• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.322.2-322.2
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• 2014

Lighting emitting diodes of n-ZnO/MQW/p-GaN structure are fabricated and investigated. To realize this LED structure, n-ZnO/MQW/p-GaN are grown by MOCVD. At several bias voltages, blue-green light is emitted from the ZnO mesa edge. However, the emission is restricted near the mesa edge. It is seen that the hole current does not spread well. It is because conductivity of p-GaN is extremely small. The break down voltage of the device is small compared to conventional InGaN/GaN LEDs. It is seen that ZnO columnar grain boundaries act as leakage current paths and non-radiative recombination center.

• Proceedings of the KIEE Conference
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• summer
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• pp.1199-1201
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• 2004

When The temperature of the joining of SCR rises major changes of characteristics are increase of leakage current, decrease of break-down voltage, and increase of turn off time. Because these changes promote the inferiority of SCR it(SCR) will get out of control and its life time will be shortened and finally it will be destroyed. In this paper, we will measure the changes of the characteristics in accordance with a rise in temperature. On the basis of the result we will find out the appropriate time to change SCR and we will use the result for the maintenance of SCR and increase of reliability of SCR.

• Proceedings of the KIEE Conference
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• 2003.07b
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• pp.1285-1287
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• 2003

The aging of the insulation reduces the electrical and mechanical strength of the insulation. At same point, a voltage surge or mechanical shock from a traction motor start will fracture or break down the insulation. To achieve the expected life usually requires extensive laboratory evaluation of the insulation systems and the use of accelerated aging tests. There are several nondestructive test available for checking. the condition of motor insulation, the probable extent of aging, and the rate of which aging is taking place. So the insulation characteristics of stator coil were each analyzed by measurement of dielectric loss($tan{\delta}$), capacitance and partial discharge. The method of diagnosis is able to analyze the aging condition and predict the life of the traction motor.

• Proceedings of the KIEE Conference
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• 2004.11a
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• pp.230-232
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• 2004

In this paper, we investigated dielectric and insulation characteristics of epoxy resin which includes elastomers to improve mechanical property, as varied additive elastomer contents with 5[phr], 10[phr], 15[phr], and 20[phr]. We measured permittivity and tan $\delta$ at 1kHz of signal frequency and room temperature. And we also measured BVD(break-down voltage) and volume resistivities. According to the experimental results, it is appeared that when the additive elastomer contents are increasing, permittivity, volume resistivity, BVD and volume resistance are decreasing because elastomer remains inferior to epoxy resin on electrical properties.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.30 no.6
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• pp.345-348
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• 2017

In this work, static characteristics of 4H-SiC SJ-ACCUFETs were obtained by adjusting the p-pillar region. The structure of this SJ-ACCUFET was designed by using a two-dimensional simulator. The static characteristics of SJ-ACCUFET, such as the breakdown voltages, on-resistance, and figure of merits, were obtained by varying the p-pillar doping concentration from $1{\times}10^{15}cm^{-3}$ to $5{\times}10^{16}cm^{-3}$ and the thickness from $0{\mu}m$ to $9{\mu}m$. The doping concentration and the thickness of p-pillar region are closely related to the break down voltage and on-resistance and threshold voltages. Hence a silicon carbide SJ-ACCUFET structure with highly intensified breakdown voltages and low on-resistances with good figure of merits can be achieved by optimizing the p-pillar thickness and doping concentration.

• Journal of IKEEE
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• v.20 no.2
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• pp.163-166
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• 2016

It is important to operate the driving circuit under the optimal condition through precisely sensing the power consumption causing the temperature made mainly by the MOSFET (metal-oxide semiconductor field-effect transistor) when a BLDC (Brushless Direct Current) motor operates. In this letter, a Super-junction (SJ) power TMOSFET (trench metal-oxide semiconductor field-effect transistor) with an ultra-low specific on-resistance of $0.96m{\Omega}{\cdot}cm^2$ under the same break down voltage of 100 V is designed by using of the SILVACO TCAD 2D device simulator, Atlas, while the specific on-resistance of the traditional power MOSFET has tens of $m{\Omega}{\cdot}cm^2$, which makes the higher power consumption. The SPICE simulation for measuring the power distribution of 25 cells for a chip is carried out, in which a unit cell is a SJ Power TMOSFET with resistor arrays. In addition, the power consumption for each unit cell of SJ Power TMOSFET, considering the number, pattern and position of bonding, is computed and the power distribution for an ANSYS model is obtained, and the SJ Power TMOSFET is designed to make the power of the chip distributed uniformly to guarantee it's reliability.

• Proceedings of the KIEE Conference
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• 1996.07a
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• pp.521-524
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• 1996

A new zero voltage and nero current switching(ZVZCS) full bridge(FB) PWM converter b proposed to improve the performance of the previously presented ZVZCS-FB-PWM converters [7,8]. By adding a secondary active clamp and controlling the clamp switch moderately, ZVS(for leading-leg switches) are ZCS(for lagging-leg switches) are achieved without nay lossy components, the reverie avalanche break down of leading-leg IGBTs[7] or the saturable reactor in the primary[8]. Many advantages including simple circuit topology, high efficiency, and low cost mate the new converter attractive for high voltage and high power(> 10 kW) applications. The principle of operation is explained and analyzed. The features and design considerations of the new converter are also illustrated and verified on an 1.8 kW, 100 kHz IGBT based experimental circuit.

• Korean Journal of Materials Research
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• v.13 no.11
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• pp.711-716
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• 2003

Gate length, height, and silicide thickness have all been shrinking linearly as device density has progressively increased over the years. We investigated the effect of the cobalt diffusion during the silicide formation process on the 60$\AA$-thick gate oxide lying underneath the Ti/Co and Co/Ti bilayers. We prepared four different cobalt silicides, which have similar sheet resistance, made from the film structure of Co/Ti(interlayer), and Ti(capping layer)/Co, and peformed the current-voltage, time-to-break down, and capacitance-voltage measurements. Our result revealed that the cobalt silicide process without the Ti capping layer allowed cobalt atoms to diffuse into the upper interface of gate oxides. We propose that 100$\AA$-thick titanium interlayer may lessen the diffusion of cobalt to gate oxides in 1500-$\AA$ height polysilicon gates.

• Journal of the Korean Institute of Illuminating and Electrical Installation Engineers
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• v.25 no.9
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• pp.75-79
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• 2011

The MOV(Metal Oxide Varistor), a voltage limiting element, has been installed in the SPD(Surge Protective Device) or inside the internal circuit of an electronic appliance for protection of the electric power system and electronic device against electrical surge. Such an MOV is exposed, however, to the risk of the thermal runaway resulting from excessive voltage and deterioration. In this paper, a reciprocal action has been tested and analyzed using a phosphorus bronze switching module and the low-temperature solder. And a short current break characteristic test linked with the circuit breaker has been performed to limit the inrush current when the MOV breaks down. It has been proven that the phosphorus bronze switching module installed inside the internal circuit can improve the safety of the power line system and the electronic device.

• Proceedings of the KSME Conference
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• 2007.05a
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• pp.142-147
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• 2007

A series of styrene-butadiene-styrene/aluminium (SBR/Al) composites have been compounded with different weight ratios of Al. The prepared SBR-Al systems have been characterized for different mechanical properties such as tensile strength, tensile modulus and surface hardness have improved with the increase in content of Al in SBR matrix. This may is because of the increase in polymer-filler interaction. The electrical properties such as volume conductivity, surface resistivity, dielectric constant, dissipation factor (tan delta), and break down voltage of SBR/Al composites have been measured with reference to volume fraction $(V_{f}),$ frequency and temperature. The resistance of the SBR-Al composites is found to be ohmic. The voltage-current (V-I) characteristics for SBR-Al also exhibit a linear relationship indicating the ohmic behavior.