• Journal of the Korean Institute of Telematics and Electronics A
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• v.33A no.7
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• pp.176-184
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• 1996

To overcome the drawbacks of conventional LDMOSFETs, we propose RESURF EDMOSFETs which can be adapted in varous circuit applications, be driven without charge pumping circuity and thowe threshold voltage can be adjusted. The devices have the diffused drift region formed by a high tmperature process before the gate oxidaton. After the polysilicon gate electrode formation, a fraction of the drift region around the gate edge is opened for supplemental self-aligned ion implantation to obtain self-aligned drift region. This leads to a shorter gate length and desirable drift region junction contour under the gate edge for minimum specific-on-resistance. In additon, a and maximize the breakdown voltage. Also, by biasing the metal field plate, we can reduce the specific-on-resistance further. The devices are optimized by using the TSUPREM-4 process simulator and the MEDICI device simulator. The optimized devices have the breakdwon voltage and the specific-on-resistance of 101.5V and 1.14m${\Omega}{\cdot}cm^{2}$, respectively for n-channel RESURF EDMOSFET, and 98V and 2.75m.ohm..cm$^{2}$ respectively for p-channel RESURF EDMOSFET. To check the validity of the simulations, we fabricated n-channel EDMOSFETs and confirmed the measured breakdown voltage of 97V and the specific-on-resistance of 1.28m${\Omega}{\cdot}cm^{2}$. These results are superior to those of any other reported power devices for smart power IC applications.

• Water for future
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• v.23 no.2
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• pp.251-263
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• 1990

For surcharge flow in a sewer, the slot technique simulates surcharge flow as open - channel flow using a hypothetical narrow open piezometric slot at the sewer crown. The flow in a sewer is described mathematically using the unsteady open - channel Saint-Venant equations. In this study, the computer simulation model(USS-slot) using slot techniques is develeped to simulate the inlet hydrographs to manholes and the flow under pressure as well as free - surface flow in tree - type sewer networks of circular conduits. The inlet hydrographs are simulated by using the rational method or the ILSD progrm. The Saint-Venant equations for unsteady open - channel flow in seweres are solved by using a four - point implicit difference scheme. The flow equations of the sewers and the junction flow equations are solved simulaneously using a sparse matrix solution technique.

• Journal of the Institute of Electronics and Information Engineers
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• v.49 no.9
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• pp.145-154
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• 2012

This paper proves that multi-port junction-based direct receivers (MPDRs) can regenerate I- and Q-channel signals accurately by using conventional I/Q mismatch compensation. This proof enables MPDRs to be integrated into existing RFIC based systems without additional digital signal processing. This paper analyzes the relationship between accuracy of I/Q regeneration parameters and degree of I/Q mismatch, and shows that the estimation results and the simulation results are almost the same.

• JSTS:Journal of Semiconductor Technology and Science
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• v.14 no.2
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• pp.153-162
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• 2014

We show that carbon nanotube sensors with gold particles on the single-walled carbon nanotube (SWNT) network operate as Schottky barrier transistors, in which transistor action occurs primarily by varying the resistance of Au-SWNT junction rather than the channel conductance modulation. Transistor characteristics are calculated for the statistically simplified geometries, and the sensing mechanisms are analyzed by comparing the simulation results of the MOSFET model and Schottky junction model with the experimental data. We demonstrated that the semiconductor MOSFET effect cannot explain the experimental phenomena such as the very low limit of detection (LOD) and the logarithmic dependence of sensitivity to the DNA concentration. By building an asymmetric concentric-electrode model which consists of serially-connected segments of CNTFETs and Schottky diodes, we found that for a proper explanation of the experimental data, the work function shifts should be ~ 0.1 eV for 100 pM DNA concentration and ~ 0.4 eV for $100{\mu}M$.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.11a
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• pp.22-23
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• 2008

The conventional IGBT has two problems to make the device taking high performance. The one is high on state voltage drop associated with JFET region, the other is low breakdown voltage associated with concentrating the electric field on the junction of between p base and n drift. This paper is about the structure to effectively improve both the lower on state voltage drop and the higher breakdown voltage than the conventional IGBT. For the fabrication of the circular trench IGBT with the circular trench layer, it is necessary to perform the only one wet oxidation step for the circular trench layer. Analysis on both the on state voltage drop and the Breakdown voltage show the improved values compared to the conventional IGBT structure. Because the circular trench layer disperses electric field from p base and n drift junction to circular trench, the breakdown voltage increase. The on state voltage drop decrease due to reduction of JFET region and direction change of current path which pass through reversed layer channel.

• Asian Pacific Journal of Cancer Prevention
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• v.17 no.9
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• pp.4363-4365
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• 2016

Background: The complex anatomy of the pancreaticobiliary duct was crucial in management of pancreatic and biliary tract disease. Materials and Methods: Fresh specimens of pancreas, common bile duct (CBD), and duodenum were obtained en bloc from autopsies of 160 patients. Results: Ninety-three male and 67 female patients were included. The length of the pancreas ranged from 9.8-20 cm (mean, 16.20 +/- 1.70 cm). The intrapancreatic portion of the CBD showed patterns of three types: most common (85.30%) was type A, in which the anterior surface of the common bile duct was totally covered, while its posterior surface was partially covered, by the pancreatic parenchyma. On dissection of the accessory duct of Santorini, the accessory duct was traceable to the duodenal wall in 67.6%. The anatomy of the Wirsung-choledochus confluence was grouped into five different types. The common channel was found in 75.60% and its length varied from just a common junction (so-called "V-type" anatomy) to 15 mm (Y-type-b). Separate papillae (so-called "II-type") were found in 15.3% of specimens. Conclusions: Several important points regarding the anatomy of the pancreaticobiliary junction and pancreatic ductal system were illustrated in this study.

• Journal of Gastric Cancer
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• v.10 no.4
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• pp.188-195
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• 2010

Purpose: This study was done to evaluate the usefulness of preoperative computed tomography (CT) and intraoperative laparoscopic ultrasound to facilitate treatment of gastric submucosal tumors. Materials and Methods: The feasibility of laparoscopic wedge resection as determined by CT findings of tumor size, location, and growth pattern was correlated with surgical findings in 89 consecutive operations. The role of laparoscopic ultrasound for tumor localization was analyzed. Results: Twenty-three patients were considered unsuitable for laparoscopic wedge resection because of large tumor size (N=13) or involvement of the gastroesophageal junction (N=9) or pyloric channel (N=1). Laparoscopic wedge resection was not attempted in 11 of these patients because of large tumor size. Laparoscopic wedge resection was successfully performed in 65 of 66 (98.5%) patients considered suitable for this procedure. Incorrect interpretation of preoperative CT resulted in a change of surgery type in seven patients (7.9%): incorrect CT diagnosis on gastroesophageal junction involvement (N=6) and on growth pattern (N=1). In 18 patients without an exophytic growth pattern, laparoscopic ultrasound was necessary and successfully localized all lesions. Conclusions: Preoperative CT and laparoscopic ultrasound are useful for surgical planning and tumor localization in laparoscopic wedge resection.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.21 no.11
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• pp.981-986
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• 2008

The conventional IGBT has two problems to make the device taking high performance. The one is high on state voltage drop associated with JFET region, the other is low breakdown voltage associated with concentrating the electric field on the junction of between p base and n drift. This paper is about the structure to effectively improve both the lower on state voltage drop and the higher breakdown voltage than the conventional IGBT. For the fabrication of the circular trench IGBT with the circular trench layer, it is necessary to perform the only one wet oxidation step for the circular trench layer. Analysis on both the on state voltage drop and the breakdown voltage show the improved values compared to the conventional IGBT structure. Because the circular trench layer disperses electric field from the junction of between p base and n drift to circular trench, the breakdown voltage increase. The on state voltage drop decrease due to reduction of JFET region and direction changed of current path which pass through reversed layer channel. The electrical characteristics were studied by MEDICI simulation results.

• Transactions of the Korean Society of Mechanical Engineers B
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• v.34 no.7
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• pp.671-677
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• 2010

In the present study, we designed a microfluidic platform for generating monodisperse droplets with diameters ranging from hundreds of nanometers to several micrometers. To generate fine droplets, T-junction and flow-focusing geometry are integrated into the microfluidic channel. Relatively large aqueous droplets are generated at the upstream T-junction and transported to the flow-focusing geometry, where each droplet is broken into smaller droplets of the desired size by the action of pressure and viscous stress. In this configuration, the flow rate of the inner fluid can be made very low, and the ratio of the inner- and outer-fluid flow rates in the flow-focusing region can be made very high. It has been shown that the present microfluidic device can generate droplets with diameters of approximately $1\;{\mu}m$ (standard deviation: <3%).

• Journal of the Korean Vacuum Society
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• v.22 no.4
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• pp.211-217
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• 2013

Two types of organic thin film solar cell devices with bulk hetero-junction (BHJ) structure were fabricated on plastic substrates using conjugated polymers of $PCDTBT:PC_{71}BM$ and $PTB7:PC_{71}BM$ blended as active channel layer. Time-variant characteristics of the organic thin film solar cell devices were investigated: short circuit current density ($J_{SC}$); open circuit voltage ($V_{OC}$); ; fill factor (FF); power conversion efficiency (PCE, ŋ). All the performance parameters were degraded by progress of the measurement time, while $V_{OC}$ showed the most drastic decrease with time. Possible factors to cause the time-variant alteration of performance parameters were discussed to be clarified.