• Current Photovoltaic Research
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• v.2 no.1
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• pp.28-35
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• 2014

High-efficiency in $Cu(In,Ga)Se_2$ (CIGS) solar cells were usually achieved on soda-lime glass substrates due to Na incorporation that reduces deep-level defects. However, this supply of sodium from sodalime glass to CIGS through Mo back electrode could be limited at low deposition temperature. Na content could be more precisely controlled by supplying Na from known amount of an outside source. For the purpose, an $Na_2S$ layer was deposited on Mo electrode prior to CIGS film deposition and supplied to CIGS during CIGS film. With the $Na_2S$ underlayer a more uniform component distribution was possible at $350^{\circ}C$ and efficiency was improved compared to the cell without $Na_2S$ layer. With more precise control of bulk and surface component profile, CIGS film can be deposited at low temperature and could be useful for flexible CIGS solar cells.

• Korean Chemical Engineering Research
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• v.44 no.1
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• pp.23-34
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• 2006

The production of various commodity chemicals including fine chemicals, pharmaceuticals, bulk chemicals, plastics, and fuels is based on fossil resources such as petroleum. However, the limited reserves and ever-increasing demand of petroleum lead to the rapid elevation of its price. In addition, the traditional chemical processes using petroleum as a raw material have been imposing a serious environmental burden to our planet including global warming. These problems can be alleviated substantially by employing biological raw materials and bioconversion processes. Industrial biotechnology is expected to significantly complement or replace the current petroleum-based industry and to play an important role in bringing about so-called 'bio-based society'.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.02a
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• pp.199-199
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• 2011

Recently, Thin film transistors (TFTs) with amorphous oxide semiconductors (AOSs) can offer an important aspect for next generation displays with high mobility. Several oxide semiconductor such as ZnO, $SnO_2$ and InGaZnO have been extensively researched. Especially, as a well-known binary metal oxide, tin oxide ($SnO_2$), usually acts as n-type semiconductor with a wide band gap of 3.6eV. Over the past several decades intensive research activities have been conducted on $SnO_2$ in the bulk, thin film and nanostructure forms due to its interesting electrical properties making it a promising material for applications in solar cells, flat panel displays, and light emitting devices. But, its application to the active channel of TFTs have been limited due to the difficulties in controlling the electron density and n-type of operation with depletion mode. In this study, we fabricated staggered bottom-gate structure $SnO_2$-TFTs and patterned channel layer used a shadow mask. Then we compare to the performance intrinsic $SnO_2$-TFTs and doping hafnium $SnO_2$-TFTs. As a result, we suggest that can be control the defect formation of $SnO_2$-TFTs by doping hafnium. The hafnium element into the $SnO_2$ thin-films maybe acts to control the carrier concentration by suppressing carrier generation via oxygen vacancy formation. Furthermore, it can be also control the mobility. And bias stability of $SnO_2$-TFTs is improvement using doping hafnium. Enhancement of device stability was attributed to the reduced defect in channel layer or interface. In order to verify this effect, we employed to measure activation energy that can be explained by the thermal activation process of the subthreshold drain current.

• Korean Journal of Materials Research
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• v.27 no.1
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• pp.32-38
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• 2017

Insulating $TaN_x$ films were grown by plasma enhanced atomic layer deposition using butylimido tris dimethylamido tantalum and $N_2+H_2$ mixed gas as metalorganic source and reactance gas, respectively. Crossbar devices having a $Pt/TaN_x/Pt$ stack were fabricated and their electrical properties were examined. The crossbar devices exhibited temperature-dependent nonlinear I (current) - V (voltage) characteristics in the temperature range of 90-300 K. Various electrical conduction mechanisms were adopted to understand the governing electrical conduction mechanism in the device. Among them, the PooleFrenkel emission model, which uses a bulk-limited conduction mechanism, may successfully fit with the I - V characteristics of the devices with 5- and 18-nm-thick $TaN_x$ films. Values of ~0.4 eV of trap energy and ~20 of dielectric constant were extracted from the fitting. These results can be well explained by the amorphous micro-structure and point defects, such as oxygen substitution ($O_N$) and interstitial nitrogen ($N_i$) in the $TaN_x$ films, which were revealed by transmission electron microscopy and UV-Visible spectroscopy. The nonlinear conduction characteristics of $TaN_x$ film can make this film useful as a selector device for a crossbar array of a resistive switching random access memory or a synaptic device.

• Journal of Korea Port Economic Association
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• v.39 no.3
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• pp.179-189
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• 2023

Korea's port development adjusts the completion time and size of port facilities according to the future port throughput. The current port development system, which is referred to as "throughput-linked port development (Trigger Rule)", has received positive evaluation for efficiently executing the limited port development budget. Recently concerns have been growing over deteriorating service levels in port facilities in Korea due to accelerated aging of terminal facilities. However, the current port development system does not possess any standard for assessing the level of service and utilizing development indicators. The purpose of this paper is to calculate the Port Service Index (PSI) by selecting indicators to measure the Level of Service (LOS) of ports and deriving weights between the indicators, so that the current "throughput-linked port development (Trigger Rule)" can be linked with the level of service. Based on the result of analysis on a variety of preceding studies, the ship waiting rate, berth productivity, ship turnaround time and ship productivity were selected as four indicators to constitute the Port Service Index. The AHP and entropy methodologies were used to derive weights for each of four indicators which were later combined to calculate the comprehensive weight. The calculation formula of the Port Service Index (PSI) was derived by using the aggregated weights of each indicator, based on which the LOS of domestic container and bulk terminals were evaluated and this measurement result was divided into 6 classes to define each LOS. This paper contributes to draw the improvement measures for port development system that are able to connect the quantitative indicator of throughput, as well as a qualitative indicator of the level of "service".