• Transactions of the Korean Society of Mechanical Engineers A
• /
• v.29 no.6 s.237
• /
• pp.904-912
• /
• 2005

The flow in a microchannel is usually characterized as a low Reynolds number (Re) so that good mixing is quite difficult to be achieved. In this regard, we developed a novel chaotic micromixer, named Barrier Embedded Kenics Micromixer (BEKM). In the BEKM, the higher level of chaotic mixing can be achieved by combining two general chaotic mixing mechanisms: (i) splitting/reorientation by helical elements inside the microchannel and (ii) stretching/folding via periodically located barriers on the channel wall. The fully three-dimensional geometry of BEKM was realized by a micro-stereolithography technology, in this study, along with a Kenics micromixer and a circular T-pipe. Mixing performances of three micromixers were experimentally characterized in terms of an average mixing color intensity of phenolphthalein. Experimental results show that BEKM has better mixing performance than other two micromixers. Chaotic mixing mechanism, proposed in this study, could be integrated as a mixing component with Micro-Total-Analysis-System, Lab-on-a-chip and so on.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2011.02a
• /
• pp.263-263
• /
• 2011

본 연구에서는 DBD (Dielectric Barrier Discharge)방식의 상압 플라즈마를 이용하여 FPD (flat panel display) 공정에 사용되는 a-Si, Si3N4의 식각 공정 특성을 평가하였다. 사용된 DBD 반응기는 기존의 blank planar plate 형태의 Power가 인가되는 anode 부분과 Dielectric Barrier 사이 공간을 액상의 도전체로 채워 넣은 형태의 전극이 사용 하였으며, 인가 Power는 40kHz AC 최대인가 전압 15 kVp를 사용 하였다. 방전 가스는 N2, 반응가스로는 CDA (Clean Dry Air)와 NF3, 액상의 Etchant를 사용 하였으며 모든 공정은 In-line type으로 시편을 처리 하였다. NF3의 경우 30 mm/sec 이송속도 1회 처리 기준 a-Si 1300${\AA}$, Si3N4 1900${\AA}$의 식각 두께를 보였으며 a-Si : Si3N4 선택비는 N2, CDA의 조절을 통하여 최대 1:2에서 4:1 정도까지 변화가 가능하였다. 균일도는 G2 (370 mm${\times}$470 mm)의 경우 5.8 %의 균일도를 보이고 있다. 이외에도 NF3 공정의 경우 실제 TFT-LCD 공정 중 n+ channel (n+ a-Si:H)식각 공정에 적용하여 5.5 inch LCD panel feasibility를 확인 할 수 있었다. 액상 Etchant (HF수용액, NH4HF2)는 버블러를 사용하여 기화 시켜 플라즈마 소스를 통해 1차적으로 활성화 시키고 기존 DBD 반응기에 공급해 주는 형태로 평가를 진행하였다. 식각 특성은 30mm/sec 이송속도에서 a-Si $25{\AA}$ 정도로 가스 형태의 Etchant에 비해 매우 낮은 수준이나 Etching rate 향상을 위한 factor 파악 및 개선을 위한 연구를 진행 하였다.

• JSTS:Journal of Semiconductor Technology and Science
• /
• v.4 no.2
• /
• pp.94-99
• /
• 2004

silicided 50-nm-gate-length n-type Schottky barrier metal-oxide-semiconductor field-effect-transistors (SB-MOSFETs) with 5 nm gate oxide thickness are manufactured. The saturation current is $120{\mu}A/{\mu}m$ and on/off-current ratio is higher than $10^5$ with low leakage current less than $10{\mu}A/{\mu}m$. Novel phenomena of this device are discussed. The increase of tunneling current with the increase of drain voltage is explained using drain induced Schottky barrier thickness thinning effect. The abnormal increase of drain current with the decrease of gate voltage is explained by hole carrier injection from drain into channel. The mechanism of threshold voltage increase in SB-MOSFETs is discussed. Based on the extracted model parameters, the performance of 10-nm-gate-length SB-MOSFETs is predicted. The results show that the subthreshold swing value can be lower than 60 mV/decade.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2007.11a
• /
• pp.75-76
• /
• 2007

Poly-Si Schottky barrier Thin Film Transistor (SB-TFT) is manufactured with erbium silicided source/drain. High quality poly-Si film was obtained by crystallizing the amorphous Si film with Excimer laser annealing (ELA) method. The fabricated poly-Si SB-TFT devices showed low leakage current and large on/off current ratio. Moreover, the electrical characteristics were considerably improved by 3% $H_2/N_2$ gas annealing, which is attributed to the reduction of trap states at the grain boundaries and interface trap states at gate oxide/poly-si channel.

• Journal of Environmental Science International
• /
• v.30 no.7
• /
• pp.507-517
• /
• 2021

In this study, the bathymetric data acquired from 2018 to 2020 and the precipitation and suspended sediment data were analyzed for changes in bathymetry owing to the discharge from the Nakdong River barrier and environmental factors, especially the torrential rain in 2020. Sediment erosion and deposition processes are repeated because of complex environmental factors such as discharge from the Nakdong River barrier and the influence of waves generated from the external sea. In the first half of the year after the dry season, bathymetric data showed relative erosion trends, whereas in the second half after the flood season, deposition trends were identified owing to the increase in sediment transport. However, the data from the second half of 2020 showed a large amount of erosion, resulting in tendencies different to those of erosion in the first half and deposition in the second half of the year. This result is judged to be influenced by the weather in the summer of 2020. The torrential rain in the summer of 2020 resulted in a higher force of erosion than that of deposition. In summary, the tendency for erosion is more significant than that of sedimentation, especially in the main channel area of the Nakdong River.

• Korean Chemical Engineering Research
• /
• v.59 no.1
• /
• pp.100-105
• /
• 2021

This paper proposes the polydimethylsiloxane (PDMS) blade coating method for fabrication of paper-based analytical device (PAD) that is able to monitor the disease diagnosis and progress without special analytical equipment. The mold that has PAD design is easily modified by using laser cutting technique. And the fabricated mold is used for hydrophobic barrier formation by blade coating. We have optimized the stable formation of PDMS hydrophobic barrier as blade coating condition, which is established by analyzing the structure of the PDMS hydrophobic barrier and change of hydrophilic channel size as thickness of the ink and contact time with the chromatography paper. Based on optimal condition, we demonstrate that PAD as biosensor can apply to detect protein, glucose, and metal ion without special analysis equipment.

• Bulletin of the Korean Chemical Society
• /
• v.27 no.7
• /
• pp.1009-1014
• /
• 2006

Density functional theory calculations are applied to investigate the intramolecular proton transfer in the tautomers of thymine radical cation and its hydrated complexes with one water molecule. The optimized structures and energies for 6 tautomers and 6 transition states of thymine radical cation are calculated at the B3LYP/6-311++G(d,p) level. It is predicted that the order of relative stability for the keto and enol tautomers of thymine radical cation is the same with that of the neutral thymine tautomers, though the enol tautomers are more stabilized with respect to the di-keto form in the radical cation than in the neutral state. A new channel of proton transfer from >C5-$CH_{3}$ of thymine is found to open and have the lowest energy barrier of other proton transfer processes in thymine radical cation. The roles of hydration are also investigated with thymine-water 1 : 1 complex ions. The presence of water significantly lowers the barrier of the proton transfer, which clearly shows the assisting role of hydration even with one water molecule

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2004.11a
• /
• pp.648-652
• /
• 2004

A comparative investigation of an experimental and a simulation of chemical kinetics for NOx removal from dielectric barrier discharges is presented. Several types of dielectric barrier discharges were implemented depending upon the configuration of electrodes. The simulation was based on an approximate mathematical model for plasma cleaning of waste gas. The influence of non uniform distributions of species due to the production of primary active particles in the streamer channel was taken into account. A comparison of observed experimental to the calculated removal efficiency of NOx showed acceptable agreement.

• Transactions on Electrical and Electronic Materials
• /
• v.5 no.5
• /
• pp.173-179
• /
• 2004

The influence of heavily Si impurity doping in the GaN barrier of InGaN/GaN multi-quantum well structures of blue light emitting diodes were investigated by growing samples in metal-organic chemical vapor deposition. The delta-doped sample was compared to the sample with the undoped barrier. The delta-doped sample shows the tunneling behavior and forms the energy level of 0.32 eV for tunneling and the photoemission of the 450-nm band. The photo-luminescence shows the blue-shifted broad band of the radiative transition due to the inclusion of Si delta-doped layer indicating that the delta doping effect acts to form the higher energy level than that of quantum well. The dislocation may provide the carrier tunneling channel and plays as a source of acceptor. During the tunneling of hot carrier, there was no light emission.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
• /
• 2015.10a
• /
• pp.863-865
• /
• 2015

본 연구에서는 비대칭 이중게이트 MOSFET의 채널 내 도핑농도분포에 대한 드레인유도장벽감소(Drain Induced Barrier Lowering; DIBL)에 대하여 분석하고자한다. DIBL은 드레인 전압에 의하여 소스 측 전위장벽이 낮아지는 효과로서 중요한 단채널 효과이다. 이를 분석하기 위하여 포아송방정식을 이용하여 해석학적 전위분포를 구하였으며 전위분포에 영향을 미치는 채널도핑농도의 분포함수변화에 대하여 DIBL을 관찰하였다. 채널길이, 채널두께, 상하단 게이트 산화막 두께, 하단 게이트 전압 등을 파라미터로 하여 DIBL을 관찰하였다. 결과적으로 DIBL은 채널도핑농도분포함수의 변수인 이온주입범위 및 분포편차에 변화를 나타냈다. 특히 두 변수에 대한 DIBL의 변화는 최대채널도핑농도가 $10^{18}/cm^3$ 정도로 고도핑 되었을 경우 더욱 현저히 나타나고 있었다. 채널길이가 감소할수록 그리고 채널두께가 증가할수록 DIBL은 증가하였으며 하단 게이트 전압과 상하단 게이트 산화막 두께가 증가할수록 DIBL은 증가하였다.