• 한국재료학회:학술대회논문집
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• 한국재료학회 1998년도 IUMRS-ICEM ABSTRACT BOOK
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• pp.95.3-95
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• 1998

• 한국진공학회:학술대회논문집
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• 한국진공학회 2016년도 제50회 동계 정기학술대회 초록집
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• pp.352.2-352.2
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• 2016

In recent times, much effort has been concentrated on trivalent rare-earth ions activated ceramics or oxide phosphors to develop display industries due to their promising applications in optoelectronic devices and field-emission displays. To prepare efficient phosphors, citrate sol-gel method is one of the best synthetic methods. Green and blue emissive CaLa2ZnO5:RE3+ nanocrystalline materials are synthesized by a citrate sol-gel method. After the samples annealing at $1100^{\circ}C$, morphological and structural properties are investigated by scanning electron microscope images and X-ray diffraction patterns, respectively. At low electron beam voltage of <5 kV, the visible photoluminescence properties are obtained. Various concentrations of the RE3+ ions exhibited their characteristic emission peaks at different excitation wavelengths, respectively. Similarly, at high electron beam anodic voltage, the cathodoluminescence properties are studied as a function of acceleration voltage and filament current. The chromaticity coordinates are calculated for the optimized CaLa2ZnO5 nanocrystalline luminescent materials.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2015년도 제49회 하계 정기학술대회 초록집
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• pp.170.2-170.2
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• 2015

Enormous interest in trivalent rare-earth (RE) ions activated luminescent materials has been gaining owing to their promising applications in bio-imaging, solar cells, white light-emitting diodes and field-emission displays. Among these trivalent RE ions, dysprosium (Dy3+) was widely investigated due to its unique photoluminescence (PL) emissions. A series of Dy3+-activated CaWO4 phosphors were prepared by a facile high-temperature solid-state reaction method. The X-ray diffraction, PL spectra, cathodoluminescence (CL) spectra as well as PL decay curves were used to characterize the prepared samples. Under ultraviolet light excitation, the characteristic emissions of Dy3+ ions were observed in all the obtained phosphors. Furthermore, the PL emission intensity increased gradually with the increment of Dy3+ ion concentration, reaching its maximum value at an optimized Dy3+ ion concentration. Additionally, color-tunable emissions were obtained in Dy3+-activated CaWO4 system by adjusting the Dy3+ ion concentration and excitation wavelength. Ultimately, strong CL properties were observed in Dy3+-activted CaWO4 phosphors. These results suggested that the Dy3+-activted CaWO4 phosphors may have potential applications in the field of miniature color displays.

• 한국전기전자재료학회논문지
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• 제15권3호
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• pp.258-263
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• 2002

We present a new toed phosphor, $Gd_{2-x-y}Li_xEu_yO_3$ with superior luminescent Properties compared to the commercially available red phosphor $Y_2O_3:Eu^{3+}$. The phosphor, with a diameter of about $2\mu\textrm{m}$, consists of the psedospherical particles in a regular array. The photoluminescence measurements as a function of the laser power and the Eu mole fraction were performed at zoom temperature The luminescence intensity linearly increases as both the laser power and the Eu mole fraction Increase. As for the dependence on cathodoluminescence, the incorporation of Eu and Li ions into $Gd_2O_3$ lattice brings about an increase in luminescent efficiency. The highest emission intensity for the phosphor occurs at the applied voltage of 500 V, its value is larger than that of $Y_2O_3:Eu^{3+}$ powder by 70%.

• The Korean Journal of Ceramics
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• 제3권4호
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• pp.245-248
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• 1997

Photoluminescence (PL) and cathodoluminescence (CL) characteristics of Ce-activated $Y_{2-x}Ce_xSiO_5$ have been investigated as functions of Ce concentration and firing condition. According to the X-ray, PL and CL results, $Y_2SiO_5$ is found to have two phases depending on the firing temperature. For the specimen fired above 127$0^{\circ}C$, the emission band peaked at 395nm with a shoulder at 424 nm under ultraviolet (u.v.) and cathode-ray (c.r.) excitation. However, for the specimen fired below 120$0^{\circ}C$ in air the peak was observed at 424 nm and it shifted to longer wavelength with reduction level. The reduced specimen for x=0.02 showed the brightest emission under u.v. excitation whereas under c.r. excitation the brightest emission was observed for the reduced specimen for x=0.06.

• 한국전기전자재료학회논문지
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• 제17권12호
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• pp.1347-1351
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• 2004

The ZnGa$_2$O$_4$ phosphor target was synthesized through solid-state reactions as calcine and sintering temperature in order to deposit ZnGa$_2$O$_4$ Phosphor thin film by rf magnetron sputtering system. The x-ray diffraction patterns of ZnGa$_2$O$_4$ phosphor target showed the position of (311) main peak. The cathodoluminescence(CL) spectrums of ZnGa$_2$O$_4$ phosphor target showed main peak of 370 nm to 400 nm, and maximum intensity at the calcine temperature of $700^{\circ}C$ and sintering temperature of 130$0^{\circ}C$. It was possible to prepare The ZnGa$_2$O$_4$ phosphor thin film with synthesized ZnGa$_2$O$_4$ phosphor target and The prepared ZnGa$_2$O$_4$ phosphor thin film showed the position of (311) main peak.

• The Korean Journal of Ceramics
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• 제4권1호
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• pp.15-19
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• 1998

Defects formation of Chemical Vapor Deposition (CVD) diamond on $^4He^{2+}$ irradiation and after remote hydrogen plasma treatment(RHPT) were investigated by cathodoluminescence(CL). As calculated in the TRIM simulation, the light elements of $^4He^{2-}$ can be penetrated into the diamond bulk structure at 3~4 $\mu\textrm{m}$ depth. The effects of the implantation region were observed when 5 keV~20 keV electron energy (insight 0.3~4.0$\mu\textrm{m}$) of CL measurement was irradiated to diamond at temperature 80 K. After the RHPT, rehybridization of irradiation damaged diamond was studied. The intensity of 5RL center(intrinsic defect of C) was diminished. The 2.16 eV center (N-V center) occurring usually by annealing could not be seen after RHPT. The diamond was rehybridized by hydrogen radicals without etching and thermal degradation by the RHPT.

• 한국세라믹학회지
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• 제35권7호
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• pp.757-763
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• 1998

The effect of {{{{ {Ga }^{3+ } }} addition on the photoluminescence and cathodoluminescence of {{{{ {SrTiO}_{3 } }}:{{{{ { Pr}^{3+ } }} was stu-died by performing the excitation emission and decay time measurements. Addition of {{{{ {Ga }^{3+ } }} in {{{{ {SrTiO}_{3 } }}:{{{{ { Pr}^{3+ } }} resulted in a considerable enhancement of {{{{ { Pr}^{3+ } }} emission intensity. From the analysis of the experimental results the following mechanism is proposed. Excitation in the {{{{ {SrTiO}_{3 } }} host lattice leads to the formation of electrons in the conduction band and holes in the valence band. The electrons in the conduction band re-combine radiatively with the holes trapped at {{{{ { Ga}^{3+ } }} and the energy is transferred to {{{{ { Pr}^{3+ } }} ion which give its own characteristic red emission.

• 한국전기전자재료학회논문지
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• 제22권8호
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• pp.677-681
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• 2009

$In_xGa_{1-x}N$ alloys with 20-nm-thickness were deposited onto Mg:GaN/AlN/SiC substrates by MOCVD at $800\;^{\circ}C$. TMGa, TMIn and $NH_3$ were used as the precursor of gallium, indium and nitrogen, respectively. The mole ratio of indium in $In_xGa_{1-x}N$ films varied between 0 and 0.2. The energy-band-gaps of the films were obtained from the photoluminescence and cathodoluminescence peaks. The mole ratios of $In_xGa_{1-x}N$ films were calculated by applying Vegard's law to XRD results. The energy-band-gap versus indium composition plot for $In_xGa_{1-x}N$ alloys were well fit with a bowing parameter of 2.27.

• 전자공학회논문지D
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• 제36D권5호
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• pp.63-68
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• 1999

본 논문에서는 저압 유기 금속 화학증착법으로 성장시킨 GaN박막들을 실온 케소드루미네슨스 방법으로 광학적 특성을 측정하여 결정성장 메커니즘과 광학적 특성과의 관계를 규명하였다. 관측된 스펙트럼은 주로 364nm의 강한 band-edge emission 피크와 550nm의 깊은 준위 피크이었다. 빔 전류의 증가에 따라 364nm 스펙트럼의 세기가 깊은 준위 발광 스펙트럼보다 크게 증가시켰다. 이는 성장 초기 GaN박막의 결정 결함이 깊은 준위 발광 스펙트럼과 깊은 관계가 있음을 나타내 주고 있다. 또한 미세 결정 구조와 깊은 준위 발광 스펙프럼과의 관계 분석을 위해 주사형 전자현미경 사진과 캐소드루미네슨스 스펙트럼을 비교 검토하였다.