• The Transactions of the Korean Institute of Electrical Engineers B
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• v.53 no.6
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• pp.380-387
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• 2004

In accordance with the computerization of railway signaling systems, the interface link between the signaling systems has been replaced by a digital communication channel. At the same time, the importance of the communication link has become increasingly significant. However, there are some questionable matters in the current state of railway signaling systems in KNR. First, different communication protocols have been applied to create an interface between railway signaling systems although the protocols have the same functions. Next, the communication protocols currently used in the railway fields have some illogical parts such as structure, byte formation, error correction scheme, and so on. To solve these matters, the standard communication protocol for railway signaling systems is designed. The newly designed protocol is overviews in this paper. And the simulation is performed to analysis the performance of data link control for designed protocol. According to this simulation, it is identified that the link throughput of new protocol is improved about 10% and the frame error rate is improved than existing protocol. And it is verified the safety and liveness properties of designed protocol by using a formal method for specifying the designed protocol. It is expected that there will be an increase in safety, reliability and efficiency in terms of the maintenance of the signaling systems by using the designed communication protocol for railway signaling.

• Journal of Electrical Engineering and Technology
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• v.5 no.2
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• pp.329-336
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• 2010

The paper describes the electrical and optical properties of underwater discharges in highly inhomogeneous electric fields caused by 1.2/50 ${\mu}s$ impulse voltages as functions of the polarity and amplitude of the applied voltage, and various water conductivities. The electric fields are formed by a point-to-plane electrode system. The formation of air bubbles is associated with a thermal process of the water located at the tip of the needle electrode, and streamer coronas can be initiated in the air bubbles and propagated through the test gap with stepped leaders. The fastest streamer channel experiences the final jump across the test gap. The negative streamer channels not only have more branches but are also more widely spread out than the positive streamer channels. The propagation velocity of the positive streamer is much faster than that of the negative one and, in fact, both these velocities are independent of the water conductivity; in addition the time-lag to breakdown is insensitive to water conductivity. The higher the water conductivity the larger the pre-breakdown energy, therefore, the ionic currents do not contribute to the initiation and propagation of the underwater discharges in the test conditions considered.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.15 no.5
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• pp.383-387
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• 2002

N-channel metal-ferroelectric-insulator-semiconductor field-effect-transistors (MFISFET's) by using $SrBi_2Ta_2O_9$/Silicon Nitride/Si (100) structure were fabricated. The fabricated devices exhibit comfortable memory windows, fast switching speeds, good fatigue resistances, and long retention times that are suitable for advanced ferroelectric memory applications. The estimated switching time and polarization ($2P_r$) of the fabricated FET measured at applied electric field of 376 kV/cm were less than 50 ns and about 1.5 uC/$\textrm{cm}^2$, respectively. The magnitude of on/off ratio indicating the stored information performance was maintained more than 3 orders until 3 days at room temperature. The $I_DV_G$ characteristics before and after being subjected to $10^11$ cycles of fatigue at a frequency of 1 MHz remained almost the same except a little distortion in off state.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.20 no.6
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• pp.491-495
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• 2007

This paper has demonstrated the electrical properties of SiGe pMOSFETs fabricated on both bulk-Si and PD SOI substrates. Two principal merits, the mobility increase in strained-SiGe channel and the parasitic capacitance reduction of SOI isolation, resulted in improvements in device performance. It was observed that the SiGe PD SOI could alleviate the floating body effect, and consequently DIBL was as low as 10 mV/V. The cut-off frequency of device fabricated on PD SOI substrate was roughly doubled in comparison with SiGe bulk: from 6.7 GHz to 11.3 GHz. These experimental result suggests that the SiGe PD SOI pMOSFET is a promising option to drive CMOS to enhance performance with its increased operation frequency for high speed and low noise applications.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.24 no.9
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• pp.693-696
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• 2011

Recently, amorphous oxide semiconductors (AOSs) based thin-film transistors (TFTs) have received considerable attention for application in the next generation displays industry. The research trends of AOSs based TFTs investigation have focused on the high device performance. The electrical properties of the TFTs are influenced by trap density. In particular, the threshold voltage ($V_{th}$) and subthreshold swing (SS) essentially depend on the semiconductor/gate-insulator interface trap. In this article, we investigated the effects of Ar plasma-treated $SiO_2$ insulator on the interfacial property and the device performances of amorphous indium gallium zinc oxide (a-IGZO) TFTs. We report on the improvement in interfacial characteristics between a-IGZO channel layer and gate insulator depending on Ar power in plasma process, since the change of treatment power could result in different plasma damage on the interface.

• Journal of the Korea Institute of Military Science and Technology
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• v.11 no.4
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• pp.83-91
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• 2008

The development of the equal channel angular pressing(ECAP) process in metals has recently provided a feasible solution to produce ultra-fine or nano-grained bulk materials with tailored material properties. However, ECAP process is difficult to scale up commercially due to requirements of an excessive load. In this paper, a new Hybrid-ECAP process with torsional die is considered to obtain materials of ultra-fine grain structure under low forming load. An upper bound analysis and numerical simulation (DEFORM 3D, a commercial FEM code) are carried out on the torsional die. By the upper bound analysis, analytical expression for the compression force and rotation speed are obtained. By the FEM analysis, the distribution of strain, stress and deformation are obtained. These results show that the Hybrid-ECAP is a useful process because this process can obtain the homogeneous deformations with relatively low forming load. Additionally, due to decreased forming load, die life can be improve.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.11a
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• pp.171-172
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• 2007

We fabricated the metal-ferroelectric-insulator-semiconductor filed-effect transistors (MFIS-FETs) using the $(Bi,La)_4Ti_3O_{12}\;and\;LaZrO_x$ thin films. The $LaZrO_x$ thin film had a equivalent oxide thickness (EOT) value of 8.7 nm. From the capacitance-voltage (C-V) measurements for an Au/$(Bi,La)_4Ti_3O_{12}/LaZrO_x$/Si MFIS capacitor, a hysteric shift with a clockwise direction was observed and the memory window width was about 1.4 V for the bias voltage sweeping of ${\pm}9V$. From drain current-gate voltage $(I_D-V_G)$ characteristics of the fabricated Fe-FETs, the obtained threshold voltage shift (memory window) was about 1 V due to ferroelectric nature of BLT film. The drain current-drain voltage $(I_D-V_D)$ characteristics of the fabricated Fe-FETs showed typical n-channel FETs current-voltage characteristics.

• Korean Journal of Remote Sensing
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• v.32 no.1
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• pp.67-71
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• 2016

The surface reflectance is essential to retrieval various indicators related land properties such as vegetation index, albedo and etc. In this study, we estimated surface reflectance using Himawari-8 / Advanced Himawari Imager (AHI) channel data. In order to estimate surface reflectance from Top of Atmosphere (TOA) reflectance, the atmospheric correction is necessary because all of the TOA reflectance from optical sensor is affected by gas molecules and aerosol in the atmosphere. We used Second Simulation of a Satellite Signal in the Solar Spectrum Vector (6SV) Radiative Transfer Model (RTM) to correct atmospheric effect, and Look-Up Table (LUT) to shorten the calculation time. We verified through comparison Himawri-8 / AHI surface reflectance and Proba-V S1 products. As a result, bias and Root Mean Square Error (RMSE) are calculated about -0.02 and 0.05.

• Polymer(Korea)
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• v.28 no.3
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• pp.263-272
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• 2004

Using computer simulation, the processibility and properties of the inst겨ment panel of automobile produced by gas injection molding were predicted and evaluated. The P-V-T data of ABS, resin were used in the gas injection molding process in order to estimate the mold filling phenomena. The optimum process conditions were found by adjusting the process parameters including pressure, filling time, the positions of gas channel and runner. The process was simplified and the final instrument panel produced by the gas injection molding was found to have improved dimension stability compared to the one produced by conventional injection molding.

• Transactions of Materials Processing
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• v.14 no.6 s.78
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• pp.553-558
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• 2005

A study on the microstructure, the texture and the formability of the samples after ECAPed and subsequent heat-treated AA 1050 aluminum alloy sheet have been carried out. The specimens after the ECAP showed a very fine grain size, a decrease of <100> // ND, and an increase of <111> // ND textures. The $\{111\}<112>,\;\{123\}<634>,\;\{110\}<001>,\;\{112\}<111>,\;\{110\}<111>,\;and\;\{013\}<231>$ texture components were increased in the specimens after the ECAP and subsequent heat-treatment at $400^{\circ}C$ for 1 hour. One of the most important properties in sheet metals is formability. The r-value or plastic strain ratio has was as a parameter that expressed the formability of sheet metals. The change of the plastic strain ratios after the ECAP and subsequent heat-treatment conditions were investigated and it was found that they were two times higher than those of the initial Al sheets. This could be attributed to the formation above texture components through the ECAP and subsequent heat-treatment of AA 1050 Aluminum alloy sheet.