• 제목/요약/키워드: c-axis single crystals

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$SmFeAsO_{0.85}$ 단결정의 c-축 전도 특성 (c-axis Transport Properties of $SmFeAsO_{0.85}$ Single Crystals)

  • 박재현;도용주;이현숙;조병기;이후종
    • Progress in Superconductivity
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    • 제11권2호
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    • pp.118-122
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    • 2010
  • Electrical transport properties were measured on $SmFeAsO_{0.85}$ single crystals along the c-axis for various temperatures and magnetic fields. For the measurements a mesa structure was fabricated on the surface of the single crystals. Samples showed a metallic temperature dependence of resistance and current-voltage curves without hysteretic multiple branch splitting that is usually observed in tunneling Josephson junctions. In addition, in ab-planar magnetic fields, samples did not show the Fraunhofer-type field modulation of the critical current. All these features indicate that the c-axis transport characteristics of $SmFeAsO_{0.85}$ single crystals are explained by the anisotropic bulk superconductivity rather than Josephson tunneling.

$LiNbO_3$단결정성장 및 특성 연구 (Growth And Characterization of $LiNbO_3$ Single Crystals)

  • 손진영;노광수;이진형
    • 한국결정성장학회지
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    • 제2권1호
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    • pp.43-50
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    • 1992
  • 인상속도를 변수로 Czochralski법을 이용하여 $ LiNbO_3$결정들을 성장시켰다. 성장된 단결정에 균열, 기포, 셀 구조 등의 결함들이 관찰되었다. 균열들은 인상속도와 냉각속도에 매우 민감하였는데 6~7mm/h의 인상속도와 20^{circ}C/h의 냉각속도가 직경 15mm정도의 결정성장에 적당한 조건임을 알 수 있었다. 소자응용에 필요한 유전적 성질 및 광학적 성질 등을 알아보기 위하여 a축, c축방향에 따라 절삭된 시편을 온도를 변화시켜가며 측정하였다.

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$YBa_2Cu_3O_{7-x}$초전도 단결정 성장 (Crystal Growth of Superconducting $YBa_2Cu_3O_{7-x}$ Single Crystals)

  • 정광철;오근호;최종건
    • 한국세라믹학회지
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    • 제27권4호
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    • pp.536-542
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    • 1990
  • Single crystals of YBa2Cu3O7-x have been grown in BaCuO2 flux at temperature of 125$0^{\circ}C$ and examined using XRD, EDAX and light microscopy. The YBCO crystals were grown in a cavity which was formed by the reduction of CuO and became large by the directional solidification in the crucible. The observed crystal growth habit is square planar with the c-axis normal to the plane. The surface morphology of grown crystals were growth ledges and growth sprial paterns on a (001) face.

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텅스텐 브론즈 Sr1-xBaxNb2O6 단결정의 성장 특성 (Growth Properties of Tungsten-Bronze Sr1-xBaxNb2O6 Single Crystals)

  • 주기태;강봉훈
    • 한국재료학회지
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    • 제22권12호
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    • pp.711-716
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    • 2012
  • Tungsten bronze structure $Sr_{1-x}Ba_xNb_2O_6$ (SBN) single crystals were grown primarily using the Czochralski method, in which several difficulties were encountered: striation formation and diameter control. Striation formation occurred mainly because of crystal rotation in an asymmetric thermal field and unsteady melt convection driven by thermal buoyancy forces. To optimize the growth conditions, bulk SBN crystals were grown in a furnace with resistance heating elements. The zone of $O_2$ atmosphere for crystal growth is 9.0 cm and the difference of temperature between the melt and the top is $70^{\circ}C$. According to the growth conditions of the rotation rate, grown SBN became either polycrystalline or composed of single crystals. In the case of as-grown $Sr_{1-x}Ba_xNb_2O_6$ (x = 0.4; 60SBN) single crystals, the color of the crystals was transparent yellowish and the growth axis was the c-axis. The facets of the crystals were of various shapes. The length and diameter of the single crystals was 50~70 mm and 5~10 mm, respectively. Tungsten bronze SBN growth is affected by the temperature profile and the atmosphere of the growing zone. The thermal expansion coefficients on heating and on cooling of the grown SBN single crystals were not matched. These coefficients were thought to influence the phase transition phenomena of SBN.

Andreev reflection in the c-axis transport of $Bi_2$$Sr_2$Ca$Cu_2$$O_{8+x}$ single crystals near $T_c$

  • Chang, Hyun-Sik;Lee, Hu-Jong
    • Progress in Superconductivity
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    • 제3권2호
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    • pp.140-145
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    • 2002
  • An enhancement of the c-axis differential conductance around the zero-bias voltage near the superconducting transition temperature $T_{c}$ has been observed in $Au/Bi_2$$Sr_2$$CaCu_2$$O_{8+x}$ junctions. We attribute such an enhancement to the Andreev reflection (AR) between the surface Cu-O bilayer with suppressed superconductivity and the next superconducting Cu-O bilayer. The continuous evolution of the differential conductance, from gap like depression to an AR-like peak structure, around the zero-bias voltage points to weakening of the barrier strength of the nonsuperconducting layer between adjacent Cu-O bilayers as temperature approaches $T_{c}$ from below. The peak structure disappeared just below the bulk $T_{c}$ value of underdoped Bi2212 single crystals, whereas it survived up to ~1 K above $T_{c}$ in Junctions prepared on slightly overdosed crystals. According to a recently proposed theoretical consideration, a wider temperature range of the AR a bone $T_{c}$ is expected in the underdoped regime when phase-incoherent preformed pairs emerge in the pseudogap state. Our result is in contradiction to the preformed pair scenario. scenario.o.

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$CuInTe_2$ 단결정 성장과 특성연구(I) (Study on $CuInTe_2$ Single Crystals Growth and Characteristics(I))

  • 유상하;홍광준
    • 한국결정학회지
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    • 제7권1호
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    • pp.44-56
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    • 1996
  • CuInTe2 다결정은 수평전기로에서 합성하고, CuInTe2 단결정은 수직 Bridgman 방법으로 성장하여 결정구조를 조사하고, Hall 효과를 30K에서 293K의 온도영역에서 측정하였다. CuInTe2 다결정 및 단결정은 정방정계였다. 다결정의 격자상수는 a=6.168Å, c=12.499Å 그리고 c/a=2.026이었고, 단결정의 격자상수는 a=6.186Å, c=12.453Å, 그리고 c/a=2.013이었다. CuInTe2 단결정의 성장면은 Laue 배면반사 사진으로부터 구하였으며 (112)면이었다. CuInTe2 단결정의 Hall 효과는 van der Pauw 방법으로 측정하였다. 상온에서 측정된 c축에 수직한 시료의 운반자농도 p는 2.14×1023holes/m3, 전기전도도 δ는 739.58Ω-1m-1 그리고 이동도 μ는 2.16×10 m2/V·s 이었다. c축에 평행한 시료의 운반자농도 p는 1.51×1023holes/m3, 전기전도도 σ는 717.55Ω-1m-1 그리고 이동도 μ는 2.97×10-2 m2/V·s이었다. c축에 수직 및 평행한 시료의 Hall계수가 양의 값이어서 CuInTe2 단결정은 p형 반도체임을 알 수 있었다.

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수열법에 의한 산화아연(ZnO) 단결정 성장 (Growth of zincite(ZnO) single crystal by hydrothermal method)

  • 이영국;유영문
    • 한국결정학회지
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    • 제7권2호
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    • pp.183-190
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    • 1996
  • 수열법을 이용하여 은(Ag)이 내장된 고온고압용 autoclave에서 KOH를 광화제로 하여 ZnO 단결정을 성장하고, LiOH 및 NH4OH의 첨가에 따른 결정외형의 변화에 대해 고찰하였다. 성장된 단결정은 연한 녹색을 띠고 있었으며 최대크기는 30×30×20mm3였다. KOH 광화제에 1.0-2.0M의 LiOH를 첨가하면 (0001)면의 flaw의 수가 감소하였다. 또한 NH4OH를 첨가한 결과 Vc/Va(c 축의 방향의 성장속도/a축 방향의 성장속도)가 증가함을 확인하였고, 이 방법을 응용하여 판상형의 종자결정 대신 침상형의 종자결정으로도 등방주상(Equant hexagonal prism)형의 ZnO 단결정을 성장할 수 있었다.

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