• 한국표면공학회:학술대회논문집
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• 한국표면공학회 2009년도 추계학술대회 초록집
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• pp.163-164
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• 2009

dc unbalanced magnetron sputtering 방법으로 superhard quarternary Ti-B-C-N films을 합성하였다. XPS, XRD 분석 결과 Ti-B-C-N films은 solid-solution (Ti,C,N)$B_2$와 Ti(C,N) 결정이 amorphous BN에 분포된 나노 복합체를 형성하였다. 여기에서는 film내 N의 양에 따라 강도가 증가하다가 그 후 감소하는 경향을 보였다.

• 한국표면공학회:학술대회논문집
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• 한국표면공학회 2009년도 추계학술대회 초록집
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• pp.152-152
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• 2009

유기태양전지 Solvent인 1-2-Dichlorobenzene(DCB)에 1-Bromonaphtalene(BN)을 첨가하여 Air분위기에서 ZnO film을 이용한 유/무기 복합 태양전지를 만들었다. 셀의 구조는 ITO/ZnO nanofilm/Poly(3-hexylthiophene(P3HT):[6,6]-Phenyl C60-Butyric acid methyl ester(PCBM)/PEDOT:PSS/Ag로 제작했다. 두께 70nm ZnO film은 전기화학적 방법으로 ITO위에 전착하였다. AM1.5조건에서 Solar simulator로 측정한 결과 BN을 첨가한 셀에서 Jsc값이 증가되었다. Jsc값의 증가는 BN이 결정화를 향상시켜 효율이 증가됨을 확인하였다.

• Journal of Electrical Engineering and Technology
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• 제5권4호
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• pp.637-639
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• 2010

Hexagonal boron nitride (BN) films were prepared. The process involved, spraying BN powder-dispersed $H_3BO_4-BCl_3$-ethyl alcohol solution on quartz plates, and the drying off quartz plates before, and annealing at $1070^{\circ}C$ in a nitrogen atmosphere. The optical energy band gap of the BN films was 5.28 eV. Photoluminescence peaks with energies of 3.44, 3.16, 2.97, and 2.35 eV at 10 K were observed and analyzed. Accordingly, these have resulted from donor-acceptor pair recombinations.

• 한국표면공학회지
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• 제32권3호
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• pp.351-355
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• 1999

BN films with a high content of cubic phase has been deposited by a variety of techniques. It is well known that c-BN films grow with a unique microstructure consisting of $sp^2$ and $sp^{3-}$ bonded layers. Because of existence of the initially grown $sp^{2-}$ /bonded layer, BN films are not adhesive to the substrates. In this study, post-N$^{+ }$ / implantation was applied to improve the adhesion of the films. A Monte Carlo program TAMIX was used to simulate this modification process. The simulation showed nitrogen concentration profile at $1200\AA$ in depth in case of 50keV -implantation energy. FTIR spectra of the $N^{+}$ implanted specimens demonstrated a strong change of absorption band at 1380 cm$^{ -1 }$The films were also investigated by HRTEM. From these results, it is concluded that the post ion implantation could be an effective technique which improves the adhesion between BN film and substrate.

• 한국결정성장학회지
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• 제3권1호
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• pp.59-65
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• 1993

저항가열식 고진공증착기를 이용하여 압력센서로 사용될 수 있는 boron이 첨가된 다결정 silicon 박막이 제조되었다. 다결정 silicon 박막은 여러온도에서 quartz 기판위에 증착되었으며, boron은 BN 웨이퍼를 사용하여 확산로에서 doping하였다. $500^{\circ}C$의 기판온도에서 증착된 silicon 박막은 비정질이었으며, $600^{\circ}C$에서 결정을 보이기 시작하였고, $700^{\circ}C$에서 다결정이 되었다. $900^{\circ}C$에서 10분동안 boron을 dopion한 후, 박막의 비저항은 $0.1{\Omega}cm~1.5{\Omega}cm$의 범위에 있었으며, boron 밀도(농도)는 $9.4$\times$10^{15}~2.1$\times${10}^{17}cm^{-3}$이었고, 입자의 크기는 $107{\AA}~191{\AA}$이었다.

• 한국재료학회지
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• 제24권11호
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• pp.632-638
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• 2014

We investigated the effects of DMAB (Borane dimethylamine complex, C2H10BN) in electroless Ni-B film with addition of DMAB as reducing agent for electroless Ni plating. The electroless Ni-B films were formed by electroless plating of near neutral pH (pH 6.5 and pH 7) at $50^{\circ}C$. The electroless plated Ni-B films were coated on screen printed Ag pattern/PET (polyethylene terephthalate). According to the increase of DMAB (from 0 to 1 mole), the deposition rate and the grain size of electroless Ni-B film increased and the boron (B) content also increased. In crystallinity of electroless Ni-B films, an amorphization reaction was enhanced in the formation of Ni-B film with an increasing content of DMAB; the Ni-B film with < 1 B at.% had a weak fcc structure with a nano crystalline size, and the Ni-B films with > 5 B at.% had an amorphous structure. In addition, the Ni-B film was selectively grown on the printed Ag paste layer without damage to the PET surface. From this result, we concluded that formation of electroless Ni-B film is possible by a neutral process (~green process) at a low temperature of $50^{\circ}C$.

• 대한금속재료학회지
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• 제46권6호
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• pp.329-337
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• 2008

During the continuous casting of boron-bearing steel, the corner cracks on the slab are formed by deformation with low strain rate and rapid cooling at the unbending temperature within the range of 800- $1000^{\circ}C$. Especially, the rapid cooling in the corner of slab during the continuous casting leads to as corner cracking. Therefore, in this study, the hot tensile tests applied to the different cooling rates were taken into account in order to study the effect of cooling rate on the hot ductility of boron-bearing steel. The results revealed that increasing cooling rate deteriorate the hot ductility of boron- bearing steel. Rapid decreasing of the hot ductility is caused by formation of a film-like ferrite and precipitate at the austenite grain boundaries. The morphology of the precipitates in the boron-bearing steel was monitored by PTA (Particle Tracking Autoradiography) and TEM, we observed MnS and BN compound and their morphology was quite different depending on the cooling rates. When the cooling rate is increased, rodshape MnS and BN precipitates can be formed along the austenite grain boundaries. It can cause that weakening the boundary region and decreasing the hot ductility of boron-bearing steel.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2009년도 하계학술대회 논문집
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• pp.236-236
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• 2009

This paper describes the fabrication and characteristics of Schottky micro hydrogen sensors for high temperatures by using polycrystalline(poly) 3C - SiC thin film grown on Si substrates with thermal oxide layer using APCVD. Pd/poiy 3C-SiC Schottky diodes were made and evaluated by I-V and C-V measurements. Electric current density and barrier height voltage were $2\times10^{-3}\;A/cm^2$ and 0.58 eV, respectively. These devices could operate stably at about $400^{\circ}C$. According to $H_2$ concentrations, their barrier height($\Phi_{Bn}$) were changed 0.587 eV, 0.579 eV, 0.572 eV and 0.569 eV, respectively. the current was increased. Characteristics of implemented sensors have been investigated in terms of sensitivity, linearity of response, response rate and response time. Therefore, from these results, Pd/poly 3C-SiC Schottky devices have very high potential for high temperature chemical sensor applications.

• 한국전기전자재료학회논문지
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• 제26권2호
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• pp.98-103
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• 2013

The alumina substrates that Ni electrode was printed on and the multi-layered PTCR thermistors of which composition is $(Ba_{0.998}Ce_{0.002})TiO_3+0.001MnCO_3+0.05BN$ were fabricated by a thick film process, and the effect of re-oxidation temperature on their resistivities and resistance jumps were investigated, respectively. Ni electroded alumina substrate and the multi-layered PTC thermistor were sintered at $1150^{\circ}C$ for 2 h under $PO_2=10^{-6}$ Pa and then re-oxidized at $600{\sim}850^{\circ}C$ for 20 min. With increasing the re-oxidation temperature, the room temperature resistivity increased and the resistance jump ($LogR_{290}/R_{25}$) decreased, which seems to be related to the oxidation of Ni electrode. The small sized chip PTC thermistor such as 2012 and 3216 exhibits a nonlinear and rectifying behavior in I-V curve but the large sized chip PTC thermistor such as 4532 and 6532 shows a linear and ohmic behavior. Also, the small sized chip PTC thermistor such as 2012 and 3216 is more dependent on the re-oxidation temperature and easy to be oxidized in comparison with the large sized chip PTC thermistor such as 4532 and 6532. So, the re-oxidation conditions of chip PTC thermistor may be determined by considering the chip size.

• 한국응용과학기술학회지
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• 제8권2호
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• pp.105-114
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• 1991

In relation to the preparation of Langmuir-Blodgett thin film, four kinds of N-alkylpyridiniurn bromide were synthesized. The values of surface tensions of these materials, measured with a Traube stalagmometer, gave the relationship between the critical micells hydrophobic radical and between CMC and temperature. Values of thermodynamic properties(${\Delta}H^0_m,\;{\Delta}S^0_m,\;{\Delta}G^0_m,$) for the formatoin of micelle were also obtained. Experiments gave the following results; at the temperature range between 40 and 60$^{\circ}C, CMC of Hexadecyl-, Octadecyl-, Eicosyl-, and Docosyl-Pyridinium Bromide were $7.64{\times}10^{-4}{\sim}9.13{\times}10^{-4},\;3.85{\times}10^{-4}{\sim}4.60{\times}10^{-4},\;2.00{\times}10^{-4}{\sim}2.39{\times}10^{-4},\;and\;1.07{\times}10^{-4}{\sim}1.28{\times}10^{-4}$ mol/l, respectively. Surface tension, ${\Gamma}_{CMC}$, of those were 33.49${\sim}$36.00, 34.78${\sim}$37.61, 35.49${\sim}$37.61 and 38.76${\sim}$55.80 dyne/cm, respectively, The relationship between CMC and the mumber of carbon atoms in the hydrophobic radical, N was expressed as follows : Log(CMC)=A-BN where A and B are constants. At the temperature range between 40 and 60$^{\circ}C$, the change of Gibbs evergy (${\Delta}G_m$) for one methylene group ($-CH_2-$) were -0.65RT, respectively, The minus values of enthalpy change (${\Delta}H_m$) suggest that the formation of micelle is exothermic. Additionally, the overall increase in the entropy change (${\Delta}S_m$) with respect to the temperature increase suggests that the formation of micelle is attained by a exothermic enthalpy directed process.