• 한국광학회:학술대회논문집
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• 한국광학회 2006년도 하계학술발표회 논문집
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• pp.499-500
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• 2006

• Journal of the Korean Physical Society
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• 제73권11호
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• pp.1684-1690
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• 2018

The layered semiconductors $Bi_2O_2Q$ (Q = S, Se) consists of $Bi_2O_2$ layers sandwiched by Q square nets. On the basis of density functional theory calculations, we examined the thermoelectric properties of $Bi_2O_2S$, $Bi_2O_2Se$ as well as hypothetical structure of $Bi_2O_2$($S_{0.5}Se_{0.5}$) consisting of mixed chalcogen nets. The thermoelectric power factor of $Bi_2O_2S_{0.5}Se_{0.5}$ is much greater than those of $Bi_2O_2S$ and $Bi_2O_2Se$, suggesting that introducing mixed chalcogen net in $Bi_2O_2Q$ is a possible way of enhancing the thermoelectric property of $Bi_2O_2Q$.

• 대한화학회지
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• 제50권4호
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• pp.315-320
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• 2006

도핑된 망간 산화물을 저온 산화환원반응을 통하여 합성하였다. 분말X선 회절분석 결과는 황이 도핑된 화합물이 층상 birnessite 구조로, 그리고 셀레늄 도핑 시료는 터널 -MnO2 구조로 결정화 되어 있음을 나타낸다. 이와 대조적으로 텔루륨이 도핑된 시료는 비정질상으로 잘 발달된 회절 피크를 보이지 않는다. EDS분석으로부터 칼코겐 원소가 망간 산화물 격자 내에 망간원소에 대해 4-7%의 농도로 도핑되었음을 확인하였다. 이들 물질을 이루는 구성원소의 화학결합상태를 X선 흡수 분광분석법 (XAS)을 이용하여 조사하였다. Mn K-흡수단 XAS 결과로부터 +3/+4가 혼합 원자가 상태를 가지는 망간 이온이 산소 팔면체 자리에 안정화 되어 있다는 사실을 확인하였다. Se K-와Te L1-흡수단 XAS 분석 결과는 중성인 Se과 Te 원소가 산화제인 KMnO4와의 반응을 통해 +6가 양이온으로 산화되었음을 보여준다. 결정구조와 망간의 산화상태를 감안하면 이들이 리튬 이차전지용 전극물질로서 응용 가능할 것으로 기대된다.

• Bulletin of the Korean Chemical Society
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• 제25권4호
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• pp.485-490
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• 2004

Silver-needle shaped crystals of $KLa_2Sb_3S_9$ from $K_2S_x$ flux and $KSm_2Sb_3Se_8$ from NaCl/KCl flux reactions were obtained and their crystal structures were determined by the single crystal X-ray diffraction method. $KLa_2Sb_3S_9$ crystallizes in the orthorhombic noncentrosymmetric space group $P2_12_12_1$ (No.19) with a unit cell of a = 4.220(3) ${\AA}$, b = 24.145(2) ${\AA}$, c = 14.757(5) ${\AA}$ and Z = 4. $KSm_2Sb_3Se_8$ crystallizes in the orthorhombic space group Pnma (No.62) with a unit cell of a = 16.719(3) ${\AA}$, b = 4.1236(8) ${\AA}$, c = 22.151(4) ${\AA}$ and Z = 4. Both structures have three-dimensional tunnel frameworks filled with $K^+$ ions. $KSm_2Sb_3Se_8$ is an ordered version of $ALn_{1{\pm}X}B_i{4{\pm}X}S_8$, and it is made up of NaCl-type and $Gd_2S_3$-type fragments. $KLa_2Sb_3S_9$ also contains building fragments similar to those of $KSm_2Sb_3Se_8$, however, there are chalcogen-chalcogen bonds in the $Gd_2S_3$-type fragment. The formula of $KLa_2Sb_3S_9$ can be described as $(K^+ )(La^{3+})_2(Sb^{3+})^3(S^{2-})_7(S_2^{2-})$.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2014년도 제46회 동계 정기학술대회 초록집
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• pp.368.1-368.1
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• 2014

We proposed amorphous GeSe-based ReRAM device of metal-insulator-metal (M-I-M) structure. The operation characteristics of memory device occured unipolar switching characteristics. By introducing the concepts of valance-alternation-pairs (VAPs) and chalcogen vacancies, the unipolar resistive switching operation had been explained. In addition, the current transport behavior were analyzed with space charge effect of VAPs, Schottky emission in metal/GeSe interface and P-F emission by GeSe bulk trap in mind. The GeSe ReRAM device of M-I-M structure indicated the stable memory switching characteristics. Furthermore, excellent stability, endurance and retention characteristics were also verified.

• 대한화학회지
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• 제49권6호
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• pp.603-608
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• 2005

• 반도체디스플레이기술학회지
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• 제18권4호
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• pp.35-39
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• 2019

Effect of Ge₂Sb₂Te₅ (GST) chalcogen composition on plasma induced damage was investigated by using Ar ions and F radicals. Experiments were carried out with three different modes; the physical etching, the chemical etching, and the ion-enhanced chemical etching mode. For the physical etching by Ar ions, the sputtering yield was obtained according to ion bombarding energy and there was no change in GST composition ratio. In the plasma mode, the lowest etch rate was measured at the same applied power and there was also no plasma induced damage. In the ion-enhanced chemical etching conditions irradiated with high energy ions and F halogen radicals, the GST composition ratio was changed according to the density of F radicals, resulting in higher roughness of the etched surface. The change of GST composition ratio in halogen plasma is caused by the volatility difference of GST-halogen compounds with high energy ions over than the activation energy of surface reactions.

• 한국재료학회:학술대회논문집
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• 한국재료학회 2011년도 추계학술발표대회
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• pp.3.1-3.1
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• 2011

Nanoengineered materials with advanced architectures are critical building blocks to modulate conventional material properties or amplify interface behavior for enhanced device performance. While several techniques exist for creating one dimensional heterostructures, electrospinning has emerged as a versatile, scalable, and cost-effective method to synthesize ultra-long nanofibers with controlled diameter (a few nanometres to several micrometres) and composition. In addition, different morphologies (e.g., nano-webs, beaded or smooth cylindrical fibers, and nanoribbons) and structures (e.g., core-.shell, hollow, branched, helical and porous structures) can be readily obtained by controlling different processing parameters. Although various nanofibers including polymers, carbon, ceramics and metals have been synthesized using direct electrospinning or through post-spinning processes, limited works were reported on the compound semiconducting nanofibers because of incompatibility of precursors. In this work, we combined electrospinning and galvanic displacement reaction to demonstrate cost-effective high throughput fabrication of ultra-long hollow semiconducting chalcogen and chalcogenide nanofibers. This procedure exploits electrospinning to fabricate ultra-long sacrificial nanofibers with controlled dimensions, morphology, and crystal structures, providing a large material database to tune electrode potentials, thereby imparting control over the composition and shape of the nanostructures that evolved during galvanic displacement reaction.

• Bulletin of the Korean Chemical Society
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• 제16권6호
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• pp.504-507
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• 1995

The reaction of Co2(CO)8 with 3,6-di-tert-butyl-1,2-benzoquinone in the presence of the respective 4,4'-chalcogenobispyridine results in the coordination polymers of [CoⅢ(4,4'-X(Py)2)(DBSQ)(DBCat)]n (X=S, Se, Te; Py=pyridine; DBSQ=3,6-di-tert-butylsemiquinone; DBCat=3,6-di-tert-butylcatechol). The title compounds undergo an intramolecular Cat → Co electron transfer, and thus change toward the [CoⅡ(4,4'-X(Py)2)(DBSQ)2]n at elevated temperature. The temperature-switching properties of the compounds directly depend upon the electronegativity of the chalcogen atom of the 4,4'-chalcogenobispyridine coligands. The spectroscopic data disclose that the properties of [CoⅢ(4,4'-S(Py)2)(DBSQ)(DBCat)]n and [CoⅢ(4,4'-Se(Py)2)(DBSQ)(DBCat)]n are similar each other in contrast to those of [CoⅢ(4,4'-Te(Py)2)(DBSQ)(DBCat)]n.

• Applied Microscopy
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• 제50권
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• pp.27.1-27.6
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• 2020

Transition metal dichalcogenides (TMD), which is composed of a transition metal atom and chalcogen ion atoms, usually form vacancies based on the knock-on threshold of each atom. In particular, when electron beam is irradiated on a monolayer TMD such as MoS₂ and WS₂, S vacancies are formed preferentially, and they are aligned linearly to constitute line defects. And then, a hole is formed at the point where the successively formed line defects collide, and metal clusters are also formed at the edge of the hole. This study reports a process in which the line defects formed in a monolayer WS₂ sheet expends into holes. Here, the process in which the W cluster, which always occurs at the edge of the formed hole, goes through a uniform intermediate phase is explained based on the line defects and the formation behavior of the hole. Further investigation confirms the atomic structure of the intermediate phase using annular dark field scanning transition electron microscopy (ADF-STEM) and image simulation.