• 제목/요약/키워드: c-axis orientation

검색결과 360건 처리시간 0.021초

터빈블레이드의 5축 고속가공에서 최적가공경로의 선정 (Evaluation of Cutter Orientations in 5-Axis High Speed Milling of Turbine Blade)

  • 임태순;이채문;김석원;이득우
    • 한국소성가공학회:학술대회논문집
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    • 한국소성가공학회 2002년도 금형가공 심포지엄
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    • pp.53-60
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    • 2002
  • Recently, the development of aerospace and automobile industries brought new technological challenges, related to the growing complexity of products and new geometry models. High speed machining using 5-Axis milling machine is widely used for 3D sculptured surface parts. 5-axis milling of turbine blade generates the vibration, deflection and twisting caused from thin and cantilever shape. So, the surface roughness and the waviness of workpiece are not good. In this paper, The effects of cutter orientation and lead/tilt angle in 5-Axis high speed ball end-milling of turbine blade were investigated to improve the geometric accuracy and surface integrity. The experiments were performed at lead/tilt angle $15^{\circ}$ of workpiece with four cutter directions such as horizontal outward, horizontal inward, vertical outward, and vertical inward. Workpiece deflection, surface roughness and machined surface were measured with various cutter orientations such as cutting direction, and lead/tilt angle. The results show that when 5-axis machining of turbine blade, the best cutting strategy is horizontal inward direction with tilt angle. The results show that when 5-axis machining of turbine blade, the best cutting strategy is horizontal inward direction with tilt angle.

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C-축 배향된 ZnO 박막을 이용하여 제작한 압전형 마이크로 스피커의 특성 평가 (Characterization of Piezoelectric Microspeaker Fabricated with C-axis Oriented ZnO Thin Film)

  • 이승환;서경원;유금표;권순용
    • 한국전기전자재료학회논문지
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    • 제19권6호
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    • pp.531-537
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    • 2006
  • A micromachined piezoelectric microspeaker was fabricated with a highly c-axis oriented ZnO thin film on a silicon-nitride film having compressive residual stress. When it was measured 3 mm away from the microspeaker in open field, the largest sound pressure level produced by the fabricated microspeaker was about 91 dB at around 2.9 kHz for the applied voltage of $6\;V_{peak-to-peak}$. The key technologies to these successful results were as follows: (1) the usage of a wrinkled diaphragm caused by the high compressive residual stress of silicon-nitride thin film, (2) the usage of the highly c-axis oriented ZnO thin film.

RF 마그네트론 스퍼터링법에 의한 a-축 배향 $YBa_2Cu_3O_{7-\delta}$박막의 제조 (Preparation of a axis oriented $YBa_2Cu_3O_{7-\delta}$ thin films by RF magnetron sputtering)

  • 이재준;김영환;신진;이경희;최상삼;한택상
    • 한국재료학회지
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    • 제4권4호
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    • pp.459-465
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    • 1994
  • a-측으로 배향된 $YBa_2Cu_3O_{7-\delta}$ 고온 초전도 박막을 $LaAIO_{3}$(100)단결정 기판에 이중 타게트 off-axis rf마그네트론 스퍼터링법으로 증착하였다. 박막은 기판온도(Ts)$590^{\circ}C$$680^{\circ}C$사이에서 단일공정으로 증착하는 one-step방법과, $590^{\circ}C$의 저온에서 a-축으로 배향된 YBCO박막(두께-30nm)을 면저 만들어 틀로 작용시킨 후 그 틀위에 나머지 부분을 기판온도를 승온하면서 증착하는 방법인 two-step방법 등 두 가지 방법을 사용하여 증착시켰다. one-step방법에서는 $T_s$가 증가함에 따라 감소하였으며, ($00 \ell$)피크는 증가하였다. Two-step방법으로 증착한 박막은 증착속도가 감소함에 따라 (h00)피크가 우세하게 나타났다. 박막의 미세구조는 a-축, c- 축 배향성이 혼재하여 핀홀과 같은 결함들이 생성되었다. 모든 경우 $T_s$가 감소함에 따라 a-축 배향성은 우세하였으나 전기적 특성은 저하되었고, 긴 전이온도 폭을 가졌다.

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ZnO 박막의 RF 마그네트론 스퍼터 증착 중 미리 가열된 기판의 자연냉각 효과 (The Natural Cooling Effects of Pre-heated Substrate during RF Magnetron Sputter Deposition of ZnO)

  • 박성현;이능헌
    • 전기학회논문지
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    • 제56권5호
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    • pp.905-909
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    • 2007
  • Crystalline and micro-structural characteristics of ZnO thin films which were deposited on p-Si(100) with cooling naturally down of pre-heated substrate during RF magnetron sputter deposition, were investigated by XRD and SEM in this paper. The film which was prepared on the substrate which was pre-heated to $400^{\circ}C$ before deposition and then cooled naturally down during deposition, showed the most outstanding c-axis preferred orientation. The ZnO thin film having the best crystalline result were applied to SMR type FBAR device and resonance properties of the device were investigated by network analyzer. It showed that resonance frequency was 2.05 GHz, return loss was -30.64 dB, quality factor was 3169 and electromechanical coupling factor was 0.4 %. This deposition method would be very useful for application of surface acoustic wave filter or film bulk acoustic wave resonator.

Co-Cr(-Ta)/Si 이층막의 자기적 특성 (Magnetic properties of Co-Cr(-Ta)/Si bilayered thin film)

  • 김용진;박원효;금민종;손인환;최형욱;김경환
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2001년도 하계학술대회 논문집
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    • pp.100-103
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    • 2001
  • In order to investigate the magnetic properties of CoCr-based bilayered thin films on kind of underlayer, we introduced amorphous Si layer to Co-Cr(-Ta) magnetic layer as underlayer. With the thickness of CoCr, CoCrTa single layer, crystalline orientation and perpendicular coercivity was improved. It was revealed that by introducing the Si underlayer, the c-axis orientation of CoCr, CoCrTa magnetic layer was improved largely. However, with increasing Si film thickness, perpendicular coercivity and saturation magnetization of Cocr/si, CoCrTa/Si bilayered thin films was decreased. Grain size of bilayered thin films became larger.

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대향타겟스퍼터링법에 의한 FBAR용 AZO(ZnO:Al) 전극의 제작 (Preparation AZO(ZnO:Al) thin film for FBAR by FTS method)

  • 금민종;신성권;가출현;추순남;김경환
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2003년도 하계학술대회 논문집 Vol.4 No.1
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    • pp.172-175
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    • 2003
  • ZnO:Al thin film for application to FBAR's bottom electrode using ZnO piezoelectric thin film were prepared by FTS, in order to improve the crystallographic properties of ZnO thin films because the ZnO:Al thin film and ZnO thin films structure is equal each other. So we prepared the ZnO:Al thin film with oxygen gas flow rate. Thickness and c-axis preferred orientation and electric properties of ZnO:Al bottom electrode were evaluated by $\alpha$-step, XRD and 4-point probe..

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Mg-Zn-Y(ZW61) 합금에서 Icosahedral 준결정상의 석출 (Precipitation of Icosahedral Qusicrystal Phase in Mg-Zn-Y(ZW61) alloy)

  • 곽호연;이갑호
    • 한국재료학회지
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    • 제21권3호
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    • pp.168-173
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    • 2011
  • Precipitation of the ordered icosahedral quasicrystal in Mg-6wt%Zn-1wt%Y alloy has been characterized by transmission electron microscopy observations. The lamellar-type icosahedral qusicrystal phases (I-phase) with the face-centered icosahedral (FCI) structure are observed in alloy after solution treatment at $550^{\circ}C$. In the alloy annealed at $400^{\circ}C$, polygon-shaped I-phases are observed in the ${\alpha}$-Mg matrix. The interfaces of the I-phase with the matrix are facetted and the facets are on five-fold and two- fold plane of the I-phase. The orientation relationship of the I-phase with the matrix is determined to be $[I5]_I//[001]_{Mg}$, $(2f)_I//(2\overline{1}0)_{Mg}$ and $[I2]_I//[311]_{Mg}$, $(5f)_I//(0\overline{1}1)_{Mg}$. The icosahedral grains are occasionally found to be twinned with one of the five-fold axis as the twin axis. The twin boundaries appear to be fairly straight and perpendicular to the fivefold twin axis. The icosahedral twin can be expressed as a rotation of $63.4^{\circ}$ or $116.62^{\circ}$ around two fold zone axis.

RF마그네트론 스퍼터링법으로 제조한 $YBa_2Cu_3O_{7-x}$전도체 박막의 특성에 대한 기판의 영향 (Substrate effects on the characteristics of $YBa_2Cu_3O_{7-x}$ thin films prepared by RF magnetron sputtering)

  • 신현용;박창엽
    • E2M - 전기 전자와 첨단 소재
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    • 제8권1호
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    • pp.6-12
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    • 1995
  • High Tc superconducting YBa$_{2}$Cu$_{3}$$O_{7-x}$ thin films were prepared on various substrates by off-axis rf magnetron sputtering method to examine the substrate effects on the film structure and its R-T characteristics. The SEM analysis showed that the surface morphology of the grown YBa$_{2}$Cu$_{3}$O.sub 7-x/, film has different characteristic structure with different substrate used. The film on (100) SrTiO$_{3}$ substrate has critical current density of 3*10$^{5}$ A/cm$^{2}$ at 77K under zero magnetic field. The X-ray diffraction measurements revealed that the films on (100) SrTiO$_{3}$ substrate have mixed a-axis and c-axis normal to the substrate surface and the films on (100) MgO and ZrO$_{2}$/sapphire substrates have c-axis normal orientation to the substrate surface. However, YBa$_{2}$Cu$_{3}$$O_{7-x}$ films on (100) sapphire substrates showed no preferential orientation.ion.

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