• Title/Summary/Keyword: ceramic oxide layer

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The Influence of CuO on Bonding Behaviors of Low-Firing-Substrate and Cu Conductor (저온소성 기판과 Cu와의 동시소성에 미치는 CuO의 첨가효과)

  • 박정현;이상진
    • Journal of the Korean Ceramic Society
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    • v.31 no.4
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    • pp.381-388
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    • 1994
  • A new process which co-fires the low-firing-substrate and copper conductor was studied to achieve good bond strength and low sheet resistance of conductor. Cupric oxide is used as the precursor of conductive material in the new method and the firing atmosphere of the new process is changed sequently in air H2N2. The addition of cupric oxide and variations of firing atmosphere permited complete binder-burnout in comparison with the conventional method and contributed to the improvement of resistance and bonding behaviors. The potimum conditions of this experiment to obtain the satisfactory resistance and bond strength are as follows (binder-burnout temperature in air; 55$0^{\circ}C$, reducing temperature in H2; 40$0^{\circ}C$ for 30 min, ratio of copper and cupric oxide; 60:40~30:70 wt%). The bonding mechanism between the substrate and metal was explained by metal diffusion layer in the interface and the bond strength mainly depended on the stress caused by the difference of shrinkage and thermal expansion coefficient between the substrate and metal.

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Properties of IZTO Thin Films Deposited on PEN Substrates with Different Working Pressures

  • Park, Jong-Chan;Kang, Seong-Jun;Yoon, Yung-Sup
    • Journal of the Korean Ceramic Society
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    • v.52 no.3
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    • pp.224-227
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    • 2015
  • In this work, the properties of Indium-Zinc-Tin-Oxide (IZTO) thin films, deposited on polyethylene naphthalate (PEN) with a $SiO_2$ buffer layer, were analyzed with different working pressures. After depositing the $SiO_2$ buffer layer on PEN substrates by plasma-enhanced chemical vapor deposition (PECVD), the IZTO thin films were deposited by RF magnetron sputtering with 1 to 7-mTorr working pressure. All the IZTO thin films show an amorphous structure, regardless of the working pressure. The best morphological, electrical, and optical properties are obtained at 3-mTorr working pressure, with a surface roughness of 2.112-nm, a sheet resistance of $8.87-{\Omega}/sq$, and a transmittance at 550-nm of 88.44%. These results indicate that IZTO thin films deposited on PEN have outstanding electrical and optical properties, and the PEN plastic substrate is a suitable material for display devices.

Effect of Alumina Content on the Hot Corrosion of SiC by NaCl and Na2SO4 (NaCl과 Na$_2$SO$_4$에 의한 SiC 고온 부식에 미치는 Alumina 첨가량의 영향)

  • 이수영;고재웅;김해두
    • Journal of the Korean Ceramic Society
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    • v.28 no.8
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    • pp.626-634
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    • 1991
  • The specimens for the corrosion test were made by hot-pressing of SiC power with 2 wt% Nl2O3 and 10wt% Al2O3 additions at 200$0^{\circ}C$ and 205$0^{\circ}C$. The specimens were corroded in 37 mole% NaCl and 63 mole% Na2SO4 salt mixture at 100$0^{\circ}C$ up to 60 min. SiO2 layer was formed on SiC and then this oxide layer was dissolved by Na2O ion in the salt mixture. The rate of corrosion of the specimen containing 10 wt% Al2O3 was slower than that of the specimen containing 2 wt% Al2O3. This is due to the presence of continuous grain boundary phase in the specimen containing 10 wt% Al2O3. The oxidation of SiC produced gas bubbles at the SiC-SiO2 interface. The rate of corrosion follows a linear rate law up to 50 min. and then was accelerated. This acceleration is due to the disruption oxide layer by the gas evolution at SiC-SiO2 interface. Pitting corrosion has found at open pores and grain boundaries.

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Effect of Hydrophobizing Method on Corrosion Resistance of Magnesium Alloy with Plasma Electrolytic Oxidation (소수성 처리 방법에 따른 플라즈마 전해 산화 처리된 마그네슘 합금의 내식성)

  • Joo, Jaehoon;Kim, Donghyun;Jeong, Chanyoung;Lee, Junghoon
    • Journal of the Korean institute of surface engineering
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    • v.52 no.2
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    • pp.96-102
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    • 2019
  • Magnesium and its alloys are prone to be corroded, thus surface treatments improving corrosion resistance are always required for practical applications. As a surface treatment of magnesium alloys, plasma electrolytic oxidation (PEO), creating porous stable oxide layer by a high voltage discharge in electrolyte, enhances the corrosion resistance. However, due to superhydrophilicity of the porous oxide layer, which easily allow the penetration of corrosive media toward magnesium alloys substrate, post-treatments inhibiting the transfer of corrosive media in porous oxide layer are required. In this work, we employed a hydrophobizing method to enhance the corrosion resistance of PEO treated Mg alloy. Three types of hydrophobizing techniques were used for PEO layer. Thin Teflon coating with solvent evaporation, self-assembled monolayer (SAM) coating of octadecyltrichlorosilane (OTS) based on solution method and SAM coating of perfluorodecyltrichlorosilane (FDTS) based on vacuum method significantly enhances corrosion resistance of PEO treated Mg alloy with reducing the contact of water on the surface. In particular, the vacuum based FDTS coating on PEO layer shows the most effective hydrophobicity with the highest corrosion resistance.

Fabrication of Thin Solid Oxide Film Fuel Cells

  • Jee, Young-Seok;Chang, Ik-Whang;Son, Ji-Won;Lee, Jong-Ho;Kang, Sang-Kyun;Cha, Suk-Won
    • Journal of the Korean Ceramic Society
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    • v.47 no.1
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    • pp.82-85
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    • 2010
  • Recently, thin film processes for oxides and metal deposition, such as physical vapor deposition (PVD) and chemical vapor deposition (CVD), have been widely adapted to fabricate solid oxide fuel cells (SOFCs). In this paper, we presented two research area of the use of such techniques. Gadolinium doped ceria (GDC) showed high ionic conductivity and could guarantee operation at low temperature. But the electron conductivity at low oxygen partial pressure and the weak mechanical property have been significant problems. To solve these issues, we coated GDC electrolyte with a nano scale yittria-doped stabilized zirconium (YSZ) layer via atomic layer deposition (ALD). We expected that the thin YSZ layer could have functions of electron blocking and preventing ceria from the reduction atmosphere. Yittria-doped barium zirconium (BYZ) has several orders higher proton conductivity than oxide ion conductor as YSZ and also has relatively high chemical stability. The fabrication processes of BYZ is very sophisticated, especially the synthesis of thin-film BYZ. We discussed the detailed fabrication processes of BYZ as well as the deposition of electrode. This paper discusses possible cell structure and process flow to accommodate such films.

Properties Optimization for Perovskite Oxide Thin Films by Formation of Desired Microstructure

  • Liu, Xingzhao;Tao, Bowan;Wu, Chuangui;Zhang, Wanli;Li, Yanrong
    • Journal of the Korean Ceramic Society
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    • v.43 no.11 s.294
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    • pp.715-723
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    • 2006
  • Perovskite oxide materials are very important for the electronics industry, because they exhibit promising properties. With an interest in the obvious applications, significant effort has been invested in the growth of highly crystalline epitaxial perovskite oxide thin films in our laboratory. And the desired structure of films was formed to achieve excellent properties. $Y_1Ba_2Cu_3O_{7-x}$ (YBCO) superconducting thin films were simultaneously deposited on both sides of 3 inch wafer by inverted cylindrical sputtering. Values of microwave surface resistance R$_2$ (75 K, 145 GHz, 0 T) smaller than 100 m$\Omega$ were reached over the whole area of YBCO thin films by pre-seeded a self-template layer. For implementation of voltage tunable high-quality varactor, A tri-layer structured SrTiO$_3$ (STO) thin films with different tetragonal distortion degree was prepared in order to simultaneously achieve a large relative capacitance change and a small dielectric loss. Highly a-axis textured $Ba_{0.65}Sr_{0.35}TiO_3$ (BST65/35) thin films was grown on Pt/Ti/SiO$_2$/Si substrate for monolithic bolometers by introducing $Ba_{0.65}Sr_{0.35}RuO_3$ (BSR65/35) thin films as buffer layer. With the buffer layer, the leakage current density of BST65/35 thin films were greatly reduced, and the pyroelectric coefficient of $7.6\times10_{-7}$ C $cm^{-2}$ $K^{-1}$ was achieved at 6 V/$\mu$m bias and room temperature.

$Ba[Ce_{0.9}Y_{0.1}]O_{3-\delta}$ - Ni Composite Membrane for Hydrogen Separation by Aerosol Deposition Method (에어로졸 증착법[aerosol depostion method]에 의한 $Ba[Ce_{0.9}Y_{0.1}]O_{3-\delta}$ - Ni 수소분리막 제조)

  • Park, Young-Soo;Byeon, Myeong-Seob;Choi, Jin-Sub;Kim, Jin-Ho;Hwang, Kwang-Taek
    • Transactions of the Korean hydrogen and new energy society
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    • v.21 no.2
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    • pp.117-122
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    • 2010
  • BCY($Ba(Ce_{0.9}Y_{0.1})O_{3-\delta}$) oxide, shows high protonic conductivity at high temperatures, and are referred to as hydrogen separation membrane. For high efficiency of hydrogen separation ($H_2$ flux and selectivity) and low fabrication cost, ultimate thin and dense BCY-Ni layer have to be coated on a porous substrate such as $ZrO_2$. Aerosol depostion (AD) process is a novel technique to grow ceramic film with high density and nano-crystal structure at room-temperature, and would be applied to the fabrication process of AD integration ceramic layer effectively. XRD and SEM measurements were conducted in order to analyze the characteristics of BCY-Ni membrane fabricated by AD process.

The Influence of Surface Treatments on Shear Bond Strength between Zirconia Core and Heat Press Ceramic Interface (지르코니아 코어의 표면처리방법이 열 가압 세라믹과의 전단결합강도에 미치는 영향)

  • Park, Hang-Min;Chung, In-Sung
    • Journal of Technologic Dentistry
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    • v.31 no.2
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    • pp.23-30
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    • 2009
  • All-ceramic restorations have gained acceptance among clinicians and patients because of their superior esthetics. Most all-ceramic systems have a 2-layer structure, using a weak veneering ceramic over a strong supporting core. often, failure of all-ceramic restorations occurs when the veneering ceramic fractures, exposing the core material. The purpose of this study was to compare the shear bond strength of heat press ceramic system (Zirpress) to zirconia core with various surface treatments. 10 metal cores and 50 zirconia cores were fabricated and divided into six groups according to surface treatment such as Zirliner application, aluminium oxide blasting, and 9.5% HF etching. Sixty specimens were prepared using Zirpress, veneered 8mm height and 3mm in diameter, over the zirconia cores (n=10). The shear bond strength test was performed in a universal testing machine with a crosshead speed of 1/min. Ultimate shear bond strength data were analyzed with One-way ANOVA and the Scheffe's test (p=.05). Within the limits of this study, the following conclusions were drawn: The mean shear bond strengths (MPa) were: 12.93 for $110{\mu}m$ aluminium oxide blasting/Rexillium III/IPS e.Max Zirpress; 14.92 for $50{\mu}m$ aluminium oxide blasting ${\pm}9.5%$ HF etching/Zirconis core/IPS e.Max Zirpress; 16.37 for $110{\mu}$ aluminium oxide blasting + 9.5% HF etching/Zirconis core/IPS e.Max Zirpress; 12.89 for $200{\mu}$ aluminium oxide blasting + 9.5% HF etching/Zirconis core/IPS e.Max Zirpress; 19.30 for 9.5% HF etching/Zirconis core/IPS e.Max Zirpress; 19.55 for Zirliner/Zirconis core/IPS e.Max Zirpress. The mean shear bond strength for ZNTZH (Zirliner/Zirconis core) and ZNTEH (9.5% HF etching/Zirconis core) were significantly superior to MS110H ($110{\mu}$ aluminium oxide blasting/Rexillium III) and ZS200EH ($200{\mu}$ aluminium oxide blasting + 9.5% HF etching/Zirconis core) (p<0.05).

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Characteristic Study for Defect of Top Si and Buried Oxide Layer on the Bonded SOI Wafer (Bonded SOI wafer의 top Si과 buried oxide layer의 결함에 대한 연구)

  • Kim Suk-Goo;Paik Un-gyu;Park Jea-Gun
    • Korean Journal of Materials Research
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    • v.14 no.6
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    • pp.413-419
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    • 2004
  • Recently, Silicon On Insulator (SOI) devices emerged to achieve better device characteristics such as higher operation speed, lower power consumption and latch-up immunity. Nevertheless, there are many detrimental defects in SOI wafers such as hydrofluoric-acid (HF)-defects, pinhole, islands, threading dislocations (TD), pyramid stacking faults (PSF), and surface roughness originating from quality of buried oxide film layer. Although the number of defects in SOI wafers has been greatly reduced over the past decade, the turn over of high-speed microprocessors using SOI wafers has been delayed because of unknown defects in SOI wafers. A new characterization method is proposed to investigate the crystalline quality, the buried oxide integrity and some electrical parameters of bonded SOI wafers. In this study, major surface defects in bonded SOI are reviewed using HF dipping, Secco etching, Cu-decoration followed by focused ion beam (FIB) and transmission electron microscope (TEM).

Growth of Al2O3/Al Composite by Directed Metal Oxidation of Al Surface Doped with Sodium Source

  • Park, Hong Sik;Kim, Dong Seok;Kim, Do Kyung
    • Journal of the Korean Ceramic Society
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    • v.50 no.6
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    • pp.439-445
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    • 2013
  • Both an unreinforced $Al_2O_3$/Al matrix and a ${\alpha}-Al_2O_3$ particulate reinforced composite have been produced by the oxidation of an Al surface doped with NaOH in the absence of any other dopant. Fabrication of the matrix was initiated by the formation of $NaAlO_2$, which provides a favorable surface structure for the matrix formation by breaking the protective $Al_2O_3$ layer on Al. During the matrix growth, the external surface of the growth front was covered with a very thin sodium-rich oxide. A cyclic formation process of the sodium-rich oxide on the growth surface was proposed for the sodium-induced directed metal oxidation process. This process involves dissolution of the sodium-rich oxide, motion of Na to the growth front, and re-formation of the oxide on the surface. Near-net-shape composites were fabricated by infiltrating an $Al_2O_3$/Al matrix into a ${\alpha}-Al_2O_3$ particulate preform, without growth barrier materials. The infiltration distance increased almost linearly in the NaOH-doped preform.