• Journal of Korean Vacuum Science & Technology
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• v.4 no.3
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• pp.81-85
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• 2000

The effects of $NH_3$ flow rate and reactor pressure on Al composition and the interface of AlGaN/GaN heterostructure were studied. Equilibrium partial pressure of Ga and Al over AiGaN alloy was calculated as a function of growth pressure, $NH_3$flow rate and temperature. It was found equilbrium vapor pressure of Al is significantly lower than that of Ga, thus, the alloy composition mainly controlled by Ga partial pressure. We believe that more decomposition of Ga occur at lower $NH_3$ flow rate and higher growth pressure leads to preferred Al incorporation into AlGaN. The alloy composition gradient became larger at AlGaN/GaN heterointerface at higher reactor pressures, higher Al composition and low $NH_3$ flow rate. This composition gradient lowered sheet carrier concentration and electron mobility as well. We obtained an AlGaN/GaN heterostructure with sheet carrier density of ${\sim}2{\times}10^{13}cm^{-2}$ and mobility of 1250 and 5000 $cm^2$/Vs at 300 K and 100 K, respectively.

• Proceedings of the Materials Research Society of Korea Conference
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• 2011.10a
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• pp.14-14
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• 2011

AlInN has been studied extensively over the past few years due to its interesting material properties that are not present in other ternary nitrides. However, basic material study of AlInN has not been reported as much compared to device applications due to the difficulty in the growth. We have performed the material studies from various aspects. A secondary ion mass spectrometry (SIMS) has shown high oxygen content above $1{\times}10^{18}\;cm^{-3}$ with its insensitivity to the growth conditions. While the free carrier concentration observed by the capacitance-voltage (C-V) measurements was about $3{\times}10^{17}\;cm^{-3}$, the activation energy measured by temperature dependent C-V was only about 4 meV. Si doped AlInN (Si level ${\sim}2{\times}10^{18}\;cm^{-3}$) showed almost no carrier freeze-out at carrier density of $1{\times}10^{18}\;cm^{-3}$. More studies were carried out with a transmission electron microscopy, time-resolved photoluminescence and other analytical techniques to understand the results from SIMS and C-V studies. In this report, we will discuss the possible correlations between the abnormal characteristics in AlInN.

• The Journal of Korean Institute of Communications and Information Sciences
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• v.29 no.11C
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• pp.1581-1591
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• 2004

In this paper, we investigate the design of three low-complexity joint estimation algorithms(LJEAs) for frequency offset and carrier phase. The proposed LJEAs are based on the interpolation technique of correlation values of the received signal in frequency and phase domains. With these algorithms, the estimation ranges $\Delta$f$_{d}$${\times}$T$_{s}$ . are less than 1/2N$_{s}$ , and 1/N$_{s}$ which are comparable to conventional algorithms. The Proposed LJEAs require only 2N$_{s}$ or 4N$_{s}$ complex multiplications which are very simple compared with the conventional algorithms. Nevertheless the estimation accuracies of the LJEAs are as good as those of the conventional algorithms. Suitable areas of application include joint estimation of frequency offset and carrier phase in burst-mode digital transmission such as satellite communications.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.05b
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• pp.17-21
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• 2001

We proposed that concentrations of cartier electron as well as ionized donor defects in nonstoichiometric ZnO are proportional to $P^{-1/2}_{O_2}$, whenever they ionizes singly or doubly, by employing the Fermi-Dirac (FD) statistics for ionization of the native thermal defects $Zn_i$ and $V_o$. The effect of acceptor defect, zinc vacancy $V_{Zn}$made by the Frenkel and Schottky disorder reactions, on carrier concentrations was discussed. By application of the FD statistics law to their ionization while the formation of defects is assumed governed by the mass-action law, the calculation results indicate; 1. ZnO shows n-type conductivity with $N_D>$N_A$ and majority concentration of $n{\propto}\;P^{-1/2}_{O_2}$ in a range of $P_{O_2}$, lower than a critical value. 2. As the concentration of acceptor $V_{Zn}$ increases proportional to $P^{1/2}_{O_{2}}$, ZnO made at extremely high $P_{O_{2}}$, can have p-type conductivity with majority concentration of p ${\propto}\;P^{-1/2}_{O_{2}}$. One may not, however, obtain p-type ZnO if the pressure for $N_{D}<$N_{A}$ is too high.

• Transactions on Electrical and Electronic Materials
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• v.12 no.4
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• pp.169-173
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• 2011

In this study, Al-N codoped p-type zinc oxide (ZnO) thin films were deposited on Si and homo-buffer layer templates in a mixture of $N_2$ and $O_2$ gas with ceramic ZnO:(2 wt% $Al_2O_3$) as a sputtering target using DC- magnetron sputtering. X-ray diffraction spectra of two-theta diffraction showed that all films have a predominant (002) peak of ZnO Wurtzite structure. As the $N_2$ fraction in the mixed $N_2$ and $O_2$ gases increased, field emission secondary electron microscopy revealed that the surface appearance of codoped films on Si varied from smooth to textured structure. The p-type ZnO thin films showed carrier concentration in the range of $1.5{\times}10^{15}-2.93{\times}10^{17}\;cm^{-3}$, resistivity in the range of 131.2-2.864 ${\Omega}cm$, and mobility in the range of $3.99-31.6\;cm^2V^{-1}s^{-1}$ respectively.

• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.328.1-328.1
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• 2014

MOSFET degradation의 대부분은 hot-carrier injection에 의한 interface state (Dit)의 생성에서 비롯되며 따라서 본 연구에서는 신뢰성에 대한 한 가지 방법으로 Charge pumping method를 이용하여 MOSFET의 interface trap(Dit)의 변화를 측정하였다. 소스와 드레인을 ground로 묶고 게이트에 펄스를 인가한 후 Icp를 측정하여 Dit를 추출하였다. 온도를 293~343 K까지 5 K씩 가변했을 때 293K의 Icp(${\mu}A$)는 0.12 nA 313 K는 0.112 nA 343 K는 0.926 nA이며 Dit (cm-1/eV-1)는 $1.61{\times}10^{12}$ (Cm-2/eV-1) $1.49{\times}10^{12}$ (Cm-2/eV-1) $1.23{\times}10^{12}$ (Cm-2/eV-1)이다. 측정결과 Dit는 Icp가 높은 지점에서 추출되며 온도가 높아지게 되면 Icp전류가 낮아지고 Dit가 줄어드는 것을 볼 수 있다. 온도가 올라가게 되면 carrier들이 trap 준위에서 conduction band 위쪽에 이동하게 되어서 interface에 trap되는 양이 작아지게 된다. 그래서 이때 Icp를 이용해 추출한 Dit 는 실제로 trap의 양이 줄어든 것이 아니라 Thermal excess 현상으로 인해 측정되는 Icp의 양이 줄어든 것으로 분석할 수 있다.

• Applied Chemistry for Engineering
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• v.16 no.2
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• pp.200-205
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• 2005

We have prepared the porous carrier that has high capacity for immobilization of microorganisms and adsorption capacity for cation using fly ash in the previous work. In this study, we investigated the characteristics of piggery wastewater treatment in comparison with commercial carrier and conventional activated sludge process by continuous-flow fixed biofilm process in laboratory scale at the same experimental conditions to develop the biofilm process using porous fly ash carrier for wastewater treatment. As a result, the prepared fly ash carrier showed that removal efficiency of COD, TN and $NH_4{^+}-N$ items were 80%, 77% and 65%, respectively, which were higher efficiency than the commercial carrier and conventional activated sludge process. And the result of measurement for immobilized microorganisms after treatment showed higher capacity than the commercial carrier, and it was confirmed by SEM observation on fly ash carrier that the colony of microorganisms was stably formed.

• Proceedings of the KIEE Conference
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• 1998.11c
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• pp.735-736
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• 1998

Reduction of hot carrier degradation in MOS devices has been one of the most serious concerns for MOS-ULSIs. In this paper, three types of LDD structure for suppression of hot carrier degradation, such as spacer-induced degradation and decrease of performance due to increase of series resistance will be investigated. LDD-nMOSFETs used in this study had three different drain structure. (1) conventional ${\underline{S}}urface$ type ${\underline{L}}DD$(SL), (2) ${\underline{B}}uried$ type ${\underline{L}}DD$(BL), (3) ${\underline{S}}urface$urface ${\underline{I}}mplantation$ type LDD(SI). As a result, the surface implantation type LDD structure showed that improved hot carrier lifetime to comparison with conventional surface and buried type LDD structure.

• Korean Journal of Materials Research
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• v.9 no.6
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• pp.564-568
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• 1999

The 8-hydroxyquinoline Zinc(Znq2) were prepared successfully from zinc chloride and zinc acetate as two kinds of starting material. The organic electroluminescent devices(ELDs) were fabricated by the structure of ITO/TPD/Znq2/Al with N-N'-diphenyl-N-N'-bis(3-methylphenyl)-1,1'-biphenyl-4,4'-diamine(TPD) which acts hole trasporting layer and bis(8-oxyquinolino) zinc(II)(Znq2) which acts as emission and electron transporting layer. EL efficiency of Znq2 prepared by heating was investigated. The 570nm of main emission peak which is yellowich green was investigated by photo luminesence(PL) and this results shows that electro luminescence(EL) is from Znq2. The V-J curve shows that carrier injection were investigated from 4V. Maximum luminance and luminance efficiency were 1600cd/$\m^2$, 0.9lm/W. From this results, the Znq2 can be one of the useful organic EL material.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.07a
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• pp.292-295
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• 2002

In this work, transient characteristics of NPT(Non Punch Through)-IGBT(Insulated Gate Bipolar Transistor) have been studied with different temperatures analytically. Power losses are caused by heat generated in MIT-IGBT for steady state and transient state conditions. We therefore have focused on the analysis of excess carrier concentration and excess charge injected into N-drift layer with different temperatures and have obtained anode voltage drop during turn-off with lifetime of 2.4[${\mu}$s].