• 한국재료학회지
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• 제25권5호
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• pp.233-237
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• 2015

Silicon oxynitride that can be deposited two times faster than general SiNx:H layer was applied to fabricate the passivation protection layer of atomic layer deposition (ALD) $Al_2O_3$. The protection layer is deposited by plasma-enhanced chemical vapor deposition to protect $Al_2O_3$ passivation layer from a high temperature metallization process for contact firing in screen-printed silicon solar cell. In this study, we studied passivation performance of ALD $Al_2O_3$ film as functions of process temperature and RF plasma effect in plasma-enhanced chemical vapor deposition system. $Al_2O_3$/SiON stacks coated at $400^{\circ}C$ showed higher lifetime values in the as-stacked state. In contrast, a high quality $Al_2O_3$/SiON stack was obtained with a plasma power of 400 W and a capping-deposition temperature of $200^{\circ}C$ after the firing process. The best lifetime was achieved with stack films fired at $850^{\circ}C$. These results demonstrated the potential of the $Al_2O_3/SiON$ passivated layer for crystalline silicon solar cells.

• 한국신재생에너지학회:학술대회논문집
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• 한국신재생에너지학회 2010년도 추계학술대회 초록집
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• pp.39.1-39.1
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• 2010

이종접합태양전지는 단결정 실리콘 기판 표면에 고품질 비정질 실리콘층을 적층함으로써 전기의 근원인 전하의 재결합 손실을 줄여 높은 개방전압을 얻을 수 있다는 특징이 있다. 초박형 태양전지는 기존 태양전지보다 뛰어난 광전변환 특성(Photovoltaic characteristic)을 가지고 두께가 얇아 제품 형상 시 자유도가 높아진다. 본 논문에서는 n-type Bare wafer($160{\sim}180{\mu}m$)를 이용하여 $50{\mu}m$의 웨이퍼를 제작하였다. a-Si:H(p)_a-Si:H(i)_c-Si(n)의 광흡수층 구조를 성막하여 cell을 제작하였다. 그 결과 Voc(Open Circuit Voltage)가 0.666, Jsc(Short-Circuit Current)가 34.77, FF(Fill Factor) 69.413, Efficency 16.07%를 달성했다.

• 대한전자공학회논문지
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• 제17권6호
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• pp.65-71
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• 1980

SRO2-Si 이종접합 태양전지소자틀 진공증착에 의하여 제작하여 SRO2를 Si기판위에 증착후 실기중에서의 열처리(소둔)가 태양전지소자의 특성 특히 단락전류와 개방단자전압에 미치는 영향을 실험적으로 검토하여 이 열처리온도에 최적치가 있음을 알았다. 이 최적온도는 Si기액의 고유저항에 따라 차이가 있으며 고유저항이 비슷한 경우는 N형과 P형 Si 기판에 따르는 큰 차이는 없으나 같은 P형 Si기판인 경우에는 고유저항이 낮은 쪽의 최적온도가 높은 것으로 나타났다.

• 한국태양에너지학회:학술대회논문집
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• 한국태양에너지학회 2011년도 추계학술발표대회 논문집
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• pp.154-157
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• 2011

Hydrogenated silicon nitride deposited by LF-PECVD is commonly used for anti-reflection coating and passivation in silicon solar cell fabrication. The deposition of the optimized silicon nitride on the surface is elemental in crystalline silicon solar cell. In this work, the carrier lifetimes were measured while the thicknesses of $SiN_x$ were changed from 700 ${\AA}$ to 1150 ${\AA}$ with the gas flow of $SiH_4$ as 40 sccm and $NH_3$ as 120 sccm,. The carrier lifetime enhanced as the thickness of $SiN_x$ increased due to improved passivation effect. To study the characteristics of $SiN_x$ with various gas ratios, the gas flow of $NH_3$ was changed from 40 sccm to 200 sccm with intervals of 40 sccm. The thickness of $SiN_x$ was fixed as 1000 ${\AA}$ and the gas flow of $SiH_4$ as 40 sccm. The refractive index of SiNx and the carrier lifetime were measured before and after heat treating at $650^{\circ}C$ to investigate their change by the firing process in solar cell fabrication. The index of refraction of SiNx decreased as the gas ratios increased and the longest carrier lifetime was measured with the gas ratio $NH_3/SiH_4$ of 3.

• 한국신재생에너지학회:학술대회논문집
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• 한국신재생에너지학회 2011년도 춘계학술대회 초록집
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• pp.128.2-128.2
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• 2011

스테인레스 스틸 유연기판 위에 플라즈마 화학기상 증착법 (plasma enhanced chemical vapor deposition)을 이용하여 nip 구조의 미세결정질 실리콘 박막 태양전지 (microcrystalline silicon thin film solar cell)를 제조하고 i ${\mu}c$-Si:H광 흡수층과 p ${\mu}c$-Si:H 사이에 i a-Si:H 버퍼 층을 삽입하여 i/p 계면특성을 개선하고 이에 따른 태양전지 성능특성 변화를 조사하였다. ${\mu}c$-Si:H 박막으로 이루어진 i/p 계면에서의 구조적, 전기적 결함은 태양전지 내에서 생성된 캐리어의 재결합과 shunt resistance 감소를 초래하여 개방전압 (open circuit voltage) 및 곡선 인자 (fill factor)를 감소시키는 것으로 알려졌다. 제조된 미세결정질 실리콘 박막 태양전지는 SUS/Ag/ZnO:Al/n ${\mu}c$-Si:H/i ${\mu}c$-Si:H/p ${\mu}c$-Si:H 구조로 제작되었으며 i/p 계면 사이의 i a-Si;H 버퍼층 두께를 변화시키고 이에 따른 태양전지의 특성을 조사하였다. 태양전지의 구조적, 전기적 특성 변화는 Scanning Electron Microscope (SEM), UV-visible-nIR spectrometry, Photo IV와 Dark IV를 통하여 조사하였다.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2002년도 학술대회 논문집 전문대학교육위원
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• pp.184-186
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• 2002

$ITO_{(n)}/Si_{(p)}$ solar cell was fabricated by vaccum deposition method under the resistance heating with substrate temperature kept about 200[$^{\circ}C$] and than their properties are investigated. The cell charateristics can be improved by annealing but are deteriorated at temperature above 650[$^{\circ}C$] for longer than 15[min].

• 한국진공학회지
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• 제21권1호
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• pp.55-61
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• 2012

본 연구에서는 주기적인 3차원 패턴이 형성된 유리기판을 사용하여 비정질 실리콘 박막 태양전지를 제작하였다. 주기적인 패턴은 일반적인 전도성 투명 산화막(TCO: Trasparent Conductive Oxide) 표면의 불규칙 패턴과 비교하여 더 효율적인 광포획을 가능하게 한다. 태양전지 제작 전 광특성 전산모사를 통하여 주기적인 패턴 유리 기판의 광학적 특성을 알아보았다. 비정질 실리콘 박막 태양전지의 제작은 PECVD를 이용하여 구면 패턴이 형성된 유리기판을 이용하여 제작되었으며, 인공 태양광 조사장치를 이용하여 제작된 태양전지의 성능 평가를 진행하였다. 태양전지 전산모사 결과와 실험 결과들을 비교 분석하여 주기적인 패턴 유리 기판을 이용한 비정질 실리콘 박막 태양전지의 효율향상 가능성을 확인하였다.

• Journal of Electrical Engineering and information Science
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• 제2권5호
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• pp.65-71
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• 1997

We present heterojunction solar cells with a structure of metal/a-Si:H(n-i-p)/poly-Si(n-p)/metal for the terrestrial applications. This cell consists fo two component cells: a top n-i-p junction a-Si:Hi cell with wide-bandgap 1.8eV and a bottom n-p junction poly-Si cell with narrow-bandgap 1.1eV. The efficiency influencing factors of the solar cell were investigated in terms of simulation an experiment. Three main topics of the investigated study were the bottom cell with n-p junction poly-Si, the top a-Si:H cell with n-i-p junction, and the interface layer effects of heterojunction cell. The efficiency of bottom cell was improved with a pretreatment temperature of 900$^{\circ}C$, surface polishing, emitter thickness of 0.43$\mu\textrm{m}$, top Yb metal, and grid finger shading of 7% coverage. The process optimized cell showed a conversion efficiency about 16%. Top cell was grown by suing a photo-CVD system which gave an ion damage free and good p/i-a-Si:H layer interface. The heterojunction interface effect was examined with three different surface states; a chemical passivation, thermal oxide passivation, and Yb metal. the oxide passivated cell exhibited the higher photocurrent generation and better spectral response.

• 한국전기전자재료학회논문지
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• 제26권3호
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• pp.246-251
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• 2013

Screen printing is commonly used to form the front/back electrodes in silicon solar cell. But it has caused high resistance and low aspect ratio, resulting in decreased conversion efficiency in solar cell. Recently the plating method has been combined with screen-printed c-Si solar cell to reduce the resistance and improve the aspect ratio. In this paper, we investigated the effect of light induced silver plating with screen-printed c-Si solar cells and compared their electrical properties. All wafers were textured, doped, and coated with anti-reflection layer. The metallization process was carried out with screen-printing, followed by co-fired. Then we performed light induced Ag plating by changing the plating time in the range of 20 sec~5min with/without external light. For comparison, we measured the light I-V characteristics and electrode width by optical microscope. During plating, silver ions fill the porous structure established in rapid silver particle sintering during co-firing step, which results in resistance decrease and efficiency improvement. The plating rate was increased in presence of light lamp, resulting in widening the electrode with and reducing the short-circuit current by shadowing loss. With the optimized plating condition, the conversion efficiency of solar cells was increased by 0.4% due to decreased series resistance. Finally we obtained the short-circuit current of 8.66 A, open-circuit voltage of 0.632 V, fill factor of 78.2%, and efficiency of 17.8% on a silicon solar cell.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2009년도 하계학술대회 논문집
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• pp.456-456
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• 2009

Boron doping on an n-type Si wafer is requisite process for IBC (Interdigitated Back Contact) solar cells. Fiber laser annealing is one of boron doping methods. For the boron doping, uniformly coated or deposited film is highly required. Plasma enhanced chemical vapor deposition (PECVD) method provides a uniform dopant film or layer which can facilitate doping. Because amorphous silicon layer absorption range for the wavelength of fiber laser does not match well for the direct annealing. In this study, to enhance thermal affection on the existing p-a-Si:H layer, a ${\mu}c$-Si:H intrinsic layer was deposited on the p-a-Si:H layer additionally by PECVD. To improve heat transfer rate to the amorphous silicon layer, and as heating both sides and protecting boron eliminating from the amorphous silicon layer. For p-a-Si:H layer with the ratio of $SiH_4$ : $B_2H_6$ : $H_2$ = 30 : 30 : 120, at $200^{\circ}C$, 50 W, 0.2 Torr for 30 minutes, and for ${\mu}c$-Si:H intrinsic layer, $SiH_4$ : $H_2$ = 10 : 300, at $200^{\circ}C$, 30 W, 0.5 Torr for 60 minutes, 2 cm $\times$ 2 cm size wafers were used. In consequence of comparing the results of lifetime measurement and sheet resistance relation, the laser condition set of 20 ~ 27 % of power, 150 ~ 160 kHz, 20 ~ 50 mm/s of marking speed, and $10\;{\sim}\;50 {\mu}m$ spacing with continuous wave mode of scanner lens showed the correlation between lifetime and sheet resistance as $100\;{\Omega}/sq$ and $11.8\;{\mu}s$ vs. $17\;{\Omega}/sq$ and $8.2\;{\mu}s$. Comparing to the singly deposited p-a-Si:H layer case, the additional ${\mu}c$-Si:H layer for doping resulted in no trade-offs, but showed slight improvement of both lifetime and sheet resistance, however sheet resistance might be confined by the additional intrinsic layer. This might come from the ineffective crystallization of amorphous silicon layer. For the additional layer case, lifetime and sheet resistance were measured as $84.8\;{\Omega}/sq$ and $11.09\;{\mu}s$ vs. $79.8\;{\Omega}/sq$ and $11.93\;{\mu}s$. The co-existence of $n^+$layeronthesamesurfaceandeliminating the laser damage should be taken into account for an IBC solar cell structure. Heavily doped uniform boron layer by fiber laser brings not only basic and essential conditions for the beginning step of IBC solar cell fabrication processes, but also the controllable doping concentration and depth that can be established according to the deposition conditions of layers.