• 한국초전도학회:학술대회논문집
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• 한국초전도학회 2000년도 High Temperature Superconductivity Vol.X
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• pp.85-85
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• 2000

The normal state of high-Tc superconducting materials has been believed to contain important clues to finding the correct mechanism of the high-Tc superconductivity. One example is the existence of pseudogap in the normal state even above Tc, as observed in various measurements such as photoemission spectroscopy and tunneling conductance. In this pseudogap regime the existence of preformed pairs only with local phase coherence has been debated. Recently Choi, Bang, and Campbell[1] have proposed the occurrence of the zero-bias conductance enhancement due to Andreev quasiparticle reflection from the preformed pairs even with the local phase coherence. In this study we examine the zero-bias enhancement of the differential conductance near or slightly above Tc, using c-axis tunneling in mesa structure of Bi2Sr20a0u208+d single crystals. In slightly overdoped samples zero-bias conductance enhancement (ZBCE) has been observed over a range of 2 K above Tc. In contrast, in underdoped samples with Tc${\sim}$72K the ZBCE appears over a range of 5-6 K above Tc, a much wider temperature range than in overdoped samples. This result may pose as positive signs of the existence of prefurmed pairs in the normal state of high- Tc superconducting materials.

• 한국자기학회지
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• 제19권4호
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• pp.152-155
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• 2009

Ba-ferrite 단결정을 제조하여 자기적 성질을 $M\"{o}ssbauer$ 분광법으로 연구하였다. 단결정 시료를 c-축 방향으로 얇게 절단하고 그 면에 감마선을 조사한 결과 Fe 이온의 스핀방향이 c-축과 일치하였고 시료 전체에 걸쳐 단일 결정체임을 확인하였다. 특히 감마선이 스핀과 나란한 경우 $M\"{o}ssbauer$ 흡수선 중에서 결정 내에 존재하는 Fe의 5개 자리 중에서 단지 4개 자리에서만 공명흡수선이 존재하였고 2b 자리에서는 전혀 공명흡수가 일어나지 않았다. 2b 자리에서의 공명흡수가 일어나지 않는 이유는 대칭성이 있는 2개의 우물 형 위치에너지의 중심 사이를 Fe 이온이 매우 빠른 속도로 c-축을 따라 진동하는 것으로 설명할 수 있다.

• 한국전기전자재료학회논문지
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• 제14권5호
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• pp.410-416
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• 2001

KLN thin films were fabricated on Pt coated Si(100) wafer using an rf-magnetron sputtering method. The grown KLN thin film consists of 4-fold grains. In this experiment, the structure of 4-fold grained thin film was investigated using XRD and SEM measurements. Pt layer was also deposited using the rf-magnetron sputtering method,. XRD measurement showed that he Pt thin film has Gaussian distribution form with strong (111) direction orientation. The KLN thin film has preferred-orientation of (001) direction, and the peak consists of 2 separate peaks; one with broad FWHM and the other with narrow FWHM. The sharp peak is due to single crystal, and combining with Em results, the 4-fold grain consists of singel crystals with c-axis normal to substrate.

• 한국세라믹학회지
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• 제41권1호
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• pp.92-95
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• 2004

Micro-Pulling Down (${\mu}$-PD) 법을 이용하여 $MnO_2$와 $Tb_4O_7$를 첨가하여 crack. 열 strain 등의 결함이 없는 화학양론조성의 $LiNbO_3$ 단결정을 c-축으로 직경 1.0mm, 길이 25-30mm의 크기로 성장시켰다. Electron Probe Micro Analysis (EPMA)를 이용하여 결정 내에 $MnO_2$와 $Tb_4O_7$이 균일하게 분포되어 있음을 확인하였다. 또한 Fourier Transform-Infrared Spectrophotometer (FT-IR)을 사용하여 OH 흡수밴드를 관찰하였고, 성장된 결정의 $MnO_2$와 $Tb_4O_7$ 첨가에 따른 형광특성의 변화를 측정하였다.

• 한국결정학회지
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• 제4권2호
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• pp.74-85
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• 1993

Lithium niobate(LiNbO3) 단결정은 유전성, 압전성, 초전성, 비선형 광학 및 선형 전기광학 물질로서 다양한 응용 성을 가지고 있으므로 전기와 광학장치로 널리 사용되어지고 있다. 그러나 LiNbo3 단결정이 레이저를 이용한 광학장치로 응용될 때 레이저광의 세기에 따라 상굴절(ne)과 이상굴절(no)이 불규칙하게 변하는 장손상이 발생하여 비선 형 광학소자로의 이용에 한계가 있음이 밝혀졌다. 1980년 Zhong등이 LiNbO3에 MgO를 4.5mol% 첨가한 MgO:LiNbO3단결정을 성장시켜 물성을 조사한 결과 광손 상이 현저하게 감소된다고 발표한 후 이 분야의 연구가 활발히 진행되고 있다. 본 연구에서는 순수한 LiNbO3 단결정의 최적 성장조건인 congrugnt한 LiNbOs(Li/Nb=0.486)에 MgO를 0, 2.5, 5.0, 7.5, 10.0 mol% 첨가시킨 MgO:LiNb03 단결정을 Czochalski법으로 성공적으로 성장시켰다. 결정성장은 성장온도 1250℃ 근방에서 회전속도 15rpm 인상속도 2.85 ∼3.25 mm/hr로 하였으며 냉각율은 30℃/hr이다. 성장시킨 단결정의 X-ray 회절실험과 편광현미경의 conoscope상 관찰로 양질의 MgO:LiNbO3 단결정이 성장되었음을 확인하였다. c축에 수직되게 절단한 c-pltae 시료 중 MgO가 첨가된 MgO:LiNb03 시료에서 나이테 형태의 둥근 원무늬가 나타나고 있다. 이 현상은 결정성장시 공기 중의 산소분압에 의해 MgO:LiNbO3 의 용융상태에서 MgO가 균일하게 분포되지 못하기 때문에 나타난 것으로 해석 된다. MgO 첨가량에 따른 MgO:LiNbo3 단결정의 결정 결함 구조를 조사하기 위하여 밀도측정을 하였다. MgO:LiNbO3 단결정의 밀도는 MgO론 2.5mol% 첨가한 시료에서 감소 하다가 5.0mol% 첨가한 시료에서 다시 증가하였으며 5.0mol%이상에서는 다시 감소하였다. 이 실험결과로 MgO 첨가량에 따른 결정 결함구조를 점 결함 모형 (point defect medel)으로 해석하였다.

• 한국결정성장학회지
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• 제26권2호
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• pp.58-61
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• 2016

Basic 암모노써멀 방법을 사용하여 벌크 GaN 단결정을 성장시켰다. 종자 결정은 Hydride vapor phase epitaxy법으로 성장한 c면의 GaN 템플릿을 사용하고 광화제는 sodium metal, amide, azide를 사용하였다. 결정 성장 온도는 $500{\sim}600^{\circ}C$, 성장 압력은 2~3 kabr에서 실시하였다. c 축의 결정 성장 속도는 운용 압력이 증가함에 따라 선형적으로 증가하였다. Cathodoluminescence로 측정한 평균 전위 밀도는 $1{\times}10^5/cm^2$였다. Double Crystals X-ray Diffraction로 측정한 (002)면의 반치폭은 Ga 면에 대해서는 약 270 arcsec, N 면에 대해서는 약 80 arcsec이었다.

• Progress in Superconductivity
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• 제12권1호
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• pp.51-56
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• 2010

$^{13}C$ NMR (nuclear magnetic resonance) measurements have been performed to investigate the local electronic structure of a superconducting graphite intercalation compound $CaC_6$ ($T_c$ = 11.4 K). A large number of single crystals were stacked and sealed in a quartz tube for naturally abundant $^{13}C$ NMR. The spectrum, Knight shift, linewidth, and spin-lattice relaxation time $T_1$ were measured in the normal state as a function of temperature down to 80 K at 8.0 T perpendicular to the c-axis. The $^{13}C$ NMR spectrum shows a single narrow peak with a very small Knight shift. The Knight shift and the linewidth of the $^{13}C$ NMR are temperature-independent around, respectively, +0.012% and 1.2 kHz. The spin-lattice relaxation rate, $1/T_1$, is proportional to temperature confirming a Korringa behavior as for non-magnetic metals. The Korringa product is measured to be $T_1T\;=\;210\;s{\cdot}K$. From this value, the Korringa ratio is deduced to be $\xi$ = 0.73, close to unity, which suggests that the independent-electron description works well for $CaC_6$, without complications arising from correlation and many-body effects.

• 한국초전도ㆍ저온공학회논문지
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• 제16권4호
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• pp.31-35
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• 2014

The upper critical field ($H_{c2}$) was determined by applying a magnetic field along the ab plane and c axis for two single crystals of $BaFe_{2-x}Ru_xAs_2$ (x=0.48 and 0.75). The anisotropy of the $H_{c2}(0)$, ${\gamma}(0)=H_{c2}{^{ab}}(0)/H_{c2}{^c}(0)$, was ~1.6 for x=0.48 and ~2.3 for x=0.75. The angle-dependent resistance measured below $T_c$ allowed perfect scaling features based on anisotropic Ginzburg-Landau theory, leading to consistent anisotropy values. Because only one fitting parameter ${\gamma}$ is used in the scaling for each temperature, the validity of the ${\gamma}$ value was compared with that determined from ${\gamma}=H_{c2}{^{ab}}/H_{c2}{^c}$. The ${\gamma}$ obtained at a temperature close to $T_c$ was 3.0 and decreased to 2.0 at low temperatures. Comparing to the anisotropy determined for electron- or hole-doped $BaFe_2As_2$ using the same method, the present results point to consistent anisotropy in Ru-doped $BaFe_2As_2$ with other electron- or hole-doped $BaFe_2As_2$.

• 소성∙가공
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• 제29권1호
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• pp.44-48
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• 2020

Aluminum nitride (AlN), as a substrate material in electronic packaging, has attracted considerable attention over the last few decades because of its excellent properties, which include high thermal conductivity, a coefficient of thermal expansion that matches well with that of silicon, and a moderately low dielectric constant. AlN films with c-axis orientation and thermal conductivity characteristics were deposited by using Pulsed Laser Deposition (PLD). The epitaxial AlN films were grown on sapphire (c-Al₂O₃) single crystals by PLD with AlN target and Y₂O₃ doped AlN target. A comparison of different targets associated with AlN films deposited by PLD was presented with particular emphasis on thermal conductivity properties. The quality of AlN films was found to strongly depend on the growth temperature that was exerted during deposition. AlN thin films deposited using Y₂O₃-AlN targets doped with sintering additives showed relatively higher thermal conductivity than while using pure AlN targets. AlN thin films deposited at 600℃ were confirmed to have highly c-axis orientation and thermal conductivity of 39.413 W/mK.

• Journal of Magnetics
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• 제16권2호
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• pp.108-113
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• 2011

The electron spin resonance lineshape (ESRLS) function for the electron spin resonance linewidth (ESRLW) of $Cr^{3+}$ (S = 3/2) in ferroelectric lithium niobate single crystals doped with 0.05 wt% of Cr, is obtained by using the projection operator technique (POT), developed by Argyres and Sigel. The ESRLS function is calculated to be axially symmetric about the c - axis and analyzed by using the spin Hamiltonian $H_{SP}={\mu}_B(B{\cdot}{^\leftrightarrow_{g}}{\cdot}S)+S{\cdot}{^\leftrightarrow_{D}}{\cdot}S$ with the parameters g = 1.972 and D = $0.395\;cm^{-1}$. In the ca plane, the linewidths show a strong angular dependence, whereas in the ab plane, they are independent of the angle. This result implies that the resonance center has an axial symmetry along the c - axis. Further, from the temperature dependence of the linewidths that is shown, it can be seen that the linewidths increase as the temperature increases, at a frequency of v = 9.27GHz. This result implies that the scattering effect increases with increasing temperature. Thus, the POT is considered to be more convenient to explain the scattering mechanism as in the case of other optical resonant systems.