• 한국전기전자재료학회논문지
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• 제15권12호
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• pp.1039-1044
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• 2002

Film Bulk Acoustic Resonator (FBAR) using thin piezoelectric films can be made as monolithic integrated devices with compatibility to semiconductor process, leading to small size, low cost and high Q RF circuit elements with wide applications in communications area. This paper presents an MMIC compatible suspended FBAR using SOI micromachining. It is possible to make a single crystal silicon membrane using a SOI wafer In fabricating active devices, SOI wafer offers advantage which removes the substrate loss. FBAR was made on the 12㎛ silicon membrane. Electrode and Piezoelectric materials were deposited by RF magnetron sputter. The maximum resonance frequency of FBAR was shown at 2.5GHz range. The reflection loss, K$^2$$\_$eff/, Q$\_$serise/ and Q$\_$parallel/ in that frequency were 1.5dB, 2.29%, 220 and 160, respectively.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2002년도 추계학술대회 논문집 Vol.15
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• pp.358-361
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• 2002

체적파 박막형 공진기 (FBAR: Film Bulk Acoustic wave Resonator)소자를 제조하여, 박막의 c축 우선 배향성을 조절하는 것이 FBAR 소자 특성을 확인하였다. 본 연구에서는 MEMS 공정에 의해 Membrane 구조의 FBAR(Film Bulk Acoustic wave Resonator) 소자를 구현하고자 하였다. 이를 위해 Si 기판을 Back-etching 하여 membrane 구조를 제작하였고 압전층으로 ZnO을 Sputtering 공정에 의해 증착 후, 공정 조건에 따른 우선 배향성을 관찰하였다.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 1998년도 춘계학술대회 논문집
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• pp.371-373
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• 1998

The SmBa$_2$Cu$_3$O$\sub$x/ single crystals were used as seeds to induced YBCO growth in MTG process. As the result, the large bulk oriented YBCO superconductors were prepared with dimension of plane 21mm and 32mm in diameter and 10mm in height. The typical Jc value of the sample is 6.5${\times}$10$^4$A/$\textrm{cm}^2$ and its flux float force is 4.6N/$\textrm{cm}^2$. The oxygen absorption in large bulk textured YBCO samples in pure oxygen was studied at several constant temperatures. It can be divided into two steps: a chemical reaction step and a diffusion step.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 1988년도 추계학술대회 논문집
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• pp.33-35
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• 1988

From the study of mechanism of electrical conduction of film which is made from Polyethylene Terephthalate at very high temperature which is larger than low electric field and glass transition point, we find that there is a extraordinary non ohmic region (I∝V$^n$, 0

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 1998년도 춘계학술대회 논문집
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• pp.491-493
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• 1998

The SmBa$_2$Cu$_3$O$\sub$x/ single crystals were used as seeds to induced YBCO growth in MTG process. As the result, the large bulk oriented YBCO superconductors were prepared with dimension of plane 21mm and 32mm in diameter and 10mm in height. The typical Jc value of the sample is 6.5${\times}$10$^4$A/$\textrm{cm}^2$ and its flux float force is 4.6N/$\textrm{cm}^2$. The oxygen absorption in large bulk textured YBCO samples in pure oxygen was studied at several constant temperatures. It can be divided into two steps: a chemical reaction step and a diffusion step.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2000년도 하계학술대회 논문집
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• pp.636-639
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• 2000

Effects of sintering temperature and time on relative permittivity $\varepsilon$$\_$r/, unloaded quality factor Q$.$f and temperature coefficient of resonant frequency $\tau$$\_$f/ of dielectric resonator materials produced from commercial ZST powder were investigated in some detail. Q$.$f values, as determined from cavity perturbation method at 1.6 GHz, gradually increased with sintering temperature reaching the maximum at 1420$^{\circ}C$. However, bulk density and relative permittivity values, which increased with temperature, started to decrease above 1380$^{\circ}C$. In addition, Q$.$f values slightly increased with sintering time at the sintering temperature of 1300$^{\circ}C$∼1380$^{\circ}C$, while bulk density and relative permittivity values were approximately constant. It was also found that $\tau$$\_$f/ values were not affected by sintering temperature and time within the experimental conditions used.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 1994년도 춘계학술대회 논문집
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• pp.17-20
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• 1994

PTCRl(positive temperature coefficient of resistivity) thermistors in the thin file BaTiO$_3$ system were deposited by radio frequency (13.56 MHz) and dc radio frequency (13.56MHz) and dc magnerton sputter equipment. R-T(resistivity -temperature) properties was investigated as a function of substrate and the temperature variation. The specimens make a comperison between the thin films and the bulk in the resistivity variation. Substrate temperature. deposition time. and forward power are deposited at the 400$^{\circ}C$, 10 hours, and 210 watt. respectively. The aim of this work is to obtain lower than bulk specimen resistivity in thin films BaTiO$_3$ system thermistor by RF/DC magnetron sputter equipment.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2000년도 추계학술대회 논문집
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• pp.149-152
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• 2000

AC impedance measurements on poly-p-phenylenevinylene (PPV) LEDs in the frequency range between 10 Hz and 10$\^$6/ Hz were carried out. The complex-plane impedance spectra indicate that PPV devices can be represented by equivalent circuits that corresponds to the bulk and interfacial regions at high and low frequencies, respectively. As a result of complex impedance analysis through the separation of bulk and interfacial region impedances, increase of forward bias in Al/PPV/ITO devices gave rise to relative decrease of the interfacial region impedance. Above the electric field of 10$\^$6/ V/cm the PPV device showed a space charge limited current (SCLC) conduction. The dependence of the transport mechanism and dielectric properties on the applied bias voltage is discussed.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2000년도 하계학술대회 논문집
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• pp.377-382
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• 2000

Film bulk acoustic resonator (FBAR) using AIN reactively sputtered at room temperature was fabricated. The FBAR is composed of a piezoelectric aluminium nitride thin film, top electrode of Al and bottom electrode of Au connected by a short (200${\mu}{\textrm}{m}$) transmission line on both sides and reflector layers of SiO$_2$- W Pair. The active areas of Al and Au were patterned using 150${\mu}{\textrm}{m}$ diameter shadow mask. The series resonance frequency (fs) and the parallel resonance frequency (fp) were measured at 1.976 GHz and 2.005 GHz, respectively. The minimum insertion loss and return loss were 6.1 dB and 37.19 dB, and the quality factor (Q) was 4261.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2003년도 추계학술대회 논문집 Vol.16
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• pp.275-278
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• 2003

The aim of the study is to scrutinize the relationship between the area of resonance and center frequency with varying thickness by analyzing the characteristics of 2-port resonator. This was done through ideal design using Leach model equivalent model modified Mason model equivalent circuit for the application of bandpass filter high-frequency band with resonator Moreover, through the design of ladder-type BPF, we were able to observe changes in bandwidth, resonation, out-of-band rejection depending on the number and area of resonator.