• Journal of the Korean Applied Science and Technology
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• v.22 no.4
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• pp.306-314
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• 2005

In this study, spherical $pre-BaTiO_3$ particles are prepared by gelation and aging process in autoclave without catalysts. The (Ba-Ti) gel used as a starting material was prepared by aging mixtures of titanyl acylate with barium acetate aqueous solution([glacial acetic acid (AcOH)]/[titanium isopropoxide (TIP)] 4, [barium acetate]/[TIP] 1) at $45^{\circ}C$ for 48hrs. XRD and SEM results for the (Ba-Ti) gel sample at aging process showed that the gel was formed via aggregation of the fine particles. It seems to be the primary particles of bulk (Ba-Ti) gel amorphous, but the spatial arrangement of barium and titanium in the (Ba-Ti) gel is similar to that in crystalline $BaTiO_3$ particles. From XRD and FT-IR. spectroscopy analysis it was found that the crystal structure of the prepared particles continuously transformed from amorphous to tetragonal as the calcination temperature increased, and crystallized spherical cubic and tetragonal $BaTiO_3$ powder obtained at the very low calcination temperature between $500^{\circ}C$ and $900^{\circ}C$ after 1hrs of heat treatment respectively. According to BET analysis result, final particle have pore structure of ink bottle shape which is produced by aggregation of fine spherical particles with surface area of $280m^2/g$ and average pore size of 130nm.

• Journal of Sensor Science and Technology
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• v.24 no.1
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• pp.15-21
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• 2015

Transparent and conductive multilayer thin films consisting of three alternating layers FZTO/Ag/$WO_3$ have been fabricated by radio-frequency (RF) sputtering for the applications as transparent conducting oxides and the structural and optical properties of the resulting films were carefully studied. The single layer fluorine doped zinc tin oxide (FZTO) and tungsten oxide ($WO_3$) films grown at room temperature are found to have an amorphous structure. Multilayer structured electrode with a few nm Ag layer embedded in FZTO/Ag/$WO_3$ (FAW) was fabricated and showed the optical transmittance of 87.60 % in the visible range (${\lambda}=380{\sim}770nm$), quite low electrical resistivity of ${\sim}10^{-5}{\Omega}cm$ and the corresponding figure of merit ($T^{10}/R_s$) is equivalent to $3.0{\times}10^{-2}{\Omega}^{-1}$. The resultant power conversion efficiency of 2.50% of the multilayer based OPV is lower than that of the reference commercial ITO. Asymmetric D/M/D multilayer is a promising transparent conducting electrode material due to its low resistivity, high transmittance, low temperature deposition and low cost components.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.08a
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• pp.280-280
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• 2010

Semiconductor quantum dots are of great interest for both fundamental research and industrial applications due to their unique size dependant properties. The most promising application of colloidal semiconductor nanocrystals (quantum dots or QDs) is probably as emitters in biomedical labeling, LEDs, lasers etc. As compared to II-VI quantum dots, III-V have attracted greater interest owing to their less ionic lattice, larger exciton diameters and reduced toxicity. Among the III-V semiconductor quantum dots, Indium Phosphide (InP) is a popular material due to its bulk band gap of 1.35 (eV) which is responsible for the photoluminescence emission wavelength ranging from blue to near infrared with change in size of QDs. Nevertheless, in recent years, the exact type of collective properties that arise when semiconductor quantum dots (QDs) are assembled into two- or three-dimensional arrays has drawn much interest. The term "uantum dot solids" is used to indicate three-dimensional assemblies of semiconductor QDs. The optoelectronic properties of the quantum dot solids are known to depend on the electronic structure of the individual quantum dot building blocks and on their electronic interactions. This paper reports an efficient and rapid method to produce highly luminescent and monodisperse quantum dots solution and solid through fabrication of InP thin films. By varying the molar concentration of Indium to Ligand, QDs of different size were prepared. The absorption and emission behaviors were also studied. Similar measurements were also performed on InP quantum dot solid by fabricating InP thin films. The optical properties of the thin films are measured at different curing temperatures which show a blue shift with increase in temperature. The dielectric properties of the thin films were also investigated by Capacitance-voltage(C-V) measurements in a metal-insulator-semiconductor (MIS) device.

• Applied Chemistry for Engineering
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• v.10 no.6
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• pp.832-837
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• 1999

Stability of a cathode material was determined by Tafel plot in 1 M LiOH solution. The stabilized $LiM_xMn_{2-x}O_4$ (x=0.05~0.1) electrode resulted in overpotential of 0.13~0.15 mV at 100 mA. This overpotential was 0.05 mV lower than that of the spinel structured $LiMn_2O_4$ electrode. Conductivity test at various potentials showed that the conductivity of $LiM_xMn_{2-x}O_4$ was higher than that of the spinel structured $LiMn_2O_4$ and the bulk resistance of $LiM_xMn_{2-x}O_4$ due to the dissolution of $Mn^{2+}$ was lowered.

• Journal of Fashion Business
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• v.19 no.4
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• pp.183-199
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• 2015

This study aimed to systematize the apparel vendor work processes and provide useful information to future employees of clothing export units by analyzing the processes of vendors' manufacturing tasks. A survey of 20 apparel vendors servicing mainly U.S. buyers was conducted on employees of overseas business departments working for more than five years. buyers. Based on the results, vendors mainly manufactured cut-and-sew knit products. Regarding the production method, OEM was used more frequently than ODM. Fourteen (70%) companies used the ODM method. This suggests that vendors are expanding their production method from OEM to ODM. In order to summarize the work of each business based on the clothing production process research results, buyers were in charge of planning products and the vendors were in charge of sampling. Production of materials and the approval of material tests were out sourced. Overseas factories of vendors were in charge of bulk (mass) production and garment finishing, as well as packaging and shipping the completed products. Even though the vendors' head offices do not directly produce clothes, they play a pivotal role in ensuring planning and management progress in clothing production. As buyers prefer direct contracts for cost reduction, the vendor additionally performs the role of an agent. Also, with the increase in ODM production ratio, the work area of the vendor is expanding. If Korean clothing exporters improve their global competitiveness by investing in the R&D of materials and design to enhance the ODM method, the development of Korea's clothing and export industry will benefit significantly.

• Journal of Korea Technical Association of The Pulp and Paper Industry
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• v.47 no.6
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• pp.123-129
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• 2015

There are two kinds of cartons for beverage packaging, one is aseptic brick (AB) type and the other is gable top (GT). In this study, AB and GT were used as a raw material of recycled paper to investigate the recyclability at their varied blending ratios. Fiber consistency at pulping decreased as the blending ratio of AB increased. As a result, a lot of fines were generated from AB and flakes from GT increased because shear force in pulper decreased. Bulk of handsheets was more than $2.0cm^3/g$, and ISO brightness decreased as the blending ratio of AB increased. The best condition to recycle beverage cartons is to discriminate each cartons separately because of differences in the composition. However, there are problems such as the limit of the collection system and social costs. Therefore, it is assumed that the blending ratios of AB should be adjusted at less than 20% for effective recycling of beverage cartons.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.02a
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• pp.423-423
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• 2011

Zinc oxide is metal oxide semiconductor with the 3.37 eV bandgap energy. Zinc oxide is very attractive materials for many application fields. Zinc Oxide has many advantages such as high conductivity and good transmittance in visible region. Also it is cheaper than other semiconductor materials such as indium tin oxide (ITO). Therefore, ZnO is alternative material for ITO. ZnO is attracting attention for its application to transparent conductive oxide (TCO) films, surface acoustic wave (SAW), films bulk acoustic resonator (FBAR), piezoelectric materials, gas-sensing, solar cells and photocatalyst. In this study, we synthesized ZnO nanoparticles and defined their physical and chemical properties. Also we studied about the application of ZnO nanoparticles as a photocatalyst and try to find a enhancement photocatalytic activity of ZnO nanorticles.. We synthesized ZnO nanoparticles using spray-pyrolysis method and defined the physical and optical properties of ZnO nanoparticles in experiment I. When the ZnO are exposed to UV light, reduction and oxidation (REDOX) reaction will occur on the ZnO surface and generate O2- and OH radicals. These powerful oxidizing agents are proven to be effective in decomposition of the harmful organic materials and convert them into CO2 and H2O. Therefore, we investigated that the photocatalytic activity was increased through the surface modification of synthesized ZnO nanoparticles. In experiment II, we studied on the stability of ZnO nanoparticles in water. It is well known that ZnO is unstable in water in comparison with TiO2. Zn(OH)2 was formed at the ZnO surface and ZnO become inactive as a photocatalyst when ZnO is present in the solution. Therefore, we prepared synthesized ZnO nanoparticles that were immersed in the water and dried in the oven. After that, we measured photocatalytic activities of prepared samples and find the cause of their photocatalytic activity changes.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.02a
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• pp.199-199
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• 2011

Recently, Thin film transistors (TFTs) with amorphous oxide semiconductors (AOSs) can offer an important aspect for next generation displays with high mobility. Several oxide semiconductor such as ZnO, $SnO_2$ and InGaZnO have been extensively researched. Especially, as a well-known binary metal oxide, tin oxide ($SnO_2$), usually acts as n-type semiconductor with a wide band gap of 3.6eV. Over the past several decades intensive research activities have been conducted on $SnO_2$ in the bulk, thin film and nanostructure forms due to its interesting electrical properties making it a promising material for applications in solar cells, flat panel displays, and light emitting devices. But, its application to the active channel of TFTs have been limited due to the difficulties in controlling the electron density and n-type of operation with depletion mode. In this study, we fabricated staggered bottom-gate structure $SnO_2$-TFTs and patterned channel layer used a shadow mask. Then we compare to the performance intrinsic $SnO_2$-TFTs and doping hafnium $SnO_2$-TFTs. As a result, we suggest that can be control the defect formation of $SnO_2$-TFTs by doping hafnium. The hafnium element into the $SnO_2$ thin-films maybe acts to control the carrier concentration by suppressing carrier generation via oxygen vacancy formation. Furthermore, it can be also control the mobility. And bias stability of $SnO_2$-TFTs is improvement using doping hafnium. Enhancement of device stability was attributed to the reduced defect in channel layer or interface. In order to verify this effect, we employed to measure activation energy that can be explained by the thermal activation process of the subthreshold drain current.

• Transactions on Electrical and Electronic Materials
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• v.5 no.5
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• pp.204-207
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• 2004

In this work, we present the electrochemical properties of Al bipolar plate, which can be re-searched for the application of PEMFC system. Bulk resistance of the plate was measured with a four-point probe method. The electrical conductivity of noble metal coated Al plate was 4.40 x 10$^4$ S/cm. On the other hand, the electrical interfacial resistance of the noble metal coated Al plate valued at 0.15 mΩ-$\textrm{cm}^2$ and that of graphite was 0.26 mΩ-$\textrm{cm}^2$ under the holding pressure of 140 N/$\textrm{cm}^2$ at the applied current of 5 A. And the performance of Al bipolar plate for PEMFC was evaluated at various conditions. The single cell performance was more than 0.43 W/$\textrm{cm}^2$ (0.47 Wig) for noble metal coated Al bipolar plate at 5$0^{\circ}C$ under atmospheric pressure in external humidified hydrogen and oxygen condition. As the present results, we could show the results that the noble metal coated Al bipolar plates were favorable in the aspect of electrical properties compared with those of the commercialized resin-impregnated graphite plates.

• Carbon letters
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• v.11 no.4
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• pp.293-297
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• 2010

To investigate new potential application of a clay material for C/C composites, illite added C/C composites were prepared with various illite contents. The improvement of filler effect by illite size reduction was also investigated using wet ballmilling by evaluating illite/phenolic resin infiltration using bulk density and porosity measurements, chemical structural changes of the composites using XRD, and thermal oxidation stability in air of the composites using TGA. The size reduction of illite resulted in narrower particle size distribution and improved illite infiltration into carbon preform. And the resultant C/C composites prepared with illite had even more improved thermal oxidation stability in air, showing more increased IDTs up to $100^{\circ}C$, compared to those of the C/C composites with pristine illite, due to the SiC formation through carbothermal reduction between illite and carbon materials. The illite induced delay in oxidation of the illite-C/C composites was also observed and the delayed oxidation behavior was attributed to the layered structure of illite, which improved illite/phenol resin infiltration. Therefore, the potential use of illite as filler to improve oxidation stability of C/C composite can be promising. And the size reduction of illite can improve its effect on the desired properties of illite-C/C composites even more.