• The Journal of the Institute of Internet, Broadcasting and Communication
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• v.11 no.5
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• pp.41-46
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• 2011

Mobile Ad-Hoc networks (MANET) has been getting the spotlight in the area of the wireless networks because of its flexibility and salability, and developing of many applications with it. As a consequence, MANETs are required to process not only simple data traffics, but also multimedia traffics, which has some constraints on the performances. However, unlike wired-networks, the wireless networks have frequent route-disconnections due to some reasons such as channel errors and mobility. Such frequent link disconnections makes the delivery of multimedia traffics difficult. Even though there many researches on multimedia transmissions on various environments, the performances of multimedia transmissions over fading channel and mobility even using various routing protocols have not been evaluated. Therefore, this paper extensively simulates the MPEG-4 video transmission over fading channel environment with node's mobility. In addition, the performances with two routing protocols such as AODV and DSR are compared. Finally, the simulation results shows that DSR protocol has the better performances to deliver MPEG-4 traffic.

• Journal of the Institute of Electronics Engineers of Korea TC
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• v.48 no.11
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• pp.1-8
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• 2011

In this paper, we study receiver design issue to apply the OFDM based WLAN specification, such as 802.11p, to the communications in high speed mobile environment, e.g., for the ICT based railroad control on a train having its speed up to 300 km/hr. To successfully apply the existing WLAN specifications without modifying its transmission format, the performance at the receiver will solely depends on the channel estimation performance if we ignore the affect of frequency offset With a speed of multiple hundred km/hr, the channel estimation using only the preamble will not provide enough precision since the channel changes so fast. Therefore, in this paper, taking the high mobility into account, we focus on the design of decision directed channel estimation and equalization techniques and perform simulations to evaluate and compare their performances and to finally confirm the applicability of the existing WLAN specification to the systems with very high mobility.

• International journal of advanced smart convergence
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• v.9 no.3
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• pp.137-140
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• 2020

Orthogonal time frequency space (OTFS) modulation is considered as one of the solutions to cope with high mobility channel environments. It converts the time-varying channel to the near-constant channel response in the delay-Doppler domain. This modulation scheme also benefits from the diversity in two-dimensional modulation. According to recent researches, this method outperforms the conventional OFDM modulation, especially in high-speed channel conditions. In this paper, to investigate the performance of OTFS in a practical system, channel estimation in the delay-Doppler domain is compared with the conventional method in the time-frequency domain at different mobile speeds. Simulation results confirm that the delay-Doppler domain channel estimation brings a better performance compared to the conventional one under the same overhead rate.

• Journal of the Korean Institute of Telematics and Electronics D
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• v.35D no.12
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• pp.53-58
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• 1998

A buried channel poly-Si TFT (BCTFT) for application of high performance integrated circuits has been proposed and fabricated. BCTFT has unique features, such as the moderately-doped buried channel and counter-doped body region for conductivity modulation, and the fourth terminal entitled back bias for preventing kink effect. The n-type and p-type BCTFT exhibits superior performance to conventional poly-Si TFT in ON-current and field effect mobility due to moderate doping at the buried channel. The OFF-state leakage current is not increased because the carrier drift is suppressed by the p-n junction depletion between the moderately-doped buried channel and the counter-doped body region.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.11a
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• pp.5-5
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• 2009

Thin-film-transistors (TFTs) that can be prepared at low temperatures have attracted much attention because of the great potential for transparent and flexible electronics. One of the mainstreams in this field is the use of organic semiconductors such as pentacene. But device performance of the organic TFTs is still limited due to low field-effect mobility and rapid degradation after exposing to air. Alternative approach is the use of amorphous oxide semiconductors as a channel. Amorphous oxide semiconductors (AOSs) based TFTs showed the fast technological development, because AOS films can be fabricated at room temperature and exhibit the possibility in application like flexible display, electronic paper, and larges solar cells. Among the various AOSs, a-IGZO has lots of advantages because it has high channel mobility, uniform surface roughness and good transparency. [1] The high mobility is attributed to the overlap of spherical s-orbital of the heavy post-transition metal cations. This study demonstrated the effect of the variation in channel thickness from 30nm to 200nm on the TFT device performance. When the thickness was increased, turn-on voltage and subthreshold swing was decreased. The a-IGZO channels and source/drain metals were deposited with shadow mask. The a-IGZO channel layer was deposited on $SiO_2$/p-Si substrates by RF magnetron sputtering, where RF power is 150W. And working pressure is 3m Torr, at $O_2/Ar$ (2/28 sccm) atmosphere. The electrodes were formed with electron-beam evaporated Ti (30 nm) and Au (70 nm) bilayer. Finally, Al (150nm) as a gate metal was thermal-evaporated. TFT devices were heat-treated in a furnace at 250 $^{\circ}C$ and nitrogen atmosphere for 1hour. The electrical properties of the TFTs were measured using a probe-station. The TFT with channel thickness of 150nm exhibits a good subthreshold swing (SS) of 0.72 V/decade and on-off ratio of $1{\times}10^8$. The field effect mobility and threshold voltage were evaluated as 7.2 and 8 V, respectively.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.24 no.5
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• pp.359-363
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• 2011

To integrate the sensor driver and logic circuits, fabricating down scaled transistors has been main issue. At this research, short channel effects were analyzed after n channel polycrystalline silicon thin film transistor was fabricated at high temperature. As a result, on current, on/off current ratio and transconductance were increased but threshold voltage, electron mobility and s-slope were reduced with a decrease of channel length. When carriers that develop at grain boundary in activated polycrystalline silicon have no gate biased, on current was increased with punch through by drain current. Also, due to BJT effect (parallel bipolar effect) that developed under region of channel by increase of gate voltage on current was rapidly increased.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.04b
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• pp.63-64
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• 2009

The TFTs have been fabricated with 3 different geometry SID electrodes which have the same channel W/L ratio (W/L = 5) due to constant channel resistance, The 3 samples have different channel widths (350, 150, and $25\;{\mu}m$) and channel lengths (70, 30, and $5\;{\mu}m$) by fixed channel W/L ratio simultaneously on one chip for reliable comparisons. Resultant on-current and field effect mobility are proportional to the channel width, while the subthreshold swing is inversely proportional to the channel width mainly due to the change of contact resistance. These results show that the contact resistance strongly affects the device performances and should be considered in the applications.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.22 no.9
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• pp.747-750
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• 2009

The TFTs have been fabricated with 3 different geometry SID electrodes which have the same channel W/L ratio (W/L = 5) due to constant channel resistance, The 3 samples have different channel widths (350, 150, and 25 ${\mu}m$) and channel lengths (70, 30, and 5 ${\mu}m$) by fixed channel W/L ratio simultaneously on one chip for reliable comparisons. Resultant on-current and field effect mobility are proportional to the channel width, while the subthreshold swing is inversely proportional to the channel width mainly due to the change of contact resistance. These results show that the contact resistance strongly affects the device performances and should be considered in the applications.

• JSTS:Journal of Semiconductor Technology and Science
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• v.8 no.2
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• pp.111-114
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• 2008

We studied the influence of nanocrystalline silicon (nc-Si) thin film thickness on top gate nc-Si thin film transistor (TFT) fabricated at $180^{\circ}C$. The nc-Si thickness affects the characteristics of nc-Si TFT due to the nc-Si growth similar to a columnar. As the thickness of nc-Si increases from 40 nm to 200 nm, the grain size was increased from 20 nm to 40 nm. Having a large grain size, the thick nc-Si TFT surpasses the thin nc-Si TFT in terms of electrical characteristics such as field effect mobility. The channel resistance was decreased due to growth of the grain. We obtained the experimental results that the field effect mobility of the fabricated devices of which nc-Si thickness is 60, 90 and 130 nm are 26, 77 and $119\;cm^2/Vsec$, respectively. The leakage current, however, is increased from $7.2{\times}10^{-10}$ to $1.9{\times}10^{-8}\;A$ at $V_{GS}=-4.4\;V$ when the nc-Si thickness increases. It is originated from the decrease of the channel resistance.

• 한국정보디스플레이학회:학술대회논문집
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• 2004.08a
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• pp.401-404
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• 2004

Transfer characteristics of poly-Si TFTs within process window of laser energy are investigated. In terms of surface morphology and transfer characteristics, process window of laser crystallization is evaluated. While maximum mobility exists in lower edge of process window in n-channel TFTs, maximum mobility exists in higher edge of process window in p-channel TFTs.