• Journal of the Korean Vacuum Society
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• v.9 no.3
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• pp.197-206
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• 2000

The deposition characteristics of MOCVD Cu using the (hfac)Cu(1,1-COD)(1,1,1,5,5,5-hexafluoro-2,4-pentadionato Cu(I) 1,5-cyclooctadine) have been investigated in terms of the effects of carrier gas such as hydrogen and argon as well as the effects of H(hfac) ligand addition. MOCVD Cu using a hydrogen carrier gas led to a higher deposition rate and lower resistivity than an argon carrier gas system. The improvement in the surface roughness of the MOCVD Cu films and the (111) preferred orientation texture was obtained by using a hydrogen carrier gas. However, the adhesion characteristics of the films showed relatively weaker compared to the Ar carrier gas system, probably due to the larger amount of F content in the films, which was confirmed by the AES analyses. When an additional H(hfac) ligand was added, the deposition rate was significantly enhanced in the case of an argon + H(hfac) carrier gas system while significant change in the deposition rate of MOCVD Cu was not observed in the case of the hydrogen carrier gas system. However, the addition of H(hfac) in both carrier gases led to lowering the resistivity of the MOCVD Cu films. In conclusion, this paper suggests the deposition mechanism of MOCVD Cu and is expected to contribute to the enhancement of smooth Cu films with a low resistivity by manipulating the deposition conditions such as the carrier gas and addition of H(hfac) ligand.

• Journal of Welding and Joining
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• v.5 no.2
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• pp.17-26
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• 1987

In this study, the experiments were carried out for the purpose of establishment of the arc sparing method which reducing oxides or oxide film by using the inert gas as the carrier gas of atomizing particles. Main results obtained are as follows; 1. Oxides and oxide film which lower the adhesion strength are largely reduced by using the inert gas as the carrier gas of atomizing particles, and adhesion strength of coating film are improved. 2. The coating film characteristics appear to be no difference between the inert gas arc spraying in air environment and that in argon gas environment. 3. Inert gas arc spraying using argon as the carrie gas has higher reduction rate of composition element in coating film than compressed air spraying does.

• Journal of Powder Materials
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• v.20 no.1
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• pp.24-32
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• 2013

The effect of carrier gases (He, $N_2$) on the properties of Ti coating layers were investigated to manufacture high-density Ti coating layers. Cold spray coating layers manufactured using He gas had denser and more homogenous structures than those using $N_2$ gas. The He gas coating layers showed porosity value of 0.02% and hardness value of Hv 229.1, indicating more excellent properties than the porosity and hardness of $N_2$ gas coating layers. Bond strengths were examined, and coating layers manufactured using He recorded a value of 74.3 MPa; those manufactured using $N_2$ gas had a value of 64.6 MPa. The aforementioned results were associated with the fact that, when coating layers were manufactured using He gas, the powder could be easily deposited because of its high particle impact velocity. When Ti coating layers were manufactured by the cold spray process, He carrier gas was more suitable than $N_2$ gas for manufacturing excellent coating layers.

• Journal of the Korean Chemical Society
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• v.30 no.3
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• pp.327-332
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• 1986

Spatial (radial and height) distribution of electron number density is measured for an inductively coupled plasma under five operating conditions: (1) no carrier gas, (2) carrier gas without aerosel, (3) carrier gas with aerosol, (4) carrier gas with desolvated aerosol, and (5) carrier gas with aerosol and excess lithium. A complete RF power mapping of electron density is obtained. The plasma electrons for a typical analytical torch are observed to be hollow at the radial center in the region close to the induction coil, but diffuse rapidly toward the center in the higher region of the plasma. The presence of excess Li makes no significant change in the electron density profiles. The increases in the RF power levels increase the values of electron density uniformly across the radial coordinate.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.11a
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• pp.89-90
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• 2007

This paper presents the mechanical properties of 3C-SiC thin film according to 0, 7, and 10% carrier gas $(H_2)$ concentrations using Nano Indentation. When carrier gas $(H_2)$ concentration was 10%, it has been proved that the mechanical properties, elastic modulus and hardness, of 3C-SiC are the best of them. In the case of 10% carrier gas concentration, Young's modulus and Hardness were obtained as 367 GPa and 36 GPa, respectively. When the surface roughness according to $H_2$ concentrations was investigated by AFM (atomic force microscope), when $H_2$ concentration was 10%, the roughness of 3C-SiC thin was 9.92 nm, which is also the best of them. Therefore, in order to apply poly 3C-SiC thin film to MEMS applications, $H_2$ concentration's rate should increase to obtain better mechanical properties and surface roughness.

• Special Issue of the Society of Naval Architects of Korea
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• 2007.09a
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• pp.89-93
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• 2007

The Boil-off gas (BOG) generation during the voyage is inevitable since Natural Gas (NG) in normally liquefied below -160 degree C in atmosphere condition and small heat ingress due to relatively hot outside keeps evaporating continuously. The one of major issue in LNG carriers is to handle generated BOG from cargo tank. The generated BOG affects to increase the cargo tank pressure and Gas Management System (GMS) for LNG carriers is closely related to cargo tank pressure maintenance. Economically, BOG is generally used as fuel in LNG carrier. Newly developed GMS for LNG carrier in boiler propulsion system, VaCo System, not only accomplish automatic control in GMS but also ensure safer operation.

• 한국태양에너지학회:학술대회논문집
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• 2011.11a
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• pp.154-157
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• 2011

Hydrogenated silicon nitride deposited by LF-PECVD is commonly used for anti-reflection coating and passivation in silicon solar cell fabrication. The deposition of the optimized silicon nitride on the surface is elemental in crystalline silicon solar cell. In this work, the carrier lifetimes were measured while the thicknesses of $SiN_x$ were changed from 700 ${\AA}$ to 1150 ${\AA}$ with the gas flow of $SiH_4$ as 40 sccm and $NH_3$ as 120 sccm,. The carrier lifetime enhanced as the thickness of $SiN_x$ increased due to improved passivation effect. To study the characteristics of $SiN_x$ with various gas ratios, the gas flow of $NH_3$ was changed from 40 sccm to 200 sccm with intervals of 40 sccm. The thickness of $SiN_x$ was fixed as 1000 ${\AA}$ and the gas flow of $SiH_4$ as 40 sccm. The refractive index of SiNx and the carrier lifetime were measured before and after heat treating at $650^{\circ}C$ to investigate their change by the firing process in solar cell fabrication. The index of refraction of SiNx decreased as the gas ratios increased and the longest carrier lifetime was measured with the gas ratio $NH_3/SiH_4$ of 3.

• 한국정보디스플레이학회:학술대회논문집
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• 2005.07b
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• pp.1477-1479
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• 2005

In this work, the ITO thin films were prepared by FTS (Facing Targets Sputtering) system under different sputtering conditions which were varying $O_2$ gas flow, input current at room temperature. As a function of sputtering conditions, electrical and optical properties of prepared ITO thin films were measured. The electrical, optical characteristics and surface roughness of prepared ITO thin films were measured. In the results, as increasing $O_2$ gas 0.1[sccm] to 0.7[sccm], resistivity of ITO thin film was increased with a decreasing carrier concentration, $O_2$ gas over 0.3[sccm] the carrier mobility have a similarly value. Transmittance of prepared ITO thin films were improved at increasing $O_2$ gas 0.1[sccm] to 0.7[sccm]. And transmittance of all of the prepared ITO thin films was over 80%. We could obtain resistivity $6.19{\times}10^{-4}[{\omega}{\cdot}cm]$, carrier mobility $22.9[cm^2/V{\cdot}sec]$, carrier concentration $4.41{\times}10^{20}[cm^{-3}]$ and transmittance over 80% of ITO thin film prepared at working pressure 1mTorr, input current 0.4A without any substrate heating.

• Transactions of the Korean hydrogen and new energy society
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• v.20 no.2
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• pp.151-160
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• 2009

Natural gas combustion characteristics of mass produced oxygen carrier particles were investigated in a batch type bubbling fluidized bed reactor. Five particles, NiO/bentonite, OCN601-650, OCN702-1100, OCN703-950, OCN703-1100 were used as oxygen carrier particles. Natural gas and air were used as reactants for reduction and oxidation, respectively. During reduction reaction, high fuel conversion and high $CO_2$ selectivity were achieved for most of oxygen carriers. During oxidation, NO emission was very low. These results indicate that inherent $CO_2$ separation and low NOx combustion are feasible for the natural gas fueled chemical-looping combustion system. Among the five oxygen carriers, OCN703-1100 particle was selected as the best candidate for demonstration of long-term operation in large-scale chemical-looping combustor from the viewpoints of fuel conversion, $CO_2$ selectivity, $CH_4$ concentration, and CO concentration.

• International Journal of Naval Architecture and Ocean Engineering
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• v.10 no.5
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• pp.609-616
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• 2018

The cargo handling system, which is composed of a fuel gas supply unit and cargo tank pressure control unit, is the second largest power consumer in a Liquefied Natural Gas (LNG) carrier. Because of recent enhancements in ship efficiency, the surplus boil-off gas that remains after supplying fuel gas for ship propulsion must be reliquefied or burned to regulate the cargo tank pressure. A full or partial liquefaction process can be applied to return the surplus gas to the cargo tank. The purpose of this study is to review the current partial liquefaction process for LNG carriers and develop new processes for reducing power consumption using exergy analysis. The developed partial liquefaction process was also compared with the full liquefaction process applicable to a LNG carrier with a varying boil-off gas composition and varying liquefaction amounts. An exergy analysis showed that the Joule-Thomson valve is the key component needed for improvements to the system, and that the proposed system showed an 8% enhancement relative to the current prevailing system. A comparison of the study results with a partial/full liquefaction process showed that power consumption is strongly affected by the returned liquefied amount.