• 공업화학
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• 제9권1호
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• pp.94-100
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• 1998

천연가스의 주성분인 메탄의 마이크로웨이브 플라즈마 촉매반응에 의한 C2+ 탄화수소로의 전환반응을 고찰하였다. 플라즈마 출력의 증가(40~120 watt)와 유량이 감소(40~5mL/min)함에 따라서 메탄의 C2+ 생성물로의 전환율을 29.2%에서 42.2%로 향상되었으며, 촉매를 플라즈마와 함계 사용하여 에틸렌과 아세틸렌의 선택도를 향상시키는 동시에 높은 전환율을 유지할 수 있다. 실험에 사용한 여러 촉매중에는 Fe계의 촉매가 가장 높은 에틸렌의 선택도(30%)를 나타내었다. 실제 천연가스의 전환실험에서는 C2+ 생성물의 수율이 33.3%에서 46%의 범위를 보였다. 순수한 메탄이 원료였을 때 보다 높은 C2+ 수율이 얻어진 것은 천연가스가 메탄 보다 반응성이 높은 성분인 에탄과 프로판등을 함유하고 있기 때문으로 생각된다.

• BMB Reports
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• 제52권5호
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• pp.336-341
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• 2019

The cGAS-STING pathway plays an important role in pathogen-induced activation of the innate immune response. The 29-kDa amino-terminal fibronectin fragment (29-kDa FN-f) found predominantly in the synovial fluid of osteoarthritis (OA) patients increases the expression of catabolic factors via the toll-like receptor-2 (TLR-2) signaling pathway. In this study, we investigated whether 29-kDa FN-f induces inflammatory responses via the cyclic GMP-AMP synthase (cGAS)/stimulator of interferon gene (STING) pathway in human primary chondrocytes. The levels of cGAS and STING were elevated in OA cartilage compared with normal cartilage. Long-term treatment of chondrocytes with 29-kDa FN-f activated the cGAS/STING pathway together with the increased level of gamma-H2AX, a marker of DNA breaks. In addition, the expression of pro-inflammatory cytokines, including granulocyte-macrophage colony-stimulating factor (GM-CSF/CSF-2), granulocyte colony-stimulating factor (G-CSF/CSF-3), and type I interferon ($IFN-{\alpha}$), was increased more than 100-fold in 29-kDa FN-f-treated chondrocytes. However, knockdown of cGAS and STING suppressed 29-kDa FN-f-induced expression of GM-CSF, G-CSF, and $IFN-{\alpha}$ together with the decreased activation of TANK-binding kinase 1 (TBK1), interferon regulatory factor 3 (IRF3), and inhibitor protein ${\kappa}B{\alpha}$ ($I{\kappa}B{\alpha}$). Furthermore, NOD2 or TLR-2 knockdown suppressed the expression of GM-CSF, G-CSF, and $IFN-{\alpha}$ as well as decreased the activation of the cGAS/STING pathway in 29-kDa FN-f-treated chondrocytes. These data demonstrate that the cGAS/STING/TBK1/IRF3 pathway plays a critical role in 29-kDa FN-f-induced expression of pro-inflammatory cytokines.

• 한국산학기술학회논문지
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• 제5권1호
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• pp.83-86
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• 2004

고온용 마이크로 전자소자를 이용한 일산화탄소 가스센서를 개발하였다. 100-300℃의 영역에서 가스 감지 특성을 조사하였다. 센서의 가스 감도는 높고, 감지속도는 빠르고 센서는 재현성을 보여 주었다. Pt-SiC 및 Pt-SnO₂ 다이오드는 표준 반도체 공정을 이용하여 제작하였다. CO 가스 감지 특성은 정상상태 및 과도 상태의 조건아래에서 Ⅰ-Ⅴ 및 △Ⅰ-t법을 이용하여 CO 가스 농도와 온도의 함수로서 분석하였다. Pt-SnO₂촉매 층을 갖는 소자의 가스 감도가 Pt 게이트만으로 이루어진 소자보다 높았다. 실험 결과는 SnO₂층이 Pt막의 촉매 반응을 향상시키는 것을 보여주었다.

• 열처리공학회지
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• 제20권5호
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• pp.237-242
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• 2007

Friction coefficient of SM45C steel was surprisingly reduced with $H_2S$ and $C_3H_8$ gas during plasma sulf-nitriding. During the plasma sulf-nitriding, 100-700 sccm of $H_2S$ gas and 100 sccm of $C_3H_8$ gas were added and working pressure and temperature were 2 torr, $500-550^{\circ}C$, respectively. As $H_2S$ gas amount increased over 500 sccm, flake-like structures were developed on top of the nitriding layer and grain size of the nitriding layer were about 100 nm. The friction coefficient for the sample treated plasma sulf-nitriding under $N_2-H_2S$ gas was 0.4 - 0.5. The structure became more finer and amorphous-like along with $N_2-H_2S-C_3H_8$ gas and the nano-sized surface microstructures resulted in high hardness and significantly low friction coefficient of 0.2.

• 한국초전도ㆍ저온공학회논문지
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• 제11권2호
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• pp.1-6
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• 2009

We report a successful fabrication of $high-J_c\;NdBa_2Cu_3O_{7-{\delta}}$ (NdBCO) films on $SrTiO_3$(STO) (100) substrates by pulsed laser deposition (PLD) in a relatively wide processing window. Under various oxygen pressures controlled by either 1%$O_2$/Ar mixture gas or pure $O_2$ gas, strongly c-axis oriented NdBCO films were grown at the substrate temperature $(T_s)\;of\;800^{\circ}C$ in 800 mTorr with 1%$O_2$/Ar gas and also in 400 and 800 mTorr with pure $O_2$ gas. These samples exhibited $T_c$ values over 90K and $J_c$ values of $2.8-3.5MA/cm^2$ at 77K in self-field (77K, sf). On the other hand, $J_c$ values over $1A/cm^2$ were obtained at the temperature regions of $700-830^{\circ}C$ in 800 mTorr with 1%$O_2$/Ar gas at those of $750-830^{\circ}C$ in 800 mTorr with pure $O_2$ gas. Unlike previous reports, resent results support that the PLD processing window for high-Jc NdBCO films is not narrow.

• 한국약용작물학회지
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• 제9권1호
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• pp.26-32
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• 2001

$10^{\circ}C\;N_2\;gas$ 3시간 처리시 무처리에 비해 총질소, 총아미노산, 비타민 C 함량이 약간 높았고, 탄닌과 엽록소 함량은 낮은 경향이었다. 기능성 성분인 GABA 함량은 무처리 (35mg/100g)에 비해 $51{\sim}205mg/100g$으로 $1.5{\sim}6$배 높았다. 제다 품질은 무처리에 비해 3시간 gas 처리시 차이가 없었다. $20^{\circ}C\;N_2$ gas 3시간 처리가 무처리에 비해 품질관련 성분 중 총질소, 총아미노산(데아닌), 카페인 함량은 많았고, 탄닌과 비타민 C 함량은 약간 낮았다. GABA함량은 무처리 (35mg/100g)에 비해 gas처리가 $85{\sim}225mg/100g$으로 $2.5{\sim}7$배 높았다. 제다 품질은 무처리 80.4점에 비해 gas 처리 $76.3{\sim}78.1$점으로 약간 저하되었다. $30^{\circ}C\;N_2$ 3시간 처리시 무처리와 기호성 관련성분이 거의 차이가 없었고 1, 5시간 처리는 무처리에 비해 품질이 약간 떨어지는 경향이었다. GABA 함량은 무처리 (30mg/100g)에 비해 gas처리가 $115{\sim}217mg/100g$으로 $3{\sim}7$배 증가하였다 제다품질도 무처리 80.4점에 비해 gas 처리가 $74.3{\sim}77.2$점으로 열악하였다. 따라서, $10^{\circ}C$에서는 5시간 gas처리, 20, $30^{\circ}C$에서는 3시간 gas 처리 후 제다를 하는 것이 기호성 및 기능성이 우수한 녹차(GABA차)를 제조할 수 있다고 생각된다.

• 대한화학회지
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• 제61권4호
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• pp.139-142
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• 2017

Ethene ($C_2H_4$), which is produced in plants as they mature, was used to study its photoacoustic properties using photoacoustic spectroscopy. Detection of trace amounts, with $N_2$ gas, of $C_2H_4$ gas was also applied. The gas was tested in various conditions-temperature, concentration of the gas, gas cell length, and power of the laser- to determine their effect on the photoacoustic signal, the ideal conditions to detect trace gas amounts, and concentration of $C_2H_4$ produced by an avocado and a banana. A detection limit of 10 ppm was determined for pure $C_2H_4$. A detection of 5% and 13% (by volume) concentration of $C_2H_4$ was produced for a ripening avocado and banana, respectively, in closed space.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 1998년도 추계학술대회 논문집
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• pp.163-166
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• 1998

The mechanism of methane sensing by Pd-SiC diode was investigated over the temperature range of 400~$600^{\circ}C$. The effects or methane gas reaction on the parameters such as barrier height, initial rate of methane gas reaction are investigated. The methane gas reaction kinetics on the device are also discussed. The physical and chemical mechanism responsible for methane detection are proposed. Analysis of steady-state reaction kinetics using I-V method confirmed that methane gas reaction processes are responsible for the barrier height change in the diode.

• 한국세라믹학회지
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• 제27권5호
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• pp.638-644
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• 1990

The C3H8 gas sensitivities of SnO2, Pd-SnO2, Pt-SnO2 gas sensor are looked over with the impregnation method of PdCl2, H2PtCl6 solution on SnO2. The Cl- ion due to incomplete decomposition of PdCl2 at 80$0^{\circ}C$ for 30 min decrease the C3H8 gas sensitivity of SnO2, and the sensitivity is increased by the impreganation of H2PtCl6 solution on SnO2 because of its lower decomposition temperature compared with PdCl2. The C3H8 gas sensitivities of Pd-SnO2, Pt-SnO2 impregnated slightly after 1st sintering are larger than that of pure SnO2 sensor because very small amount of Cl- ion exist in sample due to smaller amount of impregnaiton.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2007년도 추계학술대회 논문집
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• pp.89-90
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• 2007

This paper presents the mechanical properties of 3C-SiC thin film according to 0, 7, and 10% carrier gas $(H_2)$ concentrations using Nano Indentation. When carrier gas $(H_2)$ concentration was 10%, it has been proved that the mechanical properties, elastic modulus and hardness, of 3C-SiC are the best of them. In the case of 10% carrier gas concentration, Young's modulus and Hardness were obtained as 367 GPa and 36 GPa, respectively. When the surface roughness according to $H_2$ concentrations was investigated by AFM (atomic force microscope), when $H_2$ concentration was 10%, the roughness of 3C-SiC thin was 9.92 nm, which is also the best of them. Therefore, in order to apply poly 3C-SiC thin film to MEMS applications, $H_2$ concentration's rate should increase to obtain better mechanical properties and surface roughness.