• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2005.07a
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• pp.504-505
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• 2005

In this report, we demonstrate a high performance polymer thin-film transistor fabricated on a paper substrate. As a water barrier layer, parylene was coated on the paper substrate by using vacuum deposition process. Using poly (3-hexylthiophene) as an active layer, a polymer thin-film transistor with field-effect of up to 0.086 $cm^2/V{\cdot}s$ and on/off ratio of $10^4$ was achieved. The fabrication of polymer thin-film transistor built on a cheap paper substrate is expected to open a channel for future applications in flexible and disposable electronics with extremely low-cost.

• Bulletin of the Korean Chemical Society
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• v.12 no.6
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• pp.658-661
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• 1991

The gas-phase nucleophilic substitution reaction of pentafluoroanisole with $OH^-$ and ${NH_2}^-$ nucleophiles have been studied theoretically using the AM1 method. Three reaction channels, $S_N2$, IPSO and $S_NAr$ (scheme 1), are all very exothermic so that all are accessible despite the varying central energy barriers which are much lower than the reactants level. In the IPSO and $S_NAr$ channels, the reactants form directly a stable ,${\sigma}$-anion complex which proceeds to form a proton transfer complex via a transition barrier corresponding to a loose ${\pi}$-type complex with the F-(or ${OCH_3}^-$) leaving group. Due to a greater number of probable reaction sites available for $S_NAr$ compared to the other two processes, the $S_NAr$ channel is favored as experimentally observed.

• The Korean Journal of Physiology and Pharmacology
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• v.21 no.3
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• pp.309-316
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• 2017

Transient receptor potential vanilloid 3 (TRPV3) is a non-selective cation channel with modest permeability to calcium ions. It is involved in intracellular calcium signaling and is therefore important in processes such as thermal sensation, skin barrier formation, and wound healing. TRPV3 was initially proposed as a warm temperature sensor. It is activated by synthetic small-molecule chemicals and plant-derived natural compounds such as camphor and eugenol. Schisandra chinensis (Turcz.) Baill (SC) has diverse pharmacological properties including antiallergic, anti-inflammatory, and wound healing activities. It is extensively used as an oriental herbal medicine for the treatment of various diseases. In this study, we investigated whether SC fruit extracts and seed oil, as well as four compounds isolated from the fruit can activate the TRPV3 channel. By performing whole-cell patch clamp recording in HEK293T cells overexpressing TRPV3, we found that the methanolic extract of SC fruit has an agonistic effect on the TRPV3 channel. Furthermore, electrophysiological analysis revealed that ${\gamma}$-schisandrin, one of the isolated compounds, activated TRPV3 at a concentration of $30{\mu}M$. In addition, ${\gamma}$-schisandrin (${\sim}100{\mu}M$) increased cytoplasmic $Ca^{2+}$ concentrations by approximately 20% in response to TRPV3 activation. This is the first report to indicate that SC extract and ${\gamma}$-schisandrin can modulate the TRPV3 channel. This report also suggests a mechanism by which ${\gamma}$-schisandrin acts as a therapeutic agent against TRPV3-related diseases.

• JSTS:Journal of Semiconductor Technology and Science
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• v.17 no.3
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• pp.354-362
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• 2017

We investigated the improvement in electrical characteristics of large AlGaN/GaN on Si Schottky barrier diode (SBD) induced by structural change to achieve a better trade-off between the forward and reverse performance to obtain high power conversion efficiency in PFC converter. Using an optimized dry etch condition for a large device, we fabricated three-types of SBD with 63 mm channel width: conventional, recessed, recessed dual-anode-metal SBD. The recessed dual-anode-metal SBD exhibited a very low turn-on voltage of 0.34 V, a high forward current of 1.63 A at 1.5 V, a leakage current of $114{\mu}A$ at -15 V, a breakdown voltage of 794 V.

• Proceedings of the Materials Research Society of Korea Conference
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• 2011.10a
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• pp.21.2-21.2
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• 2011

$Fe_3O_4$ having half metallic property is one of the efficient spin filtering materials which are widely used in spintronic research field and ZnO is wide band gap semiconductor which can be used by tunnel barrier or semiconductor channel in spin MOSFET. We investigated the magnetic and the electric properties of $Fe_3O_4$/ZnO multilayer fabricated on c-$Al_2O_3$ substrate by pulsed laser deposition (PLD). For multilayer films, PLD was performed at variable temperatures such as $200{\sim}750^{\circ}C$ and at target distance from 40 to 80 mm, KrF eximer laser of 1.5 $J/cm^2$ and a reputation rate of 2Hz. $Fe_3O_4$/ZnO multilayers were deposited at $4{\times}10^{-6}$ Torr. After fabricating $Fe_3O_4$/ZnO multilayers, $Fe_3O_4$/ZnO multilayers were treated by RTA(Rapid Thermal Annealing) at various temperature to change magnetic phase. The magnetism of the multilayer is changed by thickness of the ZnO tunnel barrier. Magnetic phase of FexOy showed a very small magnetism due to $Fe_2O_3$ ${\alpha}$-phase, but large magnetism from $Fe_3O_4$ or $Fe_2O_3$ ${\gamma}$-phase was observed. In the present study, effect of the ZnO thickness on the MR (magnetoresistance) ratio was investigated in detail.

• Geomechanics and Engineering
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• v.27 no.6
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• pp.583-594
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• 2021

The gas permeability behavior of unsaturated bentonite-based materials is of major importance for ensuring effective sealing of high-level radwaste repositories. This study investigated this by taking a sample of Granular Bentonite Material (GBM) at the end of the Engineered Barrier Emplacement (EB) experiment in the Opalinus Clay, placing it under different humidity conditions until it achieved equilibration, and testing the change in the gas permeability under loading and unloading. Environmental humidity is shown to have a significant effect on the water content, saturation, porosity and dry density of GBM and to affect its gas permeability. Higher sensitivity to confining pressure is exhibited by samples equilibrated at higher relative humidity (RH). It should be noted that for the sample at RH=98%, when the confining pressure is raised from 1 MPa to 6 MPa, gas permeability can be reduced from 10^-16 m² to 10^-19 m², which is close to the requirements of gas tightness. Due to higher water content and easier compressibility, samples equilibrated under higher RH show greater irreversibility during the loading and unloading process. The effective gas permeability of highly saturated samples can be increased by 2-3 orders of magnitude after 105℃ drying. In addition, cracks possibly occurred during the dehydration and drying process will become the main channel for gas migration, which will greatly affect the sealing performance of GBM.

• The Korean Journal of Quaternary Research
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• v.13 no.1
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• pp.67-78
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• 1999

In present, the terminal area of the Nagdong River Delta consists of micro-depositional landforms with sand barrier islands, sand bars and tidal flats which are arranged parallel to the present shoreline, and have rapidly shifted toward sea during last 100 years due to human activities such as construction of estuary dam, industrial complex and residential area. To clarify the landform changes of the area, the author traced the morphologic change pattern based on interpretation of air-photos, topographic maps and old Korean traditional map, and the results are as follows ; Based on the Daedongyeojido, one of the old Korean map, published in 1861, the area including upper part of the delta was underlying by sea level except two larger sand barriers, which means the Nagdong River Delta was not completely formed as the present outline of morphology by 1860s. According to the topographic map(1 :50,000) of 1916, the delta resembled to the present morphology pattern was exposed in 1916, and at this time the area was mainly composed of one sand barrier island, four sand bars and tidal flats, which had slowly elongated southwards before construction of the Nagdong River Estuary Dam in 1987. But after 1987, the area has been rapidly and drastically shifted southwards in arrange with one chain of sand barrier islands (Elsugdo -Myeonghodo-Sinhodo ) and four chains of sand bars (first chain ; Jinwoodo -Daemadeung-Maenggeummeorideung, second chain : Jangjado-Baeghabdeung, third chain ; Saedeung-Namusitdeung, fourth : Doyodeung-Dadaedeung) parallel to shoreline. This rapid landform change of the area is now occurring, and is seemed to ascribed firstly, to the construction of the Nagdong River Estuary Dam on Elsugdo in 1987, the Sinho Industrial Complex on Sinhodo and Myeongji Residential Area on Myeonghodo in 1992, secondly, to artificial alteration of drainage channel and consequential breakdown of former energy system between riverflow and tidal-and wave-energy. From these facts, it is inferred that the landform change pattern of the area will continue until a new equilibrium between the factor available to this energy system is accomplished.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.45 no.5
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• pp.19-25
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• 2008

In this study, we fabricated Organic Thin Film Transistors(OTFTs) with $C_{60}$ hole injection layer between organic semiconductor(pentacene) and metal electrode, and we compared the electrical characteristics of OTFTs with/without $C_{60}$. When the $C_{60}$ hole injection layer was introduced, the mobility and the threshold voltage were improved from 0.298 $cm^2/V{\cdot}s$ and -13.3V to 0.452 $cm^2/V{\cdot}s$ and -10.8V, and the contact resistance was also reduced. When the $C_{60}$ is inserted, the hole injection was enhanced because the $C_{60}$ prevent the unwanted chemical reaction between pentacene and Au. Furthermore, we fabricated the OTFTs using Al as their electrodes. When the OTFTs were made by only aluminum electrode, the channel were not mostly made because of the high hole injection barrier between pentacene and aluminum, but when the $C_{60}$ layer with an optimal thickness was applied between aluminum and pentacene, the device performances were obviously enhanced because of the vacuum energy level shift of Al and the consequent decrease of the hole injection barrier which was induced by the interface dipole formation between $C_{60}$ and Al. The mobility and $I_{ON}/I_{OFF}$ current ratio of OTFT with $C_{60}/Al$ electrode were 0.165 $cm^2/V{\cdot}s$ and $1.4{\times}10^4$ which were comparable with the normal Au electrode OTFT.

• Clean Technology
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• v.28 no.4
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• pp.323-330
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• 2022

Microfluidic paper-based analytical devices (μPADs) have recently been in the spotlight for their applicability in point-of-care diagnostics and environmental material detection. This study presents a double-sided printing method for fabricating 3D-μPADs, providing simple and cost effective metal ion detection. The design of the 3D-μPAD was made into an acryl stamp by laser cutting and then coating it with a thin layer of PDMS using the spin-coating method. This fabricated stamp was used to form the 3D structure of the hydrophobic barrier through a double-sided contact printing method. The fabrication of the 3D hydrophobic barrier within a single sheet was optimized by controlling the spin-coating rate, reagent ratio and contacting time. The optimal conditions were found by analyzing the area change of the PDMS hydrophobic barrier and hydrophilic channel using ink with chromatography paper. Using the fabricated 3D-μPAD under optimized conditions, Ni²⁺, Cu²⁺, Hg²⁺, and pH were detected at different concentrations and displayed with color intensity in grayscale for quantitative analysis using ImageJ. This study demonstrated that a 3D-μPAD biosensor can be applied to detect metal ions without special analysis equipment. This 3D-μPAD provides a highly portable and rapid on-site monitoring platform for detecting multiple heavy metal ions with extremely high repeatability, which is useful for resource-limited areas and developing countries.

• JSTS:Journal of Semiconductor Technology and Science
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• v.16 no.2
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• pp.172-178
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• 2016

In this paper, we propose a sub-10 nm Ge/GaAs heterojunction-based tunneling field-effect transistor (TFET) with vertical band-to-band tunneling (BBT) operation for ultra-low-power (LP) applications. We design a stack structure that is based on the Ge/GaAs heterojunction to realize the vertical BBT operation. The use of vertical BBT operations in devices results in excellent subthreshold characteristics with a reduction in the drain-induced barrier thinning (DIBT) phenomenon. The proposed device with a channel length ($L_{ch}$) of 5 nm exhibits outstanding LP performance with a subthreshold swing (S) of 29.1 mV/dec and an off-state current ($I_{off}$) of $1.12{\times}10^{-11}A/{\mu}m$. In addition, the use of the highk spacer dielectric $HfO_2$ improves the on-state current ($I_{on}$) with an intrinsic delay time (${\tau}$) because of a higher fringing field. We demonstrate a sub-10 nm LP switching device that realizes a good S and lower $I_{off}$ at a lower supply voltage ($V_{DD}$) of 0.2 V.