• Progress in Superconductivity
• /
• v.11 no.2
• /
• pp.118-122
• /
• 2010

Electrical transport properties were measured on $SmFeAsO_{0.85}$ single crystals along the c-axis for various temperatures and magnetic fields. For the measurements a mesa structure was fabricated on the surface of the single crystals. Samples showed a metallic temperature dependence of resistance and current-voltage curves without hysteretic multiple branch splitting that is usually observed in tunneling Josephson junctions. In addition, in ab-planar magnetic fields, samples did not show the Fraunhofer-type field modulation of the critical current. All these features indicate that the c-axis transport characteristics of $SmFeAsO_{0.85}$ single crystals are explained by the anisotropic bulk superconductivity rather than Josephson tunneling.

• 한국초전도학회:학술대회논문집
• /
• v.15
• /
• pp.40-40
• /
• 2005

• Ocean and Polar Research
• /
• v.31 no.4
• /
• pp.283-296
• /
• 2009

Oceanographic survey data were analyzed to understand the characteristics of a warm eddy observed in the Ulleung Basin in July 2005. The temperature distribution at 200 db and vertical sections provided evidence of the warm eddy in the Ulleung Basin (UWE05). Based on the 5$^{\circ}C$ isothermal line on 200 db temperature, the major axis was 160 km from southwest to northeast, and the minor axis was 80 km from southeast to northwest. The homogeneous layer in the thermocline of UWE05 had mean values of 10.40$^{\circ}C$ potential temperature, 34.35 psu salinity, and 26.37 kg/m$^3$ potential density (${\sigma}_{\theta}$) and provided evidence that UWE05 also existed during the winter of 2004-2005. A warm streamer initially flowed along the circumference of UWE05 and mixed with the upper central water. Two northward current cores were found on the western side of the measured current section at the central latitude of UWE05. One was the East Korean Warm Current (EKWC) and the other was the main stream of the western part of UWE05. Geostrophic transport of the upper layer (from the surface to the isopycnal surface of 26.9 ${\sigma}_{\theta}$) was approximately 2.5 Sv in the eastern side of UWE05. However, the measured transport was twice as large as the geostrophic transport. Mass conservation of geostrophic transport was well satisfied in the upper layer. The direct current measurements and geostrophic transport analysis showed that the EKWC meandered around UWE05.

• Korean Journal of Materials Research
• /
• v.16 no.8
• /
• pp.479-484
• /
• 2006

Highly c-axis oriented poly-crystalline GaN with a dimension of $1{\sim}3\;{\mu}m$ was deposited on $c-Al_2O_3$ substrate by vapor transport epitaxy (VTE) method at the temperature range of $900{\sim}1150^{\circ}C$. XRD intensities from (00'2) plane of grown GaNs were increased with reaction conditions which indicate the improvement of the crystal quality. In the PL spectra measured at 10 K, the spectrum composed with the neutral-donor bound exciton-related emission at 3.47 eV, crystal defect-related emission band at 3.42 eV and with its phonon replicas. The fact that intensity of $I_2$ were increased and FWHM were decreased with growth conditions means that the quality of GaN crystals were improved. With this simple VTE technology, we confirm that the GaNs were simply deposited on sapphire substrate and crystal quality related to optical properties of GaN grown by VTE were relatively good. PL emission without deep level emission in spite of polycrystalline structure can be applicable to the fabrication of large area and low cost optical devices using poly-GaN grown by VTE.

• Korean Journal of Air-Conditioning and Refrigeration Engineering
• /
• v.14 no.9
• /
• pp.725-733
• /
• 2002

In this study, the heat transport limitations of a two-phase closed thermosyphon were investigated. For the test, a two-phase closed thermosyphon ($L_t/: 600 mm,\;L_e:105mm,\;L_a:75mm,\;L_c:420mm,\;D_o:22.2mm,$ container: copper (inner grooved surface), working fluid: PFC ($C_6F_14$) was fabricated with a reservoir that can change the fill charge ratio. The following was imposed as the factors on the heat transport limitations of a two-phase closed thermosyphon. 1) Fill charge ratio of the working fluid. 2) Tilt angle of the longitudinal axis. From tile experimental data, some results were obtained as follows. When the fill charge ratio was relatively small ($\psi$20%), the heat transport limitation occurred about 100W by dry-out limitation. However over 40%, it shelved nearly constant value (500 W) by flooding limitation. The heat transport limitation according to the tilt angle increased smoothly until the tilt angle was $60^{\circ}$,/TEX>, after then decreased slowly.

• 한국초전도학회:학술대회논문집
• /
• v.11
• /
• pp.20-20
• /
• 2001

• Progress in Superconductivity
• /
• v.3 no.2
• /
• pp.140-145
• /
• 2002

An enhancement of the c-axis differential conductance around the zero-bias voltage near the superconducting transition temperature $T_{c}$ has been observed in $Au/Bi_2$$Sr_2$$CaCu_2$$O_{8+x}$ junctions. We attribute such an enhancement to the Andreev reflection (AR) between the surface Cu-O bilayer with suppressed superconductivity and the next superconducting Cu-O bilayer. The continuous evolution of the differential conductance, from gap like depression to an AR-like peak structure, around the zero-bias voltage points to weakening of the barrier strength of the nonsuperconducting layer between adjacent Cu-O bilayers as temperature approaches $T_{c}$ from below. The peak structure disappeared just below the bulk $T_{c}$ value of underdoped Bi2212 single crystals, whereas it survived up to ~1 K above $T_{c}$ in Junctions prepared on slightly overdosed crystals. According to a recently proposed theoretical consideration, a wider temperature range of the AR a bone $T_{c}$ is expected in the underdoped regime when phase-incoherent preformed pairs emerge in the pseudogap state. Our result is in contradiction to the preformed pair scenario. scenario.o.

• Proceedings of the KIEE Conference
• /
• 1996.07a
• /
• pp.44-46
• /
• 1996

Superconducting cable is using by bundling and twisting with many strands for large current capacity. As a result of the twisting, the magnetic field whose direction is parallel to a sound axis by the transport current of themselves is produced in the cable. Not only the externally exposed longitudinal field but also longitudinal component of self field make a influence on a.c loss and a.c quench current degradation. In this paper, we calculate the saturated region flowing with the critical current density in a strand in case of various twist pitch, transport current and external longitudinal field.

• Korean Journal of Materials Research
• /
• v.26 no.11
• /
• pp.656-661
• /
• 2016

4H- and 6H-SiC grown by physical vapor transport method were investigated by transmission electron microscopy (TEM). From the TEM diffraction patterns observed along the [11-20] zone axis, 4H- and 6H-SiC were identified due to their additional diffraction spots, indicating atomic stacking sequences. However, identification was not possible in the [10-10] zone axis due to the absence of additional diffraction spots. Basal plane dislocations (BPDs) were investigated in the TEM specimen prepared along the [10-10] zone axis using the two-beam technique. BPDs were two Shockley partial dislocations with a stacking fault (SF) between them. Shockley partial BPDs arrayed along the [0001] growth direction were observed in the investigated 4H-SiC. This arrayed configuration of Shockley partial BPDs cannot be recognized from the plan view TEM with the [0001] zone axis. The evaluated distances between the two Shockley partial dislocations for the investigated samples were similar to the equilibrium distance, with values of several hundreds of nanometers or even values as large as over a few micrometers.

• Progress in Superconductivity
• /
• v.9 no.1
• /
• pp.5-10
• /
• 2007

We prepared four different $MgB_2$ films on $Al_2O_3$ by hybrid physical chemical vapor deposition method with thicknesses ranging from $0.65\;{\mu}m$ to $1.2\;{\mu}m$. X-ray diffraction patterns confirm that all the $MgB_2$ films are c-axis oriented perpendicular to $Al_2O_3$ substrates. The superconducting onset temperature of $MgB_2$ films were between 39.39K and 40.72K. The residual resistivity ratio of the $MgB_2$ films was in the range between 3.13 and 37.3. We measured the angle dependence of critical current density ($J_c$) and resistivity, and determined the upper critical field ($H_{c2}$) from the temperature dependence of the resistivity curves. The anisotropy ratios defined as the ratio of the $H_{c2}$ parallel to the ab-plane to that perpendicular to the ab-plane were in the range of 2.13 to 4.5 and were increased as the temperature was decreased. Some samples showed increase of $J_c$ and decrease of resistivity when a magnetic field in applied parallel to the c-axis. We interpret this angle dependence in terms of enhanced flux pinning due to columnar growth of $MgB_2$ along the c-axis.