• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.25 no.3
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• pp.319-332
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• 2014

Insertion loss is used as the character to express the efficiency of EMI filter. In this paper, we studied the better method that can measure the insertion loss of EMI filter exactly than the original method. For the achievement of this, the method measuring both common mode(CM) and differential mode(DM) insertion loss with arbitrary input/output impedance is accomplished using a 4-ports S-parameters system for consideration of unbalanced factor. Using this method, when input/output used in specific system is known, CM/DM insertion loss of EMI filter inserted in the system can be calculated. Finally, we applied 4-ports modeling method to 'X/Y capacitor part' and suggested the algorithm for selecting suitable the value of Y-capacitor using mixed mode S-parameters and mixed mode chain S-parameters.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.14 no.10
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• pp.1036-1043
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• 2003

In this paper, novel lumped equivalent circuits for a conventional parallel directional coupler are proposed. This novel equivalent circuits only have self inductance and self capacitance, so we can design exact lumped equivalent circuit. The equivalent circuit and design formula for the presented lumped element coupler is derived based on the even- and odd-mode properties of a parallel-coupled line. By using the derived design formula, we have designed the 3 dB and 10 dB lumped element directional couplers at the center frequency of 100 MHz and 2 GHz, respectively a chip type directional coupler has been designed with multilayer configurations by employing commercial EM simulator. Designed chip-type directional couplers have a 3 dB-coupling value at the center frequency of 2 GHz and fabricated lumped directional coupler on fr4 organic substrate has a 3 dB, 10 dB-coupling values at the center frequency of 100 MHz. Excellent agreements between simulation results and measurement results on the designed directional couplers show the validity of this paper. Furthermore, in order to adapt to multi-layer process such as Low Temperature Cofired Ceramic (LTCC), chip-type lumped element couplers have been designed by using this method.

• Journal of the Korean Institute of Telematics and Electronics C
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• v.35C no.6
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• pp.30-38
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• 1998

In this paper, a new CMOS current-mode integrator is proposed that can apply the basic building block of the low-voltage high frequency current-mode active filter. And tuning circuits that control the gain and unity gain frequency of them is designed. The proposed integrator is composed of the CMOS complementary circuit which can extend transconductance of an integrator. Therefore, the unity gain frequency which is determined transconductance and MOSFET gate capacitance can be expanded by the proposed integrator. The unity gain frequency of the proposed integrator is increased about two times larger than that of the conventional continuous-time integrator with NMOS-gm. And also, cut-off frequency and gain of the active filter can be controlled with the designed tuning circuit. From the result, we can reduce errors on fabrication. And then, 3rd-order low-pass active filter is designed as an application circuits. These results are verified by the small signal analysis and the 0.8$\mu\textrm{m}$ parameter HSPICE simulation.

• Korean Journal of Materials Research
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• v.21 no.8
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• pp.468-475
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• 2011

[ $LaMeO_3$ ](Me = Cr, Co) powders were prepared using the polymeric precursor method. The effects of the chelating agent and the polymeric additive on the synthesis of the $LaMeO_3$ perovskite were studied. The samples were synthesized using ethylene glycol (EG) as the solvent, acetyl acetone (AcAc) as the chelating agent, and polyvinylpyrrolidone (PVP) as the polymer additive. The thermal decomposition behavior of the precursor powder was characterized using a thermal analysis (TG-DTA). The crystallization and particle sizes of the $LaMeO_3$ powders were investigated via powder X-ray diffraction (XRD), field emission scanning electron microscopy (FE-SEM), and particle size analyzer, respectively. The as-prepared precursor primarily has $LaMeO_3$ at the optimum condition, i.e. for a molar ratio of both metal-source (a : a) : EG (80a : 80a) : AcAc (8a) inclusive of 1 wt% PVP. When the as-prepared precursor was calcined at $700^{\circ}C$, only a single phase was observed to correspond with the orthorhombic structure of $LaCrO_3$ and the rhombohedral structure of $LaCoO_3$. A solid-electrolyte impedance-metric sensor device composed of $Li_{1.5}Al_{0.5}Ti_{1.5}(PO_4)_3$ as a transducer and $LaMeO_3$ as a receptor has been systematically investigated for the detection of NOx in the range of 20 to 250 ppm at $400^{\circ}C$. The sensor responses were able to divide the component between resistance and capacitance. The impedance-metric sensor for the NO showed higher sensitivity compared with $NO_2$. The responses of the impedance-metric sensor device showed dependence on each value of the NOx concentration.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.07a
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• pp.54-57
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• 2003

[ $HfO_xN_y$ ] films using a hafnium tertiary-butoxide $(Hf[OC(CH_3)_3]_4)$ in plasma and $N_2$ ambient were prepared to improve the thermal stability of hafnium-based gate dielectrics. A 10% nitrogen incorporation into $HfO_2$ films showed a smooth surface morphology and a crystallization temperature as high as $200^{\circ}C$ compared with pure $HfO_2$ films. The $TaN/HfO_xN_y/Si$ capacitors showed a stable capacitance-voltage characteristics even at post-metal annealing temperature of $1000^{\circ}C$ in $N_2$ ambient and a constant value of 1.6 nm EOT (equivalent oxide thickness) irrespective of an increase of PDA and PMA temperature. Leakage current densities of $HfO_xN_y$ capacitors annealed at PDA temperature of 800 and $900^{\circ}C$, respectively were approximately one order of magnitude lower than that of $HfO_2$ capacitors.

• Transactions on Electrical and Electronic Materials
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• v.5 no.5
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• pp.169-172
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• 2004

Deep sub-micron device required to get the superior ultra thin gate oxide characteristics. In this research, I will recommend a novel shallow trench isolation structure(STI) for thin gate oxide and a $N_2$O gate oxide 30 $\AA$ by NO ambient process. The local oxidation of silicon(LOCOS) isolation has been replaced by the shallow trench isolation which has less encroachment into the active device area. Also for $N_2$O gate oxide 30 $\AA$, ultra thin gate oxide 30 $\AA$ was formed by using the $N_2$O gate oxide formation method on STI structure and LOCOS structure. For the metal electrode and junction, TiSi$_2$ process was performed by RTP annealing at 850 $^{\circ}C$ for 29 sec. In the viewpoints of the physical characteristics of MOS capacitor, STI structure was confirmed by SEM. STI structure was expected to minimize the oxide loss at the channel edge. Also, STI structure is considered to decrease the threshold voltage, result in a lower Ti/TiN resistance( Ω /cont.) and higher capacitance-gate voltage(C- V) that made the STI structure more effective. In terms of the TDDB(sec) characteristics, the STI structure showed the stable value of 25 % ～ 90 % more than 55 sec. In brief, analysis of the ultra thin gate oxide 30 $\AA$ proved that STI isolation structure and salicidation process presented in this study. I could achieve improved electrical characteristics and reliability for deep submicron devices with 30 $\AA$ $N_2$O gate oxide.

• Proceedings of the International Microelectronics And Packaging Society Conference
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• 2001.04a
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• pp.35-43
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• 2001

Flip chip assembly on organic substrates using ACAs have received much attentions due to many advantages such as easier processing, good electrical performance, lower cost, and low temperature processing compatible with organic substrates. ACAs are generally composed of epoxy polymer resin and small amount of conductive fillers (less than 10 wt.%). As a result, ACAs have almost the same CTE values as an epoxy material itself which are higher than conventional underfill materials which contains lots of fillers. Therefore, it is necessary to lower the CTE value of ACAs to obtain more reliable flip chip assembly on organic substrates using ACAs. To modify the ACA composite materials with some amount of conductive fillers, non-conductive fillers were incorporated into ACAs. In this paper, we investigated the effect of fillers on the thermo-mechanical properties of modified ACA composite materials and the reliability of flip chip assembly on organic substrates using modified ACA composite materials. Contact resistance changes were measured during reliability tests such as thermal cycling, high humidity and temperature, and high temperature at dry condition. It was observed that reliability results were significantly affected by CTEs of ACA materials especially at the thermal cycling test. Results showed that flip chip assembly using modified ACA composites with lower CTEs and higher modulus by loading non-conducting fillers exhibited better contact resistance behavior than conventional ACAs without non-conducting fillers. Microwave model and high-frequency measurement of the ACF flip-chip interconnection was investigated using a microwave network analysis. ACF flip chip interconnection has only below 0.1nH, and very stable up to 13 GHz. Over the 13 GHz, there was significant loss because of epoxy capacitance of ACF. However, the addition of $SiO_2filler$ to the ACF lowered the dielectric constant of the ACF materials resulting in an increase of resonance frequency up to 15 GHz. Our results indicate that the electrical performance of ACF combined with electroless Wi/Au bump interconnection is comparable to that of solder joint.

• JSTS:Journal of Semiconductor Technology and Science
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• v.14 no.4
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• pp.427-435
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• 2014

Segmented-channel MOSFETs (SegFETs) can achieve both good performance and variation robustness through the use of $HfO_2$ (a high-k material) to create the shallow trench isolation (STI) region and the very shallow trench isolation (VSTI) region in them. SegFETs with both an HTI region and a VSTI region (i.e., the STI region is filled with $HfO_2$, and the VSTI region is filled with $SiO_2$) can meet the device specifications for high-performance (HP) applications, whereas SegFETs with both an STI region and a VHTI region (i.e., the VSTI region is filled with $HfO_2$, and the STI region is filled with $SiO_2$) are best suited to low-standby power applications. AC analysis shows that the total capacitance of the gate ($C_{gg}$) is strongly affected by the materials in the STI and VSTI regions because of the fringing electric-field effect. This implies that the highest $C_{gg}$ value can be obtained in an HTI/VHTI SegFET. Lastly, the three-dimensional TCAD simulation results with three different random variation sources [e.g., line-edge roughness (LER), random dopant fluctuation (RDF), and work-function variation (WFV)] show that there is no significant dependence on the materials used in the STI or VSTI regions, because of the predominance of the WFV.

• Journal of the Korean Electrochemical Society
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• v.3 no.3
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• pp.141-145
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• 2000

Anodically Polymerized conducting Polypyrrole film electrode was employed to Pick up uranyl ion with the type of Gr/ppy, xylenol orange modified electrode. To have Porous and oriented ppy film, NBR was applied as precoating agent. The rate constant of polymerization was $3.22\times10^{-3}s^{-1}$ which was 1.6 times smaller value than bare graphite surface. The deposited amount of uranyl iou on $1.70Ccm^{-2}$ of ppy was $1.55\times10^{-4}g$. The matrix effect in artificial seawater was $6.8\%$. The polymer film electrode has a diffusion controlled process in conduction, but the modified Gr/ppy, $X.O^{4-}UO^+$ type was influenced on the ion doping and electronic conduction of film itself owing to increasing of impedance. The capacitance of electrical double layer was respectively enhanced to 56 and 130 times in Gr/ppy, $X.O.^{4-}$ and Gr/ppy, $X.O^{4-}UO^+$ than Grippy type electrode.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.9 no.5
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• pp.498-503
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• 1999

La-doped $BaTiO_3$ ceramics were prepared from BaTiO(C_2O_4)_2\;{\cdot}\;XH_2O(BTO)$, which was synthesized by homogeneous precipitation using dimethyl oxalate. The electrical properties of La-doped $BaTiO_3$ were investigated with variation of La-contents and particle size. It was found that a large PTCR (positive temperature coefficient of resistivity) effect was appeared in the conditions at the 0.6 mol% of La-content and at small particle size of BTO as 1.0$\mu\textrm{m}$. The plot of temperature vs. 1/$\varepsilon_m$(T) above Curie temperature $(T_c)$ was agreed with Curie-Weiss law. The potential barrier calculated from measured resistance and capacitance of specimen, also gave higher value at small particle size of BTO as 1.0 $\mu\textrm{m}$ and at La-content of 0.6 mol%.