• Journal of the Korean Ceramic Society
• /
• v.26 no.3
• /
• pp.438-444
• /
• 1989

The role of TiC and the effect of Y2O3 addition on the densification, microstructure and mechanical properties of Al2O3-TiC composite have been studied. The amount of Y2O3 has been varied from 0 to 2 wt.% while keeping the TiC content at 10, 20 or 30 wt.%. The powder compacts have been sintered at 1,75$0^{\circ}C$ for various times in 1 atm Ar atmosphere and hot isostatically pressed (HIPed) at 1,$600^{\circ}C$ for 0.5h under 1,500atm Ar. Considerable increase in sintered density(over 95%) has been achieved by adding 0.5 wt.% Y2O3 in specimens containing high TiC volume. More addition of Y2O3 does not affect the densification. With increasing the sintering time from 0.5 to 4h, slight increase in density results. The growth of Al2O3 grain has been enhanced by Y2O3 addition ; this tendency is reduced with increasing TiC content because of grain boundary dragging effect of TiC particles. The hardness of specimens increases considerably by an addition of 0.5wt.% Y2O3 owing to the density increase. Further addition of Y2O3 has no effect on hardness. Fracture toughness augments with TiC content by crack deflection around the particles. By adding 0.5wt.% Y2O3, all the specimens can be densified to isolated pore stage and thus can be HIPed to full densification and better mechanical property. In particular, the fracture toughness of Al2O3-30 TiC specimen increases about 50% by HIPing. Fully dense Al2O3-30 TiC with good mechanical properties can be prepared by normal Sintering/HIPing process.

• Proceedings of the Materials Research Society of Korea Conference
• /
• 2001.11a
• /
• pp.133-133
• /
• 2001

• The Transactions of the Korean Institute of Electrical Engineers C
• /
• v.55 no.11
• /
• pp.505-513
• /
• 2006

The present study investigated the influence of the content of $Al_2O_3+Y_2O_3$ sintering additives on the microstructure, mechanical and electrical properties of the pressureless-sintered $SiC-ZrB_2$ electroconductive ceramic composites. Phase analysis of composites by XRD revealed mostly of ${\alpha}-SiC(4H),\;ZrB_2,\;{\beta}-SiC(15R)$ and In Situ $YAG(Al_5Y_3O_{12})$. The relative density and the flexural strength showed the highest value of 86.8[%] and 203[Mpa] for $SiC-ZrB_2$ composite with an addition of 8[wt%] $Al_2O_3+Y_2O_3$ as a sintering aid at room temperature respectively. Owing to crack deflection and crack bridging of fracture toughness mechanism, the fracture toughness showed 3.7 and $3.6[MPa{\cdot}m^{1/2}]\;for\;SiC-ZrB_2$ composites with an addition of 8 and 12[wt%] $Al_2O_3+Y_2O_3$ as a sintering aid at room temperature respectively. Abnormal grain growth takes place during phase transformation from ${\beta}-SiC\;into\;{\alpha}-SiC$ was correlated with In Situ YAG phase by reaction between $Al_2O_3\;and\;Y_2O_3$ additives during sintering. The electrical resistivity showed the lowest value of $6.5{\times}10^{-3}[({\Omega}{\cdot}cm]$ for the $SiC-ZrB_2$ composite with an addition of 8[wt%] $Al_2O_3+Y_2O_3$ as a sintering aid at room temperature. The electrical resistivity of the $SiC-ZrB_2$ composites was all positive temperature coefficient(PTCR) in the temperature ranges from $25[^{\circ}C]\;to\;700[^{\circ}C]$. The resistance temperature coefficient showed the highest value of $3.53{\times}10^{-3}/[^{\circ}C]\;for\;SiC-ZrB_2$ composite with an addition of 8[wt%] $Al_2O_3+Y_2O_3$ as a sintering aid in the temperature ranges from $25[^{\circ}C]\;to\;700[^{\circ}C]$. In this paper, it is convinced that ${\beta}-SiC$ based electroconductive ceramic composites for heaters or ignitors can be manufactured by pressureless sintering.

• Journal of the Korean Crystal Growth and Crystal Technology
• /
• v.11 no.4
• /
• pp.170-175
• /
• 2001

It was possible to grow the $Al_{2}O_{3}$ based $Y_{3}A_{5}O_{12}(YAG),ZrO_{2}$ binary and ternary eutectic fibers using micro-pulling down method with a growing rate of 0.1~15 mm/min. While $Al_{2}O_{3}/ZrO_{2}$ showed cellular-lamellar structure, $Al_{2}O_{3}$/YAG and $Al_{2}O_{3}$/YAG/$ZrO_{2}$ternary eutectic fibers showed homogeneous Chinese script lamellar structures. The microstructures of $Al_{2}O_{3}/ZrO_{2}$ binary eutectic fibers changed with solidification rate from lamellar pattern to cellular structure. The interlamellar spacing agreed with the inverse-square-root dependance on pulling rate according to $\lambda$=$kv_p\;{-1/2}$. $Al_{2}O_{3}/ZrO_{2}$ binary eutectic fibers recorded the highest tensile strength of about 1560MPa at room temperature. $Al_2O_3/YAG/ZrO_2$ternary eutectic fiber showed excellent thermal stability to $1200^{\circ}C$ without significant decrease. The maximum strength of ternary eutectic fibers recorded were 1100MPa at $25^{\circ}C$ and 970MPa at $1200^{\circ}C$, respectively.

• Korean Journal of Metals and Materials
• /
• v.49 no.12
• /
• pp.1001-1004
• /
• 2011

The formation of TiC and $Al_2O_3$ particles based on the self-combustion reaction of the $Al-TiO_2-C-CuO$ system in an Al alloy melt was investigated. With an adequate amount of CuO in the system, a spontaneous reaction occurred within the Al alloy melt at $850^{\circ}C$ and thereafter was self-maintained, producing an Al matrix composite reinforced with thermodynamically stable TiC and $Al_2O_3$ particles. TiC and $Al_2O_3$ particles contributed to a considerable increase in the strength and stiffness, demonstrating the feasibility of this method as a practical application for structural parts.

• Journal of the Korean Ceramic Society
• /
• v.39 no.1
• /
• pp.68-73
• /
• 2002

The dielectric properties and synthesis of $LaAlO_3$ ceramics from mixtures of $La_2O_3-Al_2O_3$ (LAO) and $La_2O_3-Al(OH)_3$(LAH) via grinding process were investigated. The single phase $LaA1O_3$of LAO and LAH powders were formed at $1300^{\circ}C$ and $1000^{\circ}C$, respectively. A non-reacted $La_2O_3$ existing in calcined powder was changed to La(OH)$_3$by moisture in the air, and their samples were worse than those of the samples made from a $LaA1O_3$single phase powder. The densities of LAO samples sintered at 150$0^{\circ}C$ for 4 h and LAH samples sintered at $1400^{\circ}C$ for 4 h were 97.3% and 98.3% of theory density, respectively. Grains of LAH sample showed uniformity and their sizes were 0.75 ${\mu}{\textrm}{m}$, and LAO samples showed non-uniformity and their sizes were 4-5 ${\mu}{\textrm}{m}$. Dielectric constant of LAO and LAH samples were the same value (≒22), however dielectric loss of LAH sample (0.0003) were lower than that of LAO sample(0.001)due to grain size.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.30 no.1
• /
• pp.7-12
• /
• 2017

3YSZ + (x) $Al_2O_3$ composites (x = 20, 40, 60, 80 wt%) were fabricated and the influences of particle sizes of $Al_2O_3$ on their microstructures and mechanical properties were investigated with XRD, SEM, vickers hardness and fracture toughness. $Al_2O_3$-3YSZ composites containing $Al_2O_3$ powder of a $0.3{\mu}m$ and an $1.0{\mu}m$, which are here in after named as $Al_2O_3$($0.3{\mu}m$)-3YSZ and $Al_2O_3$($1.0{\mu}m$)-3YSZ, respectively, were made by mixing raw materials, uni-axial pressing and sintering at $1,400^{\circ}C$, $1,500^{\circ}C$, and $1,600^{\circ}C$. $Al_2O_3$($0.3{\mu}m$)-3YSZ composites show the higher density and the better mechanical properties than $Al_2O_3$($1.0{\mu}m$)-3YSZ composites. The Vickers hardness of the $Al_2O_3$($0.3{\mu}m$)-3YSZ composites show a peak value of 1,997 Hv at the content of 60 wt% $Al_2O_3$, which is a slightly higher value in comparison with 1,938 Hv of the $Al_2O_3$($1.0{\mu}m$)-3YSZ composite. However, the fracture toughness of $Al_2O_3$-3YSZ composites monotonically increases with decreasing the content of $Al_2O_3$ without any peak values. $Al_2O_3$($0.3{\mu}m$)-3YSZ and $Al_2O_3$($1.0{\mu}m$)-3YSZ composites sintered at $1,600^{\circ}C$ have a maximum value of a $6.9MPa{\cdot}m^{1/2}$ and a $6.2MPa{\cdot}m^{1/2}$, respectively at the composition of containing 20 wt% $Al_2O_3$. It should be noticed that the mechanical properties and the sintering density of the $Al_2O_3$-3YSZ composites can be enhanced by using more fine $Al_2O_3$ powder due to their denser microstructure and smaller grain size.

• Journal of the Korean Crystal Growth and Crystal Technology
• /
• v.7 no.3
• /
• pp.481-486
• /
• 1997

It was succeeded in synthesizing the $Al_2O_3$-SiC refractory powders, which is main raw material of AlSiCa, from the domestic Hadong Kaolin. The oxidation reaction of the synthesized $Al_2O_3$-SiC powder was examined. The activation energy for SiC in $Al_2O_3$-SiC powder was calculated to be $\Delta$G=74.86 KJ/mol in air, however the poor sinterability of the powders is thought to be due to the vaporization of SiC in $H_2$ atmosphere. The formation of the whisker-SiC gives the possibility in use for high temperature structural material over high temperature refractory brick.

• Korean Journal of Materials Research
• /
• v.26 no.8
• /
• pp.430-437
• /
• 2016

Aluminum oxide ($Al_2O_3$) thin films were grown by atomic layer deposition (ALD) using a new Al metalorganic precursor, dimethyl aluminum sec-butoxide ($C_{12}H_{30}Al_2O_2$), and water vapor ($H_2O$) as the reactant at deposition temperatures ranging from 150 to $300^{\circ}C$. The ALD process showed typical self-limited film growth with precursor and reactant pulsing time at $250^{\circ}C$; the growth rate was 0.095 nm/cycle, with no incubation cycle. This is relatively lower and more controllable than the growth rate in the typical $ALD-Al_2O_3$ process, which uses trimethyl aluminum (TMA) and shows a growth rate of 0.11 nm/cycle. The as-deposited $ALD-Al_2O_3$ film was amorphous; X-ray diffraction and transmission electron microscopy confirmed that its amorphous state was maintained even after annealing at $1000^{\circ}C$. The refractive index of the $ALD-Al_2O_3$ films ranged from 1.45 to 1.67; these values were dependent on the deposition temperature. X-ray photoelectron spectroscopy showed that the $ALD-Al_2O_3$ films deposited at $250^{\circ}C$ were stoichiometric, with no carbon impurity. The step coverage of the $ALD-Al_2O_3$ film was perfect, at approximately 100%, at the dual trench structure, with an aspect ratio of approximately 6.3 (top opening size of 40 nm). With capacitance-voltage measurements of the $Al/ALD-Al_2O_3/p-Si$ structure, the dielectric constant of the $ALD-Al_2O_3$ films deposited at $250^{\circ}C$ was determined to be ~8.1, with a leakage current density on the order of $10^{-8}A/cm^2$ at 1 V.

• Journal of the Korean Crystal Growth and Crystal Technology
• /
• v.8 no.4
• /
• pp.634-639
• /
• 1998

$Y_2O_3$ and $Nb_2O_5$ co-doped zirconia composites containing 10~30 vol% $Al_2O_3$ with two different particle sizes were sintered for 5 h at $1550^{\circ}C$ to evaluate low-temperature phase stability of the composite using X-ray diffractometry after heat-treatments for 1000 h at $250^{\circ}C$ in air or for 5 h at $180^{\circ}C$ in 0.3 MPa $H_2O$ vapor pressure. No tetragonal to monoclinic phase transformation during degradation, so called enhanced low-temperature phase stability, was observed for all composites. It is concluded that Nb addition to the composite for the phase stability is more effective than $Al_2O_3$ addition. The optimum combination of strength (670 MPa) and fracture toughness ($7.1{\textrm} {MPam}^{1/2}$) were obtained for the composite containing 20 vol% of $Al_2O_3$ with 2.8 $\mu$m to 0.2 $\mu$m, the flexural strength increases but the fracture toughness decreases.