• Proceedings of the Korean Society of Precision Engineering Conference
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• 2010.05a
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• pp.665-666
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• 2010

• Proceedings of the Optical Society of Korea Conference
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• 2004.02a
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• pp.64-65
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• 2004

• Proceedings of the Korean Society of Precision Engineering Conference
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• 2010.11a
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• pp.255-256
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• 2010

• 대한공업교육학회지
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• v.34 no.2
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• pp.331-345
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• 2009

In this research Sagnac interferometer three different types of mandrel are suggested and this fiber optic sensor is using in monitoring of electric transformer. Vibration characteristics of those mandrels were analyzed and finally more sensitivity mandrel are suggested. Three different mandrels using in fiber optic sensor are hollow cylinder with outer bump, pure hollow cylinder, hollow cylinder with inner bump. Natural frequencies and mode shapes are investigated using finite element method. Mode shape are considered at the frequency range from 2 kHz to 20 kHz. Fundamental dimensions of the hollow cylinder type's mandrel are 30 mm in outer diameter, 50 mm in length, 1 mm in cylinder thickness, $2mm{\times}2mm$ in bump size. Based on the finite element results, when the outer acoustic frequency is near 11 kHz outer bump type and hollow cylinder can get higher sensitivity. Near 17 kHz outer bump and inner bump mandrel can get higher sensitivity. Near 20 kHz hollow cylinder and inner bump mandrel is useful. This results can be applied to design of fiber optic sensor using in monitoring the electrical transformer. Several MHz of outer acoustic frequency can be easily detected using more sensitive mandrel in pursuing expand this technique.

• Journal of the Microelectronics and Packaging Society
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• v.15 no.2
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• pp.37-45
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• 2008

In this study, reliabilities of Cu (60 um)/SnAg (20 um) double-bump flip chip assemblies were investigated for the flip chip interconnections on organic substrates with 100 um pitch. After multiple reflows at $250^{\circ}C\;and\;280^{\circ}C$, bump contact resistances were almost same regardless of number of reflows and reflow temperature. In the high temperature storage test, there was no bump contact resistance change at $125^{\circ}C$ up to 2000 hours. However, bump contact resistances slightly increased at $150^{\circ}C$ due to Kirkendall voids formation. In the electromigration test, Cu/SnAg double-bump flip chip assemblies showed no electromigration until about 600 hours due to reduced local current density. Finally, in the thermal cycling test, thermal cycling failure mainly occurred at Si chip/Cu column interface which was found out the highest stress concentration site in the finite element analysis. As a result, Al pad was displaced out under thermal cycling. This failure mode was caused by normal compressive strain acting Cu column bumps along perpendicular direction of a Si chip.

• Journal of the Korean Society of Radiology
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• v.8 no.7
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• pp.371-376
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• 2014

The process of flip-chip bump bonding, Au wire bonding and encapsulation were sucessfully developed and modularized. The CdTe sensor and ROIC were optimally jointed together at $150^{\circ}C$ and $270^{\circ}C$ respectively under24.5 N for 30s. To make SnAg bump on ROIC easy to be bonded, the higher bonding temperature was established than CdTe sensor's. In addition, the bonding pressure was lowered minimally because CdTe Sensor is easier to break than Si Sensor. CdTe multi-energy sensor module observed were no electrical failures in the joints using developed flip chip bump bonding and Au wire bonding process. As a result of measurement, shearing force was $2.45kgf/mm^2$ and, it is enough bonding force against threshold force, $2kgf/mm^2s$.

• Transactions of the Korean Society of Mechanical Engineers A
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• v.39 no.10
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• pp.1029-1037
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• 2015

Recently, the importance of rotordynamic stability has been increased because of the tendency to employ ultra-high speeds in rotating machinery. In particular, the dynamic characteristics of gas bearings for high-speed rotating machinery need to be identified at various excitation frequencies to predict the rotor's behavior. In this study, we perform dynamic loading tests for gas-foil bearings (GFBs) to determine the bump foil structure and an air-film combined bump-foil structure for varying excitation frequencies. We calculate the dynamic characteristics from the measured force and displacement data. The air film is generated by a pressurized air supply. Based on the results, the stiffness coefficients of the bump structure and the air-film combined bump structure increased, while the damping coefficients decreased at increasing excitation frequencies. Further, the stiffness and damping coefficients of the air-film combined structure show lower values than those of the bump structure. Consequently, we identify the frequency-dependent dynamic characteristics of the bump structure and the effect of gas film on the dynamic characteristics of GFBs. Furthermore, to reveal the effectiveness of the proposed method, we perform experiments and discuss two methods of extracting the dynamic characteristics from the measured data.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2018.06a
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• pp.102-102
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• 2018

Electronic industry had required the finer size and the higher performance of the device. Therefore, 3-D die stacking technology such as TSV (through silicon via) and micro-bump had been used. Moreover, by the development of the 3-D die stacking technology, 3-D structure such as chip to chip (c2c) and chip to wafer (c2w) had become practicable. These technologies led to the appearance of HBM (high bandwidth memory). HBM was type of the memory, which is composed of several stacked layers of the memory chips. Each memory chips were connected by TSV and micro-bump. Thus, HBM had lower RC delay and higher performance of data processing than the conventional memory. Moreover, due to the development of the IT industry such as, AI (artificial intelligence), IOT (internet of things), and VR (virtual reality), the lower pitch size and the higher density were required to micro-electronics. Particularly, to obtain the fine pitch, some of the method such as copper pillar, nickel diffusion barrier, and tin-silver or tin-silver-copper based bump had been utillized. TCB (thermal compression bonding) and reflow process (thermal aging) were conventional method to bond between tin-silver or tin-silver-copper caps in the temperature range of 200 to 300 degrees. However, because of tin overflow which caused by higher operating temperature than melting point of Tin ($232^{\circ}C$), there would be the danger of bump bridge failure in fine-pitch bonding. Furthermore, regulating the phase of IMC (intermetallic compound) which was located between nickel diffusion barrier and bump, had a lot of problems. For example, an excess of kirkendall void which provides site of brittle fracture occurs at IMC layer after reflow process. The essential solution to reduce the difficulty of bump bonding process is copper to copper direct bonding below $300^{\circ}C$. In this study, in order to improve the problem of bump bonding process, copper to copper direct bonding was performed below $300^{\circ}C$. The driving force of bonding was the self-annealing properties of electrodeposited Cu with high defect density. The self-annealing property originated in high defect density and non-equilibrium grain boundaries at the triple junction. The electrodeposited Cu at high current density and low bath temperature was fabricated by electroplating on copper deposited silicon wafer. The copper-copper bonding experiments was conducted using thermal pressing machine. The condition of investigation such as thermal parameter and pressure parameter were varied to acquire proper bonded specimens. The bonded interface was characterized by SEM (scanning electron microscope) and OM (optical microscope). The density of grain boundary and defects were examined by TEM (transmission electron microscopy).

• Korean Journal of Materials Research
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• v.10 no.12
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• pp.853-863
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• 2000

In this study, a new UBM materials system for solder flip chip interconnection of Cu pads were investigated using electroless copper (E-Cu) and electroless nickel (E-Ni) plating method. The interfacial reaction between several UBM structures and Sn-36Pb-2Ag solder and its effect on solder bump joint mechanical reliability were investigated to optimife the UBM materials design for solder bump on Cu pads. Fer the E-Cu UBM, continuous coarse scallop-like $Cu_{6}$ $Sn_{5}$ , intermetallic compound (IMC) was formed at the solder/E-Cu interface, and bump fracture occurred this interface under relative small load. In contrast, Fer the E-Ni/E-Cu UBM, it was observed that E-Ni effectively limited the growth of IMC at the interface, and the Polygonal $Ni_3$$Sn_4$ IMC was formed because of crystallographic mismatch between monoclinic $Ni_3$$Sn_4$ and amorphous E-Ni phase. Consequently, relatively higher bump adhesion strength was observed at E-Ni/E-Cu UBM than E-Cu UBM. As a result, it was fecund that E-Ni/E-Cu UBM material system was a better choice for solder flip chip interconnection on CU PadS.

• Journal of the Microelectronics and Packaging Society
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• v.16 no.2
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• pp.43-50
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• 2009

Although thin PCBs(Printed Circuit Boards) have recently been required for high density interconnection, high electrical performance, and low manufacturing cost, the utilization of thin PCBs is severely limited by warpage and reliability issues. Warpage of the thin PCB leads to failure in solder-joints and chip. The $B^2it$(Buried Bump Interconnection Technology) for PCB has been developed to achieve a competitive manufacturing price. In this study, chip temperature, package warpage, chip stress and solder-joints stress characteristics of the PCB prepared with $B^2it$ process have been calculated using thermo-mechanical coupled analysis by the FEM(Finite Element Method). FEM computation was carried out with the variations in bump shapes and kinds of materials under 1.5W power of chip and constant convection heat transfer. The results show that chip temperature distribution reached more quickly steady-state status with PCB prepared with $B^2it$ process than PCB prepared with conventional via interconnection structure. Although $B^2it$ structures are effective on low package warpage and chip stress, with high strength bump materials arc disadvantage for low stress of solder-joints. Therefore, it is recommended that optimized bump shapes and materials in PCB design should be considered in terms of reliability characteristics in the packaging level.