• Journal of the Korean Crystal Growth and Crystal Technology
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• v.16 no.2
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• pp.59-65
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• 2006

Al-doped and F-doped ZnO (ZnO : Al & ZnO : F) thin films were coated onto glass substrate by sol-gel method. These films showed c-axis orientation in common, but different I(002)/[I(002) + I(101)] and FWHM (full width at half-maximum). In particular, the grain size of the ZnO : Al films decreased with the increase in the Al-doping concentration, while for the ZnO : F films the grain siae increased up to F 3 at% and then decreased. For the electrical properties, Hall effect measurement was used. The resistivity of the ZnO : Al films and the ZnO : F films were, respectively, $2.9{\times}10^{-2}{\Omega}cm$ at Al 1 at% and $3.3{\times}10^{-1}{\Omega}cm$ at F 3 at%. Moreover compared with ZnO:Al films, ZnO:F films have lower carrier concentration (ZnO : Al $4.8{\times}10^{18}cm^{-3}$, ZnO : F $3.9{\times}10^{16}cm^{-3}$) and higher mobility (ZnO : Al $45cm^2/Vs$, ZnO : F $495cm^2/Vs$). For average optical transmittances, ZnO : Al thin films have $86{\sim}90%$ and ZnO : F films have $77{\sim}85%$ comparatively low.

• Journal of the Korean Magnetics Society
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• v.17 no.1
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• pp.18-21
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• 2007

The hexagonal $HoMn_{1-x}-Fe_xO_3$(x=0.00, 0.05) thin films were prepared using pulsed laser deposition(PLD) method on $Pt/Ti/SiO_2/Si$ substrate. The microstructure and magnetic properties have been studied by x-ray diffraction(XRD), atomic force microscopy (AFH), scanning electron microscope(SEM:), x-ray photoelectron spectroscopy(XPS), and conversion electron $M\"{o}ssbauer$ spectroscopy(CEMS). From the analysis of the x-ray diffraction patterns, the crystal structure for all films was found to be a hexagonal($P6_3cm$), which was preferentially grown along(110) direction. The lattice constant $c_0$ of the film with x=0.05 was close to that of single crystal, whereas lattice constant $a_0$ with respect to single crystal shows a slight decrease. This difference of lattice parameters between film and single crystal was caused by the lattice mismatch between the film and $Pt/Ti/SiO_2/Si$ substrate. Conversion electron $M\"{o}ssbauer$ spectrum of $HoMn_{0.95}Fe_{0.05}O_3$ thin film shows an asymmetry doublet absorption ratio at room temperature, which is due to the oriented direction of crystallographic domains. This is corresponding with analysis of x-ray diffraction. The quadrupole splitting(${\Delta}E_Q$) at room temperature is found to be $1.62{\pm}0.01mm/s$. This large ${\Delta}E_Q$ was caused by asymmetry environment surrounding Fe ion.

• Journal of Sericultural and Entomological Science
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• v.36 no.2
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• pp.138-146
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• 1994

The structural characteristics of Antheraea yamamai and Antheraea pernyi silk were investigated by using x-ray diffraction method, IR spectroscopy and polarizing microscopy. The amino acid composition, fiber density, thermal decomposition temperature and glass transition temperature were also measured for relating these physical properties to the structure in comparison with those of Bombyx mori silk fiber. There was no significant structural difference between A. yamamai and A. pernyi silk fiber on an examination of x-ray diffraction curve and IR spectrum. Both of these wild silk fibers showed double diffraction peaks at the Bragg angle 2Θ16.7˚ and 20.5˚by x-ray diffraction analysis as well as IR absorption peaks for the bending vibration of specific groups related to ala-ala amino acid sequence. On the other hand, the x-ray diffraction curve and IR spectrum of Bombyx mori silk fiber are different from those of wild silk fibers, indicating different crystal structure as well as amino acid sequences. It showed under the polarizing microscope examination that the birefringence and optical orientation factor of wild silk fibers are much lower than those of B. mori silk. Also, the surface of degummed wild silk fibers was characterized by the longitudinal stripes of microfibrils in the direction of fiber axies. The amino acid composition, which is strongly related to the fine structure and properties, was not significantly different between these two wild silk fibers. However, the alanine content was somewhat less and polar amino acid content more for A. yamamai. As a result of fiber density measurement, the specific gravities of B. mori, A. pernyi and A. yamamai were 1.355~1.356, 1.308~1.311, 1.265~1.301g/㎤ in the order, respectively. The calculated crystallinity(%) was 64% for B. mori and 51~52% for wild silk fibers, which showed same trend by IR method in spite of somewhat higher value. The thermal decomposition behaviour was examined by DSC and TGA, showing that the degradation temperature was in the order of B mori, A. prernyi and A. yamamai at around 350$^{\circ}C$. It was also observed by TGA that the decomposition seems to proceed step by step according to their specific regions in the fiber structure, resulting the difference in their thermal stabilities. The glass transition temperature was turned out to be 220$^{\circ}C$ for B. mori, 240$^{\circ}C$ A. yamamai and 255$^{\circ}C$ A. pernyi by the dynamic mechanical analysis. It is expected that the chemical properties are affected by the dynamic mechanical behavior in accordance with their structural characters.

• Journal of the Korean Vacuum Society
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• v.19 no.4
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• pp.293-299
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• 2010

Vertically aligned ZnO nanorods on Si (111) substrate were prepared by hydrothermal method. The ZnO nanorods on spin-coated seed layer were synthesized at $140^{\circ}C$ for 6 hours in autoclave and were thermally annealed in argon atmosphere for 20 minutes at temperature of 300, 500, $700^{\circ}C$. The effects of the thermal annealing on the structural and optical properties of the grown on ZnO nanorods were investigated by X-ray diffraction (XRD), field-emission scanning electron microscopy (FE-SEM), photoluminescence (PL). All the ZnO nanorods show a strong ZnO (002) and weak (004) diffraction peak, indicating c-axis preferred orientation. The residual stress of the ZnO nanorods is changed from compressive to tensile by increasing annealing temperature. The hexagonal shaped ZnO nanorods are observed. The PL spectra of the ZnO nanorods show a sharp near-band-edge emission (NBE) at 3.2 eV, which is generated by the free-exciton recombination and a broad deep-level emission (DLE) at about 2.12~1.96 eV, which is caused by the defects in the ZnO nanorods. The intensity of the NBE peak is decreased and the DLE peak is red-shifted due to oxygen-related defects by thermal annealing.