• 한국초전도학회:학술대회논문집
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• v.10
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• pp.85-85
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• 2000

The normal state of high-Tc superconducting materials has been believed to contain important clues to finding the correct mechanism of the high-Tc superconductivity. One example is the existence of pseudogap in the normal state even above Tc, as observed in various measurements such as photoemission spectroscopy and tunneling conductance. In this pseudogap regime the existence of preformed pairs only with local phase coherence has been debated. Recently Choi, Bang, and Campbell[1] have proposed the occurrence of the zero-bias conductance enhancement due to Andreev quasiparticle reflection from the preformed pairs even with the local phase coherence. In this study we examine the zero-bias enhancement of the differential conductance near or slightly above Tc, using c-axis tunneling in mesa structure of Bi2Sr20a0u208+d single crystals. In slightly overdoped samples zero-bias conductance enhancement (ZBCE) has been observed over a range of 2 K above Tc. In contrast, in underdoped samples with Tc${\sim}$72K the ZBCE appears over a range of 5-6 K above Tc, a much wider temperature range than in overdoped samples. This result may pose as positive signs of the existence of prefurmed pairs in the normal state of high- Tc superconducting materials.

• Journal of the Korean Magnetics Society
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• v.19 no.4
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• pp.152-155
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• 2009

Ba-Ferrite single crystals were prepared and the magnetic and thermal properties were characterized by Mossbauer spectroscopy. The single crystal layer was cut in the c-axis and radiated to the surface by ${\gamma}$-rays for Mossbauer spectroscopy. We found out that the spin states in Fe ions were parallel to the ${\gamma}$-rays direction and the whole crystal bulk formed only one crystal with the same spin direction. $M\"{o}ssbauer$ spectra in single crystal have only 4 sets of 4 absorption lines in each Fe site when the ${\gamma}$-rays have the same radiation direction with the c-axis in the crystal, and there was no 2b-site spectrum. The zero absorption of 2b-site means that there was a fast diffusion motion in a double-well atomic potential at room temperature, in which bipyramidal Fe ions have the two minima at each side mirror plane.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.14 no.5
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• pp.410-416
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• 2001

KLN thin films were fabricated on Pt coated Si(100) wafer using an rf-magnetron sputtering method. The grown KLN thin film consists of 4-fold grains. In this experiment, the structure of 4-fold grained thin film was investigated using XRD and SEM measurements. Pt layer was also deposited using the rf-magnetron sputtering method,. XRD measurement showed that he Pt thin film has Gaussian distribution form with strong (111) direction orientation. The KLN thin film has preferred-orientation of (001) direction, and the peak consists of 2 separate peaks; one with broad FWHM and the other with narrow FWHM. The sharp peak is due to single crystal, and combining with Em results, the 4-fold grain consists of singel crystals with c-axis normal to substrate.

• Journal of the Korean Ceramic Society
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• v.41 no.1
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• pp.92-95
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• 2004

Using the Micro-Pulling Down (${\mu}$-PD), $MnO_2$ and $Tb_4O_7$ co-doped crack-free stoichiometric $LiNbO_3$ single crystals were grown in 1.0 mm diameter and 25-30 mm length for c-axis. The homogeneous distributions of $MnO_2$ and $Tb_4O_7$ concentration were confirmed by the Electron Probe Microanalysis (EPMA). Also, the infrared OH absorption band of the single crystals observed by using a Fourier Transform-Infrared Spectrophotometer (FT-IR) at room temperature and the photoluminescence spectra was measured with respect to the $MnO_2$ and $Tb_4O_7$ doping.

• Korean Journal of Crystallography
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• v.4 no.2
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• pp.74-85
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• 1993

Single crystals of LiNbO3 have found extensive application in electro-optic and nonlinear optic devices. However, laser-induced refartive index inhomogeneities, which have been labeled opical damage impose limits on device optical damage in LiNbO3 is imporved if more than 4.5 rml% MgO is added to the melt The laser damage thrueshold increased as much as 100 times better then that of undoped crystals. The MgO doped cystal has thus been urterlsiv81y studied since then. In the study, Mgo:LiNbOs(MLA) single crystals dopsd with 0, 2.5, 5.0, 7.5, 10.0 mol% MgO have been grown by the czocrualski technique. The metls were prepared in the platinum crluible and 15∼20mm diameter crystals were grown with a length of 20∼30mm in a resitance heater. The growth rate was 2.5mm/hr, the rotation speed 15rpn. Before sawing MLN single crystals were annealed for 24 hours under atmosphere at a temperature of 1080℃. After sawing, we have found an annual ring cross section of MNA crystals only in the direction of perpendicilar to the c-axis. Nonuniform dispusion of MgO was pointed out that the cuties of the state of oxide were strongly affected by oxygen partial pressure in.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.26 no.2
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• pp.58-61
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• 2016

Bulk GaN crystals were grown by the basic ammonothermal method. The c-plane GaN templates grown by hydride vapor phase epitaxy were used as seed crystals and sodium metal, amide, and azide were added as a mineralizer. The growth conditions are at temperatures from $500{\sim}600^{\circ}C$ and pressures from 2~3 kbar. The growth rate for the c-axis was increased with increasing the operating pressure. Average dislocation density was measured $1{\times}10^5/cm^2$ by the cathodoluminescence measurement. The full-width at half-maximum of the X-ray diffraction rocking curve for (002) reflection was approximately 270 arcsec for Ga face and 80 arcsec for N face.

• Progress in Superconductivity
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• v.12 no.1
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• pp.51-56
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• 2010

$^{13}C$ NMR (nuclear magnetic resonance) measurements have been performed to investigate the local electronic structure of a superconducting graphite intercalation compound $CaC_6$ ($T_c$ = 11.4 K). A large number of single crystals were stacked and sealed in a quartz tube for naturally abundant $^{13}C$ NMR. The spectrum, Knight shift, linewidth, and spin-lattice relaxation time $T_1$ were measured in the normal state as a function of temperature down to 80 K at 8.0 T perpendicular to the c-axis. The $^{13}C$ NMR spectrum shows a single narrow peak with a very small Knight shift. The Knight shift and the linewidth of the $^{13}C$ NMR are temperature-independent around, respectively, +0.012% and 1.2 kHz. The spin-lattice relaxation rate, $1/T_1$, is proportional to temperature confirming a Korringa behavior as for non-magnetic metals. The Korringa product is measured to be $T_1T\;=\;210\;s{\cdot}K$. From this value, the Korringa ratio is deduced to be $\xi$ = 0.73, close to unity, which suggests that the independent-electron description works well for $CaC_6$, without complications arising from correlation and many-body effects.

• Progress in Superconductivity and Cryogenics
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• v.16 no.4
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• pp.31-35
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• 2014

The upper critical field ($H_{c2}$) was determined by applying a magnetic field along the ab plane and c axis for two single crystals of $BaFe_{2-x}Ru_xAs_2$ (x=0.48 and 0.75). The anisotropy of the $H_{c2}(0)$, ${\gamma}(0)=H_{c2}{^{ab}}(0)/H_{c2}{^c}(0)$, was ~1.6 for x=0.48 and ~2.3 for x=0.75. The angle-dependent resistance measured below $T_c$ allowed perfect scaling features based on anisotropic Ginzburg-Landau theory, leading to consistent anisotropy values. Because only one fitting parameter ${\gamma}$ is used in the scaling for each temperature, the validity of the ${\gamma}$ value was compared with that determined from ${\gamma}=H_{c2}{^{ab}}/H_{c2}{^c}$. The ${\gamma}$ obtained at a temperature close to $T_c$ was 3.0 and decreased to 2.0 at low temperatures. Comparing to the anisotropy determined for electron- or hole-doped $BaFe_2As_2$ using the same method, the present results point to consistent anisotropy in Ru-doped $BaFe_2As_2$ with other electron- or hole-doped $BaFe_2As_2$.

• Transactions of Materials Processing
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• v.29 no.1
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• pp.44-48
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• 2020

Aluminum nitride (AlN), as a substrate material in electronic packaging, has attracted considerable attention over the last few decades because of its excellent properties, which include high thermal conductivity, a coefficient of thermal expansion that matches well with that of silicon, and a moderately low dielectric constant. AlN films with c-axis orientation and thermal conductivity characteristics were deposited by using Pulsed Laser Deposition (PLD). The epitaxial AlN films were grown on sapphire (c-Al₂O₃) single crystals by PLD with AlN target and Y₂O₃ doped AlN target. A comparison of different targets associated with AlN films deposited by PLD was presented with particular emphasis on thermal conductivity properties. The quality of AlN films was found to strongly depend on the growth temperature that was exerted during deposition. AlN thin films deposited using Y₂O₃-AlN targets doped with sintering additives showed relatively higher thermal conductivity than while using pure AlN targets. AlN thin films deposited at 600℃ were confirmed to have highly c-axis orientation and thermal conductivity of 39.413 W/mK.

• Journal of Magnetics
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• v.16 no.2
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• pp.108-113
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• 2011

The electron spin resonance lineshape (ESRLS) function for the electron spin resonance linewidth (ESRLW) of $Cr^{3+}$ (S = 3/2) in ferroelectric lithium niobate single crystals doped with 0.05 wt% of Cr, is obtained by using the projection operator technique (POT), developed by Argyres and Sigel. The ESRLS function is calculated to be axially symmetric about the c - axis and analyzed by using the spin Hamiltonian $H_{SP}={\mu}_B(B{\cdot}{^\leftrightarrow_{g}}{\cdot}S)+S{\cdot}{^\leftrightarrow_{D}}{\cdot}S$ with the parameters g = 1.972 and D = $0.395\;cm^{-1}$. In the ca plane, the linewidths show a strong angular dependence, whereas in the ab plane, they are independent of the angle. This result implies that the resonance center has an axial symmetry along the c - axis. Further, from the temperature dependence of the linewidths that is shown, it can be seen that the linewidths increase as the temperature increases, at a frequency of v = 9.27GHz. This result implies that the scattering effect increases with increasing temperature. Thus, the POT is considered to be more convenient to explain the scattering mechanism as in the case of other optical resonant systems.