• 한국재료학회지
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• 제13권5호
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• pp.313-316
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• 2003

The new epitaxial base cell as a high efficiency Si solar cell was fabricated and the effect of buried contact on the cell characteristics was investigated. In our experiments, the cell with buried contact showed the open circuit voltage of 0.62 V, the short circuit current of 40 mA, the fill factor of 0.7, and the efficiency of 10% under the incident light of AM-1 100 ㎽/$\textrm{cm}^2$. The insertion of buried contact in the epitaxial base structure brought the fabricated cell to the efficiency improvement of about 33%. The cell proposed in this paper has the structural superiority in the fabrication of high efficiency solar cell due to the carrier drift transport in the optical absorption region and the formation of back surface field by $p^{－}$ $p^{+}$ epitaxial base, and the reduction of emitter series resistance by n＋ buried contact.

• E2M - 전기 전자와 첨단 소재
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• 제9권6호
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• pp.593-599
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• 1996

Laser scribing of silicon plays an important role in metallization including the grid pattern and the front surface geometry which means aspect ratio of metal contacts. To make a front metal electrode of buried contact solar cell, we used ND:YAG lasers that deliver average 3-4W at TEM$\_$00/ mode power to sample stage. The Q-switched Nd:YAG laser of 1.064 gm wavelength was used for silicon scribing with 20-40.mu.m width and 20-200.mu.m depth capabilities. After silicon slag etching, the groove width and depth for buried contact solar cell are -20.mu.m and 30-50.mu.m respectively. Using MEL 40 Nd:YAG laser system, we can scribe the silicon surface with 18-23.mu.m width and 20-200.mu.m depth controlled by krypton arc lamp power, scan speed, pulse frequency and beam focusing. We fabricated a buried contact Silicon Solar Cell which had an energy conversion efficiency of 18.8 %. In this case, the groove width and depth are 20.mu.m and 50.mu.m respectively.

• 한국표면공학회:학술대회논문집
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• 한국표면공학회 2009년도 추계학술대회 초록집
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• pp.156-156
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• 2009

High efficiency silicon solar cell technology based on planar technology has been improved by various kinds of process by using the wet etching process. In particular, the buried contact solar cell has been successfully studied. In the present work, a simplified process of the buried contact solar cell has been suggested to help one design effectively the high-efficiency solar cell.

• Transactions on Electrical and Electronic Materials
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• 제4권3호
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• pp.29-33
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• 2003

Tri-crystalline silicon wafers have three different orientations and three-grain boundaries. In this paper, tri-crystalline silicon (tri-Si) wafers have been used for the fabrication of buried contact solar cells. The optical and micro-structural properties of these cells after texturing in KOH solution have been investigated and compared with those of cast mult- crystalline silicon (multi-Si) wafers. We employed a cost effective fabrication process and achieved buried contact solar cell (BCSC) energy conversion efficiencies up to $15\%$ whereas the cast multi-Si wafer has efficiency around $14\%$.

• 한국결정성장학회지
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• 제5권4호
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• pp.400-407
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• 1995

전극함몰형 태양전지는 19% 이상의 변환효율을 갖는 고효율 실리콘 태양전지이다. 본 논문은 전극 함몰형 태양전지의 제조공정과 특성에 대하여 조사하였다. 전극함몰형 태양전지의 제조공정은 세 번의 고온과정, 한번의 진공증착과정, 한번의 레이저 응용과정 및 다른 화학공정들로 구성되어 있다.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2003년도 하계학술대회 논문집 Vol.4 No.1
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• pp.176-180
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• 2003

Tri-crystalline silicon (Tri-Si) wafers have three different orientations and three grain boundaries. In this paper, tri-Si wafers have been used for the fabrication of buried contact solar cells. The optical and micro-structural properties of these cells after texturing in KOH solution have been investigated and compared with those of cast multi-crystalline silicon (multi-Si) wafers. We employed a cost effective fabrication process and achieved buried contact solar cell (BCSC) energy conversion efficiencies up to 15% whereas the cast multi-Si wafer has efficiency around 14%.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 1995년도 춘계학술대회 논문집
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• pp.136-139
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• 1995

This paper summarizes recent development in the silicon cell area : PERL (passivated emitter, rear locally diffused cells) ,BCSC ( buried contact solar cells ) rind Hybrid buried contact / PERL cells.

• 한국재료학회지
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• 제6권6호
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• pp.568-575
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• 1996

The double sided buried contact(DSBC)silicon solar cell processing requires doping of the rear and front grooves with boron and phosphorus respectively. The successful electroless plating of these grooves with the appropriate metals haave been found to depend on the boron conditions for the rear fingers. However, an increased understanding of electroless plating has removed this restriction. Thus the DSBC cells using different boron conditions can be electrolessly plated with ease. This paper presents the recent work done on metallizing the double sided buried contact silicon solar cells with heavily doped boron grooves. The cells results indicate that, the heavier the boron grooves, the poorer the cell performance because of the probable higher metal contact recombination associated with boron grooves.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2011년도 제42회 하계학술대회
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• pp.1326-1327
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• 2011

결정질 태양전지 제작 시 실리콘 기판 표면의 전극형성은 주로 스크린 프린트를 이용하여 형성되고 있다. 이는 squeeze 와 실리콘 기판과의 직접 접촉으로 인하여 기판의 파손이 야기 될 수 있으며, 보다 미세한 전극 형성이 어려운 단점이 있다. 본 연구에서는 비접촉식 잉크젯 프린팅을 이용한 태양전지의 전극형성에 관하여 기술하였으며, 고효율 태양전지를 제작하기 위해 레이저를 이용한 grooving 형성과 전극의 패턴에 따른 반사방지막층 제거를 통하여 Buried contact cell 제작을 연구하였다. 이를 통해 전극의 선 폭을 $45{\mu}m$로 구현하였으며, 나노 크기의 입자 형태를 띤 Ag 잉크를 이용하여 인쇄하였다.

• E2M - 전기 전자와 첨단 소재
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• 제10권10호
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• pp.1034-1040
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• 1997

A solar cell conversion effiency was degraded by grain boundary effect in polycrystalline silicon. Grain boundaries acted as potential barriers as well as recombination centers for the photo-generated carriers. To reduce these effects of the grain boundaries we investigated various influencing factors such as emitter thickness thermal treatment preferential chemical etching of grain boundaries grid design contact metal and top metallization along boundaries. Pretreatment in $N_2$atmosphere and gettering by POCl$_3$and Al were performed to obtain multicrystalline silicon of the reduced defect density. Structural electrical and optical properties of slar cells were characterized before and after each fabrication process. Improved conversion efficiencies of solar cell were obtained by a combination of pretreatment above 90$0^{\circ}C$ emitter layer of 0.43${\mu}{\textrm}{m}$ Al diffusion in to grain boundaries on rear side fine grid finger top Yb metal and buried contact metallization along grain boundaries.