• Journal of the Korean Ceramic Society
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• v.49 no.5
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• pp.432-437
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• 2012

Electrical properties of the laminated SMD-type PTC thermistor for microcircuit protection were investigated as a function of calcination and sintering temperature. $BaTiO_3$ with $Y_2O_3$ and $MnO_2$ were calcined at 1000 to $1150^{\circ}C$ for 2h and the laminated SMD-type PTC thermistor was sintered at 1350 to $1400^{\circ}C$ for 2h in a reduced atmosphere (1% $H_2/N_2$). Sintered density of the sample was dependent on the calcination and sintering temperature. Electrical properties of the sintered samples were strongly dependent on the densities of samples. For the samples with density below 4.6 g/$cm^3$, the insulator characteristics were observed, while PTC jump characteristics (R150/R30) were disappeared for the sample with density above 5.05 g/$m^3$. Optimal PTC characteristics were obtained for the sintered samples with density of 5.05 g/$m^3$. The laminated SMD-type PTC thermistor prepared by calcination at $1100^{\circ}C$ for 2h and sintering at $1270^{\circ}C$ for 2h showed the room temperature resistivity of $11{\Omega}{\cdot}cm$ and PTC jump characteristics of $10^2$ order.

• Journal of the Korean Ceramic Society
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• v.28 no.8
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• pp.619-625
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• 1991

The current-voltage characteristics of the semiconducting BaTiO3 ceramics are measured in the range of 0.01∼100 Volt. Non ohmic behavior was observed above Tc. This behavior is not dependent on specimen thickness and is not observed at the incomplete semiconducting sepcimen. From this experiment, non-ohmic behavior of PTC is attributed to Heywang's potential barrier not to space change limited current. In the low voltage range, current-voltage characteristics of PTC ceramics can be explained by Heywang model.

• Journal of the Korean Ceramic Society
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• v.49 no.1
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• pp.124-129
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• 2012

An M-shaped SiC gas igniter was fabricated by a reaction sintering followed by nitrogen doping. The igniter showed both resistivity at room temperature and NTC to PTC transition temperature values that were lower than those of commercial igniters. It was deduced that the doped nitrogen reduces the electrical resistivity at room temperature, while, at high temperature, the doped nitrogen and a trace of $Si_3N_4$ phase work as scattering centers against electron transfer, resulting in a lowered NTC-to-PTC transition point (below $650^{\circ}C$). Such characteristics were correlated to the fast heating speed (as compared to the commercial models) and to the prevention of the high temperature overshooting of the nitrogen-doped SiC igniter.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.11a
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• pp.179-179
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• 2008

$BaTiO_3$를 기본조성으로 하는 PTC 써미스터는 Curie 온도이상에서 저항이 급격히 상승하는 산화물 반도체 세라믹이다. 이러한 성질을 이용하여 degaussing 소자, 정온 발열체, 온도센서, 전류 제한소자 등 상업적으로 여러 분야에서 연구되고 있다. 또한 원가절감 등을 위하여 Ni 내부전극을 사용하여 환원 분위기에서 소결하는 칩 타입에 대한 연구가 진행되고 있다. 본 연구에서는 Sm 함량(0.1at%~1.0at%)을 달리한 $BaTiO_3$(Si, Mn, Ca) 계를 선택하여 3%$H_2/N_2$ 분위기에서 1200~$1260^{\circ}C$, 2h 소결한 후 공기 중에서 재산화 처리하고 재산화 시간에 따른 PTC 특성 변화에 대하여 고찰하였다. 재산화 온도와 시간은 각각 $800^{\circ}C$와 0.5h~10h으로 하였다. Sm 함량을 달리하여 환원 분위기에서 소결한 시편의 미세구조와 PTC 특성과의 상관관계를 관찰한 결과, 소결온도가 낮을수록 PTC 특성은 좋아졌으며, 상온 비저항은 Sm 함량이 높아질수록 낮아졌다. 또한 Sm 함량이 높아질수록 jumping ratio$(R_{max}/R_{25^{\circ}C})$는 낮아졌다. 재산화 시간에 따른 PTC 특성은 다소 떨어졌지만 소결온도에 따라 달리 나타났다. Jumping ratio$(R_{max}/R_{25^{\circ}C})$는 Sm을 0.7 at% 첨가한 계에서 재산화를 1시간 처리한 시편에서 가장 우수하였다.

• Journal of the Korean Ceramic Society
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• v.38 no.3
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• pp.256-260
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• 2001

본 연구에서는 Sbrk 치환된 BaTiO$_3$에 그라파이트를 첨가하고 고상반응법을 이용하여 PTC 소자를 제조한 후, 저항-온도 특성을 조사하였으며 미세구조 분석을 통하여 그라파이트 첨가로 인한 PTC 특성 변화를 고찰하였다. 시편의 저항-온도 특성은 자체 제작한 저항-온도 특성 자동 측정 시스템을 사용하였으며 미세구조 고찰은 주사 전자 현미경을 사용하였다. 상온 저항값은 그라파이트를 1.5 mol% 첨가한 시편이 8.8Ω.cm로 가장 낮은 저항값을 나타내었고 저항-온도 계수는 그라파이트를 3.0 mol% 첨가한 시편이 22.4%/$^{\circ}C$로 가장 좋은 PTC 효과를 보였다. 미세구조 고찰 결과 그라파이트를 1.5 mol% 첨가한 경우 90$^{\circ}$ 및 180$^{\circ}$전계구조가 상당히 발달되었음을 볼수 있었다.

• Journal of the Korean Ceramic Society
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• v.43 no.11 s.294
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• pp.673-679
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• 2006

The discovery of ferroelectric barium titanate (BaTiO$_3$) in 1942 began the present era of dielectrics-based electronic ceramics. Ferroelectric barium titanate has a high dielectric constant and after the recognition of BaTiO$_3$ as a new ferroelectric compound, various attractive electrical properties have been extensively studied and reported. Since then, pioneering work on valence-compensated semiconduction led to the discovery of the positive temperature coefficient (PTC) of the resistance effect found in doped BaTiO$_3$. Significant progress has since followed with respect to understanding the PTC phenomena, advancing materials capabilities, and developing devices for sensor and switching applications. In this paper, the theoretical aspects of the various PTC models are discussed and the future trends of practical applications for PTC devices are briefly mentioned.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.11a
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• pp.180-181
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• 2008

화학양론적 $BaTiO_3$의 소결은 고온의 에너지를 필요로 하며, 내부전극과 세라믹충의 동시소성과정에서 Ni이 세라믹층으로의 확산이 발생되어 PTC의 물성저하를 초래한다. 본 연구에서는 저온에서 액상을 형성하여 소결온도를 낮추는 것으로 알려진 산화물 및 비산화물계 소결첨가제가 적층 PTC 세라믹스의 미세구조 및 전기적 특성에 미치는 영향에 대하여 고찰하였다. 소결과정에서 분해되어 기체를 형성하는 BN, $Li_2CO_3$, LiF의 경우 기공율을 증가시켜 산소의 이동경로를 형성하였으며, 이는 입계의 재산화를 용이하게 하여 PTC 효과를 보였다.

• Journal of the Korean Ceramic Society
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• v.38 no.7
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• pp.639-642
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• 2001

전형적인 비저항-온도 특성을 갖는 BaTiO$_3$계 PTC 세라믹을 일반적인 세라믹 공정을 이용하여 제조하였고, 결정립계면에 형성된 전위장벽의 높이를 구하였다. ZnO 바리스터의 전위장벽을 구하기 위해 이용되었던 커패시턴스-전압 관계식과는 다른 새로운 관계식을 제안하였고, 기존의 비저항-온도 관계식을 다소 변경한 관계식을 이용하여 전위장벽을 구하였다. 두 관계식으로부터 구한 전위장벽의 높이는 매우 유사한 값을 보이고 있으며 타 연구자들에 의해 보고된 값과도 잘 일치하고 있다. 비저항-온도 관계식과 커패시턴스-전압 관계식을 이용하여 130-18$0^{\circ}C$ 구간에서 구한 전위장벽의 크기는 각각 0.41-0.76V와 0.36-0.80V이었다.

• Journal of the Korean Ceramic Society
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• v.33 no.11
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• pp.1231-1236
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• 1996

The electrode resistance of semiconducting PTC BaTiO3 ceramic material was studied in some detail. Comme-rical In-Ag paste In-Ga alloy and electroless plated Ni as well as evaporated Al were chosen as electrode. The contact resistance of electroded samples were measured by both dc resistivity and ac impedance analysis. The aging effect on contact resistance under cyclic loading from -1$0^{\circ}C$ to 85$^{\circ}C$ was also monitored for the prolonged period of time. In case of Al electroded samples the heat treatment and protective coating had effects on the stability against contact resistance degradation. It was also found that the samples with commercial In-Ag paste and electroless plated Ni electrode had good properties of contact resistance against aging.

• Journal of the Korean Ceramic Society
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• v.46 no.3
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• pp.330-335
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• 2009

We investigated the effects of the re-oxidation temperature and time on the positive temperature coefficient (PTC) of resistivity characteristics of Sm-doped $BaTiO_3$ sintered at $1200{\sim}1260^{\circ}C$ for 2 h in a reducing atmosphere (3% $H_2/N_2$), followed by re-oxidization processes in air, in which re-oxidization temperature and time were $600{\sim}1000^{\circ}C$ and $1{\sim}10$h, respectively. The result reveals that Smdoped (Ba,Ca)$TiO_3$ ceramics fired in a reducing atmosphere exhibit low PTC characteristics, whereas the sample re-oxidized at $800^{\circ}C$ for 1 h in air exhibit pronounced PTC characteristics. The room-temperature resistivity and jumping characteristics of resistivity (${\rho}_{max}/{\rho}25^{\circ}C$) decrease with Sm contents. The PTC characteristics with reoxidization time at $800^{\circ}C$ have improved about $2{\sim}3$ orders of magnitude whereas differed according to the sintering temperature. The 0.7 at% Sm-doped (Ba,Ca)$TiO_3$ samples reveal the best PTC characteristics in the present range of formula and processes.