• 대한전기학회:학술대회논문집
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• 대한전기학회 1998년도 추계학술대회 논문집 학회본부 C
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• pp.856-857
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• 1998

Hydrogenated amorphous carbon nitride [a-C:H(N)] films were deposited on pretreated silicon(100) substrate in activated gas phase using. RF plasma-assisted CVD. We measured the FT-IR spectrum to investigate $C{\equiv}N$ stretching mode(nitrile), C-H stretching mode, C-H bending mode, C=C stretching mode C=N(imino) mode, and the EDX to investigate the ratio of N to C(0.25). By the results of FT-IR and EDX spectrum, We confirmed that hydrogenated amorphous carbon nitride films successfully were synthesized by RF-PACVD

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 1999년도 추계학술대회 논문집
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• pp.406-408
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• 1999

Amorphous carbon nitride thin films were prepared on pretreated silicon(100) substrate in sputtering graphite target by activated gas phase using RF reactively sputtering. We measured the FT-IR spectrum to identify C=N(nitrile)stretching mode(2200cm$\^$-1/), C-H stretching mode(2800cm$\^$-1/), C-H bending mode, C=C stretching mode C=N(imino) mode(1680cm$\^$-1/ ), and the XPS to investigate chemical structure of surface. By the results of FT-H and XPS spectrum, We confirmed that amorphous carbon nitride films with typel (C(1s): 285.9[eV], N(1s): 398.5[ev]) and type 2(C1s): 287.5[eV, N(1s): 400.2[eV]) successfully were synthesized by RF reactively sputtering

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2004년도 Asia Display / IMID 04
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• pp.1121-1124
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• 2004

Carbon Nitride exhibits high electrical resistivity and thermal conductivity that are similar to the properties shown by diamond-like carbon (DLC) films. These diamond-like transport properties in Carbon Nitride come in a material consisting of $sp^2$-bonded carbon versus the $sp^3$-carbon of DLC. The diamond-like properties and nondiamond-like bonding make NDLC an attractive candidate for applications. Liquid crystal (LC) alignment capabilities with ion beam exposure on carbon nitride thin films and Electro-Optical (EO) performances of the ion-beam aligned twisted nematic liquid crystal display (TN-LCD) with oblique ion beam exposure on the Carbon Nitride thin film surface were studied. An excellent uniform alignment of the nematic liquid crystal (NLC) alignment with the ion beam exposure on the Carbon Nitride thin films was observed. In addition, the good EO properties of the ion-beam-aligned TN-LCD were achieved. Finally, we achieved the residual DC property of the ion-beam- aligned TN-LCD on the Carbon Nitride thin film.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2003년도 추계학술대회 논문집 Vol.16
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• pp.88-91
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• 2003

Crystalline carbon nitride films have been attempted for an application of humidity sensors. The films were deposited on $Al_2O_3$ substrate having interdigitated electrodes by reactive RF magnetron sputtering system. The film revealed a good humidity-resistance characteristics as well as humidity-capacitance ones in the humidity range of $10\;{\sim}\;95\;RH(%)$. Temperature dependence was also investigated. These results suggest that carbon nitride film have a possibility for a new humidity-sensitive materials.

• 한국전기전자재료학회논문지
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• 제14권10호
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• pp.835-844
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• 2001

In this paper, we report the successful growth of crystalline carbon nitride films in Si(100) by a laser-electric discharge method. The laser ablation of the target leads to vapor plume plasma expending into the ambient nitrogen arc discharge area. X-ray photoelectron spectroscopy (XPS) and Auger electron spectroscopy(AES) were used to identify the binding structure and the content of the nitrogen species in the deposited films. The surface morphology of the films with a deposition time of 2 hours is studied using a scanning electron microscopy (SEM). In order to determine the structural crystalline parameters, X-ray diffraction (XRD) was used to analysis the grown films.

• 한국재료학회:학술대회논문집
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• 한국재료학회 1996년도 재료학회 춘계학술발표회
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• pp.49-49
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• 1996

• 한국재료학회지
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• 제13권3호
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• pp.150-154
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• 2003

Amorphous carbon nitride films were deposited on Si(001) substrates by a plasma enhanced chemical vapor deposition technique (PECVD) using $CH_4$and $N_2$as reaction gases. The growth and film properties were investigated while the gas ratio and the working pressure were changed systematically. At 1 Torr working pressure, an increase in the $N_2$partial pressure results in a significant increase of the deposition rate as well as an apparent presence of C ≡N bonding, while little affecting the microstructure and amorphus nature of the films. In the case of changing the working pressure at a fixed $N_2$partial pressure of 98%, a film grown at a medium pressure of $1${\times}$10^{-2}$ Torr shows the most prominent C=N bonding nature and photoluminescent property.

• 센서학회지
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• 제9권3호
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• pp.248-255
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• 2000

타겟을 상하 2개 설치한 페닝소스 스퍼터링 장치를 구현하였다. 이 시스템을 이용하여 결정성 질화탄소막을 성장하고 그 물리적 특성을 조사하였다. RBS 측정을 통해 스퍼터링가스 중 Ar의 비율을 감소시키고 질소의 비율을 증가시키면 철의 스퍼터링이 감소되는 것을 알 수 있었다. 성장된 질화탄소막의 결정립 크기는 약 $150{\AA}$에서 $250{\AA}$의 분포를 이루고 있었다. 스퍼터링가스 중 질소의 분압이 증가할수록 증착율 및 성장된 질화탄소막 중 질소량은 증가하였다.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2003년도 하계학술대회 논문집 Vol.4 No.1
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• pp.164-167
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• 2003

Carbon nitride films with ${\beta}-C_3N_4$ crystals were grown by rf reactive magnetron sputtering system with negative DC bias. Chamber baking system to supply whole chamber with activation energy was used to reduce the contamination of H and O atoms. XRD peaks showed the existence of crystalline ${\beta}-C_3N_4$(200) and lonsdaleite structures. FTIR spectroscopy studies revealed that the film contain ${\alpha}-C_3N_4$ and ${\beta}-C_3N_4$ with $1011\;cm^{-1},\;1257\;cm^{-1}\;and\;1529\;cm^{-1}$ peaks. We could also find the grain growth of hexagonal structure from SEM photograph, which is coincident with the theoretical carbon nitride unit cell. ${\alpha}$-step was used to make the thickness profile of the grown films.

• 전기학회논문지
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• 제59권4호
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• pp.743-748
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• 2010

Boron nitride (BN) and carbon nitride (CN) films, which have relatively low work functions and commonly exhibit negative electron affinity behaviors, were coated on carbon nanotubes (CNTs) by magnetron sputtering. The CNTs were directly grown on metal-tip (tungsten, approximately 500nm in diameter at the summit part) substrates by inductively coupled plasma-chemical vapor deposition (ICP-CVD). The variations in the morphology and microstructure of CNTs due to coating of the BN and CN films were analyzed by field-emission scanning electron microscopy (FE-SEM). The energy dispersive x-ray (EDX) spectroscopy and Raman spectroscopy were used to identify the existence of the coated layers (CN and BN) on CNTs. The electron-emission properties of the BN-coated and CN-coated CNT-emitters were characterized using a high-vacuum field emission measurement system, in terms of their maximum emission currents ($I_{max}$) at 1kV and turn-on voltage ($V_{on}$) for approaching $1{\mu}A$. The results showed that the $I_{max}$ current was significantly increased and the $V_{on}$ voltage were remarkably reduced by the coating of CN or BN films. The measured values of $I_{max}-V_{on}$ were as follows; $176{\mu}A$-500V for the 5nm CN-coated emitter and $289{\mu}A$-540V for the 2nm BN-coated emitter, respectively, while the $I_{max}-V_{on}$ of the as-grown (i.e., uncoated) emitter was $134{\mu}A$-620V. In addition, the CNT emitters coated with thin CN or BN films also showed much better long-term (up to 25h) stability behaviors in electron emission, as compared with the conventional CNT emitter.