even less than the wavelength scale. The dielectric nanoantennas exhibiting low optical losses and supporting both electric and magnetic resonances provide an alternative to their metallic counterparts. To extend the utility of metal and dielectric nanoantennas in further applications, e.g. metasurfaces and metamaterials, it is required to understand and engineer their scattering characteristics. At first, we characterize resonant plasmonic antenna radiations of a single-crystalline Ag nanowire over a wide spectral range from visible to near infrared regions. Dark-field optical microscope and direct far-field scanning measurements successfully identify the FP resonances and mode matching conditions of the antenna radiation, and reveal the mutual relation between the SPP dispersion and the far-field antenna radiation. Secondly, we perform a systematical study on resonant scattering properties of high-refractive-index dielectric nanoantennas. In this research, we examined Si nanoblock and electron-beam induced deposition (EBID) carbonaceous nanorod structures. Scattering spectra of the transverse-electric (TE) and transverse-magnetic (TM) leaky-mode resonances are measured by dark-field microscope spectroscopy. The leaky-mode resonances result a large scattering cross section approaching the theoretical single-channel scattering limit, and their wide tuning ranges enable vivid structural color generation over the full visible spectrum range from blue to green, yellow, and red. In particular, the lowest-order TM01 mode overcomes the diffraction limit. The finite-difference time-domain method and modal dispersion model successfully reproduce the experimental results.

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Glass Infiltration법에 의한 $Al_2O_3$/Glass/$Al_2O_3$ 세라믹스의 소결거동 및 유전특성 (Sintering Behavior and Dielectric Properties of $Al_2O_3$/Glass/$Al_2O_3$ Ceramics by Glass Infiltration)

  • 조태진;여동훈;신효순;홍연우;김종희;조용수
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2009년도 하계학술대회 논문집
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    • pp.177-177
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    • 2009
  • 이동통신 시스템의 소형화 경량화 다기능화 추세에 따라 세라믹 모듈의 정밀도 및 집적도가 중요한 요소로 부각되고 있다. 이러한 모듈의 고집적화 추세에 대응하기 위하여 세라믹 소성시 수축율 제어가 필수적인 요소로 부각되고 있으며, 이에 따라 X, Y축의 소성 수축율을 0에 근접하게 제어하는 무수축 소성 기술이 요구되고 있다. 선행연구를 통하여 $Al_2O_3$/Glass/$Al_2O_3$ 구조의 glass infiltration법에 의한 무수축 소성 기술 구현 가능성을 확인하였으나, 아직 해결해야 할 문제점들이 있다. glass가 $Al_2O_3$층으로 infiltration되는 과정에서 glass층이 de-lamination 되는 결함이 발견되었으며 이는 유전체 기판의 Q값을 낮추고 기판의 신뢰성에 악영향을 줄 수 있어 이에 대한 개선이 필요한 실정이다. 본 연구에서는 $Al_2O_3$/Glass/$Al_2O_3$ 구조의 glass infiltration법에 의한 선행 실험에서 관찰된 기판 내부의 de-lamination 현상에 대한 원인을 규명하고 해결책을 제시하고자 하였다. glass 유동과 바인더 burn-out이 동시에 진행됨에 따라 기공이 생성되며 glass가 점성유동함에 따라 이 기공이 glass층으로 모이게 되어 de-lamination 현상이 발생하는 것으로 사료된다. 이를 해결하기 위하여 de-lamination층에 $Al_2O_3$의 tamping을 시도하여 glass층의 기공이 빠져 나갈 수 있는 channel 을 형성하고, 남아있는 기공을 $Al_2O_3$로 채우는 효과를 얻을 수 있었다. 이에 따라 기판의 밀도와 Quality factor 값이 향상되었으며 미세구조가 치밀한 무수축 기판을 제작할 수 있었다.

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