• 한국신재생에너지학회:학술대회논문집
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• 한국신재생에너지학회 2008년도 춘계학술대회 논문집
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• pp.431-431
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• 2008

• Current Photovoltaic Research
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• 제7권4호
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• pp.125-129
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• 2019

Recently, carrier-selective contact solar cells have attracted much interests because of its high efficiency with low recombination current density. In this study, we investigated the effect of phosphorus doped amorphous silicon layer's characteristics on the passivation properties of tunnel oxide passivated carrier-selective contact solar cells. We fabricated symmetric structure sample with poly-Si/SiOx/c-Si by deposition of phosphorus doped amorphous silicon layer on the silicon oxide with subsequent annealing and hydrogenation process. We varied deposition temperature, deposition thickness, and annealing conditions, and blistering, lifetime and passivation quality was evaluated. The result showed that blistering can be controlled by deposition temperature, and passivation quality can be improved by controlling annealing conditions. Finally, we achieved blistering-free electron carrier-selective contact with 730mV of i-Voc, and cell-like structure consisted of front boron emitter and rear passivated contact showed 682mV i-Voc.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2016년도 제50회 동계 정기학술대회 초록집
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• pp.308-309
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• 2016

Reducing surface recombination is a critical factor for high efficiency silicon solar cells. The passivation process is for reducing dangling bonds which are carrier. Tunnel oxide layer is one of main issues to achieve a good passivation between silicon wafer and emitter layer. Many research use wet-chemical oxidation or thermally grown which the highest conversion efficiencies have been reported so far. In this study, we deposit ultra-thin tunnel oxide layer by PECVD (Plasma Enhanced Chemical Vapor Deposition) using $N_2O$ plasma. Both side deposit tunnel oxide layer in different RF-power and phosphorus doped a-Si:H layer. After deposit, samples are annealed at $850^{\circ}C$ for 1 hour in $N_2$ gas atmosphere. After annealing, samples are measured lifetime and implied Voc (iVoc) by QSSPC (Quasi-Steady-State Photo Conductance). After measure, samples are annealed at $400^{\circ}C$ for 30 minute in $Ar/H_2$ gas atmosphere and then measure again lifetime and implied VOC. The lifetime is increase after all process also implied VOC. The highest results are lifetime $762{\mu}s$, implied Voc 733 mV at RF-power 200 W. The results of C-V measurement shows that Dit is increase when RF-power increase. Using this optimized tunnel oxide layer is attributed to increase iVoc. As a consequence, the cell efficiency is increased such as tunnel mechanism based solar cell application.

• JSTS:Journal of Semiconductor Technology and Science
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• 제15권1호
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• pp.35-40
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• 2015

In this study, an n-ZnO/p-Si heterojunction diode with embedded Ag nanoparticles was fabricated to investigate the possible improvement of light trapping via the surface plasmon resonance effect for solar cell applications. The Ag nanoparticles were fabricated by the physical sputtering method. The acquired current-voltage curves and optical absorption spectra demonstrated that the application of Ag nanoparticles in the n-ZnO/p-Si interface increased the photo current, particularly in specific wavelength regions. The results indicate that the enhancement of the photo current was caused by the surface plasmon resonance effect generated by the Ag nanoparticles. In addition, minority carrier lifetime measurements showed that the recombination losses caused by the Ag nanoparticles were negligible. These results suggest that the embedding of Ag nanoparticles is a powerful method to improve the performance of n-ZnO/p-Si heterojunction solar cells.

• 한국전기전자재료학회논문지
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• 제30권3호
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• pp.139-143
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• 2017

N-type crystalline silicon solar cells have high metal impurity tolerance and higher minority carrier lifetime that increases conversion efficiency. However, junction quality between the boron diffused layer and the n-type substrate is more important for increased efficiency. In this paper, the current status and prospects for boron diffused layers in N-type crystalline silicon solar cell applications are described. Boron diffused layer formation methods (thermal diffusion and co-diffusion using $a-SiO_X:B$), boron rich layer (BRL) and boron silicate glass (BSG) reactions, and analysis of the effects to improve junction characteristics are discussed. In-situ oxidation is performed to remove the boron rich layer. The oxidation process after diffusion shows a lower B-O peak than before the Oxidation process was changed into $SiO_2$ phase by FTIR and BRL. The $a-SiO_X:B$ layer is deposited by PECVD using $SiH_4$, $B_2H_6$, $H_2$, $CO_2$ gases in N-type wafer and annealed by thermal tube furnace for performing the P+ layer. MCLT (minority carrier lifetime) is improved by increasing $SiH_4$ and $B_2H_6$. When $a-SiO_X:B$ is removed, the Si-O peak decreases and the B-H peak declines a little, but MCLT is improved by hydrogen passivated inactive boron atoms. In this paper, we focused on the boron emitter for N-type crystalline solar cells.

• Transactions on Electrical and Electronic Materials
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• 제4권6호
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• pp.17-20
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• 2003

This paper describes the effect of halogenic gettering during oxide passivation of commercial solar cell with the $N^{+}$-P-$N^{+}$ structure. In order to study the effect of halogenic gettering on $N^{+}$-P-$N^{+}$ structure mono-crystalline silicon solar cell, we performed conventional POCl$_3$ diffusion for emitter formation and oxide passivation in the presence of HCl vapors. The $N^{+}$-P-$N^{+}$ structure based silicon solar cells were found to have higher short circuit current and minority carrier lifetime. Their performance was also found to be superior than the conventional $N^{+}$-P-$N^{+}$ structure based mono-crystalline silicon solar cell. The cell parameters of the $n^{+}$-p-$p^{+}$ and $n^{+}$-p-$n^{+}$ structure based cells, passivated by HCl assisted oxidation were measured. The improvement in $I_{sc}$ was attributed to the effect of the increased diffusion length of minority carriers, which came from the halogenic gettering effect during the growth of passivating oxide. The presence of chlorine caused gettering of the cells by removing the heavy metals, if any. The other advantage of the presence of chlorine was the removal of the diffusion induced (in oxygen environment) stacking faults and line defects from the surfaces of the silicon wafers. All these effects caused the improvement of the minority carrier lifetime, which in-turn helped to improve the quality of the solar cells.

• Current Photovoltaic Research
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• 제11권2호
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• pp.39-43
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• 2023

Carrier-selective contacts (CSCs) solar cells are considerably attractive on highly efficient crystalline silicon heterojunction (SHJ) solar cells due to their advantages of high thermal tolerance and the simple fabrication process. CSCs solar cells require a hole selective contact (HSC) layer that selectively collects only holes. In order to selectively collect holes, it must have a work function characteristic of 5.0 eV or more when contacted with n-type Si. The VO_x, NiO_x, and CuI_x thin films were fabricated and analyzed respectively to confirm their potential usage as a hole-selective contact (HSC) layer. All thin films showed characteristics of band-gap engergy > 3.0 eV, work function > 5.0 eV and minority carrier lifetime > 1.5 ms.

• 한국신재생에너지학회:학술대회논문집
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• 한국신재생에너지학회 2010년도 추계학술대회 초록집
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• pp.55.2-55.2
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• 2010

최근 태양전지에 대한 연구가 본격적으로 진행 중인 가운데 Local back contact 태양전지에 대한 연구가 새로운 이슈로 떠오르고 있다. LBC 구조의 태양전지는 후면 passivation에 대한 최적화 공정이 가장 중요하다. 후면 passivation으로 사용되는 물질로는 $SiO_2$, SiNx, $Al_2O_3$ 등의 산화막이 대표적이다. 본 연구에서는 LBC 구조 태양전지의 후면 passivation 박막으로 사용되는 $SiO_2$ 산화막의 공정가변에 따른 박막의 특성을 비교 분석하였다. $SiO_2$ 성장은 RTP를 사용하였다. 성장 온도 $850^{\circ}C$의 온도에서 진행하였으며, 4L/min의 $O_2$분위기에서 진행하였다. 공정 시간 5분 일 때 12.5nm, 15분 일 때 21.7nm의 두께의 박막을 성장 시킬 수 있었다. Carrier lifetime 확인 결과 박막의 두께가 얇을수록 lifetime이 향상함을 확인 할 수 있었고, C-V 측정을 통한 charge 비교를 통해 두께가 얇은 박막 일수록 더 적은 positive charge를 갖고있는 것을 확인 할 수 있었으며 이를 통해 passivation 효과가 우수함을 확인 할 수 있었다.

• 한국전기전자재료학회논문지
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• 제27권7호
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• pp.438-442
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• 2014

Channel length dependence of NBTI (negative bias temperature instablilty) and CHC (channel hot carrier) characteristics in PMOSFET is studied. It has been considered that HC lifetime of PMOSFET is larger than NBTI lifetime. However, it is shown that CHC degradation is greater than NBTI degradation for PMOSFET with short channel length. 1/f noise and charge pumping measurement are used for analysis of these degradations.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2001년도 하계학술대회 논문집
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• pp.1096-1099
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• 2001

The basic design structure of RC-GCTs (Reserve-Conducting Gate-Commutated Thyristors) is firstly given in this paper. The bulk of wafer is punch-through (PT) type with high resistivity and narrow N-base width. The photo-mask was designed upon the turn-off characteristics of GCT and solution of separation between GCT and diode part. The center part of Si wafer is free-wheeling diode (FWD) and outer is GCT part which has 240 fingers totally. The switching performance of GCT was investigated by Dessis of ISE. The basic manufacture process of 2500V-4500V RC-GCTs was given in this work. Additionally, the local carrier lifetime control by 5Mev proton irradiation was adopted so as to not only to have the softness of reverse recovering for FWD but for reduction of turn-off losses of GCT as well.