• 한국세라믹학회지
• /
• 제23권6호
• /
• pp.45-51
• /
• 1986

$SrTiO_3$ reaction mechanism formed from $TiCl_4$ and $SrCl_2$ solution by direct-wet-process was studied. Through this study it is identified that crystalline $SrTiO_3$ is formed above pH 13.8 amorphous $SrTiO_3$ above pH7 and crystallization temperature of amorphous $SrTiO_3$ is at 37$0^{\circ}C$. the final products are composed of 60% crystalline $SrTiO_3$ and 40% amorphous $SrTiO_3$ The amorphous $SrTiO_3$ is identified with the IR absorption spectrum of Sr-Ti-O by FT-IR spectrometer. Under pH 7 gelationus metatitanate (H2TiO3) is formed from TiCl4 but above pH7 the activity by the formation of metatitnic acid ion $[TiO_3]^{2-}$ is so high that $SrTiO_3$is formed more easily through the reaction with $Sr^{2+}$.

• Korean Chemical Engineering Research
• /
• 제57권6호
• /
• pp.861-867
• /
• 2019

차세대 리튬이차전지용 음극활물질로 각광을 받고있는 $Li_4Ti_5O_{12}$는 높은 수명특성, 낮은 비가역용량 그리고 충방전시 부피팽창이 거의 없는 물질이다. 하지만 낮은 전기전도도로 인하여 높은 전류밀도에서는 용량특성이 현저하게 낮아지는 단점을 가지고 있다. 이 문제점을 해결하기 위해 P123을 첨가한 졸-겔법으로 기공구조의 $Li_4Ti_5O_{12}$를 합성하였다. 제조된 샘플들의 물리적 특성을 분석하기 위해 XRD, SEM, BET를 사용하였고, 전기화학적 특성은 사이클테스트, cyclic voltammetry (CV), electrochemical impedance spectroscopy (EIS)로 분석을 하였다. P123/Ti = 0.01mol의 비율로 만들어진 $Li_4Ti_5O_{12}$에서 가장 균일한 입자사이즈, 높은 비표면적, 그리고 상대적으로 높은 기공의 분포를 보였다. EIS분석 결과 기공구조의 $Li_4Ti_5O_{12}$의 경우 저항을 나타내는 반원의 크기가 현저하게 감소하였으며, 전극 내 저항값이 줄어들었음을 알 수 있었다. 율속 테스트결과 0.2C에서 178 mAh/g, 0.5C에서 170 mAh/g, 5C에서 110 mAh/g 그리고 10C에서 90 mAh/g의 용량을 유지하였고 용량회복율 또한 99%로 매우 우수하였다.

• 한국재료학회:학술대회논문집
• /
• 한국재료학회 1992년도 추계학술발표강연 및 논문개요집
• /
• pp.145-145
• /
• 1992

• 한국전기전자재료학회:학술대회논문집
• /
• 한국전기전자재료학회 2000년도 하계학술대회 논문집
• /
• pp.71-74
• /
• 2000

Pt/Pb$TiO_3$/$SrTiO_3$/p-Si films were prepared by metallo-organic solution deposition(M0SD) method and investigated its structure and ferroelectric properties. Crystallinity of specimen as a funtions of post annealing temperature and the thickness of $SrTiO_3$(STO) buffer layer was studied using XRD and AFM. Based on C-V and P-E curve, $PbTiO_3$(PTO) capacitors showed good ferroelectric hysteresis arising from the polarization switching properties. When the thickness of ST0 buffer layer between PTO and Si substrate was 260 nrn and the post annealing temperature was $650^{\circ}C$, it was showed that production of the pyrochlore phase due to interdiffusion of Si into FTO was prevented. The dielectric constant of FTO thin films calculated from a maximum Cma in the accumulation region was 180 and the dielectric loss was 0.30 at 100 kHz frequency. The memory window in the C-V curve is 1.6V at a gate voltage of 5V.

• 한국전기전자재료학회:학술대회논문집
• /
• 한국전기전자재료학회 2008년도 하계학술대회 논문집 Vol.9
• /
• pp.208-209
• /
• 2008

Ni/Ti/Al multilayer system was tested for low-resistance ohmic contact formation to Al-implanted p-type 4H-SiC. Compared with conventional process using Ni, Ni/Ti/Al contact shows perfect ohmic behavior, and possesses much lower contact resistance of about $2.5\times10^{-4}\Omega{\cdot}cm^2$ after $930^{\circ}C$ RTA, which is about 2 orders of magnitude smaller than that of Ni contact. Contact resistance gradually increased as the RTA temperature was lowered in the range of 840 ~ $930^{\circ}C$, and about $3.4\times10^{-4}\Omega{\cdot}cm^2$ was obtained at the lowest RTA temperature of $840^{\circ}C$. Therefore, it was shown that RTA temperature for ohmic contact formation can be lowered to at least $840^{\circ}C$ without significant compromise of contact resistance.

• 한국세라믹학회지
• /
• 제31권12호
• /
• pp.1577-1587
• /
• 1994

TiO2 thin films with the substitution of oxygen with nitrogen were deposited on silicon substrate by metalorganic chemical vapor deposition (MOCVD) using Ti(OCH(CH3)2)4 (titanium tetraisopropoxide, TTIP) and N2O as source materials. X-ray diffraction (XRD) results indicated that the crystal structure of the deposited thin films was anatase TiO2 with only (101) plane observed at the deposition temperatures of 36$0^{\circ}C$ and 38$0^{\circ}C$, and with (101) and (200) plane at above 40$0^{\circ}C$. Raman spectroscopic results indicated that the crystal structure was anatase TiO2 in accordance with the XRD results without any rutile, fcc TiN, or hcp TiN structure. No fundamental difference was observed with temperature increase, but the peak intensity at 194.5 cm-1 increased with strong intensity at 143.0 cm-1 for all samples. The crystalline size of the films varied from 49.2 nm to 63.9 nm with increasing temperature as determined by slow-scan XRD experiments. The refractive index of the films increased from 2.40 to 2.55 as temperature increased. X-ray photoelectron spectroscopy (XPS) study showed only Ti 2s, Ti 2p, C 1s, O 1s and O 2s peaks at the surface of the film. The composition of the surface was estimated to be TiO1.98 from the quatitative analysis. In the bulk of the film Ti 2s, Ti 2p, O 1s, O 2s, N 1s and N 2s were detected, and Ti-N bonding was observed due to the substitution of oxygen with nitrogen. A satellite structure was observed in the Ti 2p due to the Ti-N bonding, and the composition of titanium nitride was determined to be about TiN1.0 from the position of the binding energy of Ti-N 2p3/2 and the quatitative analysis. The spectrum of Ti 2p energy level could be the sum of a 4, 5, or 6 Gaussian curve reconstruction, and the case of the sum of the 6 Gaussian curve reconstruction was physically most meaningful. From the results of Auger electron spectroscopy (AES), it was known that the composition was not varied significantly throughout the whole thickness of the film, and silicon oxide was not observed at the interface between the film and the substrate. The composition of the film was possible (TiO2)1-x.(TiN)x or TiO2-2xNx and in this experimental condition x was found to be about 0.21-0.16.

• 한국세라믹학회지
• /
• 제31권11호
• /
• pp.1337-1345
• /
• 1994

Glasses in the system of 45CaO-25TiO2-30P2O5 containing 1 mole% of M2O(M=Li, Na, K) were melted and crystallized. And their crystal phases were Ca3(PO4)2, CaTi4(PO4)6, and TiO2. Porous glass-ceramics with skeleton of two crystal phase CaTi4(PO4)6 and TiO2 were prepared by selective leaching of Ca3(PO4)2 with 0.1 N-HCl. Glass transition temperature(Tg) and crystallization temperature(Tc) were decreased by addition of 1 mole% alkali metal oxide. Pore size of porous glass-ceramics was increased with increasing heat treatment temperature and its dependence on heat treatment temperature was decreased with addition of Na2O and K2O. It was found that porous glass-ceramics of parent glass and containing 1mole% M2O(M=Li, Na, K) composition had maximum specific surface area, porosity and maximum of crystallzed phase by heat treatment at 80$0^{\circ}C$, 76$0^{\circ}C$, 78$0^{\circ}C$, 80$0^{\circ}C$ respectively.

• 대한전기학회:학술대회논문집
• /
• 대한전기학회 2001년도 하계학술대회 논문집 C
• /
• pp.1378-1380
• /
• 2001

Ohmic contacts have been fabricated on p-type 4H-SiC using Pt/Ti. Low resistivitf Ohmic contacts of Pt/Ti to p-type 4H-SiC were investigated. Specific contact resistances were measured using the transmission line model method, and the physical properties of the contacts were examined using x-ray diffraction, scanning electron microscopy. Ohmic behavior with linear current-voltage characteristics was observed following anneals at $900^{\circ}C$ for 90sec at a pressure of $3.4{\times}10^{-5}$ Torr. The Pt/Si/Ti films was measured lower value of the specific contact resistance by the annealing process, and the contact resistances were improved more than one order compared to Ti contact the annealed sample. Scanning electron microscopy shows that the Pt layer effectively reduce the oxidation of Ti films. And results are obtained as $4.6{\times}10^{-4}$ ohm/$cm^2$ for a Pt/Ti metal structure after a vacuum annealing at $900^{\circ}C$ for 90sec. Titanium has a relatively high melting point, thus Ti-based metal contacts were attempted in this study.

• 한국세라믹학회지
• /
• 제36권7호
• /
• pp.691-697
• /
• 1999

TiO2 powder was adsorbed on the surface of mica using the heterocoagulation method in water TiO2 powder was prepared from hydrolysis of titanium-iso propoxide in a mixed solvent of anhydrous ethanol and water. When the molar ratio of water to titanium iso-propoxide was 0.25 monodispersed spherical TiO2 particles were obtained. The prepared TiO2 powder showed anatase phase after heat treatment at 50$0^{\circ}C$ for 2 h and then transformed to rutile phase after heat treatment at 100$0^{\circ}C$ for 2h. The iso-electric points of TiO2 and Mica were pH 3.9 and pH 3.25 respectively which were measured by the Z-potential analysis in water base. The maximum Z-potential difference between two powders was observed in the range of pH 3.6~3.7 TiO2 powder was adsorbed on the surface of mica by heterocoagulation method in pH 3.6~3,7 The properties of prepared TiO2 powder was haracterized by TG-DTA, XRD and SEM The morphology and thermal properties of TiO2-adsorbed mica were examined.

• 한국정밀공학회:학술대회논문집
• /
• 한국정밀공학회 2003년도 춘계학술대회 논문집
• /
• pp.396-400
• /
• 2003

A new synthesis process for nano laminating Ti$_3$SiC$_2$ has been developed using TiCx (x=0.67) and Si powder as starting materials by a reaction hot pressing. Bulk Ti$_3$SiC$_2$ was fabricated using a green body consisting of TiCx and Si by a hot pressing under the pressures of 25 MPa at 1420-1550 $^{\circ}C$ for 90 min. The synthesized Ti$_3$SiC$_2$ was consisting of only TiCx and Ti$_3$SiC$_2$. The relative density of sintered bulk Ti$_3$SiC$_2$ was increased as the hot pressing temperature was increased, which was mainly due to the increase in TiCx contents in synthesized Ti$_3$SiC$_2$. The synthesized Ti$_3$SiC$_2$ bulk was consisted of nano sized lamella structure of 20-100 nm in thickness. It was found that TiCx particles in Ti$_3$SiC$_2$ would increase the 3-point bending strength of synthesized Ti$_3$SiC$_2$ bulk. The maximum 3-P. bending strength of synthesized Ti$_3$SiC$_2$ bulk was more than 800 MPa. The Vickers hardness of synthesized Ti$_3$SiC$_2$bulk was as low as 5 Gpa, which was decreased with the indentation load. The quasi-plastic deformation behaviors were observed around indentation mark on Ti$_3$SiC$_2$.